公开(公告)号：US20200083380A1

公开(公告)日：2020-03-12

申请号：US16154644

申请日：2018-10-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US10340391B2

公开(公告)日：2019-07-02

申请号：US15637773

申请日：2017-06-29

Applicant: United Microelectronics Corp.

Inventor： Yen-Chen Chen ,  Xiao Wu ,  Hai Tao Liu ,  Ming Hua Du ,  Shouguo Zhang ,  Yao-Hung Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L29/10 ,  H01L29/12 ,  H01L21/16 ,  H01L21/44 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

公开(公告)号：US12027629B2

公开(公告)日：2024-07-02

申请号：US18103505

申请日：2023-01-31

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/66742

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US20220109104A1

公开(公告)日：2022-04-07

申请号：US17551214

申请日：2021-12-15

Applicant: United Microelectronics Corp.

Inventor： Hai Tao Liu ,  Li Li Ding ,  Yao-Hung Liu ,  Guoan Du ,  Qi Lu Li ,  Chunlei Wan ,  Yi Yu Lin ,  Yuchao Chen ,  Huakai Li ,  Hung-Yueh Chen

IPC: H01L45/00 ,  H01L27/24

Abstract: A method for fabricating memory device includes: providing a substrate having a bottom electrode layer therein, forming a buffer layer and a mask layer on the buffer layer over the substrate, in contact with the bottom electrode layer, performing an advanced oxidation process on a sidewall of the buffer layer to form a resistive layer, which surrounds the whole sidewall of the buffer layer and extends upward vertically from the substrate, and forming, over the substrate, a noble metal layer and a top electrode layer on the noble metal layer, fully covering the resistive layer and the mask layer.

公开(公告)号：US11239419B2

公开(公告)日：2022-02-01

申请号：US16505190

申请日：2019-07-08

Applicant: United Microelectronics Corp.

Inventor： Hai Tao Liu ,  Li Li Ding ,  Yao-Hung Liu ,  Guoan Du ,  Qi Lu Li ,  Chunlei Wan ,  Yi Yu Lin ,  Yuchao Chen ,  Huakai Li ,  Hung-Yueh Chen

IPC: H01L45/00 ,  H01L27/24

Abstract: The present invention relates to a structure of a memory device. The structure of a memory device includes a substrate, including a bottom electrode layer formed therein. A buffer layer is disposed on the substrate, in contact with the bottom electrode layer. A resistive layer surrounds a whole sidewall of the buffer layer, and extends upward vertically from the substrate. A mask layer is disposed on the buffer layer and the resistive layer. A noble metal layer is over the substrate, and fully covers the resistive layer and the mask layer. A top electrode layer is disposed on the noble metal layer.

公开(公告)号：US20210336059A1

公开(公告)日：2021-10-28

申请号：US17367637

申请日：2021-07-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chien-Ming Lai ,  Yen-Chen Chen ,  Jen-Po Huang ,  Sheng-Yao Huang ,  Hui-Ling Chen ,  Qinggang Xing ,  Ding-Lung Chen ,  Li Li Ding ,  Yao-Hung Liu

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/51 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10

Abstract: An oxide semiconductor field effect transistor (OSFET) includes a first insulating layer, a source, a drain, a U-shaped channel layer and a metal gate. The first insulating layer is disposed on a substrate. The source and the drain are disposed in the first insulating layer. The U-shaped channel layer is sandwiched by the source and the drain. The metal gate is disposed on the U-shaped channel layer, wherein the U-shaped channel layer includes at least an oxide semiconductor layer. The present invention also provides a method for forming said oxide semiconductor field effect transistor.

公开(公告)号：US11133418B2

公开(公告)日：2021-09-28

申请号：US16413425

申请日：2019-05-15

Applicant: United Microelectronics Corp.

Inventor： Yen-Chen Chen ,  Xiao Wu ,  Hai Tao Liu ,  Ming Hua Du ,  Shouguo Zhang ,  Yao-Hung Liu ,  Chin-Fu Lin ,  Chun-Yuan Wu

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45 ,  H01L29/417

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.