公开(公告)号：US11557666B2

公开(公告)日：2023-01-17

申请号：US17100935

申请日：2020-11-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Yu-Ming Hsu ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/00 ,  H01L29/778 ,  H01L21/768 ,  H01L21/67 ,  H01L29/66

Abstract: A high-electron mobility transistor includes a substrate; a channel layer on the substrate; a AlGaN layer on the channel layer; and a P—GaN gate on the AlGaN layer. The AlGaN layer comprises a first region and a second region. The first region has a composition that is different from that of the second region.

公开(公告)号：US11508818B2

公开(公告)日：2022-11-22

申请号：US17506685

申请日：2021-10-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US20220310794A1

公开(公告)日：2022-09-29

申请号：US17685400

申请日：2022-03-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US11257939B2

公开(公告)日：2022-02-22

申请号：US16711451

申请日：2019-12-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Yu-Ming Hsu ,  Yu-Chi Wang ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20

Abstract: A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, in which the buffer layer includes a first buffer layer and a second buffer layer. Preferably, the first buffer layer includes a first layer of the first buffer layer comprising AlyGa1-yN on the substrate and a second layer of the first buffer layer comprising AlxGa1-xN on the first layer of the first buffer layer. The second buffer layer includes a first layer of the second buffer layer comprising AlwGa1-wN on the first buffer layer and a second layer of the second buffer layer comprising AlzGa1-zN on the first layer of the second buffer layer, in which x>z>y>w.

公开(公告)号：US10236179B2

公开(公告)日：2019-03-19

申请号：US15099581

申请日：2016-04-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Cheng Yen ,  Tsung-Mu Yang ,  Sheng-Hsu Liu ,  Tsang-Hsuan Wang ,  Chun-Liang Kuo ,  Yu-Ming Hsu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/66

Abstract: A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

公开(公告)号：US20170301536A1

公开(公告)日：2017-10-19

申请号：US15099581

申请日：2016-04-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Fu-Cheng Yen ,  Tsung-Mu Yang ,  Sheng-Hsu Liu ,  Tsang-Hsuan Wang ,  Chun-Liang Kuo ,  Yu-Ming Hsu ,  Chung-Min Tsai ,  Yi-Wei Chen

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/0262 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02639 ,  H01L29/66795 ,  H01L29/7848

Abstract: A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

公开(公告)号：US12046639B2

公开(公告)日：2024-07-23

申请号：US17683288

申请日：2022-02-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

CPC classification number: H01L29/151 ,  H01L29/7786

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US20230253457A1

公开(公告)日：2023-08-10

申请号：US18135203

申请日：2023-04-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yu-Chi Wang ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/15 ,  H01L29/778

CPC classification number: H01L29/151 ,  H01L29/7786

Abstract: A semiconductor device includes an epitaxial substrate. The epitaxial substrate includes a substrate. A strain relaxed layer covers and contacts the substrate. A III-V compound stacked layer covers and contacts the strain relaxed layer. The III-V compound stacked layer is a multilayer epitaxial structure formed by aluminum nitride, aluminum gallium nitride or a combination of aluminum nitride and aluminum gallium nitride.

公开(公告)号：US20220208694A1

公开(公告)日：2022-06-30

申请号：US17179422

申请日：2021-02-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Hsing Chen ,  Yu-Ming Hsu ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L23/00 ,  H01L29/20

Abstract: A semiconductor structure includes a substrate including a device region, a peripheral region surrounding the device region, and a transition region disposed between the device region and the peripheral region. An epitaxial layer is disposed on the device region, the peripheral region, and the transition region. A first portion of the epitaxial layer on the peripheral region has a poly-crystal structure.

公开(公告)号：US20210249528A1

公开(公告)日：2021-08-12

申请号：US16843851

申请日：2020-04-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Ming Hsu ,  Yen-Hsing Chen ,  Tsung-Mu Yang ,  Yu-Ren Wang

IPC: H01L29/778 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66

Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.