公开(公告)号：US20180120693A1

公开(公告)日：2018-05-03

申请号：US15335458

申请日：2016-10-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuei-Hsu Chou ,  Cheng-Te Wang ,  Yung-Feng Cheng ,  Jing-Yi Lee

IPC: G03F1/36 ,  G06F17/50

CPC classification number: G03F1/36 ,  G06F17/5081

Abstract: A method of correcting a layout pattern is provided in the present invention. The method includes the following steps. A layout pattern including at least two adjacent rectangular sub patterns is provided. The layout pattern is then input into a computer system. An optical proximity correction including a bevel correction is then performed. The bevel correction includes forming a bevel at a corner of at least one of the two adjacent rectangular sub patterns, wherein the bevel is formed by chopping the corner, and moving the bevel toward an interaction of two neighboring segments of the bevel if a distance between the bevel and the other rectangular sub pattern is larger than a minimum value. The angle between a surface of the bevel and a surface of the rectangular sub pattern is not rectangular. The layout pattern is output to a mask after the optical proximity correction.

公开(公告)号：US20150125063A1

公开(公告)日：2015-05-07

申请号：US14071667

申请日：2013-11-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Te-Hsien Hsieh ,  Ming-Jui Chen ,  Cheng-Te Wang ,  Ping-I Hsieh ,  Jing-Yi Lee

IPC: G06T7/00

CPC classification number: G06T7/0004 ,  G03F1/36 ,  G06K9/00 ,  G06T7/001 ,  G06T2207/30148

Abstract: A calculation method of optical proximity correction includes providing at least a feature pattern to a computer system. At least a first template and a second template are defined so that portions of the feature pattern are located in the first template and the rest of the feature pattern is located in the second template. The first template and the second template have a common boundary. Afterwards, a first calculation zone is defined to overlap an entire first template and portions of the feature pattern out of the first template. Edges of the feature pattern within the first calculation zone are then fragmented from the common boundary towards two ends of the feature pattern so as to generate at least two first beginning segments respectively at two sides of the common boundary. Finally, positions of the first beginning segments are adjusted so as to generate first adjusted segments.

Abstract translation: 光学邻近校正的计算方法包括至少向计算机系统提供特征图案。 定义至少第一模板和第二模板，使得特征图案的部分位于第一模板中，并且特征图案的其余部分位于第二模板中。 第一个模板和第二个模板有一个共同的边界。 之后，定义第一计算区域以将整个第一模板和第一模板中的特征模式的部分重叠。 然后将第一计算区域内的特征图案的边缘从公共边界分割成特征图案的两端，以便分别在公共边界的两侧产生至少两个第一开始段。 最后，调整第一起始段的位置，以产生第一调整段。

公开(公告)号：US20140258946A1

公开(公告)日：2014-09-11

申请号：US14287079

申请日：2014-05-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hui-Fang Kuo ,  Ming-Jui Chen ,  Ting-Cheng Tseng ,  Cheng-Te Wang

IPC: G06F17/50 ,  G03F1/00

CPC classification number: G06F17/5081 ,  G03F1/00 ,  G03F1/70 ,  G03F7/20 ,  G03F7/70466

Abstract: A mask set for double exposure process and method of using said mask set. The mask set is provided with a first mask pattern having a first base and a plurality of first teeth and protruding portions, and a second mask pattern having a second base and a plurality of second teeth, wherein the second base may at least partially overlap the first base such that each of the protruding portions at least partially overlaps one of the second teeth.

Abstract translation: 用于双曝光处理的掩模组和使用所述掩模组的方法。 掩模组具有第一掩模图案，其具有第一基底和多个第一齿和突出部分，第二掩模图案具有第二基底和多个第二牙齿，其中第二基底可以至少部分地与 第一基座，使得每个突出部分至少部分地与第二齿中的一个齿重叠。

公开(公告)号：US08745547B1

公开(公告)日：2014-06-03

申请号：US13940096

申请日：2013-07-11

Applicant: United Microelectronics Corp.

Inventor： Shih-Ming Kuo ,  Ming-Jui Chen ,  Te-Hsien Hsieh ,  Cheng-Te Wang ,  Jing-Yi Lee

IPC: G06F17/50

CPC classification number: G03F1/70

Abstract: A method for making a photomask layout is disclosed. A graphic data of a photomask is provided. A first correction step is performed to the graphic data. A first verification step is performed to all of the graphic data which has been subjected to the first correction step, wherein at least one failed pattern not passing the first verification step is found. A second correction step is performed to the at least one failed pattern, so as to obtain at least one modified pattern. A second verification step is performed only to at least one buffer region covering the at least one modified pattern, wherein the buffer region has an area less than a whole area of the photomask. Besides, each of the first correction step, the first verification step, the second correction step and the second verification step is executed by a computer.

Abstract translation: 公开了一种制造光掩模布局的方法。 提供光掩模的图形数据。 对图形数据执行第一校正步骤。 对已经经过第一校正步骤的所有图形数据执行第一验证步骤，其中找到不通过第一验证步骤的至少一个故障模式。 对所述至少一个故障模式执行第二校正步骤，以便获得至少一个修改的模式。 第二验证步骤仅对覆盖至少一个修改图案的至少一个缓冲区域执行，其中缓冲区域具有小于光掩模的整个区域的面积。 此外，第一校正步骤，第一校验步骤，第二校正步骤和第二校验步骤中的每一个由计算机执行。