公开(公告)号：US08993390B2

公开(公告)日：2015-03-31

申请号：US14277812

申请日：2014-05-15

Applicant: United Microelectronics Corp.

Inventor： Kuo-Chih Lai ,  Chia Chang Hsu ,  Nien-Ting Ho ,  Bor-Shyang Liao ,  Shu Min Huang ,  Min-Chung Cheng ,  Yu-Ru Yang

IPC: H01L21/336 ,  H01L21/8234 ,  H01L21/768 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L21/76889 ,  H01L29/41791 ,  H01L29/66795

Abstract: A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed.

Abstract translation: 半导体器件的制造方法包括以下步骤。 首先，提供基板，在基板上形成至少一个翅片结构，然后在翅片结构上沉积金属层以形成自对准硅化物层。 在沉积金属层之后，除去金属层，但在除去金属层之前不进行RTP。 然后在去除金属层之后执行RTP。

公开(公告)号：US08877635B2

公开(公告)日：2014-11-04

申请号：US13913535

申请日：2013-06-10

Applicant: United Microelectronics Corp.

Inventor： Kuo-Chih Lai ,  Nien-Ting Ho ,  Shu Min Huang ,  Bor-Shyang Liao ,  Chia Chang Hsu

IPC: H01L21/44 ,  H01L21/285 ,  H01L21/02 ,  H01L29/66 ,  H01L21/28 ,  H01L21/324

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

Abstract: A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.

Abstract translation: 公开了一种用于制造金属氧化物半导体（MOS）晶体管的方法。 该方法包括以下步骤：提供其上具有硅化物的半导体衬底; 执行第一快速热处理以将铂从硅化物的表面驱入硅化物; 并在第一快速热处理中除去未反应的铂。

公开(公告)号：US20140242802A1

公开(公告)日：2014-08-28

申请号：US13775273

申请日：2013-02-25

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chia Chang Hsu ,  Kuo-Chih Lai ,  Chun-Ling Lin ,  Bor-Shyang Liao ,  Pin-Hong Chen ,  Shu Min Huang ,  Min-Chung Cheng ,  Chi-Mao Hsu

IPC: H01L21/02

CPC classification number: H01L21/02063 ,  H01L21/28518 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/76804 ,  H01L21/76814

Abstract: A semiconductor process includes the following steps. A wafer on a pedestal is provided. The pedestal is lifted to approach a heating source and an etching process is performed on the wafer. An annealing process is performed on the wafer by the heating source. In another way, a wafer on a pedestal, and a heating source on a same side of the wafer as the pedestal are provided. An etching process is performed on the wafer by setting the temperature difference between the heating source and the pedestal larger than 180° C.

Abstract translation: 半导体工艺包括以下步骤。 提供了基座上的晶片。 将基座抬起以接近加热源，并对晶片进行蚀刻处理。 通过加热源对晶片进行退火处理。 另一方面，提供了基座上的晶片和与基座在晶片相同侧的加热源。 通过将加热源和基座之间的温差设定为大于180℃，对晶片进行蚀刻处理。

公开(公告)号：US20130273736A1

公开(公告)日：2013-10-17

申请号：US13913535

申请日：2013-06-10

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuo-Chih Lai ,  Nien-Ting Ho ,  Shu Min Huang ,  Bor-Shyang Liao ,  Chia Chang Hsu

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

Abstract: A method for fabricating metal-oxide semiconductor (MOS) transistor is disclosed. The method includes the steps of: providing a semiconductor substrate having a silicide thereon; performing a first rapid thermal process to drive-in platinum from a surface of the silicide into the silicide; and removing un-reacted platinum in the first rapid thermal process.

Abstract translation: 公开了一种用于制造金属氧化物半导体（MOS）晶体管的方法。 该方法包括以下步骤：提供其上具有硅化物的半导体衬底; 执行第一快速热处理以将铂从硅化物的表面驱入硅化物; 并在第一快速热处理中除去未反应的铂。