公开(公告)号：US08735940B2

公开(公告)日：2014-05-27

申请号：US12965640

申请日：2010-12-10

申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/2003 ,  H01L29/66462

摘要： There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.

摘要翻译： 提供了一种半导体器件及其制造方法。 根据本发明的半导体器件包括：基底; 半导体层，其包括形成在所述基底基板上的接收槽和突出部，第一载流子注入层和形成为穿过形成在所述半导体层中的所述第一载流子注入层的至少两个绝缘层，以及间隔开的第二载流子注入层 除了形成在突出部上的第一载流子注入层之外; 源电极和漏电极，其设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘并且具有凹入到接收槽中的凹部的栅电极，其中接收槽的最低端部接触第一载流子注入层的最上层，并且布置的绝缘图案 在绝缘图案中的半导体层的最内侧穿过形成第一载流子注入层的整个层，并且设置在接收槽的厚度方向上的两个侧端部的外侧。

公开(公告)号：US08525231B2

公开(公告)日：2013-09-03

申请号：US12965649

申请日：2010-12-10

申请人： Ki Yeol Park ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

发明人： Ki Yeol Park ,  Woo Chul Jeon ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/66

CPC分类号： H01L29/7786 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/365 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/78681

摘要： There is provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer having a receiving groove, a protrusion part, a first carrier injection layer, at least two insulating patterns, and a second carrier injection layer provided on the base substrate, the insulating patterns being disposed to traverse the first carrier injection layer and the second carrier injection layer being spaced apart from the first carrier injection layer and disposed on a lower portion of the protrusion part; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part recessed into the receiving groove, wherein a lowest portion of the receiving groove contacts an uppermost layer of the first carrier injection layer or is disposed above the uppermost layer thereof, and an insulating pattern, disposed at an innermost portion of the semiconductor layer among the insulating patterns, traverses the first carrier injection layer and is disposed at the outside of both sides of the receiving groove in a thickness direction thereof.

摘要翻译： 提供了一种半导体器件及其制造方法。 半导体器件包括：基底; 具有接收槽的半导体层，突起部分，第一载流子注入层，至少两个绝缘图案和设置在基底基板上的第二载流子注入层，绝缘图案设置成穿过第一载流子注入层和 第二载体注入层与第一载体注入层间隔开并设置在突出部分的下部; 源电极和漏电极，设置成在半导体层上彼此间隔开; 以及与源电极和漏电极绝缘的栅电极，并且具有凹入到所述接收槽中的凹部，其中所述接收槽的最下部接触所述第一载流子注入层的最上层，或者设置在所述第一载流子注入层的最上层 并且绝缘图案设置在绝缘图案中的半导体层的最内部，穿过第一载流子注入层，并且沿着其厚度方向设置在容纳槽的两侧的外侧。

公开(公告)号：US08319308B2

公开(公告)日：2012-11-27

申请号：US12654897

申请日：2010-01-07

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L21/322 ,  H01L29/47

CPC分类号： H01L29/0692 ,  H01L29/861 ,  H01L29/872

摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer disposed on the base substrate; first ohmic electrodes disposed on a central region of the first semiconductor layer; a second ohmic electrode having a ring shape surrounding the first ohmic electrodes, on edge regions of the first semiconductor layer; a second semiconductor layer interposed between the first ohmic electrodes and the first semiconductor layer; and a Schottky electrode part which covers the first ohmic electrodes on the central regions, and is spaced apart from the second ohmic electrode.

摘要翻译： 本发明提供一种半导体器件，包括：基底; 设置在所述基底基板上的第一半导体层; 设置在第一半导体层的中心区域上的第一欧姆电极; 在所述第一半导体层的边缘区域上具有围绕所述第一欧姆电极的环形形状的第二欧姆电极; 插入在所述第一欧姆电极和所述第一半导体层之间的第二半导体层; 以及肖特基电极部件，其覆盖中心区域上的第一欧姆电极，并且与第二欧姆电极间隔开。

公开(公告)号：US20120007049A1

公开(公告)日：2012-01-12

申请号：US12917812

申请日：2010-11-02

申请人： Woo Chul JEON ,  Ki Yeol Park ,  Jung Hee Lee ,  Young Hwan Park

发明人： Woo Chul JEON ,  Ki Yeol Park ,  Jung Hee Lee ,  Young Hwan Park

IPC分类号： H01L29/778 ,  H01L21/329 ,  H01L21/335 ,  H01L29/15

CPC分类号： H01L29/872 ,  B82Y10/00 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/095 ,  H01L29/10 ,  H01L29/1075 ,  H01L29/152 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/861

摘要： The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, wherein the diode structure includes: first-type semiconductor layers; and a second-type semiconductor layer which is disposed within the first-type semiconductor layers and has both sides covered by the first-type semiconductor layers.

摘要翻译： 本发明提供一种氮化物类半导体器件。 所述氮化物系半导体器件包括：具有二极管结构的基极基板; 设置在基底基板上的外延生长膜; 以及设置在外延生长膜上的电极部分，其中所述二极管结构包括：第一类型半导体层; 以及第二类型半导体层，其设置在所述第一类型半导体层内并且具有被所述第一类型半导体层覆盖的两侧。

公开(公告)号：US20110057286A1

公开(公告)日：2011-03-10

申请号：US12654935

申请日：2010-01-08

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/861 ,  H01L29/417 ,  H01L29/66143 ,  H01L29/872

摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a second ohmic electrode disposed on the rear surface of the first semiconductor layer; a second semiconductor layer interposed between the first semiconductor layer and the first ohmic electrodes; and a Schottky electrode part which covers the first ohmic electrodes on the front surface of the first semiconductor layer.

摘要翻译： 本发明提供一种半导体器件，包括：基底; 第一半导体层，其设置在所述基底基板上，并且具有与所述前表面相对的前表面和后表面; 设置在第一半导体层的前表面上的第一欧姆电极; 设置在所述第一半导体层的后表面上的第二欧姆电极; 插入在第一半导体层和第一欧姆电极之间的第二半导体层; 以及肖特基电极部分，其覆盖第一半导体层的前表面上的第一欧姆电极。

公开(公告)号：US08426939B2

公开(公告)日：2013-04-23

申请号：US12654935

申请日：2010-01-08

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L29/739

CPC分类号： H01L29/861 ,  H01L29/417 ,  H01L29/66143 ,  H01L29/872

摘要： The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a second ohmic electrode disposed on the rear surface of the first semiconductor layer; a second semiconductor layer interposed between the first semiconductor layer and the first ohmic electrodes; and a Schottky electrode part which covers the first ohmic electrodes on the front surface of the first semiconductor layer.

摘要翻译： 本发明提供一种半导体器件，包括：基底; 第一半导体层，其设置在所述基底基板上，并且具有与所述前表面相对的前表面和后表面; 设置在第一半导体层的前表面上的第一欧姆电极; 设置在所述第一半导体层的后表面上的第二欧姆电极; 插入在第一半导体层和第一欧姆电极之间的第二半导体层; 以及肖特基电极部分，其覆盖第一半导体层的前表面上的第一欧姆电极。

公开(公告)号：US20120007053A1

公开(公告)日：2012-01-12

申请号：US12917834

申请日：2010-11-02

申请人： Woo Chul JEON ,  Ki Yeol Park ,  Jung Hee Lee ,  Young Hwan Park

发明人： Woo Chul JEON ,  Ki Yeol Park ,  Jung Hee Lee ,  Young Hwan Park

IPC分类号： H01L29/15 ,  H01L21/20

CPC分类号： H01L29/157 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66219 ,  H01L29/861 ,  H01L29/872

摘要： Disclosed herein is a nitride-based semiconductor device. The nitride-based semiconductor device includes a base substrate having a PN junction structure, an epi-growth layer disposed on the base substrate, and an electrode unit disposed on the epi-growth layer.

摘要翻译： 本文公开了一种氮化物基半导体器件。 氮化物类半导体器件包括具有PN结结构的基底衬底，设置在基底衬底上的外延生长层和设置在外延生长层上的电极单元。

公开(公告)号：US20110049572A1

公开(公告)日：2011-03-03

申请号：US12654936

申请日：2010-01-08

申请人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

发明人： Woo Chul Jeon ,  Jung Hee Lee ,  Young Hwan Park ,  Ki Yeol Park

IPC分类号： H01L29/205 ,  H01L29/872 ,  H01L21/329

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/7787

摘要： The present invention provides a semiconductor device including: a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) formed therewithin; a first ohmic electrode disposed on a central region of the semiconductor layer; a second ohmic electrode which is formed on the edge regions of the semiconductor layer in such a manner to be disposed to be spaced apart from the first ohmic electrodes, and have a ring shape surrounding the first ohmic electrode; and a Schottky electrode part which is formed on the central region to cover the first ohmic electrode and is formed to be spaced apart from the second ohmic electrode.

摘要翻译： 本发明提供一种半导体器件，包括：基底; 半导体层，其设置在所述基底基板上并具有在其中形成的二维电子气体（2DEG）; 设置在所述半导体层的中心区域上的第一欧姆电极; 形成在所述半导体层的边缘区域上的第二欧姆电极，以与所述第一欧姆电极间隔开的方式设置，并且具有环绕所述第一欧姆电极的环形形状; 以及形成在中心区域上以覆盖第一欧姆电极并形成为与第二欧姆电极间隔开的肖特基电极部分。

公开(公告)号：US08525227B2

公开(公告)日：2013-09-03

申请号：US12964218

申请日：2010-12-09

申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/66

CPC分类号： H01L29/0847 ,  B82Y10/00 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/51 ,  H01L29/518 ,  H01L29/7787 ,  H01L29/812

摘要： There is provided a semiconductor device including a base substrate; a semiconductor layer formed on the base substrate and having a mesa protrusion including a receiving groove; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer, the source electrode having a source leg and the drain electrode having a drain leg; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part received into the receiving groove. The mesa protrusion has a superlattice structure including at least one trench at an interface between the mesa protrusion and the source electrode and between the mesa protrusion and the drain electrode, respectively, and the source leg and the drain leg are received in the trench.

摘要翻译： 提供了一种包括基底的半导体器件; 半导体层，形成在所述基底基板上，并且具有包括接收槽的台面突起; 源电极和漏电极，设置成在半导体层上彼此间隔开，源电极具有源极脚，漏电极具有排放支路; 以及与源电极和漏电极绝缘并且具有容纳在接收槽中的凹部的栅电极。 台面突起具有超晶格结构，其包括分别在台面突起和源电极之间以及台面突起和漏电极之间的界面处的至少一个沟槽，并且源极腿和排出支路分别容纳在沟槽中。

公开(公告)号：US20110254057A1

公开(公告)日：2011-10-20

申请号：US12842303

申请日：2010-07-23

申请人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

发明人： Woo Chul Jeon ,  Ki Yeol Park ,  Young Hwan Park ,  Jung Hee Lee

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： Disclosed herein is a nitride based semiconductor device. The nitride based semiconductor device includes: a base substrate; an epitaxial growth layer disposed on the base substrate and having a defect generated due to lattice disparity with the base substrate; a leakage current barrier covering the epitaxial growth layer while filling the defect; and an electrode part disposed on the epitaxial growth layer.

摘要翻译： 本文公开了一种氮化物基半导体器件。 氮化物基半导体器件包括：基底; 外延生长层，其设置在所述基底基板上，并且由于与所述基底基板的晶格差异而产生缺陷; 在填充缺陷的同时覆盖外延生长层的漏电流屏障; 以及设置在外延生长层上的电极部分。