METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE
    11.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    制造半导体发光器件的方法

    公开(公告)号:US20130029440A1

    公开(公告)日:2013-01-31

    申请号:US13632856

    申请日:2012-10-01

    IPC分类号: H01L33/22

    CPC分类号: H01L33/16 H01L33/22

    摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

    摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在衬底上的多层外延结构。 衬底具有垂直于其上表面的预定晶格方向,其中预定的晶格方向从[100]或[100]到[011]或[011]的角度朝向[011]或[01 1] 使得衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。

    Light emitting device
    13.
    发明申请

    公开(公告)号:US20060163595A1

    公开(公告)日:2006-07-27

    申请号:US11326750

    申请日:2006-01-06

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22

    摘要: A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the light emitting stack; an index of refraction of the light emitting stack is different from that of the transparent adhesive layer.