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78 条记录 (耗时 0.024 秒)

    Ceramic heater
    11.
    发明授权
    Ceramic heater 有权

    公开(公告)号：US06835916B2

    公开(公告)日：2004-12-28

    申请号：US10226160

    申请日：2002-08-23

    申请人： Yasutaka Ito ,  Yasuji Hiramatsu

    发明人： Yasutaka Ito ,  Yasuji Hiramatsu

    IPC分类号： H05B368

    CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H05B3/143 ,  H05B3/265 ,  H05B3/283 ,  H05B3/74

    摘要： An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 &mgr;m according to JIS B 0601.

    Hot plate for semiconductor manufacture and testing
    12.
    发明授权
    Hot plate for semiconductor manufacture and testing 有权
    热板用于半导体制造和测试

    公开(公告)号：US06809299B2

    公开(公告)日：2004-10-26

    申请号：US10069510

    申请日：2002-06-20

    申请人： Yasuji Hiramatsu ,  Yasutaka Ito

    发明人： Yasuji Hiramatsu ,  Yasutaka Ito

    IPC分类号： H05B368

    CPC分类号： H05B3/74 ,  H01L21/67103 ,  H05B3/143 ,  H05B3/265

    摘要： A hot plate for a semiconductor producing/examining device, in which hot plate, when an object to be heated such as a silicon wafer is heated in a state that the object is distanced by a certain distance from the heating face, air is less likely to stagnate between the silicon wafer and the heating face and thus the object to be heated can be evenly heated. Specifically, the hot plate for a semiconductor producing/examining device includes a resistance heating element formed on a surface of a ceramic substrate or inside the ceramic substrate, wherein the glossiness of the heating face of the ceramic substrate is 1.5% or more.

    摘要翻译： 一种用于半导体制造/检查装置的热板，其中当板被加热物体等离开加热面一定距离的状态下，加热板时，加热板上的热板不太可能 在硅晶片和加热面之间停滞，从而可以均匀地加热待加热物体。 具体地，半导体制造/检查装置用热板包括形成在陶瓷基板的表面或陶瓷基板内部的电阻加热元件，其中陶瓷基板的加热面的光泽度为1.5％以上。

    Apparatus for performing exposure control pertaining to the luminance level of an object
    13.
    发明授权
    Apparatus for performing exposure control pertaining to the luminance level of an object 失效
    用于执行与物体的亮度水平有关的曝光控制的装置

    公开(公告)号：US5559555A

    公开(公告)日：1996-09-24

    申请号：US442495

    申请日：1995-05-16

    申请人： Shuji Shimizu ,  Osamu Kuroda ,  Yasutaka Ito ,  Yoshikazu Takahashi

    发明人： Shuji Shimizu ,  Osamu Kuroda ,  Yasutaka Ito ,  Yoshikazu Takahashi

    IPC分类号： H04N5/232 ,  H04N5/235 ,  H04N5/238

    CPC分类号： H04N5/2327 ,  H04N5/23248 ,  H04N5/23258 ,  H04N5/23274 ,  H04N5/2352

    摘要： An exposing apparatus comprises: a lens group to fetch a light from an object; an iris to adjust a light amount from the lens group; an image pickup device to convert the light which passed through the iris into the electric signal; a detecting circuit to detect a luminance signal level from an output signal from the image pickup device; a reference level signal setting circuit to set an exposure control reference value to control the iris; an exposure control reference value modulating circuit to modulate the exposure control reference value when the iris is controlled; and a control circuit to set the exposure control reference value in correspondence to the luminance signal level when an output level of the detecting circuit is larger than a set value.

    摘要翻译： 曝光装置包括：用于从物体取出光的透镜组; 调整透镜组的光量的虹膜; 将通过虹膜的光转换成电信号的图像拾取装置; 检测电路，用于根据来自图像拾取装置的输出信号检测亮度信号电平; 基准电平信号设定电路，设定曝光控制基准值以控制所述光圈; 曝光控制基准值调制电路，用于当所述光圈被控制时调制所述曝光控制基准值; 以及控制电路，用于当检测电路的输出电平大于设定值时，根据亮度信号电平设定曝光控制基准值。

    ROTARY ANODE X-RAY TUBE
    15.
    发明申请
    ROTARY ANODE X-RAY TUBE 有权
    旋转阳极X射线管

    公开(公告)号：US20110058654A1

    公开(公告)日：2011-03-10

    申请号：US12875559

    申请日：2010-09-03

    申请人： Chiharu Tadokoro ,  Yasutaka Ito ,  Hitoshi Hattori ,  Ryoichi Takahashi ,  Tetsuya Yonezawa ,  Hironori Nakamuta

    发明人： Chiharu Tadokoro ,  Yasutaka Ito ,  Hitoshi Hattori ,  Ryoichi Takahashi ,  Tetsuya Yonezawa ,  Hironori Nakamuta

    IPC分类号： H01J35/00

    CPC分类号： H01J35/101 ,  H01J2235/106 ,  H01J2235/1086

    摘要： A rotary anode X-ray tube apparatus according to an embodiment of the present invention includes a stationary shaft, a cooling bath that is provided in the stationary shaft, a rotary cylinder that is rotatably supported to the stationary shaft, a target that is provided in the rotary cylinder, a cathode that is disposed to face the target, and a vacuum enclosure that stores these components. The stationary shaft has a large-diameter portion provided in a portion thereof and is provided with a flow passage through which a cooling fluid flows. The cooling bath is provided by thinning the wall thickness of the large-diameter portion to increase the flow passage diameter of a portion of the flow passage. The rotary cylinder covers an area of the stationary shaft including the large-diameter portion through a liquid metal and is rotatably supported to the stationary shaft. The target has a hollow circular plate shape that is provided on an outer circumferential surface of the rotary cylinder. The vacuum enclosure stores the stationary shaft, the rotary cylinder, the target, and the cathode and supports the stationary shaft.

    摘要翻译： 根据本发明实施例的旋转阳极X射线管装置包括固定轴，设置在固定轴中的冷却槽，可旋转地支撑在固定轴上的旋转圆筒，设置在 旋转圆筒，设置为面对靶的阴极和存储这些部件的真空外壳。 固定轴具有设置在其一部分中的大直径部分，并且设置有冷却流体流过的流动通道。 通过减薄大直径部分的壁厚来提供冷却浴，以增加流路的一部分的流路直径。 旋转圆筒通过液体金属覆盖包括大直径部分的固定轴的区域，并且可旋转地支撑在固定轴上。 目标具有设置在旋转圆筒的外周面上的中空圆板形状。 真空外壳存放固定轴，旋转圆筒，目标和阴极，并支撑固定轴。

    ROTATING ANODE X-RAY TUBE
    16.
    发明申请
    ROTATING ANODE X-RAY TUBE 有权
    旋转阳极X射线管

    公开(公告)号：US20090225950A1

    公开(公告)日：2009-09-10

    申请号：US12469254

    申请日：2009-05-20

    申请人： Tetsuya Yonezawa ,  Hironori Nakamuta ,  Ryoichi Takahashi ,  Yasuo Yoshii ,  Hitoshi Hattori ,  Yasutaka Ito

    发明人： Tetsuya Yonezawa ,  Hironori Nakamuta ,  Ryoichi Takahashi ,  Yasuo Yoshii ,  Hitoshi Hattori ,  Yasutaka Ito

    IPC分类号： H01J35/00

    CPC分类号： H01J35/106 ,  H01J2235/1006 ,  H01J2235/1046 ,  H01J2235/108 ,  H01J2235/1204 ,  H01J2235/1262

    摘要： A rotating anode X-ray tube includes a fixed body having a radial sliding bearing surface and a channel therein through which a coolant flows, a rotor including a discoid large-diameter portion, which has a recess fitted with one end portion of the fixed body with a clearance therebetween and constitutes an anode target, and a small-diameter portion, which has on an inner surface thereof a radial sliding bearing surface which faces the aforesaid radial sliding bearing surface with a clearance, and is united with the large-diameter portion at one end portion thereof, a lubricant filling the clearances, a cathode arranged opposite to the anode target, and a vacuum envelope which contains the fixed body, the rotor, the lubricant and the cathode, and fixes the fixed body at another end portion of the fixed body situated opposite the one end portion of the fixed body fitted in the recess.

    摘要翻译： 旋转阳极X射线管包括具有径向滑动轴承表面的固定体和冷却剂流过的通道，包括盘状大直径部分的转子，其具有与固定体的一个端部配合的凹部 并且构成阳极靶，小直径部分在其内表面上具有与所述径向滑动轴承表面间隙相对的径向滑动轴承表面，并与大直径部分 在其一端部分填充有间隙的润滑剂，与阳极靶相对的阴极，以及包含固定体，转子，润滑剂和阴极的真空外壳，并将固定体固定在另一端部 所述固定体位于与所述凹部中嵌合的所述固定体的一端部相对的位置。

    Semiconductor production device ceramic plate
    17.
    发明授权
    Semiconductor production device ceramic plate 有权
    半导体制造装置陶瓷板

    公开(公告)号：US07084376B2

    公开(公告)日：2006-08-01

    申请号：US10346095

    申请日：2003-01-17

    申请人： Yasutaka Ito ,  Yasuji Hiramatsu

    发明人： Yasutaka Ito ,  Yasuji Hiramatsu

    IPC分类号： H05B3/68 ,  C23C16/00

    CPC分类号： H01L21/6831 ,  H01L21/6833

    摘要： A ceramic board is provided which, when used as a heater, heats a silicon wafer uniformly throughout and, hence, does not damage the wafer and, when used as an electrostatic chuck, provides a sufficient chucking force. A ceramic board is provided for semiconductor manufacture apparatuses comprising a ceramic substrate and a semiconductor wafer mounted thereon directly or supported indirectly at a fixed distance from its surface, wherein the surface of said ceramic substrate, where said semiconductor wafer is to be mounted or supported, is controlled to a flatness of 1 to 50 μm over a measurement range of [(diametric end-to-end length)−10 mm].

    摘要翻译： 提供陶瓷板，当用作加热器时，均匀地加热硅晶片，并且因此不会损坏晶片，并且当用作静电卡盘时，提供足够的夹紧力。 为包括陶瓷基板和安装在其上的半导体晶片的半导体制造装置提供陶瓷板，其间直接或间接地支撑在其表面上固定距离处，其中所述陶瓷基板的要安装或支撑半导体晶片的表面， 在[（直径端对端长度）〜10mm]的测量范围内被控制为1〜50μm的平坦度。

    Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor
    18.
    发明授权
    Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor 有权
    含碳氮化铝烧结体和用于制造或检测半导体的设备的陶瓷衬底

    公开(公告)号：US07015166B2

    公开(公告)日：2006-03-21

    申请号：US10876665

    申请日：2004-06-28

    申请人： Yasutaka Ito ,  Yasuji Hiramatsu

    发明人： Yasutaka Ito ,  Yasuji Hiramatsu

    IPC分类号： C04B35/581

    CPC分类号： H01L21/67103 ,  C04B35/581 ,  H01L21/6831 ,  Y10T279/23 ,  Y10T428/24917 ,  Y10T428/30

    摘要： An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108 Ω·cm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.

    摘要翻译： 本发明的目的是提供一种氮化铝烧结体，其可以保持体积电阻率为10 -8Ω或更大，并且保证覆盖能力，大的辐射热量 和热量测量仪的测量精度。 本发明的含碳氮化铝烧结体，其特征在于，具有：在其X射线衍射图上峰不能被检出或其峰值低于其检测限的碳; 在由氮化铝制成的基体中。

    Ceramic substrate for semiconductor manufacturing, and method of manufacturing the ceramic substrate
    19.
    发明授权
    Ceramic substrate for semiconductor manufacturing, and method of manufacturing the ceramic substrate 有权
    用于半导体制造的陶瓷基板以及陶瓷基板的制造方法

    公开(公告)号：US06960743B2

    公开(公告)日：2005-11-01

    申请号：US10398393

    申请日：2001-12-05

    申请人： Yasuji Hiramatsu ,  Yasutaka Ito

    发明人： Yasuji Hiramatsu ,  Yasutaka Ito

    IPC分类号： H01L21/00 ,  H01L21/68 ,  H01L21/687 ,  H05B3/14 ,  H05B3/68

    CPC分类号： H01L21/6875 ,  H01L21/67103 ,  H01L21/6835 ,  H01L21/68757 ,  H01L21/68785 ,  H05B3/141 ,  H05B3/143 ,  Y10T29/49083

    摘要： A ceramic substrate for a semiconductor-producing/examining device, in which it is possible to promptly raise its temperature, a heating face thereof has a small temperature variation, and no semiconductor wafer and the like is damaged or distorted by thermal impact. The ceramic substrate for a semiconductor-producing/examining device has a resistance heating element formed on a surface thereof or inside thereof, wherein a projected portion for fitting a semiconductor wafer is formed along the periphery thereof and a large number of convex bodies, which make contact with the semiconductor wafer, are formed inside the projected portion.

    摘要翻译： 一种用于半导体制造/检查装置的陶瓷基板，其中可以及时升高其温度，其加热面具有较小的温度变化，并且半导体晶片等不会受到热冲击的损坏或变形。 用于半导体制造/检查装置的陶瓷基板具有形成在其表面或其内部的电阻加热元件，其中用于装配半导体晶片的突出部分沿其周边形成并且形成多个凸体，这使得 与半导体晶片接触形成在突出部内。