公开(公告)号：US08385055B2

公开(公告)日：2013-02-26

申请号：US12398518

申请日：2009-03-05

申请人： Chi-Jen Kao ,  Yi-Kai Wang ,  Yu-Rung Peng ,  Tsung-Hua Yang ,  Tarng-Shiang Hu

发明人： Chi-Jen Kao ,  Yi-Kai Wang ,  Yu-Rung Peng ,  Tsung-Hua Yang ,  Tarng-Shiang Hu

IPC分类号： G06F1/16

CPC分类号： G06F1/1652 ,  G06F1/1616

摘要： An electronic device and a display panel thereof are provided. The electronic device includes a first display panel and a casing. The first display panel has a first displaying part and a second displaying part. The first display panel includes a first bending mechanism which is disposed between the first displaying part and the second displaying part to bend or spread the first display panel. The casing has a first surface and a second surface opposite to the first surface. The casing includes a rail mechanism which is disposed on the second surface. The second displaying part is slid on the rail mechanism to shift the first display panel relatively to the casing.

摘要翻译： 提供了一种电子设备及其显示面板。 电子设备包括第一显示面板和外壳。 第一显示面板具有第一显示部和第二显示部。 第一显示面板包括第一弯曲机构，其设置在第一显示部和第二显示部之间，以弯曲或展开第一显示面板。 壳体具有与第一表面相对的第一表面和第二表面。 壳体包括设置在第二表面上的轨道机构。 第二显示部分在轨道机构上滑动以相对于壳体移动第一显示面板。

公开(公告)号：US08001491B2

公开(公告)日：2011-08-16

申请号：US12344255

申请日：2008-12-25

申请人： Chi-Jen Kao ,  Yu-Rung Peng ,  Tsung-Hua Yang ,  Yi-Kai Wang ,  Tarng-Shiang Hu

发明人： Chi-Jen Kao ,  Yu-Rung Peng ,  Tsung-Hua Yang ,  Yi-Kai Wang ,  Tarng-Shiang Hu

IPC分类号： G06F17/50 ,  H01L29/08 ,  H01L29/04 ,  H01L21/00 ,  H01L51/40

CPC分类号： H01L51/0558 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

摘要： A method of fabricating an organic thin film transistor is provided. The method includes forming a source, a drain and a gate on a substrate and forming a dielectric layer to isolate the gate from the source and isolate the gate from the drain. An organic active material layer is formed on the substrate to fill a channel region between the source and the drain and cover the source and the drain. A barrier material layer is formed on the organic active material layer. Thereafter, the barrier material layer and the organic active material layer are patterned to form a barrier layer and an organic active layer and expose the source and the drain.

摘要翻译： 提供一种制造有机薄膜晶体管的方法。 该方法包括在衬底上形成源极，漏极和栅极，并形成电介质层以将栅极与源极隔离，并将栅极与漏极隔离。 在基板上形成有机活性物质层，以填充源极和漏极之间的沟道区域并覆盖源极和漏极。 在有机活性物质层上形成阻挡材料层。 此后，对阻挡材料层和有机活性材料层进行构图以形成阻挡层和有机活性层，并暴露出源极和漏极。

公开(公告)号：US20100096620A1

公开(公告)日：2010-04-22

申请号：US12344255

申请日：2008-12-25

申请人： Chi-Jen Kao ,  Yu-Rung Peng ,  Tsung-Hua Yang ,  Yi-Kai Wang ,  Tarng-Shiang Hu

发明人： Chi-Jen Kao ,  Yu-Rung Peng ,  Tsung-Hua Yang ,  Yi-Kai Wang ,  Tarng-Shiang Hu

IPC分类号： H01L51/05 ,  H01L21/02

CPC分类号： H01L51/0558 ,  H01L51/0529 ,  H01L51/0541 ,  H01L51/0545

摘要： A method of fabricating an organic thin film transistor is provided. The method includes forming a source, a drain and a gate on a substrate and forming a dielectric layer to isolate the gate from the source and isolate the gate from the drain. An organic active material layer is formed on the substrate to fill a channel region between the source and the drain and cover the source and the drain. A barrier material layer is formed on the organic active material layer. Thereafter, the barrier material layer and the organic active material layer are patterned to form a barrier layer and an organic active layer and expose the source and the drain.

摘要翻译： 提供一种制造有机薄膜晶体管的方法。 该方法包括在衬底上形成源极，漏极和栅极，并形成电介质层以将栅极与源极隔离，并将栅极与漏极隔离。 在基板上形成有机活性物质层，以填充源极和漏极之间的沟道区域并覆盖源极和漏极。 在有机活性物质层上形成阻挡材料层。 此后，对阻挡材料层和有机活性材料层进行构图以形成阻挡层和有机活性层，并暴露出源极和漏极。

公开(公告)号：US07851800B2

公开(公告)日：2010-12-14

申请号：US12345666

申请日：2008-12-30

申请人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

发明人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

IPC分类号： H01L31/00

CPC分类号： H01L27/3262 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2227/323 ,  Y10T428/24802

摘要： A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit.

摘要翻译： 提供TFT和OLED装置。 TFT包括衬底，栅极，栅极绝缘体，源极/漏极层，隔离层和沟道层。 栅极设置在基板上。 栅极绝缘体设置在基板上并覆盖栅极。 源极/漏极层设置在栅极绝缘体上，并且将栅极绝缘体的一部分暴露在栅极上方。 隔离层设置在源极/漏极层上并且具有用于暴露栅极绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。 沟道层设置在隔离层的开口中。 此外，沟道层由开口露出并且电连接到源极/漏极层。 另一方面，OLED器件主要包括驱动电路和有机电致发光单元。

公开(公告)号：US07834357B2

公开(公告)日：2010-11-16

申请号：US11871153

申请日：2007-10-11

申请人： Yi-Kai Wang ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

发明人： Yi-Kai Wang ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

IPC分类号： H01L29/786

CPC分类号： H01L51/102 ,  H01L27/283 ,  H01L51/0023 ,  H01L51/0545

摘要： A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.

摘要翻译： 提供了薄膜晶体管（TFT）的结构。 衬底具有彼此相对的第一表面和第二表面，其中第一表面具有图案化掩模层。 图案化的第一电极层设置在基板的第二表面上，并且具有栅极部分和电容器电极部分。 图案化的第二电极层设置在衬底的第二表面上并且具有源极和漏极，其中图案化的第二电极层与图案化的第一电极层自对准，通过将图案化的第一表面暴露于衬底的第一表面 掩模层作为掩模。 在图案化的第一电极层和图案化的第二电极层之间设置绝缘层。

公开(公告)号：US20090298241A1

公开(公告)日：2009-12-03

申请号：US12536492

申请日：2009-08-06

申请人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

发明人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

IPC分类号： H01L21/336

CPC分类号： H01L51/057 ,  Y10S438/944 ,  Y10S438/951

摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

摘要翻译： 公开了制造垂直薄膜晶体管（垂直TFT）的方法，其中使用荫罩来制造垂直结构的TFT器件。 首先，形成用作肋和栅极层的金属层。 接下来，在栅极层上设置荫罩。 之后，将荫罩用作掩模以形成源极层，有机半导体层和漏极层。 因此，该过程被简化。 由于不需要光刻工艺，因此避免了有机半导体层的损坏，并且可以获得具有所需电特性的垂直TFT。

公开(公告)号：US20080099843A1

公开(公告)日：2008-05-01

申请号：US11871153

申请日：2007-10-11

申请人： Yi-Kai Wang ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

发明人： Yi-Kai Wang ,  Liang-Ying Huang ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

IPC分类号： H01L27/12

CPC分类号： H01L51/102 ,  H01L27/283 ,  H01L51/0023 ,  H01L51/0545

摘要： A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.

摘要翻译： 提供了薄膜晶体管（TFT）的结构。 衬底具有彼此相对的第一表面和第二表面，其中第一表面具有图案化掩模层。 图案化的第一电极层设置在基板的第二表面上，并且具有栅极部分和电容器电极部分。 图案化的第二电极层设置在衬底的第二表面上并且具有源极和漏极，其中图案化的第二电极层与图案化的第一电极层自对准，通过将图案化的第一表面暴露于衬底的第一表面 掩模层作为掩模。 在图案化的第一电极层和图案化的第二电极层之间设置绝缘层。

公开(公告)号：US20070145480A1

公开(公告)日：2007-06-28

申请号：US11308562

申请日：2006-04-07

申请人： Hsiang-Yuan Cheng ,  Yi-Kai Wang ,  Tarng-Shiang Hu

发明人： Hsiang-Yuan Cheng ,  Yi-Kai Wang ,  Tarng-Shiang Hu

IPC分类号： H01L27/12

CPC分类号： H01L51/0021 ,  H01L51/0015 ,  H01L51/0023 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： A method of forming an electrode of a semiconductor device is provided. A material layer comprising an organo-metallic compound is first formed on a substrate. Thereafter, an electrode is formed by irradiating the material layer through utilizing the heating property of laser. Next, the material layer is patterned by utilizing the photochemical or heating properties of laser using a laser. Because laser irradiation is substituted the traditional heating way, it can reduce process temperature. Furthermore, because the laser is used for patterning the material layer to form the electrode, therefore an electrode pattern with a greater precision may be obtained compared to that obtained by using the photolithography process.

摘要翻译： 提供一种形成半导体器件的电极的方法。 首先在基材上形成包含有机金属化合物的材料层。 此后，通过利用激光的加热性质照射材料层来形成电极。 接下来，通过利用激光的激光的光化学或加热特性对材料层进行构图。 由于激光照射被传统加热方式所取代，因此可以降低工艺温度。 此外，由于激光用于图案化材料层以形成电极，因此与通过使用光刻工艺获得的电极图案相比，可以获得具有更高精度的电极图案。

公开(公告)号：US07588971B2

公开(公告)日：2009-09-15

申请号：US11778668

申请日：2007-07-17

申请人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

发明人： Yi-Kai Wang ,  Tsung-Hsien Lin ,  Tarng-Shiang Hu ,  Yu-Yuan Shen

IPC分类号： H01L29/786 ,  H01L21/84

CPC分类号： H01L51/057 ,  Y10S438/944 ,  Y10S438/951

摘要： A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

公开(公告)号：US20070160813A1

公开(公告)日：2007-07-12

申请号：US11309735

申请日：2006-09-19

申请人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

发明人： Tarng-Shiang Hu ,  Yi-Kai Wang ,  Jing-Yi Yan ,  Tsung-Hsien Lin ,  Jia-Chong Ho

IPC分类号： G03G7/00

CPC分类号： H01L27/3262 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5259 ,  H01L2227/323 ,  Y10T428/24802

摘要： A method of fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulator is formed on the substrate to cover the gate. A source/drain layer is formed on the gate insulator, and a portion of the gate insulator above the gate is exposed by the source/drain layer. An isolated layer is formed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. A channel layer is formed in the opening of the isolated layer to be electrically connected to the source/drain layer, and the channel layer is exposed by the opening.

摘要翻译： 提供一种制造薄膜晶体管的方法。 栅极形成在基板上。 在基板上形成栅极绝缘体以覆盖栅极。 源极/漏极层形成在栅极绝缘体上，并且栅极上方的栅极绝缘体的一部分被源极/漏极层暴露。 在源极/漏极层上形成隔离层，并且具有用于暴露栅绝缘体的一部分和栅极上方的源极/漏极层的一部分的开口。 沟道层形成在隔离层的开口中，以电连接到源极/漏极层，沟道层被开口暴露。