公开(公告)号：US09024402B2

公开(公告)日：2015-05-05

申请号：US13695553

申请日：2011-11-02

Applicant: Yimin Kang ,  Zhihong Connie Huang ,  Han-Din Dean Liu ,  Yuval Saado ,  Yun-Chung Neil Na

Inventor： Yimin Kang ,  Zhihong Connie Huang ,  Han-Din Dean Liu ,  Yuval Saado ,  Yun-Chung Neil Na

IPC: H01L31/0232 ,  H01L31/107 ,  H01L29/732 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L31/028

CPC classification number: H01L31/02327 ,  H01L31/028 ,  H01L31/107

Abstract: Devices comprised of end-on waveguide-coupled photodetectors are described. In embodiments of the invention, the photodetectors are avalanche photodiodes coupled end-on to a waveguide. The waveguide includes an insulating trench proximate to the coupled photodetector. In embodiments of the invention, the avalanche photodiodes are silicon/germanium avalanche photodiodes.

Abstract translation: 描述了由末端波导耦合光电探测器组成的器件。 在本发明的实施例中，光电检测器是雪崩光电二极管，其端接到波导上。 波导包括靠近耦合的光电检测器的绝缘沟槽。 在本发明的实施例中，雪崩光电二极管是硅/锗雪崩光电二极管。

公开(公告)号：US20140217537A1

公开(公告)日：2014-08-07

申请号：US13996528

申请日：2011-12-28

Applicant: Yun-Chung Neil Na ,  Yuval Saada ,  Yimin Kang

Inventor： Yun-Chung Neil Na ,  Yuval Saada ,  Yimin Kang

IPC: H01L31/0232

CPC classification number: H01L31/02327 ,  G01J1/0204 ,  G01J1/0411 ,  G01J1/0414 ,  G02B6/4204 ,  G02B6/4214 ,  G02B6/43 ,  H05K1/0274

Abstract: A photonic integrated circuit (I/C) includes a focusing sidewall or in-plane surface that redirects and focuses light from a waveguide to a photodetector structure. The focusing includes redirecting an optical signal to a width smaller than a width of the waveguide. The focusing of the light allows the photodetector structure to be outside a waveguide defined by parallel oxide structures. With the photodetector structure outside the waveguide, the contacts can be placed closer together, which reduces contact resistance.

Abstract translation: 光子集成电路（I / C）包括将来自波导的光重定向并聚焦到光电检测器结构的聚焦侧壁或平面内表面。 聚焦包括将光信号重定向到小于波导宽度的宽度。 光的聚焦允许光电检测器结构在由平行氧化物结构限定的波导的外部。 利用光电检测器结构在波导外部，触点可以更靠近放置，这降低了接触电阻。

公开(公告)号：US08723221B2

公开(公告)日：2014-05-13

申请号：US13899896

申请日：2013-05-22

Applicant: Yun-chung N. Na ,  Yimin Kang

Inventor： Yun-chung N. Na ,  Yimin Kang

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L31/02005 ,  G02B6/4295 ,  G02B2006/12097 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/547

Abstract: Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.

Abstract translation: 光电检测器可操作以实现超低电压下的光生载流子的倍增。 实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。 两个p-i-n结构可以共享p型区域或n型区域作为第一端子。 掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。 第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

公开(公告)号：US08461624B2

公开(公告)日：2013-06-11

申请号：US12952023

申请日：2010-11-22

Applicant: Yun-chung N Na ,  Yimin Kang

Inventor： Yun-chung N Na ,  Yimin Kang

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L31/02005 ,  G02B6/4295 ,  G02B2006/12097 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/547

Abstract: Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.

Abstract translation: 光电检测器可操作以实现超低电压下的光生载流子的倍增。 实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。 两个p-i-n结构可以共享p型区域或n型区域作为第一端子。 掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。 第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。