公开(公告)号：US20120126286A1

公开(公告)日：2012-05-24

申请号：US12952023

申请日：2010-11-22

Applicant: Yun-chung N. Na ,  Yimin Kang

Inventor： Yun-chung N. Na ,  Yimin Kang

IPC: H01L31/107 ,  G01J1/18

CPC classification number: H01L31/02005 ,  G02B6/4295 ,  G02B2006/12097 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/547

Abstract: Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.

Abstract translation: 光电检测器可操作以实现超低电压下的光生载流子的倍增。 实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。 两个p-i-n结构可以共享p型区域或n型区域作为第一端子。 掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。 第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

公开(公告)号：US08461624B2

公开(公告)日：2013-06-11

申请号：US12952023

申请日：2010-11-22

Applicant: Yun-chung N Na ,  Yimin Kang

Inventor： Yun-chung N Na ,  Yimin Kang

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L31/02005 ,  G02B6/4295 ,  G02B2006/12097 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/547

Abstract: Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.

Abstract translation: 光电检测器可操作以实现超低电压下的光生载流子的倍增。 实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。 两个p-i-n结构可以共享p型区域或n型区域作为第一端子。 掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。 第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

公开(公告)号：US08723221B2

公开(公告)日：2014-05-13

申请号：US13899896

申请日：2013-05-22

Applicant: Yun-chung N. Na ,  Yimin Kang

Inventor： Yun-chung N. Na ,  Yimin Kang

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: H01L31/02005 ,  G02B6/4295 ,  G02B2006/12097 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/547

Abstract: Photodetectors operable to achieve multiplication of photogenerated carriers at ultralow voltages. Embodiments include a first p-i-n semiconductor junction combined with a second p-i-n semiconductor junction to form a monolithic photodetector having at least three terminals. The two p-i-n structures may share either the p-type region or the n-type region as a first terminal. Regions of the two p-i-n structures doped complementary to that of the shared terminal form second and third terminals so that the first and second p-i-n structures are operable in parallel. A multiplication region of the first p-i-n structure is to multiply charge carriers photogenerated within an absorption region of the second p-i-n structure with voltage drops between the shared first terminal and each of the second and third terminals being noncumulative.

Abstract translation: 光电检测器可操作以实现超低电压下的光生载流子的倍增。 实施例包括与第二p-i-n半导体结组合的第一p-i-n半导体结，以形成具有至少三个端子的单片光电检测器。 两个p-i-n结构可以共享p型区域或n型区域作为第一端子。 掺杂与共享终端的两个p-i-n结构的区域形成第二和第三端子，使得第一和第二p-i-n结构可并行操作。 第一p-i-n结构的乘法区域是在共享的第一端子和第二和第三端子的每一个之间的电压降是不累积的，以使在第二p-i-n结构的吸收区域内产生的电荷载流倍增。

公开(公告)号：US09614119B2

公开(公告)日：2017-04-04

申请号：US13976379

申请日：2011-12-29

Applicant: Yimin Kang ,  Han-Din Liu

Inventor： Yimin Kang ,  Han-Din Liu

IPC: H01L31/107 ,  H01L33/00 ,  H01L31/0352

CPC classification number: H01L33/0012 ,  H01L31/035272 ,  H01L31/1075

Abstract: An Si/Ge SACM avalanche photo-diodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various layers of particular thicknesses and doping concentrations. An optical waveguide can guide infrared and/or optical signals or energy into the absorption region. The resulting photo-generated carriers are swept into the i-Si layer and/or multiplication region for avalanche multiplication. The APD has a breakdown bias voltage of well less than 12 V and an operating bandwidth of greater than 10 GHz, and is therefore suitable for use in consumer electronic devices, high speed communication networks, and the like.

公开(公告)号：US09761746B2

公开(公告)日：2017-09-12

申请号：US13976369

申请日：2013-03-11

Applicant: Yimin Kang ,  Han-Din D. Liu ,  Ansheng Liu

Inventor： Yimin Kang ,  Han-Din D. Liu ,  Ansheng Liu

IPC: H01S5/02 ,  H01L31/107 ,  H01L31/028 ,  H01L31/0232 ,  G02B6/26 ,  H01L35/24 ,  G02B6/12 ,  H01L31/105 ,  H01L31/18

CPC classification number: H01L31/028 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/131 ,  G02B6/30 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/547

Abstract: A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.

公开(公告)号：US07683397B2

公开(公告)日：2010-03-23

申请号：US11490994

申请日：2006-07-20

Applicant: Gadi Sarid ,  Yimin Kang ,  Alexandre Pauchard

Inventor： Gadi Sarid ,  Yimin Kang ,  Alexandre Pauchard

IPC: H01L31/0336

CPC classification number: H01L31/1075 ,  H01L31/028 ,  H01L31/035281 ,  Y02E10/547

Abstract: An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a mesa structure defined in a first type of semiconductor. The first type of semiconductor material includes an absorption region optically coupled to receive and absorb an optical beam. The apparatus also includes a planar region proximate to and separate from the mesa structure and defined in a second type of semiconductor material. The planar region includes a multiplication region including a p doped region adjoining an n doped region to create a high electric field in the multiplication region. The high electric field is to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the mesa structure.

Abstract translation: 公开了一种雪崩光电探测器。 根据本发明的方面的装置包括在第一类型的半导体中限定的台面结构。 第一类型的半导体材料包括光学耦合以接收和吸收光束的吸收区域。 该装置还包括靠近并与台面结构分离并且在第二类型的半导体材料中限定的平面区域。 平面区域包括包括邻接n掺杂区域的p掺杂区域的乘法区域，以在乘法区域中产生高电场。 高电场是对接收在台面结构中的光束的吸收进行响应而产生的电荷载流子。

公开(公告)号：US20150037048A1

公开(公告)日：2015-02-05

申请号：US14129181

申请日：2013-08-02

Applicant: Yun-Chung Na ,  Han-Din Liu ,  Yimin Kang ,  Shu-Lu Chen

Inventor： Yun-Chung Na ,  Han-Din Liu ,  Yimin Kang ,  Shu-Lu Chen

IPC: H01L31/0216 ,  H01L31/0224 ,  H04B10/60 ,  H01L31/0232 ,  H01L31/108 ,  H01L31/18 ,  H01L31/107 ,  H01L31/028

CPC classification number: H01L31/02161 ,  G02B6/12004 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/107 ,  H01L31/1085 ,  H01L31/1868 ,  H01L31/1872 ,  H04B10/60 ,  Y02E10/547 ,  Y02P70/521

Abstract: A low voltage photodetector structure including a semiconductor device layer, which may be Ge, is disposed over a substrate semiconductor, which may be Si, for example within a portion of a waveguide extending laterally within a photonic integrated circuit (PIC) chip. In exemplary embodiments where the device layer is formed over an insulator layer, the insulator layer is removed to expose a surface of the semiconductor device layer and a passivation material formed as a replacement for the insulator layer within high field regions. In further embodiments, controlled avalanche gain is achieved by spacing electrodes in a metal-semiconductor-metal (MSM) architecture, or complementary doped regions in a p-i-n architecture, to provide a field strength sufficient for impact ionization over a distance not significantly more than an order of magnitude greater than the distance that a carrier must travel so as to acquire sufficient energy for impact ionization.

Abstract translation: 包括可以是Ge的半导体器件层的低电压光电检测器结构设置在衬底半导体上，衬底半导体可以是Si，例如在光子集成电路（PIC）芯片内横向延伸的波导的一部分内。 在其中器件层形成在绝缘体层上的示例性实施例中，去除绝缘体层以暴露半导体器件层的表面和形成为高场区域内的绝缘体层的替代物的钝化材料。 在另外的实施例中，受控的雪崩增益通过在金属 - 半导体 - 金属（MSM）结构中的电极间隔或引脚结构中的互补掺杂区域间隔来实现，以提供足够的冲击电离的场强，该距离不大于 数量级大于载体必须行进的距离，以获得足够的能量进行冲击电离。

公开(公告)号：US20140252411A1

公开(公告)日：2014-09-11

申请号：US13976369

申请日：2013-03-11

Applicant: Yimin Kang ,  Han-Din D. Liu ,  Ansheng Liu

Inventor： Yimin Kang ,  Han-Din D. Liu ,  Ansheng Liu

IPC: H01L31/028 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/18 ,  H01L31/105

CPC classification number: H01L31/028 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/131 ,  G02B6/30 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/107 ,  H01L31/1804 ,  Y02E10/547

Abstract: A low voltage APD is disposed at an end of a waveguide extending laterally within a silicon device layer of a PIC chip. The APD is disposed over an inverted re-entrant mirror co-located at the end of the waveguide to couple light by internal reflection from the waveguide to an under side of the APD. In exemplary embodiments, a 45°-55° facet is formed in the silicon device layer by crystallographic etch. In embodiments, the APD includes a silicon multiplication layer, a germanium absorption layer over the multiplication layer, and a plurality of ohmic contacts disposed over the absorption layer. An overlying optically reflective metal film interconnects the plurality of ohmic contacts and returns light transmitted around the ohmic contacts to the absorption layer for greater detector responsivity.

Abstract translation: 低电压APD设置在在PIC芯片的硅器件层内横向延伸的波导的端部。 APD布置在共同位于波导端部的倒置反射镜上，以将光从波导的内部反射耦合到APD的下侧。 在示例性实施例中，通过晶体蚀刻在硅器件层中形成45°-55°刻面。 在实施例中，APD包括硅倍增层，乘法层上的锗吸收层以及设置在吸收层上的多个欧姆接触。 覆盖的光反射金属膜互连多个欧姆接触并将在欧姆接触周围传输的光返回到吸收层，以提高检测器响应度。

公开(公告)号：US20140231946A1

公开(公告)日：2014-08-21

申请号：US13695553

申请日：2011-11-02

Applicant: Yimin Kang ,  Zhihong Connie Huang ,  Han-Din Dean Liu ,  Yuval Saado ,  Yun-Chung Neil Na

Inventor： Yimin Kang ,  Zhihong Connie Huang ,  Han-Din Dean Liu ,  Yuval Saado ,  Yun-Chung Neil Na

IPC: H01L31/0232 ,  H01L31/028 ,  H01L31/107

CPC classification number: H01L31/02327 ,  H01L31/028 ,  H01L31/107

Abstract: Devices comprised of end-on waveguide-coupled photodetectors are described. in embodiments of the invention, the pbotodetectors are avalanche photodiodes coupled end-on to a waveguide. The waveguide comprises an insulating trench proximate to the coupled photodetector. In embodiments of the invention, the avalanche photodiodes are silicin/germanium avalanche photodiodes.

Abstract translation: 描述了由末端波导耦合光电探测器组成的器件。 在本发明的实施例中，pbotodetectors是连接到波导上的雪崩光电二极管。 波导包括靠近耦合的光电检测器的绝缘沟槽。 在本发明的实施方案中，雪崩光电二极管是硅/锗雪崩光电二极管。

公开(公告)号：US20080017883A1

公开(公告)日：2008-01-24

申请号：US11490994

申请日：2006-07-20

Applicant: Gadi Sarid ,  Yimin Kang ,  Alexandre Pauchard

Inventor： Gadi Sarid ,  Yimin Kang ,  Alexandre Pauchard

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L31/1075 ,  H01L31/028 ,  H01L31/035281 ,  Y02E10/547

Abstract: An avalanche photodetector is disclosed. An apparatus according to aspects of the present invention includes a mesa structure defined in a first type of semiconductor. The first type of semiconductor material includes an absorption region optically coupled to receive and absorb an optical beam. The apparatus also includes a planar region proximate to and separate from the mesa structure and defined in a second type of semiconductor material. The planar region includes a multiplication region including a p doped region adjoining an n doped region to create a high electric field in the multiplication region. The high electric field is to multiply charge carriers photo-generated in response to the absorption of the optical beam received in the mesa structure.

Abstract translation: 公开了一种雪崩光电探测器。 根据本发明的方面的装置包括在第一类型的半导体中限定的台面结构。 第一类型的半导体材料包括光学耦合以接收和吸收光束的吸收区域。 该装置还包括靠近并与台面结构分离并且在第二类型的半导体材料中限定的平面区域。 平面区域包括包括邻接n掺杂区域的p掺杂区域的乘法区域，以在乘法区域中产生高电场。 高电场是对接收在台面结构中的光束的吸收进行响应而产生的电荷载流子。