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公开(公告)号：US20050207071A1
公开(公告)日：2005-09-22
申请号：US11076451
申请日：2005-03-09
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A magnetosensitive device is disclosed that includes a ferromagnetic tunnel junction formed of two ferromagnetic films and an insulating film sandwiched therebetween. The insulating film is an aluminum nitride film. The barrier height of the ferromagnetic tunnel junction is less than or equal to 0.4 eV.
摘要翻译： 公开了一种磁感器件，其包括由两个铁磁膜形成的铁磁隧道结和夹在其间的绝缘膜。 绝缘膜是氮化铝膜。 铁磁隧道结的势垒高度小于或等于0.4eV。
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12.发明授权Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device 失效铁磁隧道结，使用磁头的磁头，磁记录装置和磁记忆装置公开(公告)号：US07466526B2
公开(公告)日：2008-12-16
申请号：US11257397
申请日：2005-10-25
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909
摘要： A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
摘要翻译： 公开了铁磁隧道结。 铁磁隧道结包括钉扎磁性层，形成在钉扎磁性层上的隧道绝缘膜，以及形成在隧道绝缘膜上的自由磁性多层体。 自由磁性多层体包括在隧道绝缘膜上依次堆叠的第一自由磁性层，扩散阻挡层和第二自由磁性层。 第一自由磁性层和第二自由磁性层彼此铁磁耦合。 扩散阻挡层抑制包含在第一自由磁性层中的添加元素扩散到第二自由磁性层中。
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公开(公告)号：US20070241410A1
公开(公告)日：2007-10-18
申请号：US11528367
申请日：2006-09-28
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228 , H01L43/12
摘要： The magnetic memory device includes a magnetic shield film 48, and a magnetoresistive effect element 62 formed over the magnetic shield film 48 and including a magnetic layer 52, a non-magnetic layer 54 and a magnetic layer 56, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield film 68 formed over the side wall of the magnetoresistive effect element 62. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect element 62 can be effectively prevented.
摘要翻译： 磁存储器件包括磁屏蔽膜48和形成在磁屏蔽膜48上并包括磁性层52，非磁性层54和磁性层56的磁阻效应元件62，其中磁屏蔽膜48的磁化方向 第一磁性层或第二磁性层通过自旋注入反转，以及形成在磁阻效应元件62的侧壁上的第二磁屏蔽膜68。 因此，可以有效地防止来自磁阻效应元件62附近的布线的泄漏磁场的到达。
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公开(公告)号：US07535755B2
公开(公告)日：2009-05-19
申请号：US11528367
申请日：2006-09-28
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228 , H01L43/12
摘要： The magnetic memory device includes a magnetic shield film 48, and a magnetoresistive effect element 62 formed over the magnetic shield film 48 and including a magnetic layer 52, a non-magnetic layer 54 and a magnetic layer 56, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield film 68 formed over the side wall of the magnetoresistive effect element 62. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect element 62 can be effectively prevented.
摘要翻译： 磁存储器件包括磁屏蔽膜48和形成在磁屏蔽膜48上并包括磁性层52，非磁性层54和磁性层56的磁阻效应元件62，其中磁屏蔽膜48的磁化方向 第一磁性层或第二磁性层通过自旋注入反转，以及形成在磁阻效应元件62的侧壁上的第二磁屏蔽膜68.因此，来自磁阻效应元件附近的互连的泄漏磁场的到达 62可以有效地防止。
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公开(公告)号：US07382643B2
公开(公告)日：2008-06-03
申请号：US11338889
申请日：2006-01-25
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The magnetoresistive effect element comprises a pinned magnetic layer 16 having a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layer 18 formed on the pinned magnetic layer 16, a free magnetic layer 20 formed on the nonmagnetic spacer layer 18 and formed of a single ferromagnetic layer, a nonmagnetic spacer layer 22 formed on the free magnetic layer 20, and a pinned magnetic layer 24 of a multilayered SAF structure formed on the nonmagnetic spacer layer 22, wherein a magnetization direction of the ferromagnetic layer 16c of the pinned magnetic layer 16, which is nearest the free magnetic layer 20, and a magnetization direction of the ferromagnetic layer 24a of the pinned magnetic layer 24, which is nearest the free magnetic layer 20, are opposite to each other.
摘要翻译： 磁阻效应元件包括具有多层合成反铁磁体（SAF）结构的钉扎磁性层16，形成在钉扎磁性层16上的非磁性间隔层18，形成在非磁性间隔层18上并由单个 铁磁层，形成在自由磁性层20上的非磁性间隔层22和形成在非磁性间隔层22上的多层SAF结构的钉扎磁性层24，其中被钉扎的磁性层的铁磁层16c的磁化方向 最靠近自由磁性层20的磁性层24的磁化方向与最靠近自由磁性层20的被钉扎磁性层24的磁化方向相反。
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公开(公告)号：US20070076469A1
公开(公告)日：2007-04-05
申请号：US11338889
申请日：2006-01-25
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The magnetoresistive effect element comprises a pinned magnetic layer 16 having a multilayered synthetic antiferromagnet (SAF) structure, a nonmagnetic spacer layer 18 formed on the pinned magnetic layer 16, a free magnetic layer 20 formed on the nonmagnetic spacer layer 18 and formed of a single ferromagnetic layer, a nonmagnetic spacer layer 22 formed on the free magnetic layer 20, and a pinned magnetic layer 24 of a multilayered SAF structure formed on the nonmagnetic spacer layer 22, wherein a magnetization direction of the ferromagnetic layer 16c of the pinned magnetic layer 16, which is nearest the free magnetic layer 20, and a magnetization direction of the ferromagnetic layer 24a of the pinned magnetic layer 24, which is nearest the free magnetic layer 20, are opposite to each other.
摘要翻译： 磁阻效应元件包括具有多层合成反铁磁体（SAF）结构的钉扎磁性层16，形成在钉扎磁性层16上的非磁性间隔层18，形成在非磁性间隔层18上并由单个 铁磁层，形成在自由磁性层20上的非磁性间隔层22和形成在非磁性间隔层22上的多层SAF结构的钉扎磁性层24，其中被钉扎的磁性层的铁磁层16c的磁化方向 最靠近自由磁性层20的磁性层24的磁化方向与最靠近自由磁性层20的被钉扎磁性层24的磁化方向相反。
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17.发明申请Ferromagnetic tunnel junction, magnetic head using the same, magnetic recording device, and magnetic memory device 失效铁磁隧道结，使用磁头的磁头，磁记录装置和磁记忆装置公开(公告)号：US20060256484A1
公开(公告)日：2006-11-16
申请号：US11257397
申请日：2005-10-25
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909
摘要： A ferromagnetic tunnel junction is disclosed. The ferromagnetic tunnel junction includes a pinned magnetic layer, a tunnel insulating film formed on the pinned magnetic layer, and a free magnetic multilayer body formed on the tunnel insulating film. The free magnetic multilayer body includes a first free magnetic layer, a diffusion barrier layer, and a second free magnetic layer stacked in this order on the tunnel insulating film. The first free magnetic layer and the second free magnetic layer are ferromagnetically coupled with each other. The diffusion barrier layer inhibits the additive element contained in the first free magnetic layer from diffusing into the second free magnetic layer.
摘要翻译： 公开了铁磁隧道结。 铁磁隧道结包括钉扎磁性层，形成在钉扎磁性层上的隧道绝缘膜，以及形成在隧道绝缘膜上的自由磁性多层体。 自由磁性多层体包括在隧道绝缘膜上依次堆叠的第一自由磁性层，扩散阻挡层和第二自由磁性层。 第一自由磁性层和第二自由磁性层彼此铁磁耦合。 扩散阻挡层抑制包含在第一自由磁性层中的添加元素扩散到第二自由磁性层中。
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公开(公告)号：US20060220084A1
公开(公告)日：2006-10-05
申请号：US11167279
申请日：2005-06-28
IPC分类号： H01L29/94
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228 , H01L43/08
摘要： The magnetoresistive effect element comprises a first ferromagnetic layer 50, a nonmagnetic layer 52 formed on the first ferromagnetic layer 50, a second ferromagnetic layer 54 formed on the nonmagnetic layer 52, and a sidewall insulating film 64 formed on the side wall of the second ferromagnetic layer 54. The end of the first ferromagnetic layer 50 is aligned with the end of the sidewall insulating film 64. Whereby the disalignment between the first ferromagnetic layer and the second ferromagnetic layer can be prevented.
摘要翻译： 磁阻效应元件包括第一铁磁层50，形成在第一铁磁层50上的非磁性层52，形成在非磁性层52上的第二铁磁层54和形成在第二铁磁层50的侧壁上的侧壁绝缘膜64 第一铁磁层50的端部与侧壁绝缘膜64的端部对准。由此可以防止第一铁磁层与第二铁磁层之间的不对准。
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公开(公告)号：US5985471A
公开(公告)日：1999-11-16
申请号：US800185
申请日：1997-02-13
申请人： Masashige Sato , Atsushi Tanaka , Kazuo Kobayashi
发明人： Masashige Sato , Atsushi Tanaka , Kazuo Kobayashi
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C13/06 , G11B2005/3996 , G11B5/3932 , Y10S428/90 , Y10T428/1121 , Y10T428/1171
摘要： The magnetic sensor comprise a multi-layer structure 10 including a ferromagnetic layer 12 of FeCo alloy, an insulation layer 14 of Al.sub.2 O.sub.3 and a compound semiconductor layer 16 of GaAs. Circularly polarized light is irradiated to the compound semiconductor layer 16 to generate electrons. A dc voltage is applied to the ferromagnetic layer 12 and the compound semiconductor layer 16 by a dc power source 20 while circularly polarized light is irradiated to the compound semiconductor layer 16. When a direction of an external magnetic field changes, a magnetization direction of the ferromagnetic layer 12 accordingly changes, and a magnetoresistance between the ferromagnetic layer 12 and the compound semiconductor layer 16 changes. Changes of the magnetoresistance are measured by a voltmeter 22.
摘要翻译： 磁传感器包括多层结构10，其包括FeCo合金的铁磁层12，Al 2 O 3的绝缘层14和GaAs的化合物半导体层16。 圆偏振光被照射到化合物半导体层16以产生电子。 直流电压通过直流电源20施加到铁磁层12和化合物半导体层16，同时向化合物半导体层16照射圆偏振光。当外部磁场的方向改变时，磁化方向 铁磁层12相应地变化，并且铁磁层12与化合物半导体层16之间的磁阻发生变化。 通过电压表22测量磁阻的变化。
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20.发明申请Manufacturing method of tunnel magnetoresistance element and manufacturing method of nonvolatile memory device 审中-公开隧道磁阻元件的制造方法和非易失性存储器件的制造方法公开(公告)号：US20070277910A1
公开(公告)日：2007-12-06
申请号：US11606164
申请日：2006-11-30
IPC分类号： H01F41/22
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/3272 , H01F41/304
摘要： An electrode, an antiferromagnetic film, a ferromagnetic film, a nonmagnetic film, a ferromagnetic film, a tunnel insulating film, a ferromagnetic film, a first Ta film, a Ru film, and a second Ta film are formed in sequence on a substrate. The thickness of the second Ta film is about 0.5 nm. The second Ta film is naturally oxidized after being formed. Then, heat treatment to improve the characteristic of a TMR film is performed. The temperature of this heat treatment is approximately from 200° C. to 300° C. In a conventional manufacturing method, film peeling occurs in this heat treatment, and accompanying this, defects such as occurrence of holes and wrinkles further occur, but in the present method, such an occurrence of defects is prevented since the Ta film is formed at the uppermost surface. Subsequently, the Ta film and so on are patterned.
摘要翻译： 在基板上依次形成电极，反铁磁膜，铁磁膜，非磁性膜，铁磁膜，隧道绝缘膜，铁磁膜，第一Ta膜，Ru膜和第二Ta膜。 第二Ta膜的厚度为约0.5nm。 第二个Ta膜在形成后被自然氧化。 然后，进行热处理以提高TMR膜的特性。 该热处理的温度约为200℃〜300℃。在以往的制造方法中，在该热处理中发生膜剥离，伴随此，进一步发生孔和褶皱等的缺陷， 由于在最上表面形成Ta膜，因此防止了这种缺陷的发生。 随后，对Ta膜等进行图案化。
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