摘要:
In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.
摘要:
In some examples, a system comprising a data storage member including a magnetic storage medium, the magnetic storage medium having a plurality of magnetic bit domains aligned on at least one data track, where a transition boundary between respective magnetic bit domains defines a transition curvature. The system may further comprise a magnetic read head including a first shield layer, a second shield layer, and a read sensor stack provided proximate to the first and second shield layers, where the magnetic read head senses a magnetic field of each of the plurality of magnetic bit domains according to a read playback sensitivity function. In some examples, the shield layers and read sensor stack may be configured to provide a reader playback sensitivity function that substantially corresponds to the shape of the respective magnetic bit domains.
摘要:
A magnetic sensor assembly including first and second shields, and a sensor stack between the first and second shields. The sensor stack includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer, wherein at least one of the seed layer and the cap layer has a synthetic antiferromagnetic structure.
摘要:
A method includes: constructing a multilayer structure including a first layer of Pt, a first layer of A1 phase FePt on the first layer of Pt, and a second layer of Pt on the layer of FePt, and annealing the multilayer structure to convert the A1 phase FePt to L1o phase FePt.
摘要:
A hard magnet may include a seed layer including a first component including at least one of a Pt-group metal, Fe, Mn, and Co, a cap layer comprising the first component, and a multilayer stack between the seed layer and the cap layer. In some embodiments, the multilayer stack may include a first layer of including the first component and a second component including at least one of a Pt-group metal, Fe, Mn, and Co, where the second component is different than the first component. The multilayer stack may further include a second layer formed over the first layer and including the second component, and a third layer formed over the second layer and including the first component and the second component.
摘要:
A multilayer structure and method for making the same. In accordance with some embodiments, a multilayer structure has a first layer of Fe, a layer of A1 phase FePt on the first layer of Fe, and a second layer o Fe on the layer of FePt. The multilayer structure is annealed to convert the A1 phase FePt to L1o phase FePt.
摘要:
A hard magnet may include a seed layer including a first component including at least one of a Pt-group metal, Fe, Mn, Ir, and Co, a cap layer comprising the first component, and a multilayer stack between the seed layer and the cap layer. In some embodiments, the multilayer stack may include a first layer of including the first component and a second component including at least one of a Pt-group metal, Fe, Mn, Ir, and Co, where the second component is different than the first component. The multilayer stack may further include a second layer formed over the first layer and including the second component, and a third layer formed over the second layer and including the first component and the second component.
摘要:
A magnetic sensor assembly including first and second shields, and a sensor stack between the first and second shields. The sensor stack includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer, wherein at least one of the seed layer and the cap layer has a synthetic antiferromagnetic structure.
摘要:
A method includes: constructing a multilayer structure including a first layer of Pt, a first layer of A1 phase FePt on the first layer of Pt, and a second layer of Pt on the layer of FePt, and annealing the multilayer structure to convert the A1 phase FePt to L10 phase FePt.
摘要:
A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.