公开(公告)号：US20080246073A1

公开(公告)日：2008-10-09

申请号：US12138712

申请日：2008-06-13

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jong-Sun Sel

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jong-Sun Sel

IPC分类号： H01L29/00

CPC分类号： H01L27/105 ,  B82Y10/00 ,  H01L21/823462 ,  H01L27/0629 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568

摘要： Methods of forming a memory device include forming a device isolation layer in a semiconductor substrate including a cell array region and a resistor region, the device isolation layer extending into the resistor region and defining an active region in the semiconductor substrate. A first conductive layer is formed on the device isolation layer in the resistor region. The semiconductor substrate is exposed in the cell array region. A cell insulation layer is formed on a portion of the semiconductor substrate including the exposed cell array region, the active region and the device isolation layer in the resistor region. A second conductive layer is formed on the cell insulation layer in the portion of the semiconductor substrate including the exposed cell array region, the active region and the device isolation layer in the resistor region. The second conductive layer is etched to form a cell gate electrode in the cell array region and to concurrently remove the second conductive layer from the resistor region and the first conductive layer is etched in the resistor region to form a resistor.

摘要翻译： 形成存储器件的方法包括在包括单元阵列区域和电阻器区域的半导体衬底中形成器件隔离层，器件隔离层延伸到电阻器区域中并在半导体衬底中限定有源区域。 在电阻器区域中的器件隔离层上形成第一导电层。 半导体衬底暴露在电池阵列区域中。 电池绝缘层形成在包括电阻器区域中的暴露的电池阵列区域，有源区域和器件隔离层的半导体衬底的一部分上。 在半导体衬底的包括电阻器区域中的暴露的电池阵列区域，有源区域和器件隔离层的部分中的单元绝缘层上形成第二导电层。 蚀刻第二导电层以在电池阵列区域中形成电池栅电极，并且同时从电阻器区域去除第二导电层，并且在电阻器区域中蚀刻第一导电层以形成电阻器。

公开(公告)号：US07109566B2

公开(公告)日：2006-09-19

申请号：US10675336

申请日：2003-09-29

申请人： Yoo-Cheol Shin

发明人： Yoo-Cheol Shin

IPC分类号： H01L29/00

CPC分类号： H01L28/20 ,  H01L27/0629 ,  H01L27/10897 ,  H01L27/115 ,  H01L27/11531 ,  H01L27/11568 ,  Y10S257/904

摘要： Disclosed is a semiconductor device with a resistor pattern and methods of fabricating the same. Embodiments of the present invention provide a method of fabricating a resistor pattern having high sheet resistance by using a polycide layer for a gate electrode in a semiconductor device with the resistor pattern. Embodiments of the invention also provide a semiconductor device with a resistor pattern that is formed narrower than the minimum line width that can be defined in a photolithographic process so that sheet resistance thereof increases, and a method of fabricating the same.

摘要翻译： 公开了具有电阻图案的半导体器件及其制造方法。 本发明的实施例提供一种通过在具有电阻图案的半导体器件中使用用于栅电极的多晶硅化层来制造具有高薄层电阻的电阻器图案的方法。 本发明的实施例还提供了一种半导体器件，其具有比可以在光刻工艺中限定的最小线宽窄的电阻器图案，使得其电阻值增加，并且其制造方法。

公开(公告)号：US20110090738A1

公开(公告)日：2011-04-21

申请号：US12977419

申请日：2010-12-23

申请人： Ki-Tae Park ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Yoo-Cheol Shin

发明人： Ki-Tae Park ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Yoo-Cheol Shin

IPC分类号： G11C16/12

CPC分类号： G11C16/0483 ,  G11C16/107 ,  G11C16/12 ,  G11C16/3445

摘要： A NAND flash memory device includes a control circuit configured to apply, during a program operation, a first word line voltage to non-selected ones of a plurality of serially-connected memory cells, a second word line voltage greater than the first word line voltage to a selected one of the plurality of memory cells, and a third word line voltage lower than the first word line voltage to a dummy memory cell connected in series with the plurality of memory cells. In other embodiments, a control circuit is configured to program a dummy memory cell before and/or after each erase operation on a plurality of memory cells connected in series therewith. In still other embodiments, a control circuit is configured to forego erasure of a dummy memory cell while erasing a plurality of memory cells connected in series therewith.

摘要翻译： NAND闪速存储器件包括控制电路，其被配置为在编程操作期间将第一字线电压施加到多个串联存储器单元中的未选择的电压，第二字线电压大于第一字线电压 到多个存储单元中的一个选择的一个，以及比第一字线电压低的第三字线电压到与多个存储单元串联连接的虚拟存储单元。 在其他实施例中，控制电路被配置为在与每个擦除操作之间的每个擦除操作之前和/或之后对与其串联的多个存储器单元进行编程。 在其他实施例中，控制电路被配置为在擦除与其串联连接的多个存储器单元时，放弃擦除伪存储器单元。

公开(公告)号：US07863686B2

公开(公告)日：2011-01-04

申请号：US12536740

申请日：2009-08-06

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jong-Sun Sel

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jong-Sun Sel

IPC分类号： H01L29/66

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： A nonvolatile memory device includes a semiconductor substrate and a device isolation layer on the semiconductor substrate. A fin-shaped active region is formed between portions of the device isolation layer. A sidewall protection layer is formed on the sidewall of the fin-shaped active region where source and drain regions are formed. Thus, it may be possible to reduce the likelihood of an undesirable connection between an interconnection layer connected to the source and drain regions and a lower sidewall of the active region so that charge leakage from the interconnection layer to a substrate can be prevented or reduced. The sidewall protection layer may be formed using the device isolation layer. Alternatively, an insulating layer having an etch selectivity with respect to an interlayer insulating layer may be formed on the device isolation layer so as to cover the sidewall of the active region.

摘要翻译： 非易失性存储器件包括半导体衬底和半导体衬底上的器件隔离层。 翅片形有源区形成在器件隔离层的各部分之间。 侧壁保护层形成在形成源区和漏区的鳍状有源区的侧壁上。 因此，可以降低连接到源极和漏极区域的互连层和有源区域的下侧壁之间的不期望的连接的可能性，从而可以防止或减少从互连层到衬底的电荷泄漏。 侧壁保护层可以使用器件隔离层形成。 或者，可以在器件隔离层上形成具有相对于层间绝缘层的蚀刻选择性的绝缘层，以覆盖有源区的侧壁。

公开(公告)号：US20100301425A1

公开(公告)日：2010-12-02

申请号：US12856295

申请日：2010-08-13

申请人： Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Ju-Hyung Kim ,  Sang-Hun Jeon

发明人： Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Ju-Hyung Kim ,  Sang-Hun Jeon

IPC分类号： H01L27/088 ,  H01L29/78

CPC分类号： H01L27/11521 ,  H01L21/823462 ,  H01L21/823475 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/7883

摘要： A semiconductor device has a gate contact structure, including a semiconductor substrate, a polycrystalline silicon layer used as a gate electrode of a transistor, a middle conductive layer, a top metal layer having an opening exposing the polycrystalline silicon layer, and a contact plug directly contacting the polycrystalline silicon layer through the opening.

摘要翻译： 半导体器件具有栅极接触结构，包括半导体衬底，用作晶体管的栅电极的多晶硅层，中间导电层，具有暴露多晶硅层的开口的顶部金属层和直接接触的接触插塞 使多晶硅层通过开口接触。

公开(公告)号：US07772654B2

公开(公告)日：2010-08-10

申请号：US11390662

申请日：2006-03-28

申请人： Yoo-Cheol Shin ,  Jung-Dal Choi

发明人： Yoo-Cheol Shin ,  Jung-Dal Choi

IPC分类号： H01L27/088

CPC分类号： H01L27/115 ,  H01L27/11568

摘要： Nonvolatile memory devices and methods of fabricating the same are provided. A semiconductor substrate is provided having a cell field region and a high-voltage field region. Device isolation films are provided on the substrate. The device isolation films define active regions of the substrate. A cell gate-insulation film and a cell gate-conductive film are provided on the cell field region of the substrate including the device isolation films. A high-voltage gate-insulation film and a high-voltage gate-conductive film are provided on the high-voltage field region of the substrate including the device isolation films. The device isolation film on the high-voltage field region of the substrate is at least partially recessed to provide a groove therein.

摘要翻译： 提供非易失性存储器件及其制造方法。 提供具有单元场区域和高电压场区域的半导体基板。 器件隔离膜设置在衬底上。 器件隔离膜定义衬底的有源区。 在包括器件隔离膜的衬底的电池区域上设置电池栅极绝缘膜和电池栅极导电膜。 在包括器件隔离膜的衬底的高压场区域上设置高压栅极绝缘膜和高压栅极导电膜。 衬底的高电压场区域上的器件隔离膜至少部分地凹入以在其中提供沟槽。

公开(公告)号：US20090294837A1

公开(公告)日：2009-12-03

申请号：US12536740

申请日：2009-08-06

申请人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jong-Sun Sel

发明人： Chang-Hyun Lee ,  Jung-Dal Choi ,  Chang-Seok Kang ,  Yoo-Cheol Shin ,  Jong-Sun Sel

IPC分类号： H01L29/792 ,  H01L29/78

CPC分类号： H01L27/115 ,  H01L27/11521

摘要： A nonvolatile memory device includes a semiconductor substrate and a device isolation layer on the semiconductor substrate. A fin-shaped active region is formed between portions of the device isolation layer. A sidewall protection layer is formed on the sidewall of the fin-shaped active region where source and drain regions are formed. Thus, it may be possible to reduce the likelihood of an undesirable connection between an interconnection layer connected to the source and drain regions and a lower sidewall of the active region so that charge leakage from the interconnection layer to a substrate can be prevented or reduced. The sidewall protection layer may be formed using the device isolation layer. Alternatively, an insulating layer having an etch selectivity with respect to an interlayer insulating layer may be formed on the device isolation layer so as to cover the sidewall of the active region.

摘要翻译： 非易失性存储器件包括半导体衬底和半导体衬底上的器件隔离层。 翅片形有源区形成在器件隔离层的各部分之间。 侧壁保护层形成在形成源区和漏区的鳍状有源区的侧壁上。 因此，可以降低连接到源极和漏极区域的互连层和有源区域的下侧壁之间的不期望的连接的可能性，从而可以防止或减少从互连层到衬底的电荷泄漏。 侧壁保护层可以使用器件隔离层形成。 或者，可以在器件隔离层上形成具有相对于层间绝缘层的蚀刻选择性的绝缘层，以覆盖有源区的侧壁。

公开(公告)号：US07480178B2

公开(公告)日：2009-01-20

申请号：US11279607

申请日：2006-04-13

申请人： Ki-Tae Park ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Yoo-Cheol Shin

发明人： Ki-Tae Park ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Yoo-Cheol Shin

IPC分类号： G11C16/06

CPC分类号： G11C16/0483 ,  G11C16/107 ,  G11C16/12 ,  G11C16/3445

摘要： A NAND flash memory device includes a control circuit configured to apply, during a program operation, a first word line voltage to non-selected ones of a plurality of serially-connected memory cells, a second word line voltage greater than the first word line voltage to a selected one of the plurality of memory cells, and a third word line voltage lower than the first word line voltage to a dummy memory cell connected in series with the plurality of memory cells. In other embodiments, a control circuit is configured to program a dummy memory cell before and/or after each erase operation on a plurality of memory cells connected in series therewith. In still other embodiments, a control circuit is configured to forego erasure of a dummy memory cell while erasing a plurality of memory cells connected in series therewith.

摘要翻译： NAND闪速存储器件包括控制电路，其被配置为在编程操作期间将第一字线电压施加到多个串联存储器单元中的未选择的电压，第二字线电压大于第一字线电压 到多个存储单元中的一个选择的一个，以及比第一字线电压低的第三字线电压到与多个存储单元串联连接的虚拟存储单元。 在其他实施例中，控制电路被配置为在与每个擦除操作之间的每个擦除操作之前和/或之后对与其串联的多个存储器单元进行编程。 在其他实施例中，控制电路被配置为在擦除与其串联连接的多个存储器单元时，放弃擦除伪存储器单元。

公开(公告)号：US06326270B1

公开(公告)日：2001-12-04

申请号：US09419836

申请日：1999-10-15

申请人： Kang-Yoon Lee ,  Woo-Tag Kang ,  Jeong-Seok Kim ,  Yoo-Cheol Shin

发明人： Kang-Yoon Lee ,  Woo-Tag Kang ,  Jeong-Seok Kim ,  Yoo-Cheol Shin

IPC分类号： H01L21336

CPC分类号： H01L21/76816 ,  H01L21/76805 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894 ,  H01L27/10897

摘要： Methods of forming integrated circuit memory devices may include steps to form memory cell access transistors therein. These steps may include steps to form a gate line on a semiconductor substrate and then implant dopants of first conductivity type into the semiconductor substrate to define a self-aligned impurity region therein. A spacer layer of a first material is then formed on a sidewall and upper surface of the gate line. An interlayer insulating layer of a second material is then formed on the spacer layer. A series of selective etching steps are then performed using different etchants. For example, a step is performed to selectively etch the interlayer insulating layer to define a contact hole therein, using the spacer layer as an etching mask to protect the gate line from etching damage. A selective etching step is then performed to convert the spacer layer into a sidewall spacer on the sidewall of the gate line. This etching step is performed using the interlayer insulating layer as an etching mask. A conductive plug (e.g., bit line plug) is then formed in the contact hole. This conductive plug forms an ohmic contact with the impurity region.

摘要翻译： 形成集成电路存储器件的方法可以包括在其中形成存储单元存取晶体管的步骤。 这些步骤可以包括在半导体衬底上形成栅极线，然后将第一导电类型的掺杂剂注入到半导体衬底中以限定其中的自对准杂质区的步骤。 然后在栅极线的侧壁和上表面上形成第一材料的间隔层。 然后在间隔层上形成第二材料的层间绝缘层。 然后使用不同的蚀刻剂执行一系列选择性蚀刻步骤。 例如，使用间隔层作为蚀刻掩模来执行步骤以选择性地蚀刻层间绝缘层以限定其中的接触孔，以保护栅极线免受蚀刻损伤。 然后执行选择性蚀刻步骤以将间隔层转换成栅极线的侧壁上的侧壁间隔物。 该蚀刻步骤使用层间绝缘层作为蚀刻掩模进行。 然后在接触孔中形成导电插塞（例如，位线插头）。 该导电插塞与杂质区形成欧姆接触。

公开(公告)号：US08228738B2

公开(公告)日：2012-07-24

申请号：US12977419

申请日：2010-12-23

申请人： Ki-Tae Park ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Yoo-Cheol Shin

发明人： Ki-Tae Park ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Yoo-Cheol Shin

IPC分类号： G11C16/04 ,  G11C16/06 ,  G11C16/10

CPC分类号： G11C16/0483 ,  G11C16/107 ,  G11C16/12 ,  G11C16/3445

摘要： A NAND flash memory device includes a control circuit configured to apply, during a program operation, a first word line voltage to non-selected ones of a plurality of serially-connected memory cells, a second word line voltage greater than the first word line voltage to a selected one of the plurality of memory cells, and a third word line voltage lower than the first word line voltage to a dummy memory cell connected in series with the plurality of memory cells. In other embodiments, a control circuit is configured to program a dummy memory cell before and/or after each erase operation on a plurality of memory cells connected in series therewith. In still other embodiments, a control circuit is configured to forego erasure of a dummy memory cell while erasing a plurality of memory cells connected in series therewith.

摘要翻译： NAND闪速存储器件包括控制电路，其被配置为在编程操作期间将第一字线电压施加到多个串联存储器单元中的未选择的电压，第二字线电压大于第一字线电压 到多个存储单元中的一个选择的一个，以及比第一字线电压低的第三字线电压到与多个存储单元串联连接的虚拟存储单元。 在其他实施例中，控制电路被配置为在与每个擦除操作之间的每个擦除操作之前和/或之后对与其串联的多个存储器单元进行编程。 在其他实施例中，控制电路被配置为在擦除与其串联连接的多个存储器单元时，放弃擦除伪存储器单元。