公开(公告)号：US06569514B2

公开(公告)日：2003-05-27

申请号：US09957040

申请日：2001-09-21

申请人： Takayuki Naba ,  Haruhiko Yamaguchi

发明人： Takayuki Naba ,  Haruhiko Yamaguchi

IPC分类号： B32B300

CPC分类号： H01L23/15 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/381 ,  Y10T428/12472 ,  Y10T428/12993 ,  Y10T428/24926 ,  H01L2924/00

摘要： The present invention provides a ceramic circuit board comprising: a ceramic substrate and a metal circuit portion bonded to at least one main surface of the ceramic substrate; wherein each of ratios of Ra1/Ra2 and Ra2/Ra1 is 1.5 or less in which a surface roughness in terms of arithmetical average surface roughness Ra in arbitral one direction of the ceramic substrate is Ra1 while a surface roughness Ra in a direction normal to the one direction of the ceramic substrate is Ra2, and a breakdown voltage of the ceramic substrate is 20 kV/mm or more. According to the above structure of the present invention, there can be provided a ceramic circuit board having an excellent heat-cycle resistance and bending strength characteristics without impairing a heat radiating property, and capable of increasing an operating reliability as electronic device.

公开(公告)号：US08791566B2

公开(公告)日：2014-07-29

申请号：US13259222

申请日：2010-02-05

申请人： Haruhiko Yamaguchi ,  Yoshiyuki Fukuda

发明人： Haruhiko Yamaguchi ,  Yoshiyuki Fukuda

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C04B35/581 ,  H01L23/15 ,  C04B37/02 ,  H05K1/03

CPC分类号： C04B35/581 ,  C04B37/026 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/764 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/963 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/127 ,  C04B2237/366 ,  C04B2237/408 ,  C04B2237/706 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/13055 ,  H05K1/0306 ,  H01L2924/00

摘要： The present invention provides an aluminum nitride substrate and an aluminum nitride circuit board having excellent insulation characteristics and heat dissipation properties and having high strength, a semiconductor apparatus, and a method for manufacturing an aluminum nitride substrate.An aluminum nitride substrate according to the present invention is an aluminum nitride substrate having aluminum nitride as a main component and comprising a polycrystal containing a plurality of aluminum nitride grains, and complex oxide grains being present at grain boundaries of the aluminum nitride grains and including a rare earth element and aluminum, wherein the aluminum nitride grains have a maximum grain size of 10 μm or less, the complex oxide grains have a maximum grain size smaller than the maximum grain size of the aluminum nitride grains, the number of the complex oxide grains having a grain size of 1 μm or more being present in a field of view of 100 μm×100 μm of a surface of the aluminum nitride substrate observed is 40 or more, the aluminum nitride substrate has a bending strength of 400 MPa or more in an unpolished state after firing, and the aluminum nitride substrate has a volume resistivity of 1012 Ωm or more.

摘要翻译： 本发明提供一种氮化铝衬底和具有优异的绝缘特性和散热性能并且具有高强度的氮化铝电路板，半导体装置和用于制造氮化铝衬底的方法。 本发明的氮化铝衬底是具有氮化铝作为主要成分的氮化铝衬底，包括含有多个氮化铝颗粒的多晶体，复合氧化物晶粒存在于氮化铝晶粒的晶界处，并且包括 稀土元素和铝，其中，氮化铝粒子的最大粒径为10μm以下，复合氧化物粒子的最大粒径比氮化铝粒子的最大粒径小，复合氧化物粒子数 在观察到的氮化铝衬底的表面的100μm×100μm的视野内存在1μm以上的粒径为40以上，氮化铝衬底的弯曲强度为400MPa以上 烧成后的未抛光状态，氮化铝衬底的体积电阻率为1012Ω·cm以上。

公开(公告)号：US20120038038A1

公开(公告)日：2012-02-16

申请号：US13259222

申请日：2010-02-05

申请人： Haruhiko Yamaguchi ,  Yoshiyuki Fukuda

发明人： Haruhiko Yamaguchi ,  Yoshiyuki Fukuda

IPC分类号： H01L23/15 ,  C04B35/50 ,  C04B35/64 ,  H05K1/05

CPC分类号： C04B35/581 ,  C04B37/026 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/764 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2235/963 ,  C04B2237/125 ,  C04B2237/126 ,  C04B2237/127 ,  C04B2237/366 ,  C04B2237/408 ,  C04B2237/706 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/13055 ,  H05K1/0306 ,  H01L2924/00

摘要： The present invention provides an aluminum nitride substrate and an aluminum nitride circuit board having excellent insulation characteristics and heat dissipation properties and having high strength, a semiconductor apparatus, and a method for manufacturing an aluminum nitride substrate.An aluminum nitride substrate according to the present invention is an aluminum nitride substrate having aluminum nitride as a main component and comprising a polycrystal containing a plurality of aluminum nitride grains, and complex oxide grains being present at grain boundaries of the aluminum nitride grains and including a rare earth element and aluminum, wherein the aluminum nitride grains have a maximum grain size of 10 μm or less, the complex oxide grains have a maximum grain size smaller than the maximum grain size of the aluminum nitride grains, the number of the complex oxide grains having a grain size of 1 μm or more being present in a field of view of 100 μm×100 μm of a surface of the aluminum nitride substrate observed is 40 or more, the aluminum nitride substrate has a bending strength of 400 MPa or more in an unpolished state after firing, and the aluminum nitride substrate has a volume resistivity of 1012 Ωm or more.

摘要翻译： 本发明提供一种氮化铝衬底和具有优异的绝缘特性和散热性能并且具有高强度的氮化铝电路板，半导体装置和用于制造氮化铝衬底的方法。 本发明的氮化铝衬底是具有氮化铝作为主要成分的氮化铝衬底，包括含有多个氮化铝颗粒的多晶体，复合氧化物晶粒存在于氮化铝晶粒的晶界处，并且包括 稀土元素和铝，其中，氮化铝粒子的最大粒径为10μm以下，复合氧化物粒子的最大粒径比氮化铝粒子的最大粒径小，复合氧化物粒子数 在观察到的氮化铝衬底的表面的100μm×100μm的视野内存在1μm以上的粒径为40以上，氮化铝衬底的弯曲强度为400MPa以上 烧成后的未抛光状态，氮化铝衬底的体积电阻率为1012Ω·cm以上。

公开(公告)号：US07625506B2

公开(公告)日：2009-12-01

申请号：US10528778

申请日：2003-09-18

申请人： Mamoru Usami ,  Junichi Ide ,  Haruhiko Yamaguchi ,  Tomoki Ushida

发明人： Mamoru Usami ,  Junichi Ide ,  Haruhiko Yamaguchi ,  Tomoki Ushida

IPC分类号： B29D17/00

CPC分类号： G11B7/26 ,  B26D7/1818 ,  B26F1/14 ,  B26F1/44 ,  B26F2001/4427 ,  B29C47/0019 ,  B29C47/003 ,  B29C47/0038 ,  B29C47/0066 ,  B29C47/025 ,  B29C47/065 ,  B29C47/92 ,  B29C69/001 ,  B29C2793/0018 ,  B29L2017/005

摘要： When manufacturing an optical recording medium by forming a resin layer on a surface of a substrate and then forming a center hole that passes through the substrate and the resin layer, a method of manufacturing an optical recording medium according to the present invention forms the center hole by forming, in the resin layer, a circular cut with a larger diameter than the center hole so as to surround a formation position of the center hole and then pressing in a punching blade for forming the center hole from a rear surface side of the substrate. By doing so, detachment of the resin layer and the production of burrs at or near the center hole can be avoided while reducing the manufacturing cost.

摘要翻译： 当通过在基板的表面上形成树脂层然后形成通过基板和树脂层的中心孔来制造光学记录介质时，根据本发明的制造光学记录介质的方法形成中心孔 通过在树脂层中形成具有比中心孔大的直径的圆形切口，以围绕中心孔的形成位置，然后从衬底的后表面侧的用于形成中心孔的冲压刀中挤压 。 通过这样做，可以避免树脂层的剥离和中心孔附近或附近产生毛刺，同时降低制造成本。

公开(公告)号：US20090284857A1

公开(公告)日：2009-11-19

申请号：US12467335

申请日：2009-05-18

申请人： Akio Ogawa ,  Tsutomu Chikamatsu ,  Kazuyuki Kobayashi ,  Haruhiko Yamaguchi ,  Kazunori Matsuiwa ,  Masaki Ohashi ,  Kazuyoshi Nakajima ,  Kiyotaka Shindo

发明人： Akio Ogawa ,  Tsutomu Chikamatsu ,  Kazuyuki Kobayashi ,  Haruhiko Yamaguchi ,  Kazunori Matsuiwa ,  Masaki Ohashi ,  Kazuyoshi Nakajima ,  Kiyotaka Shindo

IPC分类号： G11B27/36

CPC分类号： G11B5/455

摘要： The characteristics of thin-film magnetic heads are evaluated by measuring, in a step and repeat method and apparatus, the magnetic field generated by the respective heads in a bar including multiple heads.

摘要翻译： 通过在步骤和重复方法和装置中测量由包括多个头的棒中的各个头产生的磁场来评估薄膜磁头的特性。

公开(公告)号：US07096770B2

公开(公告)日：2006-08-29

申请号：US10762305

申请日：2004-01-23

申请人： Junichi Ide ,  Haruhiko Yamaguchi ,  Takeshi Umega ,  Futoshi Kobayashi ,  Tsuyoshi Itoh ,  Yoshimi Yodogawa ,  Mamoru Usami

发明人： Junichi Ide ,  Haruhiko Yamaguchi ,  Takeshi Umega ,  Futoshi Kobayashi ,  Tsuyoshi Itoh ,  Yoshimi Yodogawa ,  Mamoru Usami

IPC分类号： B26D5/08 ,  B26D7/01 ,  G11B7/26

CPC分类号： G11B7/265 ,  Y10S425/81 ,  Y10T83/0207 ,  Y10T83/2066 ,  Y10T83/9416 ,  Y10T83/9418 ,  Y10T83/97

摘要： There is provided an optical recording medium-manufacturing apparatus that is capable of accurately transferring a disk-shaped apparatus during a manufacturing process, and at the same time occupies a small installation area. A control section causes a cut-forming machine installed at a cut-forming location to form a cut in a resin layer of a disk-shaped substrate, then causes an indexing mechanism to rotate a transfer stage to thereby transfer the disk-shaped substrate formed with the cut to a central hole-forming location, and then causes a punching machine to punch a central hole.

摘要翻译： 提供了一种能够在制造过程中精确地传送盘形装置的同时具有小的安装面积的光学记录介质制造装置。 控制部分使得安装在切割位置处的切割成型机在盘形基板的树脂层中形成切口，然后使转印机构转动转印台，从而转印形成的盘状基板 切割成中心孔形成位置，然后使冲孔机冲孔中心孔。

公开(公告)号：US07270527B2

公开(公告)日：2007-09-18

申请号：US10762306

申请日：2004-01-23

申请人： Junichi Ide ,  Haruhiko Yamaguchi ,  Futoshi Kobayashi ,  Takeshi Umega ,  Tsuyoshi Itoh ,  Yoshimi Yodogawa ,  Mamoru Usami

发明人： Junichi Ide ,  Haruhiko Yamaguchi ,  Futoshi Kobayashi ,  Takeshi Umega ,  Tsuyoshi Itoh ,  Yoshimi Yodogawa ,  Mamoru Usami

IPC分类号： B29C67/00 ,  B29D17/00 ,  B26D5/08 ,  B26D7/01

CPC分类号： G11B7/26 ,  B26D7/018 ,  B26D7/086 ,  B26D7/1863 ,  B26F1/3846 ,  B26F1/40 ,  B26F2001/407 ,  B26F2001/4427 ,  Y10S425/81 ,  Y10T83/0581 ,  Y10T83/2066 ,  Y10T83/8776 ,  Y10T83/8832 ,  Y10T83/9418

摘要： There is provided an optical recording medium-manufacturing apparatus that is capable of avoiding breakage of a substrate while avoiding formation of a central hole off-center with respect to the substrate. A control section causes the vertical movement section to move an ultrasonic horn in directions toward and away from the cutting edge of a punching blade section to thereby cause the ultrasonic horn to press the disk-shaped substrate and at the same cause an ultrasonic generator to perform ultrasonic vibration at least from a time point at which the disk-shaped substrate is brought into contact with the cutting edge of the punching blade section to a time point at which the punching of the central hole is completed.

摘要翻译： 提供了一种光学记录介质制造装置，其能够避免基板的断裂，同时避免相对于基板偏心形成中心孔。 控制部使垂直移动部使朝向和远离冲切刀片的切割刃的方向移动超声波喇叭，从而使超声波喇叭按压盘状基板，同时使超声波发生器进行 至少从盘状基板与冲切刀片部分的切割刃接触的时间点到中心孔的冲压完成的时间点的超声波振动。

公开(公告)号：US07047859B2

公开(公告)日：2006-05-23

申请号：US10786005

申请日：2004-02-26

申请人： Junichi Ide ,  Takeshi Umega ,  Haruhiko Yamaguchi ,  Futoshi Kobayashi ,  Tsuyoshi Itoh ,  Yoshimi Yodogawa ,  Mamoru Usami

发明人： Junichi Ide ,  Takeshi Umega ,  Haruhiko Yamaguchi ,  Futoshi Kobayashi ,  Tsuyoshi Itoh ,  Yoshimi Yodogawa ,  Mamoru Usami

IPC分类号： G11B7/26 ,  B26D7/01 ,  B26D5/08

CPC分类号： G11B7/26 ,  B26D7/018 ,  B26D7/086 ,  B26D7/1863 ,  B26F1/3846 ,  B26F1/40 ,  B26F2001/4427 ,  B29C33/303 ,  B29C43/021 ,  B29C43/36 ,  B29C43/40 ,  B29C2043/025 ,  B29C2043/403 ,  Y10S83/956 ,  Y10T83/0215 ,  Y10T83/0581 ,  Y10T83/8832 ,  Y10T83/9423

摘要： An optical recording medium-manufacturing apparatus which is capable of reducing wear of a cut-forming blade section used for forming a cut in a resin layer, without increasing the component costs of the apparatus. An ultrasonic horn includes a hollow-cylindrical cut-forming blade section for being pushed into a resin layer formed on one side of a disk-shaped substrate, thereby forming a circular cut in the resin layer. A control section controls motion of the ultrasonic horn caused by a moving mechanism. The control section causes the ultrasonic horn to be pushed in to the resin layer while causing ultrasonic vibration thereof to thereby form the cut, and while maintaining a state of ultrasonic vibration of the abutment section and a pushed-in state of the cut-forming blade section, causes the punching blade section to be pushed into the disk-shaped substrate, to form the central hole.

摘要翻译： 一种光学记录介质制造装置，其能够降低用于在树脂层中形成切口的切割刃部的磨损，而不增加装置的部件成本。 超声波喇叭包括中空圆筒形切割刀片部分，用于将其推入形成在盘形基底一侧的树脂层中，从而在树脂层中形成圆形切口。 控制部控制由移动机构引起的超声波喇叭的运动。 控制部使超声波喇叭被推入到树脂层中，同时引起超声波振动，从而形成切口，同时保持邻接部的超声波振动的状态和切入刃的推入状态 使冲切刀片部分被推入盘形基片，形成中心孔。

公开(公告)号：US06613443B2

公开(公告)日：2003-09-02

申请号：US09983935

申请日：2001-10-26

申请人： Michiyasu Komatsu ,  Haruhiko Yamaguchi ,  Takayuki Naba ,  Hideki Yamaguchi

发明人： Michiyasu Komatsu ,  Haruhiko Yamaguchi ,  Takayuki Naba ,  Hideki Yamaguchi

IPC分类号： H01L2306

CPC分类号： H01L23/15 ,  C04B35/584 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  Y10T29/49158 ,  Y10T428/2949 ,  H01L2924/00

摘要： The present invention provides a silicon nitride ceramic substrate composed of a silicon nitride sintered body in which maximum size of pore existing in grain boundary phase of the sintered body is 0.3 &mgr;m or less, and having a thermal conductivity of 50 W/mK or more and a three point bending strength of 500 MPa or more, wherein a leak current is 1000 nA or less when an alternative voltage of 1.5 kV-100 Hz is applied to a portion between front and back surfaces of the silicon nitride sintered body under conditions of a temperature of 25° C. and a relative humidity of 70%. According to the above structure of the present invention, there can be provided a silicon nitride ceramic substrate capable of effectively suppressing a leak current generation when the above substrate is assembled into various power modules and circuit boards, and capable of greatly improving insulating property and operative reliability of power modules in which output power and capacity are greatly increased.