公开(公告)号：US20070076051A1

公开(公告)日：2007-04-05

申请号：US11528433

申请日：2006-09-28

申请人： Takamichi Fujii ,  Yoshinobu Nakada ,  Yukio Sakashita ,  Yoshikazu Hishinuma

发明人： Takamichi Fujii ,  Yoshinobu Nakada ,  Yukio Sakashita ,  Yoshikazu Hishinuma

IPC分类号： B41J2/155

CPC分类号： B41J2/161 ,  B41J2/14233 ,  B41J2/1626 ,  B41J2/1632 ,  B41J2/1646 ,  B41J2002/14491 ,  B41J2202/18

摘要： The liquid ejection head has a liquid ejection device which ejects liquid and is partially formed of a directionally solidified silicon substrate.

摘要翻译： 液体喷射头具有喷射液体并部分地由定向凝固的硅基板形成的液体喷射装置。

公开(公告)号：US07199057B2

公开(公告)日：2007-04-03

申请号：US10525442

申请日：2003-08-28

申请人： So Ik Bae ,  Yoshinobu Nakada ,  Kenichi Kaneko

发明人： So Ik Bae ,  Yoshinobu Nakada ,  Kenichi Kaneko

IPC分类号： H01L21/311 ,  H01L21/322

CPC分类号： H01L21/324 ,  H01L21/02046

摘要： A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silicon wafer caused by an annealing treatment is provided. The method includes, when annealing a silicon wafer having a surface on which a native oxide film has formed and boron of environmental origin or from chemical treatment prior to annealing has deposited, steps of carrying out temperature heat-up in a mixed gas atmosphere having a mixing ratio of hydrogen gas to inert gas of 5% to 100% so as to remove the boron-containing native oxide film, followed by annealing in an inert gas atmosphere.

摘要翻译： 防止硅晶片在表面附近增加硼浓度并且在退火晶片的表面与硅体之间不产生硼浓度的差异以消除由退火处理引起的硅晶片中的硼污染的方法是 提供。 该方法包括：在退火之后退火具有形成有自然氧化膜的表面和环境来源的硼或退火之前的化学处理的硅晶片退火时，在具有 氢气与惰性气体的混合比为5％〜100％，除去含硼自然氧化膜，然后在惰性气体气氛中进行退火。

公开(公告)号：US07122082B2

公开(公告)日：2006-10-17

申请号：US10706266

申请日：2003-11-13

申请人： Takaaki Shiota ,  Yoshinobu Nakada

发明人： Takaaki Shiota ,  Yoshinobu Nakada

IPC分类号： C30B15/14

CPC分类号： H01L21/3225 ,  C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L29/32

摘要： A silicon wafer wherein stacking fault (SF) nuclei are distributed throughout the entire in-plane direction, and the density of the stacking fault nuclei is set to a range of between 0.5×108 cm−3 and 1×1011 cm−3.

摘要翻译： 其中堆垛层错（SF）核分布在整个面内方向上的硅晶片，堆垛层错核的密度设定在0.5×10 8 cm -3以下的范围内， 3和1×10 11 cm -3 -3。

公开(公告)号：US06540828B2

公开(公告)日：2003-04-01

申请号：US10103797

申请日：2002-03-25

申请人： Saburo Wakita ,  Yoshinobu Nakada ,  Junichi Sasaki ,  Yuji Ishiwari

发明人： Saburo Wakita ,  Yoshinobu Nakada ,  Junichi Sasaki ,  Yuji Ishiwari

IPC分类号： C30B2502

CPC分类号： C30B29/06 ,  C30B11/007 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024

摘要： A simple and inexpensive method and apparatus for producing crystalline silicon comprising the steps of melting silicon in a mold, then cooling the bottom of the mold is cooled to create a positive temperature gradient from the bottom of the mold upward, thereby causing the molten silicon to crystallize from the inner bottom of the mold upward so that the solid-liquid phase boundary, separating the crystallized silicon from the molten silicon, moves upward as the molten silicon crystallizes. As the silicon crystallizes, an inert gas is blown onto the surface of the molten silicon from a position above the surface of the molten silicon, thereby vibrating the surface of the molten silicon in such a manner that cavities are formed in the surface of the molten silicon.

公开(公告)号：US06383285B1

公开(公告)日：2002-05-07

申请号：US09551568

申请日：2000-04-18

申请人： Saburo Wakita ,  Yoshinobu Nakada ,  Junichi Sasaki ,  Yuji Ishiwari

发明人： Saburo Wakita ,  Yoshinobu Nakada ,  Junichi Sasaki ,  Yuji Ishiwari

IPC分类号： C30B1328

CPC分类号： C30B29/06 ,  C30B11/007 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1024

摘要： A simple and inexpensive method and apparatus for producing crystalline silicon comprising the steps of melting silicon in a mold, then cooling the bottom of the mold is cooled to create a positive temperature gradient from the bottom of the mold upward, thereby causing the molten silicon to crystallize from the inner bottom of the mold upward so that the solid-liquid phase boundary, separating the crystallized silicon from the molten silicon, moves upward as the molten silicon crystallizes. As the silicon crystallizes, an inert gas is blown onto the surface of the molten silicon from a position above the surface of the molten silicon, thereby vibrating the surface of the molten silicon in such a manner that cavities are formed in the surface of the molten silicon.

摘要翻译： 一种用于制造晶体硅的简单且便宜的方法和装置，包括以下步骤：将模具中的硅熔化，然后冷却模具的底部，以从模具底部向上产生正温度梯度，从而使熔融硅 从模具的内底部向上结晶，从而使结晶硅与熔融硅分离的固液相界面随熔融硅结晶而向上移动。 当硅结晶时，惰性气体从熔融硅表面上方的位置吹到熔融硅的表面上，从而以熔融硅的表面振动熔融硅的表面，使得在熔融硅表面形成空腔 硅。

公开(公告)号：US06378835B1

公开(公告)日：2002-04-30

申请号：US09257037

申请日：1999-02-25

申请人： Saburo Wakita ,  Akira Mitsuhashi ,  Yoshinobu Nakada ,  Jun-ichi Sasaki ,  Yuhji Ishiwari

发明人： Saburo Wakita ,  Akira Mitsuhashi ,  Yoshinobu Nakada ,  Jun-ichi Sasaki ,  Yuhji Ishiwari

IPC分类号： B22D900

CPC分类号： C30B29/06 ,  C30B11/003 ,  Y10S164/06

摘要： A method for producing a silicon ingot having a directional solidification structure comprising the steps of: placing a silicon raw material into a crucible of a melting device constructed by mounting a chill plate on an underfloor heater, mounting a crucible with a large cross-sectional area on the chill plate, providing an overhead heater over the crucible, and surrounding the circumference of the crucible with a heat insulator; heat-melting the silicon raw material by flowing an electric current through the underfloor heater and overhead heater; chilling the bottom of the crucible by halting the electric current through the underfloor heater after the silicon raw material has been completely melted to form a molten silicon; chilling the bottom of the crucible by flowing an inert gas through the chill plate; and intermittently or continuously lowering the temperature of the overhead heater by intermittently or continuously decreasing the electric current through the overhead heater, and an apparatus for producing the silicon ingot.

摘要翻译： 一种制造具有定向凝固结构的硅锭的方法，包括以下步骤：将硅原料放入通过将冷却板安装在地板下加热器上构成的熔化装置的坩埚中，安装具有大横截面积的坩埚 在冷却板上，在坩埚上方提供顶部加热器，并用绝热体围绕坩埚的周边; 通过使电流流过地板加热器和塔顶加热器来热熔硅原料; 在硅原料完全熔化之后，通过停止通过地板下加热器的电流来冷却坩埚的底部以形成熔融硅; 通过使惰性气体流过冷却板来冷却坩埚的底部; 以及通过间歇地或连续地减少通过塔顶加热器的电流来间歇地或连续地降低塔顶加热器的温度，以及用于生产硅锭的装置。

公开(公告)号：US5130260A

公开(公告)日：1992-07-14

申请号：US730264

申请日：1991-07-12

申请人： Hisaaki Suga ,  Yoshinobu Nakada ,  Kazuhiro Akiyama ,  Shunji Ishibashi

发明人： Hisaaki Suga ,  Yoshinobu Nakada ,  Kazuhiro Akiyama ,  Shunji Ishibashi

IPC分类号： H01L21/322

CPC分类号： H01L21/3221 ,  H01L21/3225 ,  Y10S148/06 ,  Y10S148/061

摘要： A method of gettering unintentional mobile impurities starts with production of an damaged portion on the reverse side of a silicon wafer, and the silicon wafer is placed in a high temperature vacuum ambience so that the unintentional mobile impurities are firstly trapped by the damaged portion and, then, evacuated to the high temperature vacuum ambience.

摘要翻译： 吸收无意识的移动杂质的方法首先在硅晶片的背面产生损坏部分，并且将硅晶片置于高温真空环境中，使得无意的可移动杂质首先被损坏的部分捕获， 然后，撤离到高温真空环境。