利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

18 条记录 (耗时 0.022 秒)

    Insulated gate bipolar transistor
    11.
    发明授权
    Insulated gate bipolar transistor 失效
    绝缘栅双极晶体管

    公开(公告)号：US5719412A

    公开(公告)日：1998-02-17

    申请号：US544200

    申请日：1995-10-17

    申请人： Naoto Okabe ,  Naohito Kato

    发明人： Naoto Okabe ,  Naohito Kato

    IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/739 ,  H01L29/74 ,  H01L23/58

    CPC分类号： H01L29/42376 ,  H01L29/7395 ,  H01L29/0619

    摘要： The insulated gate bipolar transistor (IGBT) integrates the anti-excess voltage protection function and a drain voltage fixing function. When a voltage is applied across the drain electrode and the source electrode of the IGBT, a depletion zone propagates from a p-n junction between a p base layer and a n.sup.- drain layer toward inside of the n.sup.- drain layer. A critical electric field is also established, causing generation of a great number of electron-hole pairs due to impact ionization of carriers in or near the n.sup.- drain layer. Conduction exist between the drain electrode and the source electrode, at an applied voltage lower than a drain-source voltage at which the depletion region reaches a p.sup.+ drain layer through the n.sup.- drain layer, the applied voltage being equal to or lower than a critical voltage that causes generation of a great number of electron-hole pairs due to impact ionization of carriers in or near the n.sup.- drain layer below a p-n junction between a p-type guard ring and the n.sup.- drain layer.

    摘要翻译： 绝缘栅双极晶体管（IGBT）集成了防过电压保护功能和漏极电压固定功能。 当跨越IGBT的漏电极和源电极施加电压时，耗尽区从p基极层和n-drain层之间的p-n结向n漏极层的内部传播。 还建立了一个临界电场，由于在n-漏极层中或附近的载流子的撞击电离，导致产生大量的电子 - 空穴对。 导通存在于漏电极和源电极之间，在施加的电压低于耗尽区通过n-漏极层到达p +漏极层的漏 - 源电压，施加电压等于或小于临界值 由于在p型保护环和n型漏极层之间的pn结下方的n漏极层内或附近的载流子的撞击电离，导致产生大量电子 - 空穴对的电压。

    Switch circuit and ignition apparatus employing the circuit
    14.
    发明申请
    Switch circuit and ignition apparatus employing the circuit 审中-公开
    开关电路和采用该电路的点火装置

    公开(公告)号：US20050162798A1

    公开(公告)日：2005-07-28

    申请号：US11025155

    申请日：2004-12-30

    申请人： Naohito Kato ,  Motoo Yamaguchi ,  Yutaka Tomatsu

    发明人： Naohito Kato ,  Motoo Yamaguchi ,  Yutaka Tomatsu

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L27/02 ,  H01L27/06 ,  H03K17/08 ,  H03K17/082 ,  H03K17/60 ,  H03K17/61 ,  H02H3/18

    CPC分类号： H01L27/0248 ,  H03K17/0828

    摘要： A semiconductor device includes a current detection cell including a current detection device and a main cell including a power device with a means for preventing the current detection cell from being damaged by an external surge. The main cell including a first IGBT as the power device and the current detection cell including a second IGBT as the current detection device are created as a semiconductor device on a P+ substrate. A surge protection resistor is connected to the emitter of the second IGBT of the current detection cell. If a surge current caused by the external surge makes an attempt to flow through the second IGBT of the current detection cell, the surge protection resistor will limit the magnitude of the current. Thus, the magnitude of the surge current will not become a very large value.

    摘要翻译： 半导体器件包括电流检测单元，该电流检测单元包括电流检测装置和包括具有用于防止电流检测单元被外部浪涌损坏的装置的功率器件的主单元。 作为半导体器件，在P + +基板上形成包括作为功率器件的第一IGBT和包括作为电流检测器件的第二IGBT的电流检测单元的主单元。 浪涌保护电阻连接到电流检测单元的第二个IGBT的发射极。 如果由外部浪涌引起的浪涌电流试图流过电流检测单元的第二个IGBT，则浪涌保护电阻将限制电流的大小。 因此，浪涌电流的大小将不会变得非常大的值。

    Internal combustion engine ignition system
    15.
    发明授权
    Internal combustion engine ignition system 失效
    内燃机点火系统

    公开(公告)号：US5609145A

    公开(公告)日：1997-03-11

    申请号：US371702

    申请日：1995-01-12

    申请人： Masami Kojima ,  Naohito Kato

    发明人： Masami Kojima ,  Naohito Kato

    IPC分类号： F02P3/02 ,  F02P3/055

    CPC分类号： F02P3/0552 ,  F02P3/02

    摘要： An ignition system for an internal combustion engine is provided which includes an ignition coil formed with a primary winding and a secondary winding and a switching element for interrupting a current flow through the primary winding of the ignition coil at given timing. The ignition coil has a secondary winding to primary winding turns ratio a which meets the condition of V.sub.D .multidot.a >V.sub.r where V.sub.r is a required voltage of a spark plug of the engine and V.sub.D is a breakdown voltage of the switching element which is greater than or equal to 450 V.

    摘要翻译： 提供了一种用于内燃机的点火系统，其包括形成有初级绕组和次级绕组的点火线圈和用于在给定的时刻中断通过点火线圈的初级绕组的电流的开关元件。 点火线圈具有次级绕组至次级绕组匝数比a，其满足VD xa> Vr的条件，其中Vr是发动机的火花塞的所需电压，VD是开关元件的击穿电压，其大于或 等于450 V.

    Vertical semiconductor device with breakdown voltage improvement region
    16.
    发明授权
    Vertical semiconductor device with breakdown voltage improvement region 失效
    具有击穿电压改善区域的垂直半导体器件

    公开(公告)号：US5621234A

    公开(公告)日：1997-04-15

    申请号：US237413

    申请日：1994-05-03

    申请人： Naohito Kato

    发明人： Naohito Kato

    IPC分类号： H01L27/02 ,  H01L27/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78

    CPC分类号： H01L27/0251 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/0696

    摘要： This invention aims at suppressing a parasitic transistor operation of a vertical MOS device at the time of application of a noise current and improving the limitations of withstanding against destruction of the device. P base layers 3 constituting each unit cell of an n-channel DMOS device are partially connected by p extraction regions between the unit cells so as to short-circuit the p base layers to source electrodes 9 in regions Z2 through the extraction regions. Accordingly, an applied noise branches to a conventional path extending from a region Z1 to the source electrodes 9 through an n source layer 5 and a path extending from +regions Z2 to the source electrodes 9 through the p extraction regions 4. Since the p regions form one continuous region throughout the device as a whole, a local potential rise of the p base layer can be limited. Accordingly, the parasitic transistor operation can be suppressed and a breakdown voltage of the device can be improved.

    摘要翻译： 本发明旨在抑制在施加噪声电流时垂直MOS器件的寄生晶体管操作，并且改善了抵抗器件破坏的限制。 构成n沟道DMOS器件的每个单元的P基极层3通过单元电池之间的p引出区域部分地连接，从而通过提取区域将p个基极层短路到区域Z2中的源电极9。 因此，施加的噪声分支到从区域Z1到源电极9通过n源层5和从+区域Z2延伸到源极电极9通过p提取区域4的路径的常规路径。由于p区域 整个器件整体形成一个连续区域，p基层的局部电位上升可能受到限制。 因此，能够抑制寄生晶体管的动作，提高器件的击穿电压。

    Vehicle head lamp device
    17.
    发明授权
    Vehicle head lamp device 有权
    车头灯装置

    公开(公告)号：US07755295B2

    公开(公告)日：2010-07-13

    申请号：US11651865

    申请日：2007-01-10

    申请人： Yuji Kajita ,  Naohito Kato

    发明人： Yuji Kajita ,  Naohito Kato

    IPC分类号： B60Q1/02

    CPC分类号： H05B33/0893 ,  H05B33/0815 ,  Y02B20/347

    摘要： A head lamp device for a vehicle includes a DC power source, a diode array having a plurality of series-connected light emitting diodes and a current control circuit that supplies driving current to the diode array. The current control circuit is constituted of a current supply circuit, a voltage measuring circuit, a comparing circuit that compares the voltage drop with a reference value, a judging circuit for judging that there is a short-circuiting at any of the light emitting diodes based on the comparison by the comparing circuit, and a display unit for displaying an alarm when the judging circuit judges that there is a short-circuiting.

    摘要翻译： 用于车辆的前照灯装置包括直流电源，具有多个串联连接的发光二极管的二极管阵列和向二极管阵列提供驱动电流的电流控制电路。 电流控制电路由电流供给电路，电压测量电路，将电压降与参考值进行比较的比较电路构成，用于判断任何发光二极管基于短路的判断电路 通过比较电路进行比较，以及显示单元，用于当判断电路判断出存在短路时显示报警。

    Vehicle head lamp device
    18.
    发明申请
    Vehicle head lamp device 有权
    车头灯装置

    公开(公告)号：US20070159118A1

    公开(公告)日：2007-07-12

    申请号：US11651865

    申请日：2007-01-10

    申请人： Yuji Kajita ,  Naohito Kato

    发明人： Yuji Kajita ,  Naohito Kato

    IPC分类号： H05B39/00

    CPC分类号： H05B33/0893 ,  H05B33/0815 ,  Y02B20/347

    摘要： A head lamp device for a vehicle includes a DC power source, a diode array having a plurality of series-connected light emitting diodes and a current control circuit that supplies driving current to the diode array. The current control circuit is constituted of a current supply circuit, a voltage measuring circuit, a comparing circuit that compares the voltage drop with a reference value, a judging circuit for judging that there is a short-circuiting at any of the light emitting diodes based on the comparison by the comparing circuit, and a display unit for displaying an alarm when the judging circuit judges that there is a short-circuiting.

    摘要翻译： 用于车辆的前照灯装置包括直流电源，具有多个串联连接的发光二极管的二极管阵列和向二极管阵列提供驱动电流的电流控制电路。 电流控制电路由电流供给电路，电压测量电路，将电压降与参考值进行比较的比较电路构成，用于判断任何发光二极管基于短路的判断电路 通过比较电路进行比较，以及显示单元，用于当判断电路判断出存在短路时显示报警。