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18 条记录 (耗时 0.025 秒)

    Fine contact hole forming method employing thermal flow process
    11.
    发明授权
    Fine contact hole forming method employing thermal flow process 有权
    采用热流程的精细接触孔成型方法

    公开(公告)号：US07344827B2

    公开(公告)日：2008-03-18

    申请号：US10838955

    申请日：2004-05-04

    申请人： Katsuya Takemura ,  Akihiro Seki ,  Eiji Fukuda

    发明人： Katsuya Takemura ,  Akihiro Seki ,  Eiji Fukuda

    IPC分类号： G03F7/00

    CPC分类号： G03F7/40 ,  H01L21/76802

    摘要： Provided is a contact hole forming method, wherein in a thermal flow step the contact hole size can be fixed after thermal flow even if the resist material lot changes, or, wherein at the same bake temperature the contracted size, namely the flow amount, can be fixed. More specifically, provided is a contact hole forming method comprising a step of coating a resist material onto a substrate, a step of heating the coated resist material, a step of exposing the heated resist material to light through a photo mask adapted for a contact hole pattern, a step of heating the exposed resist material, a step of forming the contact hole pattern subsequently by developing with a developing fluid and a step of thermal flow treatment for heating the obtained contact hole pattern, wherein the resist material comprises an organic compound which does not react with the other components within the resist material and does not change a resolution property, and wherein when the resist material lot is changed, an amount of the organic compound to be added is changed so as to keep the contact hole pattern identical before and after the lot change.

    摘要翻译： 提供一种接触孔形成方法，其中在热流动步骤中，即使抗蚀剂材料批次改变，接触孔尺寸也可以在热流动之后固定，或者其中在相同的烘烤温度下，收缩尺寸即流量可以 被固定。 更具体地，提供了一种接触孔形成方法，包括将抗蚀剂材料涂覆到基底上的步骤，加热涂覆的抗蚀剂材料的步骤，将经加热的抗蚀剂材料曝光到通过适于接触孔的光掩模的步骤 图案，加热曝光的抗蚀剂材料的步骤，随后通过用显影液显影形成接触孔图案的步骤和用于加热所获得的接触孔图案的热流动处理步骤，其中抗蚀剂材料包含有机化合物，其中 不与抗蚀剂材料内的其它成分反应，也不会改变分辨率，并且，当改变抗蚀剂材料批次时，改变添加的有机化合物的量，以便使接触孔图案保持在相同之前 经过多次变更。

    PATTERNING PROCESS
    13.
    发明申请
    PATTERNING PROCESS 有权
    绘图过程

    公开(公告)号：US20120270159A1

    公开(公告)日：2012-10-25

    申请号：US13450867

    申请日：2012-04-19

    申请人： Tomohiro Kobayashi ,  Takeshi Kinsho ,  Akihiro Seki ,  Kentaro Kumaki

    发明人： Tomohiro Kobayashi ,  Takeshi Kinsho ,  Akihiro Seki ,  Kentaro Kumaki

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0395 ,  G03F7/0397 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/325

    摘要： A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

    摘要翻译： 通过将抗蚀剂组合物涂布在基材上，烘烤，暴露于高能量辐射，烘烤（PEB）和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域，形成负型图案。 包括含有酸不稳定基团保护的羧基的重复单元和具有内酯结构的重复单元的氢化ROMP聚合物的抗蚀剂组合物在有机溶剂显影中显示出高的溶解对比度，并且即使当酸不稳定基团为 通过暴露和PEB去保护。

    Positive resist compositions and patterning process
    15.
    发明申请
    Positive resist compositions and patterning process 审中-公开
    正极抗蚀剂组成和图案化工艺

    公开(公告)号：US20080118863A1

    公开(公告)日：2008-05-22

    申请号：US11984508

    申请日：2007-11-19

    申请人： Shigeo Tanaka ,  Akihiro Seki ,  Katsuya Takemura ,  Tsunehiro Nish

    发明人： Shigeo Tanaka ,  Akihiro Seki ,  Katsuya Takemura ,  Tsunehiro Nish

    IPC分类号： G03C1/73 ,  G03F7/20

    CPC分类号： G03F7/2041 ,  G03F7/0046 ,  G03F7/0397

    摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising specific recurring units. When processed by ArF lithography, the composition is improved in resolution and forms a contact hole pattern with a satisfactory mask fidelity, sphericity and rectangularity.

    摘要翻译： 正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。 树脂（A）是包含特定重复单元的聚合物。 当通过ArF光刻处理时，组合物的分辨率提高，并形成具有令人满意的掩模保真度，球形度和矩形性的接触孔图案。

    Patterning process
    16.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08722321B2

    公开(公告)日：2014-05-13

    申请号：US13450867

    申请日：2012-04-19

    申请人： Tomohiro Kobayashi ,  Takeshi Kinsho ,  Akihiro Seki ,  Kentaro Kumaki

    发明人： Tomohiro Kobayashi ,  Takeshi Kinsho ,  Akihiro Seki ,  Kentaro Kumaki

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0395 ,  G03F7/0397 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/325

    摘要： A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

    摘要翻译： 通过将抗蚀剂组合物涂布在基材上，烘烤，暴露于高能量辐射，烘烤（PEB）和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域，形成负图案。 包括含有酸不稳定基团保护的羧基的重复单元和具有内酯结构的重复单元的氢化ROMP聚合物的抗蚀剂组合物在有机溶剂显影中显示出高的溶解对比度，并且即使当酸不稳定基团为 通过暴露和PEB去保护。