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    PATTERNING PROCESS
    1.
    发明申请
    PATTERNING PROCESS 有权
    绘图过程

    公开(公告)号：US20120270159A1

    公开(公告)日：2012-10-25

    申请号：US13450867

    申请日：2012-04-19

    申请人： Tomohiro Kobayashi ,  Takeshi Kinsho ,  Akihiro Seki ,  Kentaro Kumaki

    发明人： Tomohiro Kobayashi ,  Takeshi Kinsho ,  Akihiro Seki ,  Kentaro Kumaki

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0395 ,  G03F7/0397 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/325

    摘要： A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

    摘要翻译： 通过将抗蚀剂组合物涂布在基材上，烘烤，暴露于高能量辐射，烘烤（PEB）和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域，形成负型图案。 包括含有酸不稳定基团保护的羧基的重复单元和具有内酯结构的重复单元的氢化ROMP聚合物的抗蚀剂组合物在有机溶剂显影中显示出高的溶解对比度，并且即使当酸不稳定基团为 通过暴露和PEB去保护。

    Patterning process
    2.
    发明授权
    Patterning process 有权
    图案化过程

    公开(公告)号：US08722321B2

    公开(公告)日：2014-05-13

    申请号：US13450867

    申请日：2012-04-19

    申请人： Tomohiro Kobayashi ,  Takeshi Kinsho ,  Akihiro Seki ,  Kentaro Kumaki

    发明人： Tomohiro Kobayashi ,  Takeshi Kinsho ,  Akihiro Seki ,  Kentaro Kumaki

    IPC分类号： G03F7/26

    CPC分类号： G03F7/0395 ,  G03F7/0397 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/325

    摘要： A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.

    摘要翻译： 通过将抗蚀剂组合物涂布在基材上，烘烤，暴露于高能量辐射，烘烤（PEB）和在有机溶剂显影剂中曝光的抗蚀剂膜显影以选择性地溶解抗蚀剂膜的未曝光区域，形成负图案。 包括含有酸不稳定基团保护的羧基的重复单元和具有内酯结构的重复单元的氢化ROMP聚合物的抗蚀剂组合物在有机溶剂显影中显示出高的溶解对比度，并且即使当酸不稳定基团为 通过暴露和PEB去保护。

    Hydrogenated ring-opening metathesis polymer, resist composition comprising the same and patterning method
    3.
    发明授权
    Hydrogenated ring-opening metathesis polymer, resist composition comprising the same and patterning method 有权
    氢化开环易位聚合物，包含其的抗蚀剂组合物和图案化方法

    公开(公告)号：US07794915B2

    公开(公告)日：2010-09-14

    申请号：US11902775

    申请日：2007-09-25

    申请人： Tadahiro Sunaga ,  Yuichi Okawa ,  Takeshi Kinsho ,  Tomohiro Kobayashi

    发明人： Tadahiro Sunaga ,  Yuichi Okawa ,  Takeshi Kinsho ,  Tomohiro Kobayashi

    IPC分类号： G03F7/004 ,  G03F7/30 ,  C08F232/08

    CPC分类号： G03F7/0395 ,  C08G61/08 ,  C08G61/12 ,  C08G2261/142 ,  C08G2261/1426 ,  C08G2261/3325 ,  C08G2261/3342 ,  C08G2261/418 ,  C08G2261/72 ,  G03F7/0397 ,  Y10S430/106

    摘要： Provided is a resin having an alicyclic structure in a main chain, which is excellent in etching resistance and developing property, a resist composition for exposure with a high energy radiation using the resin, and a method for forming a pattern using the resist composition.Also provided is a hydrogenated ring-opening metathesis polymer which is comprised of alicyclic skeleton-containing structural units [A], [B] and a structural unit [C] selected from the following general formula [5] and/or [6]: wherein, e and f represent respectively an integer of 0 to 3, wherein the at least one of X1 of the general formula [1] of the structural unit [A], X2 of the general formula [3] and X3 of the general formula [4] of the structural unit [B] is —O—, and wherein the molar ratio of the structural units [A], [B] and [C] satisfies simultaneously that [A]/([B]+[C]) is from 20/80 to 98/2, ([A]+[B])/[C] is from 99/1 to 50/50, and ([A]+[C])/[B] is from 99/1 to 21/79. Also, a resist composition comprising the same and a method for forming a pattern are provided.

    摘要翻译： 本发明提供一种具有优异的耐蚀刻性和显影性的主链中具有脂环结构的树脂，使用该树脂用高能量辐射曝光的抗蚀剂组合物，以及使用该抗蚀剂组合物形成图案的方法。 还提供了一种氢化开环易位聚合物，其由含脂环骨架的结构单元[A]，[B]和选自以下通式[5]和/或[6]的结构单元[C]组成： 其中，e和f分别表示0〜3的整数，式中结构单元[A]的通式[1]的X1，通式[3]的X2和通式 结构单元[B]的[4]为-O-，其中结构单元[A]，[B]和[C]的摩尔比同时满足[A] /（[B] + [C] ）为20/80〜98/2，（[A] + [B]）/ [C]为99/1〜50/50，（[A] + [C]）/ [B] 99/1至21/79。 此外，提供了包含该抗蚀剂组合物的抗蚀剂组合物和形成图案的方法。

    Resist composition and patterning process
    5.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US06667145B1

    公开(公告)日：2003-12-23

    申请号：US09694369

    申请日：2000-10-24

    申请人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

    发明人： Tsunehiro Nishi ,  Takeru Watanabe ,  Takeshi Kinsho ,  Koji Hasegawa ,  Tomohiro Kobayashi ,  Jun Hatakeyama

    IPC分类号： G03C173

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106

    摘要： A resist composition contains as a base resin a polymer represented by the following formula and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is alkyl, R3 is H, methyl or CH2CO2R2, at least one of R4 to R7 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are independently H or alkyl, at least one of R8 to R11 is a monovalent hydrocarbon group of 2 to 15 carbon atoms containing a —CO2— partial structure, and the reminders are independently H or alkyl, R12 is a polycyclic hydrocarbon group or an alkyl group containing such a polycyclic hydrocarbon group, R13 is an acid labile group, Z is a divalent group of atoms to construct a 5- or 6-membered ring which contains a carboxylate, carbonate or acid anhydride therein, k is 0 or 1, x is a number from more than 0 to 1, “a” to “d” are from 0 to less than 1, x+a+b+c+d=1. The resist composition has significantly improved resolution, substrate adhesiveness, and etching resistance and is very useful in precise microfabrication.

    摘要翻译： 抗蚀剂组合物包含作为基础树脂的由下式表示的聚合物，其Mw为1,000-500,000.R 1是H，甲基或CO 2 R 2，R 2是烷基，R 3是 H，甲基或CH 2 CO 2 R 2，R 4至R 7中的至少一个是含羧基或羟基的一价烃基，并且提醒独立地为H或烷基，R 8， R 11是含有-CO 2 - 部分结构的2至15个碳原子的一价烃基，并且提醒独立地是H或烷基，R 12是多环烃基或含有这种多环的烷基 烃基，R 13是酸不稳定基团，Z是构成其中含有羧酸酯，碳酸酯或酸酐的5-或6-元环的二价原子基团，k是0或1，x是 数字从0到1，“a”到“d”从0到小于1，x + a + b + c + d = 1。 抗蚀剂组合物具有显着提高的分辨率，基底粘附性和耐蚀刻性，并且在精确微细加工中非常有用。