公开(公告)号：US20090034322A1

公开(公告)日：2009-02-05

申请号：US11946025

申请日：2007-11-27

申请人： Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

发明人： Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

IPC分类号： G11C11/02

CPC分类号： G11C11/15 ,  Y10S977/935

摘要： A magnetic random access memory includes at least a first-direction write current line and multiple second-direction write current line, intersecting with the first-direction write current line in substantial perpendicular and forming several intersecting regions. Multiple magnetic memory cells are respectively located at the intersecting regions for receiving an induced magnetic field in a time sequence. Every at least two adjacent memory cells are in parallel or series connection, to form at least one memory unit. An easy axis of a free layer of each magnetic memory cell is substantially perpendicular to a magnetization of a pinned layer. The easy axis and the first-direction write current line form an including angle of about 45°. A read bit-line circuit connects to a first terminal of the memory unit. A read word-line circuit connects to a second terminal of the memory unit.

摘要翻译： 磁性随机存取存储器包括至少第一方向写入电流线和多个第二方向写入电流线，该第一方向写入电流线与第一方向写入电流线相交并且形成若干相交区域。 多个磁存储单元分别位于交叉区域，用于以时间顺序接收感应磁场。 每个至少两个相邻的存储器单元是并联或串联连接的，以形成至少一个存储单元。 每个磁存储单元的自由层的容易轴基本上垂直于被钉扎层的磁化。 易轴和第一方向写电流线形成约45°的包含角度。 读位线电路连接到存储器单元的第一端。 读取字线电路连接到存储器单元的第二端子。

公开(公告)号：US20070195593A1

公开(公告)日：2007-08-23

申请号：US11459029

申请日：2006-07-21

申请人： Yuan-Jen Lee ,  Chien-Chung Hung ,  Ming-Jer Kao

发明人： Yuan-Jen Lee ,  Chien-Chung Hung ,  Ming-Jer Kao

IPC分类号： G11C11/14

CPC分类号： G11C11/16

摘要： A structure of magnetic memory cell, suitable for a magnetic memory device with toggle mode access operation is provided, which includes a magnetic pinned stacked layer as a portion of a substrate structure; a tunnel barrier layer disposed on the magnetic pinned stacked layer; a magnetic free stacked layer disposed on the tunnel barrier layer; a magnetic bias stacked layer disposed on the magnetic free stacked layer, wherein the magnetic bias stacked layer applies a compensative magnetic field to the magnetic free stacked layer, so as to move a toggle operation region towards a magnetic zero point. Further, the magnetic field effect of the magnetic bias stacked layer also includes reducing a direct mode region adjacent to the toggle operation region.

摘要翻译： 提供了适用于具有拨动模式存取操作的磁存储器件的磁存储单元的结构，其包括作为衬底结构的一部分的磁性固定堆叠层; 设置在所述磁性钉扎层叠层上的隧道势垒层; 设置在隧道势垒层上的无磁性堆叠层; 设置在无磁性层叠层上的磁偏置堆叠层，其中所述磁偏置堆叠层向所述无磁性堆叠层施加补偿磁场，以将触发操作区域朝向磁零点移动。 此外，磁偏置堆叠层的磁场效应还包括减少与肘节操作区域相邻的直接模式区域。

公开(公告)号：US20070171703A1

公开(公告)日：2007-07-26

申请号：US11558297

申请日：2006-11-09

申请人： Rei-Fu Huang ,  Young-Shying Chen ,  Chien-Chung Hung ,  Yuan-Jen Lee ,  Ming-Jer Kao

发明人： Rei-Fu Huang ,  Young-Shying Chen ,  Chien-Chung Hung ,  Yuan-Jen Lee ,  Ming-Jer Kao

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A current source for magnetic random access memory (MRAM) is provided, including a band-gap reference circuit, a first stage buffer, and a plurality of second stage buffers. The band-gap reference circuit provides an output reference voltage which is locked by the first stage buffer. The plurality of second stage buffers generate a stable voltage in response to the locked voltage, so as to provide a current for the conducting wire after being converted, such that magnetic memory cell changes its memory state in response to the current. The current source may reduce the discharge time under the operation of biphase current, so as to raise the operating speed. Further, the circuit area of the current source for the MRAM is also reduced. The operation of multiple write wires may be provided simultaneously to achieve parallel write.

摘要翻译： 提供了一种用于磁随机存取存储器（MRAM）的电流源，包括带隙参考电路，第一级缓冲器和多个第二级缓冲器。 带隙基准电路提供由第一级缓冲器锁定的输出参考电压。 多个第二级缓冲器响应于锁定电压产生稳定的电压，以便在转换之后为导线提供电流，使得磁存储单元响应于电流来改变其存储状态。 电流源可以减少双相电流运行时的放电时间，从而提高运行速度。 此外，MRAM的电流源的电路面积也减小。 可以同时提供多条写入线的操作以实现并行写入。

公开(公告)号：US07539049B2

公开(公告)日：2009-05-26

申请号：US11946025

申请日：2007-11-27

申请人： Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

发明人： Chien-Chung Hung ,  Ming-Jer Kao ,  Ding-Yeong Wang ,  Yuan-Jen Lee

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  Y10S977/935

摘要： A magnetic random access memory includes at least a first-direction write current line and multiple second-direction write current line, intersecting with the first-direction write current line in substantial perpendicular and forming several intersecting regions. Multiple magnetic memory cells are respectively located at the intersecting regions for receiving an induced magnetic field in a time sequence. Every at least two adjacent memory cells are in parallel or series connection, to form at least one memory unit. An easy axis of a free layer of each magnetic memory cell is substantially perpendicular to a magnetization of a pinned layer. The easy axis and the first-direction write current line form an including angle of about 45°. A read bit-line circuit connects to a first terminal of the memory unit. A read word-line circuit connects to a second terminal of the memory unit.

摘要翻译： 磁性随机存取存储器包括至少第一方向写入电流线和多个第二方向写入电流线，该第一方向写入电流线与第一方向写入电流线相交并且形成若干相交区域。 多个磁存储单元分别位于交叉区域，用于以时间顺序接收感应磁场。 每个至少两个相邻的存储器单元是并联或串联连接的，以形成至少一个存储单元。 每个磁存储单元的自由层的容易轴基本上垂直于被钉扎层的磁化。 易轴和第一方向写电流线形成约45°的包含角度。 读位线电路连接到存储器单元的第一端。 读取字线电路连接到存储器单元的第二端子。

公开(公告)号：US07515458B2

公开(公告)日：2009-04-07

申请号：US11465460

申请日：2006-08-18

申请人： Chien-Chung Hung ,  Yung-Hsiang Chen ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Yung-Hung Wang

发明人： Chien-Chung Hung ,  Yung-Hsiang Chen ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Yung-Hung Wang

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.

摘要翻译： 在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。 堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。 隧道势垒层设置在堆叠的磁性钉扎层上。 无磁性堆叠层设置在隧道势垒层上。 无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。 当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。 磁偏置层也可以设置在顶部自由层上。

公开(公告)号：US20070030727A1

公开(公告)日：2007-02-08

申请号：US11338653

申请日：2006-01-25

申请人： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

发明人： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

IPC分类号： G11C11/14

CPC分类号： G11C11/1693 ,  G11C11/1673 ,  G11C11/1675

摘要： A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.

摘要翻译： 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

公开(公告)号：US07359237B2

公开(公告)日：2008-04-15

申请号：US10846663

申请日：2004-05-17

申请人： Chien-Chung Hung ,  Ming-Jer Kao ,  Yung-Hsiang Chen ,  Shu-En Li

发明人： Chien-Chung Hung ,  Ming-Jer Kao ,  Yung-Hsiang Chen ,  Shu-En Li

IPC分类号： G11C11/15

CPC分类号： G11C11/14

摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.

摘要翻译： 提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。 写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。 根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。 这有效地降低了MRAM的功耗。

公开(公告)号：US20050135149A1

公开(公告)日：2005-06-23

申请号：US10846663

申请日：2004-05-17

申请人： Chien-Chung Hung ,  Ming-Jer Kao ,  Yung-Hsiang Chen ,  Shu-En Li

发明人： Chien-Chung Hung ,  Ming-Jer Kao ,  Yung-Hsiang Chen ,  Shu-En Li

IPC分类号： G11C11/14 ,  G11C11/16

CPC分类号： G11C11/14

摘要： A low-power magnetic random access memory (MRAM) with high write selectivity is provided. Write word lines and pillar write word lines covered with a magnetic material are disposed in an zigzag relation, solving the magnetic interference problem generated by cells adjacent to the pillar write word line in the magnetic RAM with the pillar write word line form. According to the disclosed structure, each of the cells has a smaller bit size and a lower write current. This effectively reduces the power consumption of the MRAM.

摘要翻译： 提供了具有高写入选择性的低功率磁随机存取存储器（MRAM）。 写入用磁性材料覆盖的字线和柱写字字线以锯齿形关系布置，解决了具有柱写字线形式的磁RAM中与柱写字字相邻的单元产生的磁干扰问题。 根据所公开的结构，每个单元具有较小的位大小和较低的写入电流。 这有效地降低了MRAM的功耗。

公开(公告)号：US20060113619A1

公开(公告)日：2006-06-01

申请号：US11224082

申请日：2005-09-13

申请人： Chien-Chung Hung ,  Yung-Hsiang Chen ,  Ming-Jer Kao ,  Kuo-Lung Chen ,  Lien-Chang Wang ,  Yung-Hung Wang

发明人： Chien-Chung Hung ,  Yung-Hsiang Chen ,  Ming-Jer Kao ,  Kuo-Lung Chen ,  Lien-Chang Wang ,  Yung-Hung Wang

IPC分类号： H01L43/00

CPC分类号： H01L43/08 ,  G11C11/15 ,  H01L27/228

摘要： A magnetic random access memory having reference magnetic resistance is provided. The memory includes at least one magnetic memory cell having an antiferromagnet layer, a pinned layer formed thereon, a tunnel barrier layer formed thereon, and a free layer formed thereon. The pinned layer and free layer are arranged orthogonally to form a reference magnetic resistance state. Through the provided MRAM structure, the access accuracy is greatly increased and the access speed is accelerated.

摘要翻译： 提供具有参考磁阻的磁性随机存取存储器。 存储器包括至少一个具有反铁磁体层，形成在其上的被钉扎层，形成在其上的隧道势垒层和形成在其上的自由层的磁存储单元。 钉扎层和自由层正交布置以形成参考磁阻状态。 通过提供的MRAM结构，访问精度大大提高，访问速度加快。

公开(公告)号：US06791887B2

公开(公告)日：2004-09-14

申请号：US10653992

申请日：2003-09-04

申请人： Chien-Chung Hung ,  Ming-Jer Kao ,  Tsung-Ming Pan ,  Yung-Hsiang Chen

发明人： Chien-Chung Hung ,  Ming-Jer Kao ,  Tsung-Ming Pan ,  Yung-Hsiang Chen

IPC分类号： G11C714

CPC分类号： G11C5/147 ,  G11C7/14 ,  G11C11/15 ,  G11C11/5607

摘要： The present invention relates to a simplified reference current generator for a magnetic random access memory. The reference current generator is positioned in the vicinity of the memory cells of the magnetic random access memory, and applies reference elements which are the same as the magnetic tunnel junctions of the memory cell and bear the same cross voltages. The plurality of reference elements are used for forming the reference current generator by using one or several bit lines, and the voltage which is the same as the voltage of the memory cell is crossly connected to the reference elements so as to generate a plurality of current signals; and a peripheral IC circuit is used for generating the plurality of midpoint reference current signals and judging the data states. Thanks to the midpoint reference current signals, the multiple-states memory cell, including the 2-states memory cell, can read data more accurately.

摘要翻译： 本发明涉及一种用于磁随机存取存储器的简化参考电流发生器。 参考电流发生器位于磁随机存取存储器的存储单元附近，并且施加与存储单元的磁隧道结相同并且承受相同交叉电压的参考元件。 多个参考元件用于通过使用一个或几个位线形成参考电流发生器，并且与存储器单元的电压相同的电压被交叉地连接到参考元件，以便产生多个电流 信号; 并且使用外围IC电路来产生多个中点参考电流信号并判断数据状态。 由于中点参考电流信号，包括2状态存储单元的多状态存储单元可以更精确地读取数据。