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公开(公告)号：US07551004B2
公开(公告)日：2009-06-23
申请号：US11337595
申请日：2006-01-24
申请人： Yoshimi Okazaki , Kiyoshi Mori , Hiroyuki Yamazaki
发明人： Yoshimi Okazaki , Kiyoshi Mori , Hiroyuki Yamazaki
IPC分类号： H03K3/00
CPC分类号： H03K17/08122 , H03K17/163
摘要： An inverter apparatus is composed of a power MOSFET having a source/drain connected to an output terminal, and a gate drive circuit driving a gate of the power MOSFET. The gate drive circuit includes a discharging path connected with the gate of the power MOSFET. The discharging path includes a set of serially-connected diodes which are forward-connected in a direction of a discharge current from the gate of the power MOSFET.
摘要翻译： 逆变器装置由具有与输出端子连接的源极/漏极的功率MOSFET和驱动功率MOSFET的栅极的栅极驱动电路构成。 栅极驱动电路包括与功率MOSFET的栅极连接的放电路径。 放电路径包括一组串联连接的二极管，其在来自功率MOSFET的栅极的放电电流的方向上正向连接。
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公开(公告)号：US20080090304A1
公开(公告)日：2008-04-17
申请号：US11770245
申请日：2007-06-28
CPC分类号： G01N33/6893 , G01N2800/347 , G01N2800/50 , G01N2800/56
摘要： A method of assessing the ongoing kidney status of a mammal afflicted with or at risk of developing chronic renal injury or disease, including chronic renal failure (CRF) by detecting the quantity of Neutrophil Gelatinase-Associated Lipocalin (NGAL) in urine, serum or plasma samples at discrete time periods, as well as over time. Incremental increases in NGAL levels in CRF patients over a prolonged period of time are diagnostic of worsening kidney disease. This increase in NGAL precedes and correlates with other indicators of worsening chronic renal disease or CRF, such as increased serum creatinine, increased urine protein secretion, and lower glomerular filtration rate (GFR). Proper detection of worsening (or improving, if treatment has been instituted) renal status over time, confirmed by pre- and post-treatment NGAL levels in the patient, can aid the clinical practitioner in designing and/or maintaining a proper treatment regimen to slow or stop the progression of CRF.
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公开(公告)号：US20070037232A1
公开(公告)日：2007-02-15
申请号：US11374285
申请日：2005-10-13
IPC分类号： G01N33/53
CPC分类号： G01N33/6893 , G01N2800/347 , G01N2800/52
摘要： Methods of assessing the ongoing kidney status in a subject afflicted with chronic renal failure (CRF) by detecting the quantity of Neutrophil Gelatinase-Associated Lipocalin (NGAL) in fluid samples over time is disclosed. NGAL is a small secreted polypeptide that is protease resistant and consequently readily detected in the urine and serum as a result of chronic renal tubule cell injury. Incremental increases in NGAL levels in CRF patients over a prolonged period of time are diagnostic of worsening kidney disease. This increase in NGAL precedes and correlates with other indicators of worsening CRF, such as increased serum creatinine, increased urine protein secretion, and lower glomerular filtration rate (GFR). Proper detection of worsening (or improving, if treatment has been instituted) renal status over time, confirmed by pre- and post-treatment NGAL levels in the patient, can aid the clinical practitioner in designing and/or maintaining a proper treatment regimen to slow or stop the progression of CRF.
摘要翻译： 公开了通过随时间检测流体样品中嗜中性粒细胞明胶酶相关脂质运载蛋白（NGAL）的量来评估患有慢性肾功能衰竭（CRF）的受试者正在进行的肾脏状态的方法。 NGAL是一种小分泌的多肽，其是蛋白酶抗性的，因此由于慢性肾小管细胞损伤在尿液和血清中容易检测到。 长时间的CRF患者NGAL水平的增加增加是肾脏疾病恶化的诊断。 NGAL的这种增加先于CRF恶化的其他指标，如增加血清肌酐，增加尿蛋白分泌，降低肾小球滤过率（GFR）。 通过患者治疗前和治疗后的NGAL水平证实，正确检测恶化（或改善，如果治疗已经建立）肾脏状态，可以帮助临床从业者设计和/或维持适当的治疗方案缓慢 或停止CRF的进展。
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公开(公告)号：US20060076928A1
公开(公告)日：2006-04-13
申请号：US11221894
申请日：2005-09-09
申请人： Manabu Okamoto , Kiyoshi Mori
发明人： Manabu Okamoto , Kiyoshi Mori
IPC分类号： H02J7/00
CPC分类号： H02J7/0052 , Y10T307/516
摘要： A charger of the present invention includes a charging transistor and a charging integrated circuit. The charging transistor is series-connected with a secondary battery to supply a charging current to the secondary battery. The charging integrated circuit is incorporated into a package having a higher heat releasability than that of the charging transistor. The charging integrated circuit controls the charging transistor and besides, supplies a charging current to the secondary battery. For this purpose, the charging integrated circuit includes a current source supplying this charging current. The charging current from the current source is supplied to the secondary battery together with the charging current from the charging transistor to charge the secondary battery.
摘要翻译： 本发明的充电器包括充电晶体管和充电集成电路。 充电晶体管与二次电池串联连接以向二次电池提供充电电流。 充电集成电路被并入具有比充电晶体管更高的散热性的封装。 充电集成电路控制充电晶体管，此外，向二次电池供给充电电流。 为此，充电集成电路包括提供该充电电流的电流源。 来自电流源的充电电流与来自充电晶体管的充电电流一起被提供给二次电池以对二次电池充电。
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公开(公告)号：US06638803B2
公开(公告)日：2003-10-28
申请号：US10117194
申请日：2002-04-08
申请人： Kiyoshi Mori , Akinobu Teramoto
发明人： Kiyoshi Mori , Akinobu Teramoto
IPC分类号： H01L218238
CPC分类号： H01L21/2652 , H01L21/2658 , H01L21/28061 , H01L21/823835 , H01L21/823842 , H01L29/4933 , H01L29/6659
摘要： Isolation regions 12 are formed on a silicon substrate 10 to isolate NMOS and PMOS regions in which to form NMOS and PMOS transistors respectively. A silicon oxide film 14 and an amorphous silicon film 16 are formed as a gate insulating film on the silicon substrate 10. N-type impurities are injected into the NMOS regions (FIG. 1A). A WSi film 22 is formed on the amorphous silicon film 16, and N-type impurities are injected only into the PMOS regions of the film 16 (FIG. 1C). A silicon oxide film 28 and a silicon nitride film 30 are formed on the WSi film 22 and then etched into gate electrodes (FIG. 1E).
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公开(公告)号：US5971586A
公开(公告)日：1999-10-26
申请号：US611277
申请日：1996-03-18
申请人： Kiyoshi Mori
发明人： Kiyoshi Mori
IPC分类号： G01B11/00 , G01N21/88 , G01N21/94 , G01N21/956 , G01R31/26 , H01L21/304 , H01L21/66 , G06F19/00
CPC分类号： H01L22/20
摘要： A method for identifying those process steps which produce "high risk" particulate contamination that is most likely to produce defects. The die positions of particulate deposits on a wafer are measured prior to and subsequent to a specific process step, to determine the die positions of particulate deposits introduced during that specific process step. Then, subsequent electrical tests of the wafer are used to determine which locations on the wafer contain faulty circuitry. The locations of particulate deposits introduced during the specific process step are then correlated to the locations of faulty circuitry. The result is a measure of the extent to which particulate deposits introduced during the specific process step contribute to reductions in yield of the manufacturing process.
摘要翻译： 一种识别那些最有可能产生缺陷的“高风险”颗粒污染物的工艺步骤的方法。 在特定工艺步骤之前和之后测量在晶片上的颗粒沉积物的模头位置，以确定在该特定工艺步骤期间引入的颗粒沉积物的模具位置。 然后，使用晶片的随后的电测试来确定晶片上的哪些位置包含故障电路。 然后在特定工艺步骤期间引入的颗粒沉积物的位置与故障电路的位置相关。 结果是在特定工艺步骤期间引入颗粒沉积物的程度有助于降低制造过程的产量的量度。
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公开(公告)号：US5016068A
公开(公告)日：1991-05-14
申请号：US449135
申请日：1989-12-08
申请人： Kiyoshi Mori
发明人： Kiyoshi Mori
IPC分类号： H01L27/115
CPC分类号： H01L27/115
摘要： An electrically erasable, progammable, read-only-memory, floating-gate, metal-oxide-semiconductor transistor constructed in a trench extending through layers of P-type and N-type material formed on a semiconductor substrate. The floating-gate transistor is comprised of two source-drain regions, a channel region, a floating gate, a programming gate, and gate-oxide layers and is characterized by a floating-gate to channel capacitance that is small relative to the programming-gate to floating-gate capacitance, thereby allowing charging of the floating gate using programming and erasing voltages of less magnitude than might otherwise be necessary.
摘要翻译： 构造在延伸穿过形成在半导体衬底上的P型和N型材料层的沟槽中的电可擦除，可执行的只读存储器，浮栅，金属氧化物半导体晶体管。 浮栅晶体管由两个源极 - 漏极区，沟道区，浮置栅，编程栅和栅氧化物层组成，其特征在于浮栅对沟道电容相对于编程 - 栅极到浮置栅极电容，从而允许使用比另外可能需要的程度更小的量的编程和擦除电压对浮置栅极进行充电。
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公开(公告)号：US5016067A
公开(公告)日：1991-05-14
申请号：US449124
申请日：1989-12-08
申请人： Kiyoshi Mori
发明人： Kiyoshi Mori
IPC分类号： H01L29/08 , H01L29/423 , H01L29/78
CPC分类号： H01L29/4236 , H01L29/0847 , H01L29/7827
摘要： A transistor structure is disclosed which has a vertical channel which has its length controllable by currently-used diffusion processes, and which occupies a minimum of silicon surface area. The transistor is constructed by using a triple-level implant and diffusion process. The drain region is diffused into the silicon area by way of ion implantation and subsequent diffusion. The channel region, of opposite conductivity-type from the drain region, is implanted and diffused into the drain region. The source region is similarly implanted, and diffused into the channel region. A trench is etched into the silicon, extending through the source, channel and drain regions; gate oxide is grown in the trench and a polysilicon gate is deposited in the trench, conformal with the gate oxide. Transistor action takes place in the channel region along the walls of the trench, dependent upon the voltage applied to the gate electrode. Series drain resistance, and gate-to-drain capacitance, is minimized by a deeper implant of the drain region away from the trench and under the electrical interconnection to the drain diffusion.
摘要翻译： 公开了一种晶体管结构，其具有垂直通道，其垂直通道的长度可通过当前使用的扩散过程控制，并且占据硅表面积的最小值。 晶体管通过使用三电平植入和扩散工艺构成。 漏极区域通过离子注入和随后的扩散扩散到硅区域。 与漏极区相反的导电类型的沟道区被注入并扩散到漏极区。 源区类似地植入，并扩散到沟道区。 沟槽被蚀刻到硅中，延伸穿过源极，沟道和漏极区; 栅极氧化物在沟槽中生长，并且多晶硅栅极沉积在沟槽中，与栅极氧化物保形。 晶体管的作用发生在沿着沟槽壁的沟道区域中，取决于施加到栅电极的电压。 串联漏极电阻和栅极到漏极电容通过漏极区域远离沟槽和在与漏极扩散的电互连下更深地注入而最小化。
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公开(公告)号：US20100243767A1
公开(公告)日：2010-09-30
申请号：US12741756
申请日：2008-11-05
申请人： Kiyoshi Mori , Kenichi Kakita , Tosiaki Mamemoto , Yoshihiro Ueda , Toyoshi Kamisako , Takahiro Ueno
发明人： Kiyoshi Mori , Kenichi Kakita , Tosiaki Mamemoto , Yoshihiro Ueda , Toyoshi Kamisako , Takahiro Ueno
CPC分类号： F25D17/042 , A23L3/375 , F25B2400/121 , F25B2700/02 , F25D29/006 , F25D2317/0415 , F25D2317/0416 , F25D2400/24 , F25D2500/02
摘要： A refrigerator includes: a storage compartment that is separated and heat-insulated from another area; an atomization device having an electrode unit that sprays mist into the storage compartment; and a protection unit that improves safety of a user.
摘要翻译： 冰箱包括：与另一区域隔离并隔热的储藏室; 雾化装置，其具有将雾喷射到储藏室中的电极单元; 以及提高用户安全性的保护单元。
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公开(公告)号：US20100234765A1
公开(公告)日：2010-09-16
申请号：US12785237
申请日：2010-05-21
IPC分类号： A61B5/00
CPC分类号： G01N33/566 , G01N33/6893 , G01N2800/347
摘要： A method of assessing the ongoing kidney status of a mammal afflicted with or at risk of developing chronic renal injury or disease, including chronic renal failure (CRF) by detecting the quantity of Neutrophil Gelatinase-Associated Lipocalin (NGAL) in urine, serum or plasma samples at discrete time periods, as well as over time. Incremental increases in NGAL levels in CRF patients over a prolonged period of time are diagnostic of worsening kidney disease. This increase in NGAL precedes and correlates with other indicators of worsening chronic renal disease or CRF, such as increased serum creatinine, increased urine protein secretion, and lower glomerular filtration rate (GFR). Proper detection of worsening (or improving, if treatment has been instituted) renal status over time, confirmed by pre- and post-treatment NGAL levels in the patient, can aid the clinical practitioner in designing and/or maintaining a proper treatment regimen to slow or stop the progression of CRF.
摘要翻译： 通过检测尿液，血清或血浆中的嗜中性粒细胞明胶酶相关脂质运载蛋白（NGAL）的量来评估患有慢性肾损伤或疾病的哺乳动物的正在进行的肾脏状态的方法，包括慢性肾功能衰竭（CRF） 样品在离散的时间段，以及随着时间的推移。 长时间的CRF患者NGAL水平的增加增加是肾脏疾病恶化的诊断。 NGAL的这种增加先于慢性肾病或CRF恶化的其他指标，如血清肌酐升高，尿蛋白分泌增加，肾小球滤过率（GFR）降低。 通过患者治疗前和治疗后的NGAL水平证实，正确检测恶化（或改善，如果治疗已经建立）肾脏状态，可以帮助临床从业者设计和/或维持适当的治疗方案缓慢 或停止CRF的进展。
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