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    Plasma doping method and plasma doping apparatus
    11.
    发明申请
    Plasma doping method and plasma doping apparatus 审中-公开
    等离子体掺杂法和等离子体掺杂装置

    公开(公告)号：US20070111548A1

    公开(公告)日：2007-05-17

    申请号：US11647235

    申请日：2006-12-29

    申请人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    发明人： Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Tomohiro Okumura

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L21/2236 ,  C23C14/48 ,  H01J37/32412

    摘要： Disclosed is a plasma doping method that, even though a plasma doping treatment is repeated, can make a dose from a film to a silicon substrate uniform for each time. According to an embodiment of the invention, there is provided a plasma doping method that places a sample on a sample electrode in a vacuum chamber, generates plasma in the vacuum chamber, and causes impurity ions in the plasma to collide against a surface of the sample so as to form an impurity doped layer in the surface of the sample. The plasma doping method includes a maintenance step of preparing the vacuum chamber having a film containing an impurity formed on an inner wall thereof such that, when the film containing the impurity fixed to the inner wall of the vacuum chamber is attacked by ions in the plasma, the amount of an impurity to be doped into the surface of the sample by sputtering is not changed even though the plasma containing the impurity ions is repeatedly generated in the vacuum chamber, a step of placing the sample on the sample electrode, and a step of irradiating the plasma containing the impurity ions so as to implant the impurity ions into the sample, and doping the impurity into the sample by sputtering from the film containing the impurity fixed to the inner wall of the vacuum chamber.

    摘要翻译： 公开了等离子体掺杂方法，即使重复进行等离子体掺杂处理，也可以每次从膜到硅衬底的剂量均匀。 根据本发明的实施例，提供了一种等离子体掺杂方法，其将样品置于真空室中的样品电极上，在真空室中产生等离子体，并使等离子体中的杂质离子与样品的表面碰撞 以在样品的表面形成杂质掺杂层。 等离子体掺杂方法包括维持步骤，准备具有含有形成在其内壁上的杂质的膜的真空室，使得当包含固定在真空室的内壁上的杂质的膜被等离子体中的离子侵蚀时 即使在真空室中重复产生含有杂质离子的等离子体，将样品放置在样品电极上的步骤，也可以通过溅射将待掺杂到样品表面的杂质量变化， 照射含​​有杂质离子的等离子体，以将杂质离子注入到样品中，并通过溅射从固定到真空室的内壁的杂质的膜溅射而将杂质掺杂到样品中。

    PLASMA DOPING METHOD AND APPARATUS
    12.
    发明申请
    PLASMA DOPING METHOD AND APPARATUS 审中-公开
    等离子喷涂方法和装置

    公开(公告)号：US20120186519A1

    公开(公告)日：2012-07-26

    申请号：US13358277

    申请日：2012-01-25

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    IPC分类号： C23C16/50

    CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

    摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

    摘要翻译： 一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。 通过压力调节阀将真空容器内的压力保持在规定值。 将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

    Plasma Doping Method and Apparatus
    16.
    发明申请
    Plasma Doping Method and Apparatus 审中-公开
    等离子体掺杂法和装置

    公开(公告)号：US20090233383A1

    公开(公告)日：2009-09-17

    申请号：US11884924

    申请日：2006-02-14

    申请人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    发明人： Tomohiro Okumura ,  Yuichiro Sasaki ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno ,  Cheng-Guo Jin ,  Ichiro Nakayama

    IPC分类号： H01L21/66 ,  B05C11/00

    CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412 ,  H01J2237/2001

    摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.

    摘要翻译： 旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。 将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。 真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8， 与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。 每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。 控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

    Plasma Doping Method and Apparatus
    17.
    发明申请
    Plasma Doping Method and Apparatus 审中-公开
    等离子体掺杂法和装置

    公开(公告)号：US20090035878A1

    公开(公告)日：2009-02-05

    申请号：US11887359

    申请日：2006-03-30

    申请人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

    发明人： Yuichiro Sasaki ,  Tomohiro Okumura ,  Katsumi Okashita ,  Hiroyuki Ito ,  Bunji Mizuno

    IPC分类号： H01L21/265 ,  B05C11/00

    CPC分类号： H01J37/32935 ,  H01J37/32412 ,  H01L21/67115 ,  H01L22/20 ,  H01L22/26

    摘要： There are provided a plasma doping method and apparatus which is excellent in a repeatability and a controllability of an implanting depth of an impurity to be introduced into a sample or a depth of an amorphous layer.A plasma doping method of generating a plasma in a vacuum chamber and colliding an ion in the plasma with a surface of a sample to modify a surface of a crystal sample to be amorphous, includes the steps of carrying out a plasma irradiation over a dummy sample to perform an amorphizing treatment together with a predetermined number of samples, irradiating a light on a surface of the dummy sample subjected to the plasma irradiation, thereby measuring an optical characteristic of the surface of the dummy sample, and controlling a condition for treating the sample in such a manner that the optical characteristic obtained at the measuring step has a desirable value.

    摘要翻译： 提供了等离子体掺杂方法和装置，该方法和设备在被引入样品或非晶层的深度中的杂质的注入深度的重复性和可控性方面是优异的。 一种在真空室中产生等离子体并将等离子体中的离子与样品的表面相互作用以将晶体样品的表面修饰为无定形的等离子体掺杂方法包括以下步骤：对虚拟样品进行等离子体照射 与预定数量的样品一起进行非晶化处理，照射经受等离子体照射的虚拟样品的表面上的光，从而测量虚拟样品的表面的光学特性，并控制处理样品的条件 使得在测量步骤获得的光学特性具有期望的值。

    Method of Introducing Impurity
    18.
    发明申请
    Method of Introducing Impurity 审中-公开
    引入杂质的方法

    公开(公告)号：US20080194086A1

    公开(公告)日：2008-08-14

    申请号：US11628454

    申请日：2005-05-31

    申请人： Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Hiroyuki Ito

    发明人： Yuichiro Sasaki ,  Bunji Mizuno ,  Katsumi Okashita ,  Cheng-Guo Jin ,  Hiroyuki Ito

    IPC分类号： H01L21/26 ,  H01L21/265

    CPC分类号： H01L21/2236 ,  H01J37/32412

    摘要： There is provided a method of introducing impurity capable of efficiently realizing a shallow impurity introduction. The impurity introducing method includes a first step of making a surface of a semiconductor layer to be amorphous by reacting plasma composed of particles which are electrically inactive in the semiconductor layer to a surface of a solid base body including the semiconductor layer, and a second step of introducing impurity to the surface of the solid base body.After performing the first step, by performing the second step, an amorphous layer with fine pores is formed on the surface of the solid base body including the semiconductor layer, and impurity are introduced in the amorphous layer to form an impurity introducing layer.

    摘要翻译： 提供了能够有效地实现浅杂质导入的杂质的引入方法。 杂质导入方法包括：第一步骤，通过将由半导体层中的电惰性的粒子构成的等离子体与包含该半导体层的固体基体的表面反应，使半导体层的表面成为无定形，第二工序 将杂质引入固体基体的表面。 进行第一工序后，通过进行第二工序，在包含半导体层的固体基体的表面上形成具有细孔的非晶质层，在非晶层中引入杂质，形成杂质导入层。