公开(公告)号：US08632939B2

公开(公告)日：2014-01-21

申请号：US13035066

申请日：2011-02-25

申请人： Keiichi Masunaga ,  Satoshi Watanabe ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Daisuke Domon

发明人： Keiichi Masunaga ,  Satoshi Watanabe ,  Jun Hatakeyama ,  Youichi Ohsawa ,  Daisuke Domon

IPC分类号： G03F7/004 ,  G03F7/30 ,  C08F220/22 ,  G03F7/039

CPC分类号： G03F7/0045 ,  C08F20/22 ,  C08F212/14 ,  C08F220/18 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/123 ,  C08F2220/283 ,  C08F232/08 ,  C08F2220/382

摘要： A polymer comprising recurring units having a fluorinated carboxylic acid onium salt structure on a side chain is used to formulate a chemically amplified positive resist composition. When the composition is processed by lithography to form a positive pattern, the diffusion of acid in the resist film is uniform and slow, and the pattern is improved in LER.

摘要翻译： 使用包含在侧链上具有氟化羧酸鎓盐结构的重复单元的聚合物来配制化学放大的正性抗蚀剂组合物。 当通过光刻处理组合物以形成正图案时，抗蚀剂膜中的酸的扩散是均匀和缓慢的，并且图案在LER中得到改善。

公开(公告)号：US08557509B2

公开(公告)日：2013-10-15

申请号：US12662435

申请日：2010-04-16

申请人： Akinobu Tanaka ,  Keiichi Masunaga ,  Daisuke Domon ,  Satoshi Watanabe

发明人： Akinobu Tanaka ,  Keiichi Masunaga ,  Daisuke Domon ,  Satoshi Watanabe

IPC分类号： G03F7/004 ,  G03F7/028 ,  G03F7/26

CPC分类号： G03F7/0382 ,  G03F7/0045 ,  G03F7/30 ,  G03F7/322

摘要： There is disclosed a negative resist composition comprising at least (A) a base resin that is alkaline-soluble and is made alkaline-insoluble by action of an acid, and/or a combination of a base resin that is alkaline-soluble and is made alkaline-insoluble by reaction with a crosslinker by action of an acid, with a crosslinker, (B) an acid generator, and (C) a compound containing a nitrogen as a basic component, and forming a resist film having the film thickness X (nm) of 50 to 100 nm, wherein, in the case that the resist film is formed from the negative resist composition under the film-forming conditions for the pattern formation, a dissolution rate of the resist film into the alkaline developer used in the development treatment for the pattern formation is 0.0333X−1.0 (nm/second) or more and 0.0667X−1.6 (nm/second) or less. There can be a negative resist composition having excellent etching resistance and resolution and giving a good pattern profile even at the substrate's interface, a patterning process using the same, and a testing process and a preparation process of this negative resist composition.

摘要翻译： 公开了一种负性抗蚀剂组合物，其至少包含（A）碱溶性碱性树脂，并且通过酸的作用而成为碱不溶性，和/或碱溶性碱性树脂的组合 通过与交联剂的反应，通过与交联剂的反应，（B）酸产生剂和（C）含有氮作为碱性成分的化合物，并且形成具有膜厚度X（ nm）为50〜100nm，其中，在用于图案形成的成膜条件下，由抗蚀剂组合物形成抗蚀剂膜的情况下，抗蚀剂膜在显影剂中使用的碱性显影剂的溶解速度 图案形成的处理为0.0333X-1.0（nm /秒）以上且0.0667X-1.6（nm /秒）以下。 可以存在耐蚀性和分辨率优异的负光刻胶组合物，即使在基板的界面也能得到良好的图案图案，使用该抗蚀剂组合物的图案化工艺，以及该负型抗蚀剂组合物的测试方法和制备方法。

公开(公告)号：US08531769B2

公开(公告)日：2013-09-10

申请号：US12895001

申请日：2010-09-30

申请人： Satoshi Watanabe ,  Takehiro Yoshida ,  Toshiro Okamura

发明人： Satoshi Watanabe ,  Takehiro Yoshida ,  Toshiro Okamura

IPC分类号： G02B5/18 ,  G02B27/14 ,  H04J14/02

CPC分类号： G02B5/04 ,  G02B5/1895 ,  G02B27/0037

摘要： A dispersion element includes a prism having a first transmission surface and an oppositely disposed second transmission surface, and an optical element having a third transmission surface and an oppositely disposed diffraction optical surface on which a diffraction grating is arranged. The prism and the optical element are integrated into one body by cementing the first transmission surface to the third transmission surface. The third transmission surface and the diffraction optical surface are non-parallel to each other in a plane perpendicular to grooves of the diffraction grating.

摘要翻译： 色散元件包括具有第一透射面和相对设置的第二透射面的棱镜和具有第三透射面和相对设置的衍射光学表面的光学元件，衍射光栅布置在该衍射光学表面上。 棱镜和光学元件通过将第一透射表面固定到第三透射表面而被集成到一体内。 第三透射面和衍射光学面在与衍射光栅的凹槽垂直的平面中彼此不平行。

公开(公告)号：US08434908B2

公开(公告)日：2013-05-07

申请号：US13597953

申请日：2012-08-29

申请人： Satoshi Watanabe ,  Keiichi Shimizu ,  Takeshi Osada ,  Keiichi Shimizu ,  Toshiya Tanaka ,  Shigeru Osawa ,  Takeshi Hisayasu ,  Hirokazu Otake ,  Hitoshi Kawano ,  Makoto Sakai

发明人： Satoshi Watanabe ,  Keiichi Shimizu ,  Takeshi Osada ,  Keiichi Shimizu ,  Toshiya Tanaka ,  Shigeru Osawa ,  Takeshi Hisayasu ,  Hirokazu Otake ,  Hitoshi Kawano ,  Makoto Sakai

IPC分类号： F21V29/00

CPC分类号： F21V29/004 ,  F21K9/20 ,  F21V19/001 ,  F21V19/006 ,  F21V29/67 ,  F21V29/73 ,  F21V29/74 ,  F21Y2115/10 ,  H01R33/9456 ,  Y10T29/49879

摘要： A lighting fixture capable of efficiently radiating heat of a lamp device may be configured to be attached to a socket device. In some examples, by attaching the lamp device to the socket device, a cap portion of the lamp device is brought into contact with a fixture body, and pressed against and brought into close contact with the fixture body by an elastic body. Heat generated by lighting of LEDs of the lamp device is conducted from the cap portion to the fixture body and efficiently radiated.

公开(公告)号：US20130027924A1

公开(公告)日：2013-01-31

申请号：US13634648

申请日：2011-03-28

申请人： Keiichi Shimizu ,  Masao Hori ,  Koji Sato ,  Yuki Harada ,  Toshiyuki Hiraoka ,  Kenji Sugiyama ,  Masanao Hieda ,  Naoki Sugishita ,  Satoshi Watanabe ,  Masahiko Kamata ,  Katsusuke Uchino

发明人： Keiichi Shimizu ,  Masao Hori ,  Koji Sato ,  Yuki Harada ,  Toshiyuki Hiraoka ,  Kenji Sugiyama ,  Masanao Hieda ,  Naoki Sugishita ,  Satoshi Watanabe ,  Masahiko Kamata ,  Katsusuke Uchino

IPC分类号： F21S4/00

CPC分类号： F21V23/006 ,  F21K9/27 ,  F21S8/031 ,  F21V3/02 ,  F21V23/004 ,  F21V23/06 ,  F21V27/02 ,  F21V29/75 ,  F21V29/763 ,  F21V29/89 ,  F21Y2103/10 ,  F21Y2115/10

摘要： Both ends of a lamp body are mounted on sockets of an apparatus body and a feeding unit configured to feed power to LEDs is provided on the back side facing the apparatus body of the lamp body.

摘要翻译： 灯体的两端安装在设备主体的插座上，并且在面向灯体的设备主体的背面上设置有配置为向LED供电的供电单元。

公开(公告)号：US08361692B2

公开(公告)日：2013-01-29

申请号：US12662763

申请日：2010-05-03

申请人： Akinobu Tanaka ,  Keiichi Masunaga ,  Daisuke Domon ,  Satoshi Watanabe

发明人： Akinobu Tanaka ,  Keiichi Masunaga ,  Daisuke Domon ,  Satoshi Watanabe

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/26

CPC分类号： G03F7/0382

摘要： There is disclosed a negative resist composition comprising (A) a base polymer which is soluble in alkali and which is insolubilized in alkali by an action of an acid; and/or a combination of a crosslinking agent and a base polymer which is soluble in alkali and which is reacted with the crosslinking agent by an action of an acid to thereby be insolubilized in alkali, (B) an acid generator, and (C) a nitrogen-containing compound as a basic component; wherein the polymer to be used as the base polymer is: a polymer, which is obtained by polymerizing two or more kinds of monomers represented by the following general formula (1), or which is obtained by polymerizing a monomer mixture containing one or more kinds of monomers represented by the general formula (1) and one or more kinds of styrene monomers represented by the following general formula (2).

摘要翻译： 公开了一种负型抗蚀剂组合物，其包含（A）可溶于碱的碱性聚合物，其通过酸的作用在碱中不溶解; 和/或交联剂和碱性聚合物的组合，其可溶于碱，并通过酸的作用与交联剂反应，从而不溶于碱，（B）酸产生剂，和（C） 作为碱性成分的含氮化合物; 其中用作基础聚合物的聚合物是：通过聚合由以下通式（1）表示的两种或更多种单体获得的聚合物，或通过使含有一种或多种的单体混合物 的由通式（1）表示的单体和一种或多种由以下通式（2）表示的苯乙烯单体。

公开(公告)号：US20120329949A1

公开(公告)日：2012-12-27

申请号：US13581560

申请日：2010-10-12

申请人： Satoshi Watanabe ,  Takahiro Kozuka

发明人： Satoshi Watanabe ,  Takahiro Kozuka

IPC分类号： C08F16/06

CPC分类号： C08F216/06 ,  C08F6/003 ,  C08F6/008 ,  C08F6/06 ,  C08F6/16 ,  C08F6/28 ,  C08F8/12 ,  C08J11/02 ,  C08L29/04 ,  C08F118/08

摘要： Provided is a method of producing a polyvinyl alcohol resin, wherein the impurities in the resin are removed efficiently with a small amount of a washing liquid.A polyvinyl alcohol obtained after a polymerization step (step S1) and a saponification step (step S2) is washed with a washing liquid consisting of methyl acetate: 1 to 40 parts by mass, methanol: 50 to 98.9 parts by mass and water: 0.1 to 10 parts by mass in a washing step (step S3). The solid matter concentration of the slurry containing the washing liquid then is 1 to 30 mass %.

摘要翻译： 提供一种生产聚乙烯醇树脂的方法，其中用少量洗涤液有效地除去树脂中的杂质。 在聚合步骤（步骤S1）和皂化步骤（步骤S2）后获得的聚乙烯醇用乙酸甲酯洗涤液洗涤1至40质量份，甲醇：50至98.9质量份，水：0.1 在洗涤步骤中为10质量份（步骤S3）。 含有洗涤液的浆料的固体成分浓度为1〜30质量％。

公开(公告)号：US08288076B2

公开(公告)日：2012-10-16

申请号：US12789747

申请日：2010-05-28

申请人： Keiichi Masunaga ,  Satoshi Watanabe ,  Akinobu Tanaka ,  Daisuke Domon

发明人： Keiichi Masunaga ,  Satoshi Watanabe ,  Akinobu Tanaka ,  Daisuke Domon

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/0045 ,  G03F7/0392 ,  G03F7/0397

摘要： A chemically amplified resist composition comprises a polymer comprising units having polarity to impart adhesion and acid labile units adapted to turn alkali soluble under the action of acid. The polymer comprises recurring units having formula (1) wherein R1 is H, F, CH3 or CF3, Rf is H, F, CF3 or CF2CF3, A is a divalent hydrocarbon group, R2, R3 and R4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl. Recurring units containing an aromatic ring structure are present in an amount ≧60 mol % and the recurring units having formula (1) are present in an amount

摘要翻译： 化学放大抗蚀剂组合物包含含有极性赋予粘合性的单元的聚合物和适于在酸的作用下使碱溶性变成酸性不稳定单元。 聚合物包含具有式（1）的重复单元，其中R 1是H，F，CH 3或CF 3，R f是H，F，CF 3或CF 2 CF 3，A是二价烃基，R 2，R 3和R 4是烷基，烯基， 芳基，芳烷基或芳氧基烷基。 含有芳环结构的重复单元的存在量为≥60mol％，并且具有式（1）的重复单元以<5mol％的量存在。

公开(公告)号：US08273830B2

公开(公告)日：2012-09-25

申请号：US12901903

申请日：2010-10-11

申请人： Keiichi Masunaga ,  Takeru Watanabe ,  Daisuke Domon ,  Satoshi Watanabe

发明人： Keiichi Masunaga ,  Takeru Watanabe ,  Daisuke Domon ,  Satoshi Watanabe

IPC分类号： C08F8/12 ,  C08F120/16

CPC分类号： G03F7/0392 ,  C08F8/12 ,  C08F212/14 ,  C08F212/32 ,  C08F220/18 ,  C08F2220/1825 ,  C08F2220/1833 ,  C08F2220/185 ,  G03F7/0382 ,  G03F7/0397 ,  C08F220/30 ,  C08F230/08

摘要： Provided is a method of deprotecting a protected polymer, the method being capable of, in the deprotection reaction of a polymer comprising a unit structure having a phenolic hydroxyl group protected with an acyl group, deacylating the polymer in a short period of time while maintaining the other structure, and being capable of taking out the deacylated polymer while highly suppressing contamination of the deacylated polymer with a substance other than the polymer taking part in the reaction. More specifically, provided is a method of deprotecting a protected polymer comprising at least a step of dissolving in an organic solvent the protected polymer comprising at least a unit structure having a phenolic hydroxyl group protected with an acyl group and a deprotecting reagent selected from primary or secondary amine compounds each having a ClogP value of 1.00 or less with the proviso that in the secondary amine compound, neither of the two carbon atoms coupled to the nitrogen atom of the amino group is tertiary. The primary or secondary amine compounds are each represented preferably by HNR12-nR2n (1).

摘要翻译： 提供了一种使被保护的聚合物脱保护的方法，该方法能够在包含具有用酰基保护的酚羟基的单元结构的聚合物的脱保护反应中，在短时间内对聚合物进行脱酰，同时保持 并且能够取出脱酰基聚合物，同时高度抑制除了参与反应的聚合物以外的物质对脱酰基聚合物的污染。 更具体地说，提供一种使被保护的聚合物脱保护的方法，该方法至少包括在有机溶剂中溶解至少包含具有被酰基保护的酚羟基的单元结构的保护的聚合物和选自伯或仲基的去保护试剂 仲胺化合物各自具有1.00以下的ClogP值，条件是在仲胺化合物中，与氨基的氮原子偶联的两个碳原子都不是三级。 伯胺或仲胺化合物各自优选由HNR 12 -nR 2 n（1）表示。

公开(公告)号：US08252518B2

公开(公告)日：2012-08-28

申请号：US12591540

申请日：2009-11-23

申请人： Akinobu Tanaka ,  Takanobu Takeda ,  Satoshi Watanabe

发明人： Akinobu Tanaka ,  Takanobu Takeda ,  Satoshi Watanabe

IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/09

CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392

摘要： There is disclosed a chemically amplified positive resist composition to form a chemically amplified resist film to be used in a lithography, wherein the chemically amplified positive resist composition comprises at least, (A) a base resin, insoluble or poorly soluble in an alkaline solution, having a repeating unit whose phenolic ydroxyl group is protected by a tertiary alkyl group, while soluble in an alkaline solution when the tertiary alkyl group is removed; (B) an acid generator; (C) a basic component; and (D) an organic solvent, and a solid component concentration is controlled so that the chemically amplified resist film having the film thickness of 10 to 100 nm is obtained by a spin coating method. There can be provided, in a lithography, a chemically amplified positive resist composition giving a high resolution with a suppressed LER deterioration caused by film-thinning at the time of forming a chemically amplified resist film with the film thickness of 10 to 100 nm, and a resist patterning process using the same.

摘要翻译： 公开了一种化学放大的正性抗蚀剂组合物，以形成用于光刻的化学放大的抗蚀剂膜，其中化学放大的正性抗蚀剂组合物至少包含（A）不溶于或难溶于碱性溶液的基础树脂， 具有酚羟基被叔烷基保护的重复单元，当叔烷基被除去时可溶于碱性溶液; （B）酸发生剂; （C）基本组成部分; 和（D）有机溶剂，并且通过旋涂法获得固体成分浓度，从而得到膜厚为10〜100nm的化学放大型抗蚀剂膜。 在平版印刷法中，可以提供化学放大的正性抗蚀剂组合物，其在形成具有10至100nm的膜厚度的化学放大型抗蚀剂膜时产生具有抑制的由薄膜变薄引起的LER劣化的高分辨率，以及 使用其的抗蚀剂图案化工艺。