公开(公告)号：US07821604B2

公开(公告)日：2010-10-26

申请号：US11375072

申请日：2006-03-15

申请人： Yoshikazu Yoshimoto

发明人： Yoshikazu Yoshimoto

IPC分类号： G02F1/1333 ,  G02F1/1343 ,  H01L31/00 ,  H01L27/14

CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/1292

摘要： The present invention provides a liquid crystal display device using a thin-film transistor, and the invention also provides a method for manufacturing the liquid crystal display device. In openings of a first light transmission type photosensitive resin formed on an insulating substrate, a gate electrode, a source line, and a pixel contact layer are prepared. On these components, a gate insulator, a semiconductor layer, an ohmic contact layer (n+ semiconductor layer) and a protective film are prepared. Further, in openings of a second light transmission type photosensitive resin, a source electrode, a drain electrode, and a pixel electrode are prepared. Also, the crossing portion connecting line formed at the opening of the second light transmission type photosensitive resin is, similarly to the source line or the gate line, made of baked silver produced by baking an ink containing silver fine particles plotted by ink jet process.

摘要翻译： 本发明提供一种使用薄膜晶体管的液晶显示装置，本发明还提供一种液晶显示装置的制造方法。 在形成在绝缘基板上的第一透光型光敏树脂的开口中，准备栅电极，源极线和像素接触层。 在这些部件上，制备栅极绝缘体，半导体层，欧姆接触层（n +半导体层）和保护膜。 此外，在第二透光型光敏树脂的开口中，准备了源电极，漏电极和像素电极。 而且，形成在第二透光型感光性树脂的开口处的交叉部连接线与源极线或栅极线相同，由通过喷墨喷射法绘制的含有银微粒的油墨而制成的烘烤银制成。

公开(公告)号：US07626650B2

公开(公告)日：2009-12-01

申请号：US11859022

申请日：2007-09-21

申请人： Yoshikazu Yoshimoto

发明人： Yoshikazu Yoshimoto

IPC分类号： G02F1/136

CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1292

摘要： The present invention provides a technique, by which it is possible to obtain a liquid crystal display panel with high precision by forming very fine pattern of electroconductive film through linking of the areas with different widths, and it is also possible to reduce the number of processes. Like a wide-width electroconductive film and a narrow-width electroconductive film, most of the surface of an underlying film UW of a thin-film transistor substrate SUB1 is turned to lyophobic portion RA, and only the narrow-width gate electrode forming area is turned to lyophilic portion FA. An electroconductive ink is dropped evenly to the gate electrode forming area of the lyophilic portion FA, and a wide-width gate line is formed on the gate line forming area GLA of lyophobic portion RA by direct drawing of IJ. The film thickness of the ink films on the gate electrode forming area GTA and the gate line forming area GLA are controlled by adjusting a dropping amount of the ink on each area, and film thicknesses of these areas obtained on the liquid crystal display panel after baking are adjusted to be equal with each other.

摘要翻译： 本发明提供一种技术，通过使不同宽度的区域的连接形成非常精细的导电膜图案，可以高精度地获得液晶显示面板，并且还可以减少处理次数 。 像宽宽度的导电膜和窄宽度的导电膜一样，薄膜晶体管衬底SUB1的基底膜UW的大部分表面转向疏液部分RA，只有窄宽度的栅电极形成区域是 转向亲液部分FA。 导电油墨均匀地滴落到亲液部分FA的栅电极形成区域，通过直接拉伸IJ在疏液部分RA的栅极线形成区域GLA上形成宽宽度的栅极线。 通过调整每个区域上的墨水的滴落量以及烘烤后在液晶显示面板上获得的这些区域的膜厚度来控制栅极形成区域GTA和栅极线形成区域GLA上的墨膜的膜厚度 被调整为相等。

公开(公告)号：US07517735B2

公开(公告)日：2009-04-14

申请号：US11206784

申请日：2005-08-19

申请人： Yoshikazu Yoshimoto ,  Yoichi Noda ,  Atsushi Denda ,  Toshimitsu Hirai ,  Shinri Sakai

发明人： Yoshikazu Yoshimoto ,  Yoichi Noda ,  Atsushi Denda ,  Toshimitsu Hirai ,  Shinri Sakai

IPC分类号： H01L21/82

CPC分类号： H01L27/12 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/124 ,  H01L27/1292

摘要： A method of manufacturing an active matrix substrate includes forming wiring lines each having a matrix pattern on a substrate such that a wiring line extending in any one of a first direction and a second direction is separated from another wiring line at an intersection; forming a laminated portion composed of an insulating layer and a semiconductor layer on a portion of the wiring line and the intersection; and forming a conductive layer electrically connecting the separated wiring line, and a pixel electrode electrically connected to the wiring line via the semiconductor layer on the laminated portion.

摘要翻译： 有源矩阵基板的制造方法包括在基板上形成各自具有矩阵图案的布线，使得沿第一方向和第二方向中的任一方向延伸的布线在交叉点处与另一布线分离; 在所述布线和所述交点的一部分上形成由绝缘层和半导体层构成的层叠部; 以及形成导电层，电连接所述分离的布线，以及通过所述层叠部分上的所述半导体层电连接到所述布线的像素电极。

公开(公告)号：US5049409A

公开(公告)日：1991-09-17

申请号：US344961

申请日：1989-04-28

申请人： Yoshikazu Yoshimoto ,  Tomonari Suzuki ,  Yoshiyuki Higashigaki ,  Shigeo Nakajima ,  Toshio Inoguchi

发明人： Yoshikazu Yoshimoto ,  Tomonari Suzuki ,  Yoshiyuki Higashigaki ,  Shigeo Nakajima ,  Toshio Inoguchi

IPC分类号： C01B31/00 ,  C23C16/26 ,  C30B25/02

CPC分类号： C01B31/0415 ,  C23C16/26 ,  C30B25/02 ,  C30B29/04

摘要： A method for preparing a graphite intercalation compound having a metal or a metal compound inserted between adjacent graphite layers, comprising simultaneously introducing a mixture of a vapor of both a hydrocarbon compound and an organo metallic compound together with a carrier gas into a reactor, and decomposing said hydrocarbon compound and said organo metallic compound on a single-crystalline substrate at a relatively low temperature.

公开(公告)号：US5030529A

公开(公告)日：1991-07-09

申请号：US568355

申请日：1990-08-15

申请人： Hiroshi Wada ,  Yoshikazu Yoshimoto ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Hiroshi Wada ,  Yoshikazu Yoshimoto ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： C23C16/26 ,  H01M4/587 ,  H01M4/96 ,  H01M10/05

CPC分类号： H01M4/587 ,  C23C16/26 ,  H01M4/366 ,  H01M4/96 ,  H01M4/1393

摘要： A carbon electrode including a first carbon layer containing an iron family element formed by vapor pyrolytic deposition of a hydrocarbon compound and a second carbon layer free from any iron family element formed over the surface of said first carbon layer, which is useful in a secondary lithium battery and makes its capacity greater and self-discharge ratio lower.

公开(公告)号：US4978600A

公开(公告)日：1990-12-18

申请号：US362505

申请日：1989-06-07

申请人： Tomonari Suzuki ,  Hiroshi Wada ,  Yoshikazu Yoshimoto ,  Masaru Yoshida ,  Shigeo Nakajima

发明人： Tomonari Suzuki ,  Hiroshi Wada ,  Yoshikazu Yoshimoto ,  Masaru Yoshida ,  Shigeo Nakajima

IPC分类号： C23C16/26 ,  H01M4/58 ,  H01M4/587 ,  H01M4/96

CPC分类号： H01M4/587 ,  C23C16/26 ,  H01M4/133 ,  H01M4/96 ,  Y02P70/54

摘要： An electrode comprising a graphite composition as an active material is disclosed wherein the graphite composition is composed of high-crystalline graphite having interlayer spacings in the range of 0.3354 to 0.3400 nm and low-crystalline graphite having interlayer spacings in the range of 0.343 to 0.355 nm.

公开(公告)号：US07816158B2

公开(公告)日：2010-10-19

申请号：US11452978

申请日：2006-06-15

申请人： Yoshikazu Yoshimoto

发明人： Yoshikazu Yoshimoto

IPC分类号： H01L29/04

CPC分类号： G02F1/136286 ,  G02F1/1368 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1292

摘要： The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB1, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.

公开(公告)号：US20090213289A1

公开(公告)日：2009-08-27

申请号：US12369220

申请日：2009-02-11

申请人： Yoshikazu Yoshimoto

发明人： Yoshikazu Yoshimoto

IPC分类号： G02F1/1368

CPC分类号： G02F1/136286 ,  G02F1/1368 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1292

摘要： The present invention provides a liquid crystal display device to be operated at high speed and with high precision by improving performance of a thin-film transistor without increasing cross capacity of gate lines and data lines. On an upper layer of a gate insulator GI at an intersection of gate lines GL and data lines DL to be prepared on an active matrix substrate SUB1, which makes up a liquid crystal display panel of a liquid crystal display device, an insulating material with low dielectric constant is dropped by ink jet coating method to prepare another insulator LDP in order to improve performance characteristics of the thin-film transistor to be prepared on a silicon semiconductor layer SI without increasing cross capacity on said intersection.

摘要翻译： 本发明提供了一种通过提高薄膜晶体管的性能而不增加栅极线和数据线的交叉容量而以高速和高精度操作的液晶显示装置。 在构成液晶显示装置的液晶显示面板的有源矩阵基板SUB1上准备的栅极线GL与数据线DL的交叉处的栅极绝缘体GI的上层，具有低的绝缘材料 通过喷墨涂布法降低介电常数，以制备另一种绝缘体LDP，以便改善要在硅半导体层SI上制备的薄膜晶体管的性能特性，而不会增加所述交叉点上的交叉容量。

公开(公告)号：US20080074573A1

公开(公告)日：2008-03-27

申请号：US11859022

申请日：2007-09-21

申请人： Yoshikazu Yoshimoto

发明人： Yoshikazu Yoshimoto

IPC分类号： G02F1/136 ,  H01L21/02

CPC分类号： G02F1/136286 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1292

摘要： The present invention provides a technique, by which it is possible to obtain a liquid crystal display panel with high precision by forming very fine pattern of electroconductive film through linking of the areas with different widths, and it is also possible to reduce the number of processes. Like a wide-width electroconductive film and a narrow-width electroconductive film, most of the surface of an underlying film UW of a thin-film transistor substrate SUB1 is turned to lyophobic portion RA, and only the narrow-width gate electrode forming area is turned to lyophilic portion FA. An electroconductive ink is dropped evenly to the gate electrode forming area of the lyophilic portion FA, and a wide-width gate line is formed on the gate line forming area GLA of lyophobic portion RA by direct drawing of IJ. The film thickness of the ink films on the gate electrode forming area GTA and the gate line forming area GLA are controlled by adjusting a dropping amount of the ink on each area, and film thicknesses of these areas obtained on the liquid crystal display panel after baking are adjusted to be equal with each other.

摘要翻译： 本发明提供一种技术，通过使不同宽度的区域的连接形成非常精细的导电膜图案，可以高精度地获得液晶显示面板，并且还可以减少处理次数 。 像宽宽度的导电膜和窄宽度的导电膜一样，薄膜晶体管衬底SUB 1的基底膜UW的大部分表面被转到疏液部分RA，而仅窄栅极电极形成区域 转向亲液部分FA。 导电油墨均匀地滴落到亲液部分FA的栅电极形成区域，通过直接拉伸IJ在疏液部分RA的栅极线形成区域GLA上形成宽宽度的栅极线。 通过调整每个区域上的墨水的滴落量以及烘烤后在液晶显示面板上获得的这些区域的膜厚度来控制栅极形成区域GTA和栅极线形成区域GLA上的墨膜的膜厚度 被调整为相等。

公开(公告)号：US20080062344A1

公开(公告)日：2008-03-13

申请号：US11850743

申请日：2007-09-06

申请人： Yoshikazu Yoshimoto

发明人： Yoshikazu Yoshimoto

IPC分类号： G02F1/136 ,  H01L21/00

CPC分类号： G02F1/136286 ,  G02F2001/136231 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/1292 ,  H01L29/458

摘要： The present invention discloses a method for manufacturing a liquid crystal display panel and said liquid crystal display panel by simplifying the manufacturing process and by manufacturing the liquid crystal display panel at lower cost. The ink jet direct drawing method is introduced in the process or in several processes to manufacture a source electrode SD1 and a drain electrode SD2 including gate lines, gate electrodes and data lines of the liquid crystal display panel, and ink jet direct drawing process is used for the formation of an active layer island, which has a laminated layer comprising a silicon semiconductor layer SI and an n+ contact layer NS.

摘要翻译： 本发明通过简化制造工艺和以较低的成本制造液晶显示面板，公开了一种用于制造液晶显示面板和液晶显示面板的方法。 在制造包括液晶显示面板的栅极线，栅电极和数据线的源电极SD1和漏电极SD2的工艺或者几个工艺中引入喷墨直接拉制法，以及喷墨直接拉伸工艺 用于形成有源层岛，其具有包括硅半导体层SI和n + +接触层NS的层压层。