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11.发明授权Method for manufacturing a semiconductor device having a III-V nitride semiconductor 有权具有III-V族氮化物半导体的半导体器件的制造方法公开(公告)号：US07910464B2
公开(公告)日：2011-03-22
申请号：US12695759
申请日：2010-01-28
CPC分类号： H01L29/66871 , H01L21/28 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787 , H01L29/8128
摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.
摘要翻译： 本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。 深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。
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12.发明申请公开(公告)号：US20090050937A1
公开(公告)日：2009-02-26
申请号：US12257807
申请日：2008-10-24
IPC分类号： H01L29/778
CPC分类号： H01L29/66871 , H01L21/28 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787 , H01L29/8128
摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.
摘要翻译： 本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。 深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。
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公开(公告)号：US20060284318A1
公开(公告)日：2006-12-21
申请号：US11436722
申请日：2006-05-19
IPC分类号： H01L23/52
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462
摘要： According to a method for fabricating a semiconductor device, a first semiconductor layer made of a first nitride semiconductor is formed over a substrate. Thereafter, a mask film covering part of the upper surface of the first semiconductor layer is selectively formed on the first semiconductor layer. A multilayer film, in which second and third nitride semiconductors having different band gaps are stacked, is selectively formed on the first semiconductor layer with the mask film used as a formation mask. On the multilayer film, an ohmic electrode is formed.
摘要翻译： 根据半导体器件的制造方法，在基板上形成由第一氮化物半导体构成的第一半导体层。 此后，在第一半导体层上选择性地形成覆盖第一半导体层的上表面的一部分的掩模膜。 选择性地在第一半导体层上形成具有不同带隙的第二和第三氮化物半导体的多层膜，其中掩模膜用作形成掩模。 在多层膜上形成欧姆电极。
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14.发明申请公开(公告)号：US20050139838A1
公开(公告)日：2005-06-30
申请号：US11019768
申请日：2004-12-23
IPC分类号： H01L21/28 , H01L21/335 , H01L21/338 , H01L29/20 , H01L29/423 , H01L29/778 , H01L29/812 , H01L29/04
CPC分类号： H01L29/66871 , H01L21/28 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/7787 , H01L29/8128
摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.
摘要翻译： 本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。 深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。
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公开(公告)号：US20070254419A1
公开(公告)日：2007-11-01
申请号：US11819198
申请日：2007-06-26
IPC分类号： H01L21/338
CPC分类号： H01L29/7787 , H01L27/14609 , H01L27/1463 , H01L27/14636 , H01L27/14656 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.
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公开(公告)号：US07247891B2
公开(公告)日：2007-07-24
申请号：US10970026
申请日：2004-10-22
IPC分类号： H01L29/739
CPC分类号： H01L29/7787 , H01L27/14609 , H01L27/1463 , H01L27/14636 , H01L27/14656 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.
摘要翻译： 半导体器件具有第一氮化物半导体层，形成在第一氮化物半导体层上的第二氮化物半导体层，并具有在第一氮化物半导体层的上部产生二维电子气层的组成， 电极，其选择性地形成在第二氮化物半导体层上。 第二氮化物半导体层包括具有至少一个倾斜部分的接触区域，其底部或壁表面朝向第一氮化物半导体层的上表面倾斜并且限定凹陷的横截面构型。 电极形成在接触区域上。
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公开(公告)号：US20050087763A1
公开(公告)日：2005-04-28
申请号：US10970026
申请日：2004-10-22
IPC分类号： H01L21/331 , H01L21/335 , H01L21/338 , H01L27/146 , H01L29/20 , H01L29/737 , H01L29/778 , H01L29/812 , H01L31/0328 , H01S5/042 , H01S5/323 , H01S5/343
CPC分类号： H01L29/7787 , H01L27/14609 , H01L27/1463 , H01L27/14636 , H01L27/14656 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.
摘要翻译： 半导体器件具有第一氮化物半导体层，形成在第一氮化物半导体层上的第二氮化物半导体层，并具有在第一氮化物半导体层的上部产生二维电子气层的组成， 电极，其选择性地形成在第二氮化物半导体层上。 第二氮化物半导体层包括具有至少一个倾斜部分的接触区域，其底部或壁表面朝向第一氮化物半导体层的上表面倾斜并且限定凹陷的横截面构型。 电极形成在接触区域上。
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公开(公告)号：US07859087B2
公开(公告)日：2010-12-28
申请号：US12637240
申请日：2009-12-14
申请人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tomohiro Murata , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L23/58
CPC分类号： H01L29/7787 , H01L23/367 , H01L23/3677 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
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公开(公告)号：US20100090250A1
公开(公告)日：2010-04-15
申请号：US12637240
申请日：2009-12-14
申请人： Tomohiro MURATA , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tomohiro MURATA , Hiroaki Ueno , Hidetoshi Ishida , Tetsuzo Ueda , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/205 , H01L29/772 , H01L29/06
CPC分类号： H01L29/7787 , H01L23/367 , H01L23/3677 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.
摘要翻译： 半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。 钝化膜包括由氮化铝制成的第一子膜。
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公开(公告)号：US20110233712A1
公开(公告)日：2011-09-29
申请号：US13156078
申请日：2011-06-08
IPC分类号： H01L29/47
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/66462
摘要： According to a method for fabricating a semiconductor device, a first semiconductor layer made of a first nitride semiconductor is formed over a substrate. Thereafter, a mask film covering part of the upper surface of the first semiconductor layer is selectively formed on the first semiconductor layer. A multilayer film, in which second and third nitride semiconductors having different band gaps are stacked, is selectively formed on the first semiconductor layer with the mask film used as a formation mask. On the multilayer film, an ohmic electrode is formed.
摘要翻译： 根据半导体器件的制造方法，在基板上形成由第一氮化物半导体构成的第一半导体层。 此后，在第一半导体层上选择性地形成覆盖第一半导体层的上表面的一部分的掩模膜。 选择性地在第一半导体层上形成具有不同带隙的第二和第三氮化物半导体的多层膜，其中掩模膜用作形成掩模。 在多层膜上形成欧姆电极。
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