公开(公告)号：US20130100124A1

公开(公告)日：2013-04-25

申请号：US13648774

申请日：2012-10-10

Applicant: LG Electronics Inc.

Inventor： Yongil KIM ,  Wonkee Ahn ,  Kyungsoo Son ,  Byungsoo Kang

IPC: G06T15/00

CPC classification number: H04N13/31 ,  G02B27/2214 ,  G02F1/133615 ,  G02F1/1347 ,  G02F2201/07 ,  H04M1/0266 ,  H04N2213/001

Abstract: A display module includes a first panel configured to implement an image, a second panel having barriers for implementing a three-dimensional image, the second panel covering the first panel, a resin layer filling a gap between the first and second panels, and a support unit formed adjacent to at least one end of the resin layer to maintain the gap, the support unit configured to support the second panel.

Abstract translation: 显示模块包括被配置为实现图像的第一面板，具有用于实现三维图像的屏障的第二面板，覆盖第一面板的第二面板，填充第一面板和第二面板之间的间隙的树脂层，以及支撑体 单元，其形成在所述树脂层的至少一端附近以保持所述间隙，所述支撑单元构造成支撑所述第二面板。

公开(公告)号：US08401344B2

公开(公告)日：2013-03-19

申请号：US12811565

申请日：2008-12-26

Applicant: Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

Inventor： Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

IPC: G02F1/035

CPC classification number: G02F1/025 ,  G02F2201/07

Abstract: A semiconductor optical modulator that includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.

Abstract translation: 一种半导体光调制器，包括具有芯层，第一覆层，第二覆层和阻挡层的叠层结构的第一半导体光波导，第一覆层和第二覆层设置在第一半导体光波导的下方和上方 所述阻挡层插入在所述第二覆盖层和所述芯层之间; 具有层叠结构的第二半导体光波导，其中所述第二包层具有在所述第一半导体光波导的层叠结构中在层叠方向上局部穿透n型半导体的p型半导体; 连接到第一半导体光波导的第一包层的第一电极; 以及第二电极，电连接第一半导体光波导的第二包层和第二半导体光波导的第二包层的p型半导体。

公开(公告)号：US20130039612A1

公开(公告)日：2013-02-14

申请号：US13538094

申请日：2012-06-29

Applicant: Masaki Sugiyama ,  Yoshihiko Yoshida ,  Yoshinobu Kubota

Inventor： Masaki Sugiyama ,  Yoshihiko Yoshida ,  Yoshinobu Kubota

IPC: G02F1/035

CPC classification number: G02F1/0356 ,  G02F1/2255 ,  G02F2201/07 ,  G02F2202/105 ,  G02F2203/21

Abstract: An optical modulator comprises a substrate having an electro-optical effect, an optical waveguide formed in the substrate, a buffer layer provided above the optical waveguide, a semiconductor film provided above the buffer layer and having an aperture at a top of the optical waveguide, and an electrode provided above the buffer layer and electrically coupled to the semiconductor film.

Abstract translation: 光调制器包括具有电光效应的基板，在基板中形成的光波导，设置在光波导上方的缓冲层，设置在缓冲层上方并在光波导顶部具有孔的半导体膜， 以及设置在缓冲层上方并电耦合到半导体膜的电极。

公开(公告)号：US07995157B2

公开(公告)日：2011-08-09

申请号：US11641702

申请日：2006-12-20

Applicant: Moo-Hyoung Song ,  Sung-Jin Hong

Inventor： Moo-Hyoung Song ,  Sung-Jin Hong

IPC: G02F1/1333 ,  G02F1/1343

CPC classification number: G02F1/136286 ,  G02F2201/07 ,  H01L27/124 ,  H01L27/1244

Abstract: An array substrate for a liquid crystal display device, includes: a gate line and a data line on a substrate, the data line crossing the gate line to define a pixel region; an insulating layer between the gate line and the data line; a switching element adjacent to a crossing of the gate line and the data line; a pixel electrode connected to the switching element, the pixel electrode disposed in the pixel region; and a first buffer pattern at a first side of one of the gate line and the date line and overlapped with the other one of the gate line and the date line, the first buffer pattern being disposed at the same layer as the one of the gate line and the date line.

Abstract translation: 一种液晶显示装置的阵列基板，包括：栅极线和基板上的数据线，所述数据线与所述栅极线交叉以限定像素区域; 栅极线与数据线之间的绝缘层; 与栅极线和数据线的交叉点相邻的开关元件; 连接到开关元件的像素电极，设置在像素区域中的像素电极; 以及在栅极线和日期线之一的第一侧的第一缓冲图案，并且与栅极线和日期线中的另一个重叠，第一缓冲图案设置在与栅极线和日期线之一相同的层 行和日期行。

公开(公告)号：US20110170170A1

公开(公告)日：2011-07-14

申请号：US13120313

申请日：2009-09-22

Applicant: Joseph Jeremy Boote

Inventor： Joseph Jeremy Boote

IPC: G02F1/167 ,  G02F1/01 ,  H05K13/00

CPC classification number: E06B9/24 ,  B32B17/10036 ,  B32B17/10174 ,  B32B17/10761 ,  B32B17/10788 ,  E06B2009/2464 ,  G02F1/153 ,  G02F1/172 ,  G02F2201/07 ,  G02F2201/12 ,  Y10T29/49002

Abstract: A switchable film assembly having remote electrical connections comprises an active layer between first and second electrically conductive layers. The active layer has an optical transmission which changes upon projecting an electric field therethrough. An electrical connection connects the film to a power supply and can comprise a remote electrical connector region provided remote to the first and second electrically conductive layers, such upon connecting the film assembly to the power supply, an electrical field may be projected through at least a portion of the switchable film assembly thereby changing the optical transmission of the active layer.

Abstract translation: 具有远程电连接的可切换膜组件包括在第一和第二导电层之间的有源层。 有源层具有通过投射电场而改变的光传输。 电连接将膜连接到电源，并且可以包括远离第一和第二导电层设置的远程电连接器区域，例如在将膜组件连接到电源时，电场可以通过至少一个 可切换膜组件的一部分，从而改变有源层的光传输。

公开(公告)号：US20100307678A1

公开(公告)日：2010-12-09

申请号：US12665635

申请日：2008-02-25

Applicant: Hideki Yokoi

Inventor： Hideki Yokoi

IPC: B32B37/14

CPC classification number: G02B6/132 ,  G02F1/0955 ,  G02F2201/063 ,  G02F2201/07

Abstract: A novel technique is provided, which can secure sufficient adhesion of an Si layer and a magneto-optical material layer while avoiding occurrence of cracks when fabricating an optical nonreciprocal element by bonding the Si layer on which a rib waveguide is formed, and the magneto-optical material layer. The method includes forming a waveguide on the Si layer of an SOI substrate which is a first substrate, forming a first thin-film buffer layer on the aforesaid waveguide, forming a second thin-film buffer layer on an magneto-optical material layer deposited on a second substrate by using a same material as that of the aforesaid first thin-film buffer layer, and bonding the aforesaid first thin-film buffer layer and the aforesaid second thin-film buffer layer in placement where a light propagating in the aforesaid waveguide can be caused to generate nonreciprocal phase change by the aforesaid magneto-optical material layer.

Abstract translation: 提供了一种新技术，其可以确保Si层和磁光材料层的充分粘附，同时避免当通过结合形成有肋条波导的Si层制造光学非可逆元件时产生裂纹， 光学材料层。 该方法包括在作为第一衬底的SOI衬底的Si层上形成波导，在上述波导上形成第一薄膜缓冲层，在沉积在...上的磁光材料层上形成第二薄膜缓冲层 通过使用与上述第一薄膜缓冲层相同的材料的第二基板，并且将上述第一薄膜缓冲层和上述第二薄膜缓冲层粘合在布置在上述波导中传播的光的位置 通过上述磁光材料层产生不可逆相变。

公开(公告)号：US20090323161A1

公开(公告)日：2009-12-31

申请号：US12165598

申请日：2008-06-30

Applicant: Eugene Anthony Fuss ,  Roger W. Phillips ,  Paul P. Nguyen

Inventor： Eugene Anthony Fuss ,  Roger W. Phillips ,  Paul P. Nguyen

IPC: G02F1/153

CPC classification number: G02F1/1533 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1555 ,  G02F2201/07

Abstract: One exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and an electrochromic layer. Another exemplary embodiment of an electrochromic device comprises a tantalum-nitride ion-blocking layer formed between a transparent conductive layer and a counter electrode. Yet another exemplary embodiment of an electrochromic device comprises a type-2 ion-blocking layer formed on a transparent conductive layer as an ion diffusion barrier overlayer. Still another exemplary embodiment of an electrochromic device comprises a transparent conductive layer formed from tantalum nitride.

Abstract translation: 电致变色器件的一个示例性实施例包括形成在透明导电层和电致变色层之间的氮化钽 - 氮化物离子阻挡层。 电致变色器件的另一示例性实施例包括在透明导电层和对电极之间形成的氮化钽 - 氮化物离子阻挡层。 电致变色器件的另一示例性实施例包括形成在作为离子扩散阻挡层的透明导电层上的2型离子阻挡层。 电致变色器件的另一示例性实施例包括由氮化钽形成的透明导电层。

公开(公告)号：US07567326B2

公开(公告)日：2009-07-28

申请号：US10985908

申请日：2004-11-12

Applicant: Yun-Bok Lee

Inventor： Yun-Bok Lee

IPC: G02F1/1343 ,  G02F1/1345

CPC classification number: G02F1/134363 ,  G02F1/133711 ,  G02F1/1368 ,  G02F2201/07

Abstract: In a method of forming an array substrate for in-plane switching liquid crystal display device a first metal layer is formed on a substrate and then patterned using a first mask so as to form a gate line having a gate electrode and a common line having a plurality of common electrodes. A gate insulation layer is formed on the substrate to cover the patterned first metal layer. A semiconductor layer is formed on the gate insulation layer using a second mask, wherein the semiconductor layer includes an active layer of pure amorphous silicon and an ohmic contact layer of impurity-doped amorphous silicon. A second metal layer is formed on the gate insulation layer to cover the semiconductor layer and then patterned using a third mask to form a data line having a source electrode, a pixel connecting line having a plurality of pixel electrodes, and a drain electrode that is spaced apart from the source electrode. A channel is formed by etching a portion of the ohmic contact layer between the source and drain electrodes. An alignment layer is formed over the substrate to cover the patterned second metal layer. The substrate having the alignment layer and the source and drain electrode is then thermal-treated in a furnace to cure the alignment layer and to anneal a thin film transistor.

Abstract translation: 在形成面内切换液晶显示装置的阵列基板的方法中，在基板上形成第一金属层，然后使用第一掩模进行图案化，以形成具有栅电极和公共线的栅线 多个公共电极。 在基板上形成栅极绝缘层以覆盖图案化的第一金属层。 使用第二掩模在栅绝缘层上形成半导体层，其中半导体层包括纯非晶硅的有源层和杂质掺杂非晶硅的欧姆接触层。 在栅绝缘层上形成第二金属层以覆盖半导体层，然后使用第三掩模进行图案化，以形成具有源电极，具有多个像素电极的像素连接线和具有多个像素电极的漏电极的数据线， 与源电极间隔开。 通过蚀刻源极和漏极之间的欧姆接触层的一部分形成通道。 在衬底上形成取向层以覆盖图案化的第二金属层。 然后将具有取向层和源极和漏极的衬底在炉中热处理以固化取向层并退火薄膜晶体管。

公开(公告)号：US20090034904A1

公开(公告)日：2009-02-05

申请号：US11817312

申请日：2006-03-08

Applicant: Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

Inventor： Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

IPC: G02B6/12 ,  H01L31/0264

CPC classification number: G02F1/025 ,  G02F2201/07 ,  G02F2202/102

Abstract: There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (11), a semiconductor core layer (13) having an electro-optic effect, a p-InAlAs layer (15), and an n-type InP clad layer (16). An electron affinity of the p-InAlAs layer (15) is smaller than an electron affinity of the n-type InP clad layer (16). In the waveguide structure having such a configuration, a non-dope InP clad layer (12) and a non-dope InP clad layer (14) may be respectively provided between the n-type InP clad layer (11) and the semiconductor core layer (13), and between the semiconductor core layer (13) and the p-InAlAs layer (15).

Abstract translation: 提供了一种能够执行稳定操作并且具有优异的电场电压特性的半导体光调制器，同时具有n-i-n结构的半导体光调制器的特性。 半导体光调制器包括通过依次生长n型InP包覆层（11），具有电光效应的半导体芯层（13），p-InAlAs层（15）和 n型InP覆层（16）。 p-InAlAs层（15）的电子亲和力小于n型InP包覆层（16）的电子亲和力。 在具有这种结构的波导结构中，非掺杂InP覆盖层（12）和非掺杂InP覆盖层（14）可以分别设置在n型InP覆盖层（11）和半导体芯层 （13），以及半导体芯层（13）和p-InAlAs层（15）之间。

公开(公告)号：US07343055B2

公开(公告)日：2008-03-11

申请号：US11625535

申请日：2007-01-22

Applicant: Gregory J. McBrien ,  Karl Kissa ,  Glen Drake ,  Kate Versprille

Inventor： Gregory J. McBrien ,  Karl Kissa ,  Glen Drake ,  Kate Versprille

IPC: G02F1/035 ,  G02F1/03

CPC classification number: G02F1/0356 ,  G02F1/2255 ,  G02F2201/07 ,  G02F2203/21

Abstract: The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The buried bias electrodes are also advantageous in controlling charge build-up with consequent improvement in drift characteristics. The bias electrode material is useful for routing bias signals inside the device, in particular to external terminals, as well as forming encapsulating layers to permit operation in non-hermetic environments, thereby lowering manufacturing costs. Embodiments using both X-cut and Z-cut lithium niobate (LiNbO3) are presented. For the latter, the bias electrodes can be split along their axis to avoid optical losses.

Abstract translation: 本发明涉及一种电光调制器结构，其包含埋在该装置内的附加一组偏置电极，用于施加偏压以设定工作点。 因此，用于调制输入光信号的RF电极可以以零直流偏压工作，减少电极腐蚀以及可能存在于非密封封装中的电流和其他影响。 掩埋偏置电极在控制电荷积聚方面也是有利的，随之而来的是漂移特性的改善。 偏置电极材料可用于布置装置内的偏置信号，特别是外部端子，以及形成封装层，以允许在非密封环境中操作，从而降低制造成本。 提出了使用X切割和Z切割的铌酸锂（LiNbO 3 3）的实施例。 对于后者，偏置电极可以沿其轴线分开以避免光损耗。