公开(公告)号：US08232711B2

公开(公告)日：2012-07-31

申请号：US12597035

申请日：2008-04-23

Applicant: Akira Kojima ,  Hideyuki Ohyi

Inventor： Akira Kojima ,  Hideyuki Ohyi

IPC: H01J1/02

CPC classification number: H01J37/073 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/312 ,  H01J37/06 ,  H01J37/3174 ,  H01J2201/312 ,  H01J2237/0635

Abstract: A surface emission type electron source including a first electrode having a planar form, a second electrode having a planar form facing the first electrode, an electron passage layer disposed between the first electrode and the second electrode, an insulator or semiconductor layer between the second electrode and the electron passage layer, and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are made of silicon and spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. Protrusions protruding toward leading ends of the quantum wires are formed on a back surface of the second electrode at positions corresponding to the quantum wires.

Abstract translation: 一种表面发射型电子源，包括具有平面形状的第一电极，具有面向第一电极的平面形状的第二电极，设置在第一电极和第二电极之间的电子通过层，位于第二电极之间的绝缘体或半导体层 和电子通过层，以及构成为向第二电极和第一电极施加电压的电源部。 电子通过层包括从第一电极延伸到第二电极的第一方向上的多个量子线。 量子线由硅制成并且以预定间隔彼此间隔开，电子从第二电极的前表面发射。 在与量子线对应的位置处，在第二电极的背面上形成向量子线的前端突出的突起。

公开(公告)号：US07994698B2

公开(公告)日：2011-08-09

申请号：US12225798

申请日：2007-03-26

Applicant: Ryota Tanaka ,  Nobuyasu Negishi ,  Kazuto Sakemura ,  Yoshiyuki Okuda ,  Tomonari Nakada ,  Atsushi Watanabe ,  Takamasa Yoshikawa ,  Kiyohide Ogasawara

Inventor： Ryota Tanaka ,  Nobuyasu Negishi ,  Kazuto Sakemura ,  Yoshiyuki Okuda ,  Tomonari Nakada ,  Atsushi Watanabe ,  Takamasa Yoshikawa ,  Kiyohide Ogasawara

IPC: H01J63/04

CPC classification number: H01J9/022 ,  B82Y10/00 ,  H01J1/312 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/312 ,  H01J2201/3125 ,  H01J2329/0481 ,  H01J2329/0484

Abstract: An electron emitting device includes an amorphous electron supply layer, an insulating layer formed on the electron supply layer, and an electrode formed on the insulating layer. The electron emits device emitting electrons when an electric field is applied between the electron supply layer and the electrode. The electron emitting device includes a concave portion provided by notching the electrode and the insulating layer to expose the electron supply layer, and a carbon layer covering the electrode and the concave portion except for an inner portion of an exposed surface 4a of the electron supply layer and being in contact with an edge portion of the exposed surface of the electron supply layer.

Abstract translation: 电子发射器件包括非晶电子供给层，形成在电子供给层上的绝缘层和形成在绝缘层上的电极。 当在电子供应层和电极之间施加电场时，电子发射发射电子的装置。 电子发射器件包括凹陷部分，其通过切割电极和绝缘层以暴露电子供应层，以及覆盖电极和除了电子供给层的暴露表面4a的内部以外的凹部的碳层 并且与电子供给层的暴露表面的边缘部分接触。

公开(公告)号：US20100196050A1

公开(公告)日：2010-08-05

申请号：US12699349

申请日：2010-02-03

Applicant: Tadashi Iwamatsu ,  Ayae Nagaoka ,  Hiroyuki Hirakawa ,  Yasuo Imura

Inventor： Tadashi Iwamatsu ,  Ayae Nagaoka ,  Hiroyuki Hirakawa ,  Yasuo Imura

IPC: G03G15/02 ,  H01J1/02 ,  H05B41/00 ,  H01T23/00 ,  H01J9/02

CPC classification number: G03G15/02 ,  B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127 ,  H01J2201/312 ,  H01J2201/3125 ,  H05B33/08

Abstract: An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9≦y≦75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.

Abstract translation: 本发明的电子发射元件包括设置在电极基板和薄膜电极之间的电子加速层，该电子加速层包括（a）导电细颗粒和（b）绝缘平均粒径大于 导电细颗粒的。 电子发射元件满足以下关系式：0.3x + 3.9＆nlE; y＆nlE; 75，其中x（nm）是绝缘细颗粒的平均粒径，y（nm）是薄膜电极的厚度 这样的结构允许相对于绝缘颗粒的尺寸修改薄膜电极的厚度，从而确保导电并允许足够的电流在元件内部流动。 结果，可以从薄膜电极稳定地发射弹道电子。

公开(公告)号：US20100072875A1

公开(公告)日：2010-03-25

申请号：US12597035

申请日：2008-04-23

Applicant: Akira Kojima ,  Hideyuki Ohyi

Inventor： Akira Kojima ,  Hideyuki Ohyi

IPC: H01J1/02

CPC classification number: H01J37/073 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/312 ,  H01J37/06 ,  H01J37/3174 ,  H01J2201/312 ,  H01J2237/0635

Abstract: A surface emission type electron source according to the present invention includes a first electrode having a planar form; a second electrode having a planar form facing the first electrode; an electron passage layer disposed between the first electrode and the second electrode; and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. The quantum wires are made of silicon, and each of the quantum wires has plural thin parts having small thicknesses formed at predetermined intervals along the first direction.

Abstract translation: 根据本发明的表面发射型电子源包括具有平面形式的第一电极; 具有面向第一电极的平面形状的第二电极; 设置在所述第一电极和所述第二电极之间的电子通过层; 以及电源部，被配置为向所述第二电极和所述第一电极施加电压。 电子通过层包括从第一电极延伸到第二电极的第一方向上的多个量子线。 量子线以预定间隔彼此隔开，电子从第二电极的前表面发射。 量子线由硅制成，并且每个量子线具有沿着第一方向以预定间隔形成的具有小厚度的多个薄部。