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    Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device
    1.
    发明授权
    Electron emitting element having an electron acceleration layer, electron emitting device, light emitting device, image display device, cooling device, and charging device 有权
    具有电子加速层的电子发射元件，电子发射器件，发光器件，图像显示器件，冷却器件和充电器件

    公开(公告)号：US08299700B2

    公开(公告)日：2012-10-30

    申请号：US12699349

    申请日：2010-02-03

    Applicant: Tadashi Iwamatsu ,  Ayae Nagaoka ,  Hiroyuki Hirakawa ,  Yasuo Imura

    Inventor： Tadashi Iwamatsu ,  Ayae Nagaoka ,  Hiroyuki Hirakawa ,  Yasuo Imura

    IPC: G05G15/02 ,  H01J1/02 ,  H01J9/02 ,  H05B41/00

    CPC classification number: G03G15/02 ,  B82Y10/00 ,  H01J1/312 ,  H01J9/022 ,  H01J31/127 ,  H01J2201/312 ,  H01J2201/3125 ,  H05B33/08

    Abstract: An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9≦y≦75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.

    Abstract translation: 本发明的电子发射元件包括设置在电极基板和薄膜电极之间的电子加速层，该电子加速层包括（a）导电细颗粒和（b）绝缘平均粒径大于 导电细颗粒的。 电子发射元件满足以下关系式：0.3x + 3.9＆nlE; y＆nlE; 75，其中x（nm）是绝缘细颗粒的平均粒径，y（nm）是薄膜电极的厚度 这样的结构允许相对于绝缘颗粒的尺寸修改薄膜电极的厚度，从而确保导电并允许足够的电流在元件内部流动。 结果，可以从薄膜电极稳定地发射弹道电子。

    ELECTRON EMITTER
    2.
    发明申请
    ELECTRON EMITTER 有权
    电子发射器

    公开(公告)号：US20070188069A1

    公开(公告)日：2007-08-16

    申请号：US11673769

    申请日：2007-02-12

    Applicant: Kei Sato ,  Tetsuya Hattori ,  Hirofumi Yamaguchi ,  Shuichi Ozawa

    Inventor： Kei Sato ,  Tetsuya Hattori ,  Hirofumi Yamaguchi ,  Shuichi Ozawa

    IPC: H01J1/00

    CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J1/30 ,  H01J2201/306 ,  H01J2201/312

    Abstract: Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.

    Abstract translation: 提供了一种具有高耐久性的压电薄膜型电子发射体，其显示出抑制电子发射量的减少，但是通过反复使用电子发射器将会发生减小。 电子发射器包括衬底，下电极，发射极层和上电极。 上电极具有多个开口，并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。 电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时，电子在发射极部分积聚，然后电子朝向减压气氛发射。 发射极层包含主要组分（即铁电组合物）和附加组分。 附加成分含有高氧化数的过渡金属氧化物，其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。

    Electron emitter
    6.
    发明授权
    Electron emitter 有权
    电子发射体

    公开(公告)号：US07576479B2

    公开(公告)日：2009-08-18

    申请号：US11673769

    申请日：2007-02-12

    Applicant: Kei Sato ,  Tetsuya Hattori ,  Hirofumi Yamaguchi ,  Shuichi Ozawa

    Inventor： Kei Sato ,  Tetsuya Hattori ,  Hirofumi Yamaguchi ,  Shuichi Ozawa

    IPC: H01J1/14 ,  H01J1/05

    CPC classification number: H01J1/312 ,  B82Y10/00 ,  H01J1/30 ,  H01J2201/306 ,  H01J2201/312

    Abstract: Provided is a piezoelectric-film-type electron emitter of high durability exhibiting suppressed reduction in electron emission quantity, which reduction would otherwise occur with repeated use of the electron emitter. The electron emitter includes a substrate, a lower electrode, an emitter layer, and an upper electrode. The upper electrode has a plurality of openings, and an emitter section located on the top surface of the emitter layer is exposed through the openings to a reduced-pressure atmosphere. The electron emitter is configured so that when a pulse drive voltage Va is applied between the lower electrode and the upper electrode, electrons are accumulated on the emitter section, and then the electrons are emitted toward the reduced-pressure atmosphere. The emitter layer contains a primary component (i.e., a ferroelectric composition) and an additional component. The additional component contains a transition metal oxide of high oxidation number which can serve as an oxidizing agent by being converted into an oxide of the transition metal of lower oxidation number.

    Abstract translation: 提供了一种具有高耐久性的压电薄膜型电子发射体，其显示出抑制电子发射量的减少，但是通过反复使用电子发射器将会发生减小。 电子发射器包括衬底，下电极，发射极层和上电极。 上电极具有多个开口，并且位于发射极层的顶表面上的发射极部分通过开口暴露于减压气氛。 电子发射器被配置为使得当在下电极和上电极之间施加脉冲驱动电压Va时，电子在发射极部分积聚，然后电子朝向减压气氛发射。 发射极层包含主要组分（即铁电组合物）和附加组分。 附加成分含有高氧化数的过渡金属氧化物，其可以通过转化为较低氧化数的过渡金属的氧化物而用作氧化剂。

    Electronic device and method for manufacturing same
    7.
    发明授权
    Electronic device and method for manufacturing same 失效
    电子装置及其制造方法

    公开(公告)号：US08653519B2

    公开(公告)日：2014-02-18

    申请号：US13582611

    申请日：2011-03-31

    Applicant: Tsutomu Ichihara ,  Kenji Tsubaki ,  Masao Kubo ,  Nobuyoshi Koshida

    Inventor： Tsutomu Ichihara ,  Kenji Tsubaki ,  Masao Kubo ,  Nobuyoshi Koshida

    IPC: H01L29/04

    CPC classification number: H01J9/025 ,  B82Y10/00 ,  H01J1/312 ,  H01J2201/312

    Abstract: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

    Abstract translation: 电子器件包括衬底，形成在衬底的表面上的第一电极，与第一电极相对的第一电极的与衬底相对的第二电极，以便面对第一电极;以及功能层，介于第一电极 和第二电极，并且通过在电解溶液中阳极氧化第一多晶半导体层而形成以包含多个半导体纳米晶体。 电子设备还包括插入在第一电极和功能层之间以与功能层紧密接触的第二多晶半导体层。 第二多晶半导体层在电解液中的阳极氧化速度低于第一多晶半导体层的阳极氧化速率，以作为仅对阳极氧化第一多晶半导体层的停止层。

    ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME
    10.
    发明申请
    ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME 失效
    电子设备及其制造方法

    公开(公告)号：US20130032801A1

    公开(公告)日：2013-02-07

    申请号：US13582611

    申请日：2011-03-31

    Applicant: Tsutomu Ichihara ,  Kenji Tsubaki ,  Masao Kubo ,  Nobuyoshi Koshida

    Inventor： Tsutomu Ichihara ,  Kenji Tsubaki ,  Masao Kubo ,  Nobuyoshi Koshida

    IPC: H01L33/02 ,  H01L21/20

    CPC classification number: H01J9/025 ,  B82Y10/00 ,  H01J1/312 ,  H01J2201/312

    Abstract: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

    Abstract translation: 电子器件包括衬底，形成在衬底的表面上的第一电极，与第一电极相对的第一电极的与衬底相对的第二电极，以便面对第一电极;以及功能层，介于第一电极 和第二电极，并且通过在电解溶液中阳极氧化第一多晶半导体层而形成以包含多个半导体纳米晶体。 电子设备还包括插入在第一电极和功能层之间以与功能层紧密接触的第二多晶半导体层。 第二多晶半导体层在电解液中的阳极氧化速度低于第一多晶半导体层的阳极氧化速率，以作为仅对阳极氧化第一多晶半导体层的停止层。

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