公开(公告)号：US06690008B2

公开(公告)日：2004-02-10

申请号：US09954681

申请日：2001-09-14

Applicant: Thomas Hantschel ,  Wilfried Vandervorst

Inventor： Thomas Hantschel ,  Wilfried Vandervorst

IPC: H01J3726

CPC classification number: G01Q60/40 ,  G01Q60/34 ,  G01Q60/38 ,  Y10S977/873

Abstract: An atomic force microscopy (AFM) probe and a method of manufacturing mounted probes for AFM applications. The method implements an optimized soldering procedure for mounting a probe to a holder chip. In one embodiment, a metallisation system of Ti:W+Ni+Au is applied with a SnBi58 solder paste in combination with a hotplate. The mechanical connection between the probe and holder chip is preferably rigid. The soldered probe is highly conductive and the probe-holder chip assembly shows clear resonance peaks in tapping mode AFM.

Abstract translation: 原子力显微镜（AFM）探针和制造用于AFM应用的安装探针的方法。 该方法实现了将探头安装到保持器芯片的优化焊接程序。 在一个实施例中，Ti：W + Ni + Au的金属化系统与SnBi58焊锡膏一起加热。 探针和保持器芯片之间的机械连接优选是刚性的。 焊接的探头是高导电性的，并且探头支架芯片组件在攻丝模式AFM中显示清晰的共振峰值。

公开(公告)号：US06683316B2

公开(公告)日：2004-01-27

申请号：US10210242

申请日：2002-08-01

Applicant: Frederick Schamber ,  Cornelis Van Beek ,  Nicholas Ritchie

Inventor： Frederick Schamber ,  Cornelis Van Beek ,  Nicholas Ritchie

IPC: H01J3726

CPC classification number: H01J37/226 ,  G01N23/2251 ,  H01J37/28 ,  H01J2237/2826 ,  Y10S977/86 ,  Y10S977/869 ,  Y10S977/881

Abstract: An instrument system is controlled to acquire an optical image of an object, with the optical image defining a first coordinate system. The object is positioned in a second coordinate system and a point in the optical image is selected. The object is repositioned so that a point on the object corresponding to the selected point in the optical image is positioned at a predetermined point in the second coordinate system. Alternatively, movement of the object causes an indicia on the optical image to move to a point thereon corresponding to the point on the object that is positioned at the predetermined point in the second coordinate system.

Abstract translation: 控制仪器系统以获得物体的光学图像，光学图像定义第一坐标系。 物体位于第二坐标系中，并且选择光学图像中的点。 对象被重新定位，使得对应于光学图像中的所选点的对象上的点位于第二坐标系中的预定点。 或者，物体的运动使得光学图像上的标记移动到与位于第二坐标系中的预定点处的物体上的点相对应的点上。

公开(公告)号：US06661000B2

公开(公告)日：2003-12-09

申请号：US10316725

申请日：2002-12-11

Applicant: Michael P. Smith ,  Robert J. Pottorf ,  Gary G. Gray ,  Maxim O. Vityk

Inventor： Michael P. Smith ,  Robert J. Pottorf ,  Gary G. Gray ,  Maxim O. Vityk

IPC: H01J3726

CPC classification number: E21B49/005 ,  G01N33/241 ,  G01V9/007

Abstract: A method for predicting hydrocarbon-bearing zones and estimating rock properties by analyzing fluids trapped in the pore spaces or adsorbed on the surfaces of rock samples. The trapped gases are removed under vacuum and analyzed by a mass spectrometer. Data peaks corresponding to petroleum constituent molecules provide an indication of presence and abundance of hydrocarbons. A decrease of the count rate over time is used to estimate permeability and other rock properties. Concentration ratios for selected constituents indicate oil quality and depth of the oil-water contact.

公开(公告)号：US06608307B1

公开(公告)日：2003-08-19

申请号：US10184181

申请日：2002-06-27

Applicant: Christof Baur

Inventor： Christof Baur

IPC: H01J3726

CPC classification number: G01Q10/065 ,  H01J2237/2818 ,  Y10S977/849 ,  Y10S977/85 ,  Y10S977/851 ,  Y10S977/86 ,  Y10S977/872

Abstract: A system and method provide three-dimensional real time stabilization of the gap between probe tip and sample in a scanning probe microscope (SPM) against creep and drift. Supplemental signals in each axis provide supplemental movement to the probe tip to offset drift. The supplemental signals can be applied simultaneously or sequentially in any combination of axes. Typically the supplemental signals are determined from calculated drift predictions, based on drift measurements inferred from feedback in response to the gap-dependent strength of an interaction between probe and sample. Waveform modulation is coupled into the drive circuitry for each axis, and a waveform-synchronous feedback signal is extracted and processed to measure drift. The waveform modulations can be identical or asynchronous and applied sequentially or simultaneously in any combination of axes. An algorithm performs the process in real time.

Abstract translation: 系统和方法在扫描探针显微镜（SPM）中提供针对蠕变和漂移的探针尖端和样品之间的间隙的三维实时稳定性。 每个轴上的补充信号为探针尖端提供补充运动以抵消漂移。 补充信号可以同时或顺序地应用于任何轴的组合。 通常，根据从响应于探针和样品之间的相互作用的间隙依赖强度的反馈推断的漂移测量，从计算的漂移预测确定补充信号。 波形调制被耦合到每个轴的驱动电路中，并且提取并处理波形同步反馈信号以测量漂移。 波形调制可以是相同的或不同步的，并且可以在轴的任意组合中顺序或同时应用。 算法实时执行该过程。

公开(公告)号：US06552337B1

公开(公告)日：2003-04-22

申请号：US09688283

申请日：2000-10-13

Applicant: Kyoo-chul Cho ,  Tae-Yeol Heo ,  Jeong-hoon An ,  Gi-jung Kim

Inventor： Kyoo-chul Cho ,  Tae-Yeol Heo ,  Jeong-hoon An ,  Gi-jung Kim

IPC: H01J3726

CPC classification number: G01Q60/24 ,  G01B7/34 ,  G01Q30/02 ,  H01L22/12 ,  Y10S977/852

Abstract: Embodiments of the present invention provide methods for measuring a wafer surface. A portion of the wafer surface is measured using a particle counter to provide first measurements corresponding to a plurality of points on the wafer surface. A selected area of the wafer surface including one of the plurality of points is measured using an atomic force microscope (AFM) to provide a microroughness measurement of the selected area. The selected area is a localized area of the portion of the wafer surface measured using the particle counter. The first measurements and the microroughness measurement are provided as a measurement of the wafer surface. The portion measured using a particle counter may, for example, be substantially the entire wafer surface.

Abstract translation: 本发明的实施例提供了用于测量晶片表面的方法。 使用粒子计数器测量晶片表面的一部分，以提供对应于晶片表面上的多个点的第一测量。 使用原子力显微镜（AFM）测量包括多个点中的一个的晶片表面的选定区域，以提供所选区域的微粗糙度测量。 所选择的区域是使用粒子计数器测量的晶片表面部分的局部区域。 提供第一测量和微粗糙度测量作为晶片表面的测量。 使用粒子计数器测量的部分可以例如基本上是整个晶片表面。

公开(公告)号：US06528786B2

公开(公告)日：2003-03-04

申请号：US09795999

申请日：2001-02-28

Applicant: Eugene P. Marsh

Inventor： Eugene P. Marsh

IPC: H01J3726

CPC classification number: G01N23/2258 ,  H01J37/252 ,  H01J2237/2527

Abstract: An apparatus and method for mass spectrometric determination of contaminant components of a thin oxide surface layer of a semiconductor wafer use a movable mechanical stage to scan and raster a large area of the wafer in a continuous scanning motion. The mass of analyte is greatly increased, resulting in improved sensitivity to trace components in the surface layer by a factor of 10-100 or more. A light beam interferometer is used to determine non-planarity from e.g. warping of the wafer and provide a correction by maintaining a constant separation between the wafer and the extraction plate or adjusting the electrical bias of the wafer relative to the extraction bias.

公开(公告)号：US06437343B1

公开(公告)日：2002-08-20

申请号：US09265184

申请日：1999-03-09

Applicant: Kenya Okazaki ,  Hirohisa Fujimoto ,  Shuichi Ito

Inventor： Kenya Okazaki ,  Hirohisa Fujimoto ,  Shuichi Ito

IPC: H01J3726

CPC classification number: G01Q10/04 ,  Y10S977/872

Abstract: A tube scanner comprises a piezoelectric ceramic in the form of a hollow cylinder, which is externally surrounded by a Z-axis outside electrode and four slip-shaped driving electrodes arranged at intervals in the circumferential direction. The piezoelectric ceramic is internally surrounded by a Z-axis inside electrode and an XY-axis common electrode. The Z-axis inside electrode faces the Z-axis outside electrode across the piezoelectric ceramic, while the XY-axis common electrode faces the X- and Y-axis driving electrodes across the ceramic. Opposite-polarity voltages are applied to the Z-axis outside electrode and the Z-axis inside electrode, individually, whereupon the tube scanner is displaced in the Z-axis direction.

Abstract translation: 管扫描器包括中空圆筒形式的压电陶瓷，其外部由Z轴外电极围绕，并且四个滑动状驱动电极沿圆周方向间隔设置。 压电陶瓷由Z轴内部电极和XY轴公共电极内部包围。 Z轴内电极面对压电陶瓷上的Z轴外电极，而XY轴公共电极面对穿过陶瓷的X轴和Y轴驱动电极。 单独的Z轴外电极和Z轴内电极施加相反极性电压，于是管扫描器沿Z轴方向移位。

公开(公告)号：US06407388B1

公开(公告)日：2002-06-18

申请号：US09551003

申请日：2000-04-18

Applicant: Jürgen Frosien

Inventor： Jürgen Frosien

IPC: H01J3726

CPC classification number: H01J37/28 ,  H01J37/145

Abstract: The invention relates to a corpuscular beam device with an objective lens for focussing a primary particle beam onto a specimen and a detector for detecting secondary and/or backscattered particles released at the specimen. Furthermore, there is a sieve electrode arranged above the specimen which has a central hole for the primary particle beam and a plurality of additional holes for the secondary and/or backscattered particles.

Abstract translation: 本发明涉及具有用于将一次粒子束聚焦到样本上的物镜的红细胞束装置和用于检测在样品上释放的二次和/或反向散射颗粒的检测器。 此外，在试样上设置有筛电极，其具有用于一次粒子束的中心孔和用于次级和/或后向散射粒子的多个附加孔。

公开(公告)号：US06271519B1

公开(公告)日：2001-08-07

申请号：US09505333

申请日：2000-02-16

Applicant: Eugene P. Marsh

Inventor： Eugene P. Marsh

IPC: H01J3726

CPC classification number: G01N23/2258 ,  H01J37/252 ,  H01J2237/2527

Abstract: An apparatus and method for mass spectrometric determination of contaminant components of a thin oxide surface layer of a semiconductor wafer use a movable mechanical stage to scan and raster a large area of the wafer in a continuous scanning motion. The mass of analyte is greatly increased, resulting in improved sensitivity to trace components in the surface layer by a factor of 10-100 or more. A light beam interferometer is used to determine non-planarity from e.g. warping of the wafer and provide a correction by maintaining a constant separation between the wafer and the extraction plate or adjusting the electrical bias of the wafer relative to the extraction bias.

公开(公告)号：US06818902B2

公开(公告)日：2004-11-16

申请号：US10725400

申请日：2003-12-03

Applicant: Patrice Perez ,  André Rosowsky

Inventor： Patrice Perez ,  André Rosowsky

IPC: H01J3726

CPC classification number: H01J37/065 ,  H01J27/20 ,  H01J2237/06391 ,  H01J2237/25 ,  H05H6/00

Abstract: A positron source is applicable particularly to solid state physics, including a thin target receiving a continuous or practically continuous 10 MeV electron beam in grazing incidence and generating positrons upon interaction with this beam.

Abstract translation: 正电子源特别适用于固体物理学，包括在与该光束相互作用时接收连续或实际上连续的10MeV电子束并在产生正电子的薄靶中。