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    Method of manufacturing ZnO-based thin film transistor
    191.
    发明授权
    Method of manufacturing ZnO-based thin film transistor 有权
    制造ZnO基薄膜晶体管的方法

    公开(公告)号：US07682882B2

    公开(公告)日：2010-03-23

    申请号：US12153674

    申请日：2008-05-22

    Applicant: Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    Inventor： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

    IPC: H01L21/00

    CPC classification number: H01L29/7869

    Abstract: Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

    Abstract translation: 提供了一种制造ZnO基薄膜晶体管（TFT）的方法。 该方法可以包括使用一个或两个湿蚀刻来形成源极和漏极。 对于等离子体具有相对稳定的结合能的锡（Sn）氧化物，氟化物或氯化物可以包括在通道层中。 因为源电极和漏电极是通过湿蚀刻形成的，所以可以防止或减少对沟道层的损伤和氧空位。 因为具有较高结合能的材料分布在沟道层中，所以可以防止或减少在形成钝化层时对沟道层的损坏。

    Organic thin film transistor(s) and method(s) for fabricating the same
    194.
    发明授权
    Organic thin film transistor(s) and method(s) for fabricating the same 有权
    有机薄膜晶体管及其制造方法

    公开(公告)号：US07547574B2

    公开(公告)日：2009-06-16

    申请号：US11297396

    申请日：2005-12-09

    Applicant: Hyun Jung Park ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  Jung Seok Hahn ,  Tae Woo Lee

    Inventor： Hyun Jung Park ,  Sang Yoon Lee ,  Eun Jeong Jeong ,  Kook Min Han ,  Jung Seok Hahn ,  Tae Woo Lee

    IPC: H01L51/40

    CPC classification number: H01L51/105 ,  H01L51/0055 ,  H01L51/052

    Abstract: Example embodiments of the present invention for fabricating an organic thin film transistor including a substrate, a gate electrode, a gate insulating layer, metal oxide source/drain electrodes and an organic semiconductor layer wherein the metal oxide source/drain electrodes are surface-treated with a self-assembled monolayer (SAM) forming compound containing a sulfonic acid group. According to example embodiments of the present invention, the surface of the source/drain electrodes may be modified to be more hydrophobic and/or the work function of a metal oxide constituting the source/drain electrodes may be increased to above that of an organic semiconductor material constituting the organic semiconductor layer. Organic thin film transistors fabricated according to one or more example embodiments of the present invention may exhibit higher charge carrier mobility. Also disclosed are various example devices including display devices having organic thin film transistors made by example embodiments of the present invention.

    Abstract translation: 本发明的制造有机薄膜晶体管的示例实施例包括基板，栅电极，栅极绝缘层，金属氧化物源极/漏极和有机半导体层，其中金属氧化物源极/漏极用 包含磺酸基团的自组装单层（SAM）形成化合物。 根据本发明的示例性实施例，源/漏电极的表面可以被修改为更疏水，和/或构成源/漏电极的金属氧化物的功函数可以增加到高于有机半导体的功函数 构成有机半导体层的材料。 根据本发明的一个或多个示例性实施例制造的有机薄膜晶体管可以表现出更高的载流子迁移率。 还公开了包括具有由本发明的示例性实施例制成的有机薄膜晶体管的显示器件的各种示例器件。

    Composition for forming passivation layer and organic thin film transistor comprising the passivation layer
    195.
    发明申请
    Composition for forming passivation layer and organic thin film transistor comprising the passivation layer 有权
    用于形成钝化层的组合物和包含钝化层的有机薄膜晶体管

    公开(公告)号：US20090045396A1

    公开(公告)日：2009-02-19

    申请号：US12078403

    申请日：2008-03-31

    Applicant: Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

    Inventor： Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

    IPC: H01L51/05 ,  G03F7/00 ,  H01L51/40 ,  C08F2/46

    CPC classification number: G03F7/092 ,  G03F7/0046 ,  G03F7/038

    Abstract: Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.

    Abstract translation: 本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法 有机薄膜晶体管和电子器件。 有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案， 从而表现出适用于电子设备的特性。

    ZnO-BASED THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    197.
    发明申请
    ZnO-BASED THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
    基于ZnO的薄膜晶体管及其制造方法

    公开(公告)号：US20080283831A1

    公开(公告)日：2008-11-20

    申请号：US11960567

    申请日：2007-12-19

    Applicant: Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

    Inventor： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

    IPC: H01L29/227 ,  H01L21/34

    CPC classification number: H01L29/7869

    Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

    Abstract translation: 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

    Organic insulator composition including a hydroxyl group-containing polymer, dielectric film and organic thin film transistor using the same
    198.
    发明申请
    Organic insulator composition including a hydroxyl group-containing polymer, dielectric film and organic thin film transistor using the same 有权
    含有羟基的聚合物，介电膜和使用其的有机薄膜晶体管的有机绝缘体组合物

    公开(公告)号：US20080283829A1

    公开(公告)日：2008-11-20

    申请号：US12081452

    申请日：2008-04-16

    Applicant: Joo Young Kim ,  Myung Sup Jung ,  Sang Yoon Lee

    Inventor： Joo Young Kim ,  Myung Sup Jung ,  Sang Yoon Lee

    IPC: H01L51/05 ,  C08F16/06

    CPC classification number: H01L51/052 ,  H01L51/0036 ,  H01L51/0545

    Abstract: An organic insulator composition including a crosslinking agent and a hydroxyl group-containing oligomer or hydroxyl group-containing polymer is provided. A dielectric film and an organic thin film transistor (OTFT) using an organic insulator composition are also provided. A dielectric film may include a compound having hydroxyl group-containing oligomers or hydroxyl group-containing polymers linked by crosslinking using a crosslinking agent having at least two vinyl ether groups. An organic thin film transistor may include a gate electrode on a substrate, a gate insulating layer on the gate electrode, source and drain electrodes on the gate insulating layer and an organic semiconductor layer contacting the gate insulating layer, wherein the gate insulating layer includes an dielectric film as described above.

    Abstract translation: 提供了包含交联剂和含羟基的低聚物或含羟基的聚合物的有机绝缘体组合物。 还提供了使用有机绝缘体组合物的电介质膜和有机薄膜晶体管（OTFT）。 电介质膜可以包括具有含羟基的低聚物或含羟基聚合物的化合物，其通过使用具有至少两个乙烯基醚基团的交联剂进行交联而连接。 有机薄膜晶体管可以包括基板上的栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的源极和漏极以及与栅极绝缘层接触的有机半导体层，其中栅极绝缘层包括 如上所述的介电膜。

    Method for forming UV-patternable conductive polymer film and conductive polymer film formed by the same
    199.
    发明申请
    Method for forming UV-patternable conductive polymer film and conductive polymer film formed by the same 有权
    形成紫外线图案的导电聚合物膜和由其形成的导电聚合物膜的方法

    公开(公告)号：US20080241549A1

    公开(公告)日：2008-10-02

    申请号：US12076959

    申请日：2008-03-26

    Applicant: Jong Baek Seon ,  Young Gwan Lee ,  Jung Seok Hahn ,  Sang Yoon Lee

    Inventor： Jong Baek Seon ,  Young Gwan Lee ,  Jung Seok Hahn ,  Sang Yoon Lee

    IPC: B32B9/04 ,  C08J7/04

    CPC classification number: H05K3/02 ,  C08J7/047 ,  C08J7/18 ,  C08J2367/02 ,  C08J2400/14 ,  H05K2201/0329 ,  H05K2203/0796 ,  H05K2203/1142 ,  Y10T428/31504

    Abstract: Example embodiments provide a method for forming a UV-patternable conductive polymer film. According to the method, vapor-phase polymerization (VPP) may be employed to synthesize a conductive polymer and a UV-curable polymer resin may be used as a binder to form a conductive polymer film. Example embodiments also provide a conductive polymer film formed by the method. The conductive polymer film may be patterned in a relatively simple manner while maintaining increased conductivity, improved transparency and improved flexibility. Therefore, the conductive polymer film may be used as a material for transparent electrodes of a variety of display devices, e.g., LCD and PDP devices, and electronic devices, e.g., ELs and TFTs.

    Abstract translation: 示例性实施例提供了形成可UV图案化的导电聚合物膜的方法。 根据该方法，可以使用气相聚合（VPP）来合成导电性聚合物，并且可以使用UV固化型聚合物树脂作为粘合剂以形成导电聚合物膜。 示例性实施例还提供通过该方法形成的导电聚合物膜。 导电聚合物膜可以以相对简单的方式图案化，同时保持增加的导电性，改善的透明度和改进的柔性。 因此，导电性聚合物膜可以用作各种显示装置的透明电极的材料，例如LCD和PDP装置，以及电子装置，例如EL和TFT。

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