公开(公告)号：US08497201B2

公开(公告)日：2013-07-30

申请号：US13268191

申请日：2011-10-07

Applicant: Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

Inventor： Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

IPC: H01L21/4763

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  H01L21/76816

Abstract: A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

Abstract translation: 提供一种制造半导体器件的方法，其包括提供衬底。 材料层形成在衬底上。 聚合物层形成在材料层上。 使用聚合物层的一部分自组装纳米尺寸的特征。 使用纳米尺寸的特征对衬底进行图案化。

公开(公告)号：US08383322B2

公开(公告)日：2013-02-26

申请号：US11427017

申请日：2006-06-28

Applicant: Ching-Yu Chang ,  Vincent Yu

Inventor： Ching-Yu Chang ,  Vincent Yu

IPC: G03F7/26

CPC classification number: G03F7/2041 ,  G03F7/70341

Abstract: A method of performing immersion lithography on a semiconductor substrate includes providing a layer of resist onto a surface of the semiconductor substrate and exposing the resist layer using an immersion lithography exposure system. The immersion lithography exposure system utilizes a fluid during exposure and may be capable of removing some, but not all, of the fluid after exposure. After exposure, a treatment process is used to neutralize the effect of undesired elements that diffused into the resist layer during the immersion exposure. After treatment, a post-exposure bake and a development step are used.

Abstract translation: 在半导体衬底上进行浸渍光刻的方法包括在半导体衬底的表面上提供抗蚀剂层并使用浸没光刻曝光系统曝光抗蚀剂层。 浸没式光刻曝光系统在曝光期间利用流体，并且可以在曝光后能够去除一些但不是全部的流体。 曝光后，使用处理工艺来中和在浸没曝光期间扩散到抗蚀剂层中的不期望的元素的影响。 处理后，使用曝光后烘烤和显影步骤。

公开(公告)号：US20120329282A1

公开(公告)日：2012-12-27

申请号：US13599143

申请日：2012-08-30

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/308

CPC classification number: H01L21/76811 ,  H01L21/76807 ,  H01L21/76813 ,  H01L21/7684 ,  H01L23/522 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Various lithography methods are disclosed. An exemplary lithography method includes forming a first patterned silicon-containing organic polymer layer over a substrate by removing a first patterned resist layer, wherein the first patterned silicon-containing organic polymer layer includes a first opening having a first dimension and a second opening having the first dimension, the first opening and the second opening exposing the substrate; forming a second patterned silicon-containing organic polymer layer over the substrate by removing a second patterned resist layer, wherein a portion of the patterned second silicon-containing organic polymer layer combines with a portion of the first patterned silicon-containing organic polymer layer to reduce the first dimension of the second opening to a second dimension; and etching the substrate exposed by the first opening having the first dimension and the second opening having the second dimension.

Abstract translation: 公开了各种光刻方法。 示例性光刻方法包括通过去除第一图案化抗蚀剂层在衬底上形成第一图案化的含硅有机聚合物层，其中第一图案化含硅有机聚合物层包括具有第一尺寸的第一开口和具有第一开口的第二开口， 第一尺寸，第一开口和第二开口暴露衬底; 通过去除第二图案化的抗蚀剂层在衬底上形成第二图案化的含硅有机聚合物层，其中图案化的第二含硅有机聚合物层的一部分与第一图案化的含硅有机聚合物层的一部分结合以减少 第二开口的第一尺寸到第二尺寸; 并且蚀刻由具有第一尺寸的第一开口暴露的基板和具有第二尺寸的第二开口。

公开(公告)号：US20120320351A1

公开(公告)日：2012-12-20

申请号：US13595734

申请日：2012-08-27

Applicant: Burn Jeng Lin ,  Ching-Yu Chang

Inventor： Burn Jeng Lin ,  Ching-Yu Chang

IPC: G03B27/52 ,  G03B27/42

CPC classification number: G03F7/70866 ,  G03F7/70341

Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and

Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，晶片台包括沿着晶片的顶部边缘设置在密封环框架上的密封环， 晶片台，用于密封晶片边缘与晶片台之间的间隙的密封环。 该实施例还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片完全浸没在浸没流体中，并且覆盖设置在流体的至少一部分上 罐，用于在流体箱内提供温度控制，流体丰富的环境; 和

公开(公告)号：US20120236276A1

公开(公告)日：2012-09-20

申请号：US13482879

申请日：2012-05-29

Applicant: Burn Jeng Lin ,  Ching-Yu Chang

Inventor： Burn Jeng Lin ,  Ching-Yu Chang

IPC: G03B27/52

CPC classification number: G03B27/52 ,  G03F7/70341

Abstract: Immersion lithography system and method using direction-controlling fluid inlets are described. According to one embodiment of the present disclosure, an immersion lithography apparatus includes a lens assembly having an imaging lens disposed therein and a wafer stage configured to retain a wafer beneath the lens assembly. The apparatus also includes a plurality of direction-controlling fluid inlets disposed adjacent to the lens assembly, each direction-controlling fluid inlet in the plurality of direction-controlling fluid inlets being configured to direct a flow of fluid beneath the lens assembly and being independently controllable with respect to the other fluid inlets in the plurality of direction-controlling fluid inlets.

Abstract translation: 描述了使用方向控制流体入口的浸渍光刻系统和方法。 根据本公开的一个实施例，浸没式光刻设备包括具有设置在其中的成像透镜的透镜组件和被配置为将晶片保持在透镜组件下方的晶片台。 该装置还包括多个方向控制流体入口，其邻近透镜组件设置，多个方向控制流体入口中的每个方向控制流体入口构造成将透镜流体下方的流体引导到透镜组件的下方并且可独立控制 相对于多个方向控制流体入口中的其它流体入口。

公开(公告)号：US08153523B2

公开(公告)日：2012-04-10

申请号：US12362174

申请日：2009-01-29

Applicant: Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Ching-Yu Chang

Inventor： Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Ching-Yu Chang

IPC: H01L21/44

CPC classification number: H01L21/31111 ,  H01L21/31144 ,  H01L29/517

Abstract: A method of semiconductor fabrication including an etching process is provided. The method includes providing a substrate and forming a target layer on the substrate. An etchant layer is formed on the target layer. The etchant layer reacts with the target layer and etches a portion of the target layer. In an embodiment, an atomic layer of the target layer is etched. The etchant layer is then removed from the substrate. The process may be iterated any number of times to remove a desired amount of the target layer. In an embodiment, the method provides for decreased lateral etching. The etchant layer may provide for improved control in forming patterns in thin target layers such as, capping layers or high-k dielectric layers of a gate structure.

Abstract translation: 提供了包括蚀刻工艺的半导体制造方法。 该方法包括提供衬底并在衬底上形成目标层。 在目标层上形成蚀刻剂层。 蚀刻剂层与靶层反应并蚀刻目标层的一部分。 在一个实施例中，蚀刻目标层的原子层。 然后从衬底去除蚀刻剂层。 该过程可以迭代任何次数以去除期望量的目标层。 在一个实施例中，该方法提供减少的横向蚀刻。 蚀刻剂层可以提供在薄目标层中形成图案的改进控制，例如栅极结构的覆盖层或高k电介质层。

公开(公告)号：US08153350B2

公开(公告)日：2012-04-10

申请号：US12205509

申请日：2008-09-05

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/26

CPC classification number: G03F7/40 ,  G03F7/405

Abstract: The present invention includes a lithography method comprising forming a first patterned resist layer including at least one opening therein over a substrate. A protective layer is formed on the first patterned resist layer and the substrate whereby a reaction occurs at the interface between the first patterned resist layer and the protective layer to form a reaction layer over the first patterned resist layer. The non-reacted protective layer is then removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

Abstract translation: 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化抗蚀剂层。 在第一图案化抗蚀剂层和基板上形成保护层，由此在第一图案化抗蚀剂层和保护层之间的界面处发生反应，以在第一图案化抗蚀剂层上形成反应层。 然后除去未反应的保护层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

公开(公告)号：US08137895B2

公开(公告)日：2012-03-20

申请号：US11427721

申请日：2006-06-29

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/11

CPC classification number: G03F7/091

Abstract: An anti-reflective coating comprises a plurality of main backbone chains, and at least one long free polymer chain coupled to at least one of the plurality of main backbone chains.

Abstract translation: 抗反射涂层包含多个主要主链，以及至少一个与多个主要主链中的至少一个连接的长自由聚合物链。

公开(公告)号：US20120028477A1

公开(公告)日：2012-02-02

申请号：US13268191

申请日：2011-10-07

Applicant: Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

Inventor： Tsung-Lin Lee ,  Clement Hsingjen Wann ,  Ching-Yu Chang

IPC: H01L21/312

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  H01L21/76816

Abstract: A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

Abstract translation: 提供一种制造半导体器件的方法，其包括提供衬底。 材料层形成在衬底上。 聚合物层形成在材料层上。 使用聚合物层的一部分自组装纳米尺寸的特征。 使用纳米尺寸的特征对衬底进行图案化。

公开(公告)号：US20110229829A1

公开(公告)日：2011-09-22

申请号：US13111534

申请日：2011-05-19

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/20

CPC classification number: G03F7/2041 ,  G03F7/0046

Abstract: An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.

Abstract translation: 一种浸没式光刻抗蚀剂材料，包括具有第一极性的基质聚合物和具有基本上大于第一极性的第二极性的添加剂。 添加剂可以具有小于约1000道尔顿的分子量。 浸没式光刻抗蚀剂材料可具有基本上大于基质聚合物的接触角的接触角。