公开(公告)号：US20120014137A1

公开(公告)日：2012-01-19

申请号：US12991239

申请日：2010-09-10

Applicant: Gang Yu

Inventor： Gang Yu

IPC: F21V7/22

CPC classification number: G02F1/133308 ,  G02F1/133602 ,  G02F2001/133314 ,  G02F2201/46 ,  G02F2201/465

Abstract: The present invention provides a backlight module and a housing unit structure thereof. The backlight module includes a back plate having a first edge, a second edge, a third edge and a fourth edge. The edges of the back plate are provided with a housing including two housing strips and housing unit structures. The housing strips are disposed on the first edge and the third edge. The length of the housing unit structure is shorter than that of the second or fourth edge of the back plate, so that the second or fourth edge can be mounted with a suitable number of the housing unit structures, while insufficient length portion is compensated by buffering strips. The backlight module uses an adjustable modular design to adjust the number of the housing unit structures and the buffering strips for being suitably applied to various backlight modules with different sizes. Except for reducing the use of material, the development cost and time of the backlight module can be saved.

Abstract translation: 本发明提供一种背光模块及其壳体单元结构。 背光模块包括具有第一边缘，第二边缘，第三边缘和第四边缘的背板。 背板的边缘设置有包括两个壳体条和壳体单元结构的壳体。 壳体条设置在第一边缘和第三边缘上。 壳体单元结构的长度短于后板的第二或第四边缘的长度，使得第二或第四边缘可以安装有合适数量的壳体单元结构，而不足的长度部分通过缓冲来补偿 带子。 背光模块使用可调整的模块化设计来调节壳体单元结构和缓冲条的数量，以适当地应用于具有不同尺寸的各种背光模块。 除了减少使用材料外，还可节省背光模组的开发成本和时间。

公开(公告)号：US08033883B2

公开(公告)日：2011-10-11

申请号：US12324047

申请日：2008-11-26

Applicant: Gang Yu ,  Nugent Truong

Inventor： Gang Yu ,  Nugent Truong

IPC: H01J9/00

CPC classification number: H01L51/5088 ,  H01L27/3239 ,  H01L2251/558 ,  Y10S428/917

Abstract: An organic electronic device includes a first electrode layer, an organic resistive layer coupled to the first electrode layer wherein the organic resistive layer defines at least three regions, an organic active layer coupled to the organic resistive layer, and a second electrode layer coupled to the organic active layer. Each of the at least three regions is characterized by one of the plurality of resistances and the plurality of resistances includes at least three discrete resistances that are different from one another. The regions can be fabricated by selectively exposing portions of the organic resistive layer to a chemical, selectively removing portions of the organic resistive layer, or depositing a plurality of blends.

Abstract translation: 有机电子器件包括第一电极层，耦合到第一电极层的有机电阻层，其中有机电阻层限定至少三个区域，耦合到有机电阻层的有机活性层和耦合到有机电阻层的第二电极层 有机活性层。 所述至少三个区域中的每个区域的特征在于所述多个电阻中的一个，并且所述多个电阻包括彼此不同的至少三个离散电阻。 可以通过将有机电阻层的部分选择性地暴露于化学品，选择性地除去有机电阻层的部分或沉积多种共混物来制造这些区域。

公开(公告)号：US20110227065A1

公开(公告)日：2011-09-22

申请号：US13116292

申请日：2011-05-26

Applicant: Chan-Long Shieh ,  Gang Yu

Inventor： Chan-Long Shieh ,  Gang Yu

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969

Abstract: A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

Abstract translation: 在透明基板上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明栅极金属区域，沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层，沉积透明钝化 在所述半导体材料上沉积光致抗蚀剂，在所述钝化材料上沉积光致抗蚀剂，曝光和显影所述光致抗蚀剂以去除暴露部分，蚀刻所述钝化材料以留下限定沟道区的钝化区，在所述钝化区上沉积透明导电材料， 导电材料，曝光和显影光致抗蚀剂以去除未曝光部分，并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

公开(公告)号：US20110147761A1

公开(公告)日：2011-06-23

申请号：US13015013

申请日：2011-01-27

Applicant: Gang Yu ,  Chan-Long Shieh ,  Hsing-Chung Lee

Inventor： Gang Yu ,  Chan-Long Shieh ,  Hsing-Chung Lee

IPC: H01L29/12 ,  H01L21/28 ,  H01L21/20

CPC classification number: H01L29/861 ,  G02F1/1365 ,  G02F1/167 ,  H01L29/22 ,  H01L29/417 ,  H01L29/786 ,  H01L45/00 ,  H01L51/0035 ,  H01L51/0579 ,  H01L51/0587

Abstract: Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotating element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.

Abstract translation: 提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。 这些器件可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。 开关器件包括两个电极和位于电极之间的宽带半导体材料层。 根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。 阴极和阳极材料之间的功函数差异优选为至少约0.6eV。 可以实现在约15V的电压范围内的至少10,000的开/关电流比。 如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

公开(公告)号：US07898042B2

公开(公告)日：2011-03-01

申请号：US11801735

申请日：2007-05-09

Applicant: Gang Yu ,  Chan-Long Shieh ,  Hsing-Chung Lee

Inventor： Gang Yu ,  Chan-Long Shieh ,  Hsing-Chung Lee

IPC: H01L21/00 ,  H01L47/00 ,  H01L29/04

CPC classification number: H01L29/861 ,  G02F1/1365 ,  G02F1/167 ,  H01L29/22 ,  H01L29/417 ,  H01L29/786 ,  H01L45/00 ,  H01L51/0035 ,  H01L51/0579 ,  H01L51/0587

Abstract: Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.

Abstract translation: 提供了具有高导通/截止电流比和高击穿电压特性的两端开关器件。 这些装置可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。 开关器件包括两个电极和位于电极之间的宽带半导体材料层。 根据一个示例，阴极包括具有低功函数的金属，阳极包括具有p +或p ++类型的导电性的有机材料，并且宽带半导体包括金属氧化物。 阴极和阳极材料之间的功函数差异优选为至少约0.6eV。 可以实现在约15V的电压范围内的至少10,000的开/关电流比。 如果需要，可以在具有低熔点的柔性聚合物基材上形成装置。

公开(公告)号：US20100291721A1

公开(公告)日：2010-11-18

申请号：US12846979

申请日：2010-07-30

Applicant: CHARLES DOUGLAS MACPHERSON ,  Gordana Srdanov ,  Gang Yu

Inventor： CHARLES DOUGLAS MACPHERSON ,  Gordana Srdanov ,  Gang Yu

IPC: H01L33/08

CPC classification number: H01L51/56 ,  H01L27/3246 ,  H01L27/3283 ,  H01L51/0004 ,  H01L51/52

Abstract: Processes for forming an electronic device include forming a first radiation region, a second radiation region spaced apart from the first radiation region, and an insulating region. The insulating region can have a first side and a second side opposite the first side. The first radiation region can lie immediately adjacent to the first side, and the second radiation region can lie immediately adjacent to the second side. Within the insulating region, no other radiation region may lie between the first and second radiation regions, and the insulating region can include an insulating layer that includes a plurality of openings. A process for forming the electronic device can include patterning an insulating layer.

Abstract translation: 用于形成电子器件的工艺包括形成第一辐射区域，与第一辐射区域间隔开的第二辐射区域和绝缘区域。 绝缘区域可以具有与第一侧相对的第一侧和第二侧。 第一辐射区域可以紧邻第一侧面，并且第二辐射区域可以紧邻第二侧面。 在绝缘区域内，在第一和第二辐射区域之间不会有其他辐射区域，并且绝缘区域可以包括包括多个开口的绝缘层。 形成电子器件的方法可以包括图案化绝缘层。

公开(公告)号：US07719499B2

公开(公告)日：2010-05-18

申请号：US11319859

申请日：2005-12-28

Applicant: Gang Yu ,  Runguang Sun

Inventor： Gang Yu ,  Runguang Sun

IPC: G09G3/32

CPC classification number: H01L51/5265 ,  H01L27/3206 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/5088

Abstract: A multi-color pixel array and method includes an organic active layer of a material emitting a first spectral distribution of visible light having a first color; a transparent conducting layer, each of which include portions that correspond to individual pixels and sub-pixels of the array; one or more pairs of electrodes for selectively energizing sub-pixel areas of the organic active layer to generate an emission of visible light of a first spectral distribution; wherein different sub-pixels within individual pixels of the array have different optical thicknesses based at least on corresponding sub-pixel portions of the transparent conducting layer having different optical thicknesses; and wherein at least one sub-pixel of has a selected color different from the first color due to at least one narrowed spectral band being selected out of the first spectral distribution as emitted light is coupled out of the display through the transparent conducting layer.

Abstract translation: 多色像素阵列和方法包括发射具有第一颜色的可见光的第一光谱分布的材料的有机活性层; 透明导电层，每个透明导电层包括对应于阵列的各个像素和子像素的部分; 一对或多对电极，用于选择性地激励有机活性层的子像素区域以产生第一光谱分布的可见光的发射; 其中所述阵列的各个像素内的不同子像素至少基于具有不同光学厚度的透明导电层的相应子像素部分具有不同的光学厚度; 并且其中至少一个子像素具有与第一颜色不同的选定颜色，因为当发射的光通过透明导电层耦合到显示器外时，由于从第一光谱分布中选出的至少一个变窄的光谱带。

公开(公告)号：US07667229B2

公开(公告)日：2010-02-23

申请号：US11270129

申请日：2005-11-09

Applicant: Jian Wang ,  Gang Yu

Inventor： Jian Wang ,  Gang Yu

IPC: H01L35/24

CPC classification number: H01L27/3253 ,  H01L27/30 ,  H01L27/3211 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/5212 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/568 ,  Y02E10/549

Abstract: An electronic device can include a first workpiece including at least 4,000 electronic components that each include a corresponding electrode and a second workpiece including at least one conductor. The electronic device can also include at least 4,000 conductive members that are substantially directly bonded to the corresponding electrodes and the at least one conductor.

Abstract translation: 电子设备可以包括第一工件，其包括至少4,000个电子部件，每个电子部件包括相应的电极和包括至少一个导体的第二工件。 电子设备还可以包括至少4,000个导电构件，其基本上直接接合到相应的电极和至少一个导体。

公开(公告)号：US20100012932A1

公开(公告)日：2010-01-21

申请号：US12173995

申请日：2008-07-16

Applicant: Chan-Long Shieh ,  Gang Yu

Inventor： Chan-Long Shieh ,  Gang Yu

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

Abstract: A fabrication method is used in conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick and the upper major surface and the lower major surface have material in abutting engagement to form underlying interfaces and overlying interfaces. The method of fabrication includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces to adjust the carrier density in the adjacent metal oxide by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement. The method also includes one or both steps of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer.

Abstract translation: 一种制造方法与具有小于100nm厚的金属氧化物活性层的半导体器件结合使用，并且上主表面和下主表面具有邻接接合的材料以形成底层界面和上覆界面。 制造方法包括通过选择用于金属氧化物活性层的金属氧化物并通过选择用于邻接接合的材料的特定材料来控制下面的界面和上覆界面中的界面相互作用来调节相邻金属氧化物中的载流子密度。 该方法还包括一个或两个步骤，通过对形成下面界面的组分的下层材料进行表面处理来控制底层界面中的相互作用，并且通过在将材料沉积在其上的材料之前进行的金属氧化物膜的表面处理来控制上覆界面中的相互作用 金属氧化物层。

公开(公告)号：US07572655B2

公开(公告)日：2009-08-11

申请号：US11830530

申请日：2007-07-30

Applicant: Matthew Dewey Hubert ,  Matthew Stevenson ,  Patrick Hahn ,  Frank P. Uckert ,  Gang Yu

Inventor： Matthew Dewey Hubert ,  Matthew Stevenson ,  Patrick Hahn ,  Frank P. Uckert ,  Gang Yu

IPC: H01L21/00

CPC classification number: H01L51/5275 ,  H01L27/3246 ,  H01L27/3283

Abstract: An electronic device includes a radiation-emitting component, a radiation-responsive component, or a combination thereof. In one embodiment, the electronic device includes a substrate and a first structure overlying the substrate. The electronic device also includes a second structure that includes a first layer, wherein the first layer has a first refractive index, and the first layer includes a first edge. The electronic device further includes a second layer overlying at least portions of the first structure and the second structure at the first edge. The second layer has a second refractive index that is lower than the first refractive index. In another embodiment, the first structure includes a layer having a perimeter and a pattern lying within the perimeter. The pattern extends at least partly though the first layer to define an opening with a first edge. In another embodiment, a process is used to form the electronic device.

Abstract translation: 电子设备包括辐射发射部件，辐射响应部件或其组合。 在一个实施例中，电子设备包括衬底和覆盖衬底的第一结构。 电子设备还包括第二结构，其包括第一层，其中第一层具有第一折射率，并且第一层包括第一边缘。 电子设备还包括在第一边缘处覆盖第一结构和第二结构的至少部分的第二层。 第二层具有低于第一折射率的第二折射率。 在另一个实施例中，第一结构包括具有位于周边内的周长和图案的层。 图案至少部分地延伸穿过第一层以限定具有第一边缘的开口。 在另一个实施例中，使用一个过程来形成电子设备。