Optoelectronic device based on dual micro-cavity structure

    公开(公告)号:US11950448B2

    公开(公告)日:2024-04-02

    申请号:US17681088

    申请日:2022-02-25

    CPC classification number: H10K50/852 H10K50/11 H10K50/818 H10K50/828

    Abstract: The present disclosure relates to an optoelectronic device based on a dual micro-cavity structure, and more particularly, to a technology that simultaneously realizes the high Q factors of the three primary colors in an optoelectronic device based on a dual micro-cavity structure. The optoelectronic device according to one embodiment of the present disclosure is applied to a self-emissive device, and includes a first reflector layer, an active cavity layer formed on the first reflector layer, a second reflector layer formed on the active cavity layer, an external cavity layer formed on the second reflector layer, a third reflector layer formed on the external cavity layer, and a passivation layer formed on the third reflector layer, wherein a first micro-cavity corresponding to the first and second reflector layers and a second micro-cavity corresponding to the second and third reflector layers may be generated.

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