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201.发明公开公开(公告)号：US20240191392A1
公开(公告)日：2024-06-13
申请号：US18588308
申请日：2024-02-27
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
Inventor： Akiyoshi HORIAI , Takeshi OKAMOTO , Takahiro KANDA , Norihiro HOSHINO , Kiyoshi BETSUYAKU , Isaho KAMATA , Hidekazu TSUCHIDA , Takashi KANEMURA
Abstract: A manufacturing method of a silicon carbide single crystal includes growing the silicon carbide single crystal on a surface of a seed crystal by supplying a supply gas including a raw material gas of silicon carbide to the surface of the seed crystal and controlling an environment so that at least a part inside the heating vessel is 2500° C. or higher. The growing the silicon carbide single crystal includes controlling a temperature distribution ΔT in a radial direction centering on central axis of the seed crystal and the silicon carbide single crystal satisfies a radial direction temperature condition of ΔT≤10° ° C. on the surface of the seed crystal before the growing of the silicon carbide single crystal and on a growth surface of the silicon carbide single crystal during the growing of the silicon carbide single crystal.
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公开(公告)号：US11988905B2
公开(公告)日：2024-05-21
申请号：US17829153
申请日：2022-05-31
Inventor： Seita Iwahashi
IPC: G02F1/025
CPC classification number: G02F1/025
Abstract: A phase shifter includes a substrate, waveguides and a wiring portion. The substrate includes optical waveguide regions and contact regions. Each contact region has contact portions. The waveguides are disposed at the substrate, and each of the waveguides accumulates carriers to modulate a phase of light for guiding propagation of the light. The wiring portion electrically connects each of the waveguides and each of the contact portions. Each of the contact portions connecting each of the waveguides to a corresponding one of electrodes to inject the carriers into each of the waveguides. Each of the waveguides has a lengthwise direction defined as a first direction, and a direction that is perpendicular to the first direction and is parallel to a surface of the substrate is defined as a second direction. The optical waveguide regions and the contact regions are disposed to be alternately aligned along the second direction.
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公开(公告)号：US20240145423A1
公开(公告)日：2024-05-02
申请号：US18476434
申请日：2023-09-28
Inventor： TOMOHITO IWASHIGE
CPC classification number: H01L24/32 , H01L23/36 , H01L24/29 , H01L2224/2919 , H01L2224/32245
Abstract: A connection structure includes: a first member; a second member arranged to oppose the first member and made of a material having a coefficient of linear expansion different from that of the first member; and a connection member that connects the first member and the second member with each other. The connection member includes a highly heat-resistant resin material, a carbon material made of carbon atom, and a void layer.
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公开(公告)号：US20240136409A1
公开(公告)日：2024-04-25
申请号：US18471463
申请日：2023-09-20
Inventor： Hideyuki UEHIGASHI
IPC: H01L29/36 , C30B29/36 , H01L29/16 , H01L29/78 , H01L29/872
CPC classification number: H01L29/36 , C30B29/36 , H01L29/1608 , H01L29/7813 , H01L29/872 , C30B25/20
Abstract: A silicon carbide wafer includes a substrate made of silicon carbide and an epitaxial layer made of silicon carbide and disposed on the substrate. A concentration of carbon vacancies in the substrate and the epitaxial layer continuously decreases from the substrate toward the epitaxial layer. The concentration of the carbon vacancies in the substrate is 3.0×1015 cm−3 or more.
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公开(公告)号：US11967634B2
公开(公告)日：2024-04-23
申请号：US17824236
申请日：2022-05-25
Inventor： Kensuke Nagata , Yohei Iwahashi , Ryota Suzuki , Katsuhiko Hamasaki
IPC: H01L29/66 , H01L29/423 , H01L29/808
CPC classification number: H01L29/66893 , H01L29/4236 , H01L29/808
Abstract: A semiconductor device includes a semiconductor element. The semiconductor element has a semiconductor layer, a first-conductivity-type layer, a saturation current suppression layer, a current dispersion layer, a base region, a source region, trench gate structures, an interlayer insulation film, a source electrode, a drain electrode, and a second deep layer. The first-conductivity-type layer is disposed above the semiconductor layer. The saturation current suppression layer disposed above the first-conductivity-type layer includes a first deep layer and a JEFT portion. The base region is disposed above the saturation current suppression layer. The source region and the contact region are disposed above the region. Each of the trench gate structures has a gate trench, a gate insulation film, and a gate electrode. The second deep layer is disposed among the trench gate structures and is connected to the first deep layer.
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Patent Agency Ranking
206.发明公开公开(公告)号：US20240095932A1
公开(公告)日：2024-03-21
申请号：US18470332
申请日：2023-09-19
CPC classification number: G06T7/246 , G06F18/24 , G06T7/277 , G06T7/73 , G06T2207/10028 , G06T2207/20081 , G06T2207/30252
Abstract: A point cloud data is connected with a related data. Multiple sets of point cloud data are prepared. Each point cloud data includes information of a point cloud connected to three-dimensional position information, and each point cloud data is connected to acquisition time. At least one group is generated by classifying the point cloud, and the group is assigned to a position label and a moving body label. A moving route of the group with a moving body on-flag is predicted based on the position label of the group. The group is replaced with a position at acquisition time of the related data according to the moving route, and the acquisition time of the related data is connected to the group.
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公开(公告)号：US20240038711A1
公开(公告)日：2024-02-01
申请号：US18359976
申请日：2023-07-27
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.
Inventor： TERUAKI KUMAZAWA , MASASHI UECHA , YUJI NAGUMO , MASARU OKUDA , MASATAKE NAGAYA , MITSURU KITAICHI , AKIRA MORI , NAOYA KIYAMA , MASAKAZU TAKEDA
IPC: H01L23/00
CPC classification number: H01L24/29 , H01L24/27 , H01L2224/29083 , H01L2224/29155 , H01L2224/29166 , H01L2224/29144 , H01L2224/29019 , H01L2224/2784
Abstract: A semiconductor device includes a semiconductor substrate and a metal layer disposed on a surface of the semiconductor substrate. The metal layer includes a first metal layer and a second metal layer. The second metal layer covers a surface of the first metal layer and has a higher solder wettability than the first metal layer. The second metal layer is exposed on a main surface of the metal layer. The first metal layer is exposed on a side surface of the metal layer. The metal layer has a protruding portion on the main surface. The protruding portion extends to make one round along an outer peripheral edge of the main surface.
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公开(公告)号：US20240038590A1
公开(公告)日：2024-02-01
申请号：US18360322
申请日：2023-07-27
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.
Inventor： MASASHI UECHA , YUJI NAGUMO , MASARU OKUDA , MASATAKE NAGAYA , MITSURU KITAICHI , AKIRA MORI , NAOYA KIYAMA , MASAKAZU TAKEDA
IPC: H01L21/78 , H01L21/304
CPC classification number: H01L21/78 , H01L21/304
Abstract: A semiconductor device includes a semiconductor substrate having a quadrangular shape when viewed from above and having a front surface, a rear surface opposite to the front surface, and four side surfaces connecting the front surface and the rear surface. Each of the side surfaces has a step section in which a plurality of protruding portions and a plurality of recessed portions alternately and repeatedly appear along a direction in which a peripheral edge of the front surface of the semiconductor substrate extends.
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公开(公告)号：US20240030056A1
公开(公告)日：2024-01-25
申请号：US18324277
申请日：2023-05-26
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.
Inventor： MASASHI UECHA , YUJI NAGUMO , MASARU OKUDA , MASATAKE NAGAYA , MITSURU KITAICHI , AKIRA MORI , NAOYA KIYAMA , MASAKAZU TAKEDA
IPC: H01L21/683 , H01L21/304 , H01L21/78
CPC classification number: H01L21/6836 , H01L21/3043 , H01L21/78 , H01L2221/68327
Abstract: A manufacturing method of a semiconductor device includes preparing a semiconductor substrate having a plurality of element regions and having a first surface and a second surface opposite to each other, forming a crack extending in a thickness direction of the semiconductor substrate along a boundary between the plurality of element regions by pressing a pressing member against the first surface of the semiconductor substrate along the boundary, forming a metal film over the plurality of element regions on the first surface of the semiconductor substrate after the forming of the crack, and dividing the semiconductor substrate and the metal film along the boundary by pressing a dividing member against the semiconductor substrate along the boundary from a direction facing the second surface of the semiconductor substrate after the forming of the metal film.
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公开(公告)号：US20240018687A1
公开(公告)日：2024-01-18
申请号：US18350307
申请日：2023-07-11
Inventor： Hiroaki FUJIBAYASHI , Hirotaka MORI , Takayuki SATOMURA , Shigeyuki TAKAGI
IPC: C30B25/12 , C30B25/14 , C30B25/16 , C23C16/458
CPC classification number: C30B25/12 , C30B25/14 , C30B25/165 , C23C16/4584 , C23C16/4585
Abstract: A semiconductor wafer manufacturing apparatus includes a susceptor. The susceptor has a plate shape having a first surface and a second surface opposite to the first surface, and is disposed on a cylindrical member of a rotating device in such a manner that the first surface faces a reaction chamber and the second surface faces a hollow chamber surrounded by the cylindrical member and the susceptor. The susceptor has a recessed portion for accommodating a base wafer on the first surface, and the recessed portion has such a size that a gap is provided between a side surface of the recessed portion and the base wafer. The recessed portion has a bottom part and has at least one through hole penetrating through the bottom part.
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