摘要:
A method for producing a SiC epitaxial wafer according to the present embodiment includes: an epitaxial growth step of growing the epitaxial layer on the SiC single crystal substrate by feeding an Si-based raw material gas, a C-based raw material gas, and a gas including a Cl element to a surface of a SiC single crystal substrate, in which the epitaxial growth step is performed under growth conditions that a film deposition pressure is 30 torr or less, a Cl/Si ratio is in a range of 8 to 12, a C/Si ratio is in a range of 0.8 to 1.2, and a growth rate is 50 μm/h or more from an initial growth stage.
摘要:
In a canister horizontally installed and housed inside a concrete silo, at least two temperatures out of a temperature TB at a canister bottom portion to be one end portion in a lateral direction in a horizontally-installed attitude, a temperature TSB at a canister side surface lower portion located below a horizontal plane passing through a center of the canister, a temperature TT at a canister lid portion to be the other end portion in the lateral direction, and a temperature TST at a canister side surface upper portion located above the horizontal plane passing through the center of the canister are monitored, and occurrence of leakage of an inert gas inside the canister is detected when there is a change in a temperature difference between the at least two temperatures.
摘要:
A method for detecting gas leakage from a radioactive material sealed container includes measuring a temperature at a bottom portion of a metallic sealed container. A feeding air temperature of external air passing between the metallic sealed container and a concrete-made storage container is also measured. Presence of leakage of inactive gas is determined by comparing the temperatures or by utilizing a physical amount calculated by using the temperatures.
摘要:
The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
摘要翻译:本发明提供一种半导体结构,其至少包括具有α型晶体结构的p型碳化硅单晶层,其含有杂质浓度为1×1019 cm -3以上的铝,厚度为50μm,或 更大 还提供了一种制造本发明的半导体结构的方法,该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体,其中外延生长步骤在1500℃至1,700℃的温度条件下进行,压力条件为5×10 3 Pa至25×10 3 Pa。
摘要:
The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
摘要翻译:本发明提供一种半导体结构,其至少包括具有α型晶体结构的p型碳化硅单晶层,其含有杂质浓度为1×1019 cm -3以上的铝,厚度为50μm,或 更大 还提供了一种制造本发明的半导体结构的方法,该方法至少包括将碳化硅源和铝源引入并外延生长的p型碳化硅单晶层的外延生长步骤在由碳化硅单体制成的基底层上 具有α型晶体结构的晶体,其中外延生长步骤在1500℃至1,700℃的温度条件下进行,压力条件为5×10 3 Pa至25×10 3 Pa。
摘要:
The present invention provides a Bi2223 based thick film that does not peel off when a thermal or a mechanical shock is applied to a base or an oxide superconductor thick film or the like in the middle of a manufacturing process and a method of manufacturing the same An oxide superconductor paste 1 having a mixing ratio of Bi2212 composition is applied to a base 3, dried, burned, and thereafter burned at a temperature approximate to its melting point to obtain a partially molten layer 4. Next, an oxide superconductor paste 2 having a mixing ratio of Bi2223 composition is applied to the partially molten layer 4, dried, burned, compressed by a CIP, and thereafter repeatedly burned and compressed for a predetermined number of times to obtain the base 3 having a desired superconductor thick film 5 formed thereon.
摘要:
The present invention relates to high-density coal-water mixed fuel and a producing method thereof and aims to reduce an amount of dispersant to be used in the coal-water mixed fuel having the good fluidity with the increased density and obtain the a coal-water mixed fuel from pulverized coals produced by dry milling at low cost. According to this invention, in case of obtaining the high-density coal-water mixed fuel such as a CWM by mixing the pulverized coals ground to provide a predetermined particle size distribution, water and the dispersant, the hydrophilic colloid which causes the protective effect with respect to the pulverized coals is added and mixed preferably before adding the dispersant so that the high-density coal-water mixed fuel which includes the hydrophilic colloid and a reduced amount of a surface active agent used can be provided. An amount of the hydrophilic colloid to be added is less than 1 wt % of the entire CWM and larger than an amount for causing reciprocal aggregation with the pulverized coals, or more preferably it is in the order from ppm to ppt. Further, when the pulverized coals are rubbed together and the angles thereof are shaved off for production from the pulverized coals, the pulverized coals are spheroidized without extremely being minimized from their original particle size, and superfine particles in the coal particles are generated, thereby enabling adjustment to provide a preferable particle size distribution as the CWM.
摘要:
A cooling air amount adjustment device of a concrete cask is provided. The device includes at least one of an air outlet port opening level adjustment mechanism and an air inlet port opening level adjustment mechanism which are adapted to automatically perform adjustment to reduce a flow rate of a cooling air when a temperature of the cooling air at an air outlet port is lower than an adjustment reference temperature, and adjustment to increase the flow rate of the cooling air so as to restore the flow rate of the cooling air when the temperature of the cooling air at the air outlet port is higher than the adjustment reference temperature.
摘要:
A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
摘要:
A method to prevent stress corrosion cracking of a storage canister 1, wherein stress corrosion cracking is prevented by applying a compressive stress to a range where a tensile residual stress is generated on a metallic body 2 by welding a cover 4 to a top 2a of the body 2. A first compressive stress is applied beforehand to a range L of the body 2 where a tensile residual stress is expected to be generated by the welding of the cover 4, the tensile residual stress is canceled by welding the cover 4 with a compressive residual stress generated in the range L, and then a second compressive stress is applied so as to generate a compressive residual stress over the range L.