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    DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
    201.
    发明申请
    DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200052004A1

    公开(公告)日：2020-02-13

    申请号：US16653007

    申请日：2019-10-15

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

    IPC: H01L27/12 ,  G02F1/1345 ,  H01L29/786 ,  H01L29/66 ,  H01L29/04

    Abstract: One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.

    LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE
    202.
    发明申请
    LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190386141A1

    公开(公告)日：2019-12-19

    申请号：US16555275

    申请日：2019-08-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

    IPC: H01L29/786 ,  H01L27/02 ,  H01L27/12

    Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leadind to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

    SEMICONDUCTOR DEVICE
    205.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190165003A1

    公开(公告)日：2019-05-30

    申请号：US16248978

    申请日：2019-01-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

    Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.

    ENVIRONMENTAL SENSOR OR SEMICONDUCTOR DEVICE
    206.
    发明申请
    ENVIRONMENTAL SENSOR OR SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190149895A1

    公开(公告)日：2019-05-16

    申请号：US16139934

    申请日：2018-09-24

    Applicant: Semiconductor Energy Laboratory Co., LTD.

    Inventor： Jun KOYAMA

    IPC: H04Q9/00 ,  G08C17/02

    Abstract: To provide an environmental sensor with reduced power consumption.A semiconductor device includes a first sensor, a second sensor, a control circuit, a transmission amplifier, a modulation circuit, a memory device, an analog-to-digital converter circuit, and an antenna. The memory device and the analog-to-digital converter circuit each include a transistor in which an oxide semiconductor is formed in a channel region. The second sensor is an optical sensor, and has a function of transmitting a trigger signal to the control circuit when receiving laser light. The control circuit has a function of transmitting a control signal to the first sensor, the transmission amplifier, the modulation circuit, the memory device, and the analog-to-digital converter circuit when receiving the trigger signal. The first sensor is a sensor that senses a physical or chemical quantity, and the measured data is subjected to digital conversion by the analog-to-digital converter circuit and stored in the memory device. In addition, the data is transmitted as an electromagnetic wave signal from the antenna through the modulation circuit and the transmission amplifier.

    Semiconductor Device And Manufacturing Method Thereof
    209.
    发明申请
    Semiconductor Device And Manufacturing Method Thereof 审中-公开

    公开(公告)号：US20180269330A1

    公开(公告)日：2018-09-20

    申请号：US15919437

    申请日：2018-03-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

    IPC: H01L29/786 ,  H01L29/04 ,  H01L29/45 ,  H01L29/24 ,  H01L29/66

    Abstract: A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.

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