公开(公告)号：US11753589B2

公开(公告)日：2023-09-12

申请号：US17383814

申请日：2021-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Eun Joo Jang ,  Yong Wook Kim

IPC: C09K11/88 ,  C01G9/00 ,  C01G15/00 ,  C09K11/56 ,  C09K11/62 ,  C09K11/70 ,  C09K11/02 ,  B82Y20/00 ,  B82Y30/00 ,  H10K50/115

CPC classification number: C09K11/883 ,  C01G9/006 ,  C01G15/00 ,  C09K11/025 ,  C09K11/565 ,  C09K11/621 ,  C09K11/703 ,  B82Y20/00 ,  B82Y30/00 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/60 ,  H10K50/115

Abstract: A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

公开(公告)号：US11746289B2

公开(公告)日：2023-09-05

申请号：US17407260

申请日：2021-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  POSTECH Research and Business Development Foundation

Inventor： Yong Wook Kim ,  Yong Ju Kwon ,  Sungjee Kim ,  Jihyun Min ,  Yuho Won ,  Eun Joo Jang ,  Hyo Sook Jang ,  Eunjae Lee ,  Kyuhyun Bang ,  Anastasia Agnes ,  Jeongmin Kim

IPC: C09K11/72 ,  C09K11/70 ,  C09K11/08 ,  C01B25/08 ,  B82Y40/00 ,  B82Y20/00

CPC classification number: C09K11/72 ,  C01B25/087 ,  C09K11/0883 ,  C09K11/70 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2002/54 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/50 ,  C01P2004/64

Abstract: The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.

公开(公告)号：US11710448B2

公开(公告)日：2023-07-25

申请号：US17578173

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Oul Cho ,  Tae Hyung Kim ,  Ilyoung Lee ,  Eun Joo Jang ,  Won Sik Yoon

IPC: G09G3/32 ,  H10K50/115

CPC classification number: G09G3/32 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/08 ,  G09G2320/043 ,  H10K50/115

Abstract: A light emitting element includes a first electrode, a second electrode, and a light emission layer interposed between the first electrode and the second electrode, where an emission efficiency of the light emission layer varies based on a voltage applied to at least one selected from the first electrode and the second electrode.

公开(公告)号：US11702593B2

公开(公告)日：2023-07-18

申请号：US17186434

申请日：2021-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Yong Wook Kim ,  Ji-Yeong Kim ,  Eun Joo Jang ,  Sungwoo Hwang

IPC: C09K11/88 ,  C09K11/02 ,  H10K50/115 ,  H10K59/38 ,  B82Y40/00 ,  F21V8/00 ,  G02F1/1335 ,  B82Y20/00

CPC classification number: C09K11/883 ,  C09K11/02 ,  H10K50/115 ,  H10K59/38 ,  B82Y20/00 ,  B82Y40/00 ,  G02B6/005 ,  G02F1/133614 ,  G02F2202/36

Abstract: A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

公开(公告)号：US11667119B2

公开(公告)日：2023-06-06

申请号：US17394698

申请日：2021-08-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Ho Kim ,  Eun Joo Jang ,  Tae Hyung Kim ,  Hyo Sook Jang ,  You Jung Chung

IPC: B41J1/16 ,  B41J2/16 ,  B41J2/045 ,  H01L21/56

CPC classification number: B41J2/164 ,  B41J2/0458 ,  B41J2/04581 ,  B41J2/1601 ,  H01L21/56 ,  B41J2/1603 ,  B41J2/1604

Abstract: An inkjet printhead includes a head body in which a first fine channel that is connected to an ink inlet and thus guides an inflow of ink, a second fine channel that is disposed below the first fine channel, communicated with the first fine channel through a connection via hole, and guides an outflow of the ink by being connected to an ink outlet, and a nozzle that is opened downward from the second fine channel are defined, and a micro heater that is disposed closer to the connection via hole in an upper portion of the first fine channel than to an end of the first fine channel where the first fine channel is connected to the ink inlet or an end of the second fine channel where the second fine channel is connected to the ink outlet.

公开(公告)号：US11659725B2

公开(公告)日：2023-05-23

申请号：US16921188

申请日：2020-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejae Lee ,  Sung Woo Kim ,  Eun Joo Jang ,  Dae Young Chung ,  Moon Gyu Han

IPC: H01L51/50

CPC classification number: H01L51/502 ,  H01L51/5056 ,  H01L51/5092

Abstract: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

公开(公告)号：US11639466B2

公开(公告)日：2023-05-02

申请号：US16851520

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Wook Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Ji-Yeong Kim

IPC: C09K11/88 ,  C09K11/02 ,  F21V8/00 ,  G02F1/13357 ,  H01L27/32 ,  C09K11/08 ,  C09K11/56 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

公开(公告)号：US11637259B2

公开(公告)日：2023-04-25

申请号：US16943174

申请日：2020-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonkyung Lee ,  Eun Joo Jang ,  Hongkyu Seo ,  Dae Young Chung

IPC: H01L51/50 ,  C09K11/88 ,  C09K11/08 ,  C09K11/02 ,  H01L51/00 ,  B82Y40/00 ,  B82Y20/00

Abstract: An electroluminescent device and a display device including the device are disclosed, wherein the electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; an emission layer disposed on the hole transport layer, the emission layer including quantum dots;
a self-assembled monomolecular layer disposed on the emission layer, the self-assembled monomolecular layer including self-assembled monomolecules; an electron transport layer disposed on the self-assembled monomolecular layer; and a second electrode disposed on the electron transport layer.

公开(公告)号：US11624027B2

公开(公告)日：2023-04-11

申请号：US17366429

申请日：2021-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Hwea Yoon Kim ,  Yuho Won

IPC: C09K11/88 ,  C09K11/56 ,  C01B19/00 ,  C01G9/08 ,  C09K11/62 ,  B82Y20/00 ,  H01L51/50 ,  B82Y40/00

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US11594698B2

公开(公告)日：2023-02-28

申请号：US16913575

申请日：2020-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Young Chung ,  Hongkyu Seo ,  Yeonkyung Lee ,  Eun Joo Jang

IPC: H01L51/50 ,  H01L51/52

Abstract: An electronic device includes a first electrode and a second electrode facing each other, an emission layer comprising a plurality of quantum dots, wherein the emission layer is disposed between the first electrode and the second electrode; a first charge auxiliary layer disposed between the first electrode and the emission layer; and an optical functional layer disposed on the second electrode on a side opposite the emission layer, wherein the first electrode includes a reflecting electrode, wherein the second electrode is a light-transmitting electrode, wherein a region between the optical functional layer and the first electrode comprises a microcavity structure, and a refractive index of the optical functional layer is greater than or equal to a refractive index of the second electrode.