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    Method for producing group III nitride single crystal
    211.
    发明授权
    Method for producing group III nitride single crystal 有权
    制备III族氮化物单晶的方法

    公开(公告)号：US09234299B2

    公开(公告)日：2016-01-12

    申请号：US12003231

    申请日：2007-12-20

    Applicant: Takehiro Yoshida

    Inventor： Takehiro Yoshida

    IPC: C30B25/02 ,  C30B29/40 ,  C30B25/18

    CPC classification number: C30B29/403 ,  C30B25/02 ,  C30B25/18

    Abstract: A method for producing a group III nitride single crystal (ingot) includes providing a seed crystal comprising a first crystal face that is perpendicular to a growth direction of the single crystal and has a first predetermined area, and a second crystal face that is inclined to the growth direction and has a second predetermined area and growing the group III nitride single crystal on the first crystal face and the second crystal face by controlling a growth condition of the single crystal so as not to change the first predetermined area and the second predetermined area. A method for producing a group III nitride single crystal substrate includes further cutting the group III nitride single crystal substrate off from the grown group III nitride single crystal (ingot).

    Abstract translation: 一种III族氮化物单晶（锭）的制造方法包括提供包含垂直于单晶生长方向的第一晶面并具有第一规定区域的晶种，以及第二晶面， 生长方向并且具有第二预定区域，并且通过控制单晶的生长条件而在第一晶面和第二晶面上生长III族氮化物单晶，以便不改变第一预定区域和第二预定区域 。 制备III族氮化物单晶衬底的方法包括从生长的III族氮化物单晶（锭）中进一步切割III族氮化物单晶衬底。

    Wavelength selective switch
    212.
    发明授权
    Wavelength selective switch 有权
    波长选择开关

    公开(公告)号：US08606104B2

    公开(公告)日：2013-12-10

    申请号：US13040479

    申请日：2011-03-04

    Applicant: Takehiro Yoshida ,  Koji Matsumoto ,  Satoshi Watanabe ,  Masato Narusawa ,  Hirofumi Eto

    Inventor： Takehiro Yoshida ,  Koji Matsumoto ,  Satoshi Watanabe ,  Masato Narusawa ,  Hirofumi Eto

    IPC: H04J14/00

    CPC classification number: H04J14/02

    Abstract: A wavelength selective switch includes a substrate. On the substrate, the wavelength selective switch includes at least one input port, a dispersive element, a light converging element, a light deflecting member, an output port, and a driving mechanism which drives at least one of the dispersive element, the light condenser element, and the light deflecting member, and drive by the driving mechanism is a rotational drive around an axis perpendicular to the substrate, for the dispersive element, and is a translational drive in a direction of dispersion of wavelength with respect to the substrate, for the light condenser element or the light deflecting member.

    Abstract translation: 波长选择开关包括基板。 在基板上，波长选择开关包括至少一个输入端口，分散元件，聚光元件，光偏转元件，输出端口和驱动机构，其驱动至少一个色散元件，光聚光器 元件和光偏转构件，并且由驱动机构驱动是围绕垂直于衬底的轴线的旋转驱动用于分散元件，并且是相对于衬底的波长色散方向的平移驱动，用于 光聚光元件或光偏转构件。

    Nitride semiconductor substrate, production method therefor and nitride semiconductor device
    213.
    发明授权
    Nitride semiconductor substrate, production method therefor and nitride semiconductor device 有权
    氮化物半导体衬底，其制造方法和氮化物半导体器件

    公开(公告)号：US08592316B2

    公开(公告)日：2013-11-26

    申请号：US12805477

    申请日：2010-08-02

    Applicant: Yuichi Oshima ,  Takehiro Yoshida

    Inventor： Yuichi Oshima ,  Takehiro Yoshida

    IPC: H01L33/00 ,  H01L21/18

    CPC classification number: H01L21/02024 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0075

    Abstract: A nitride semiconductor substrate includes two principal surfaces including an upper surface that is a growth face and a lower surface on its opposite side. An FWHM in a surface layer region at depths of from 0 to 250 nm from the upper surface is narrower than an FWHM in an inner region at depths exceeding 5 μm from the upper surface, where the FWHMs are obtained by X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface.

    Abstract translation: 氮化物半导体衬底包括两个主表面，其包括作为生长面的上表面和其相对侧的下表面。 与上表面相距0〜250nm的表面层区域的FWHM比从上表面超过5μm的内侧区域的FWHM窄，通过X射线摇摆曲线测定得到FWHM 使用相对于上表面倾斜的特定不对称平面的衍射。

    Nitride semiconductor substrate, production method therefor and nitride semiconductor device
    216.
    发明申请
    Nitride semiconductor substrate, production method therefor and nitride semiconductor device 有权
    氮化物半导体衬底，其制造方法和氮化物半导体器件

    公开(公告)号：US20110248281A1

    公开(公告)日：2011-10-13

    申请号：US12805477

    申请日：2010-08-02

    Applicant: Yuichi Oshima ,  Takehiro Yoshida

    Inventor： Yuichi Oshima ,  Takehiro Yoshida

    IPC: H01L33/00 ,  H01L21/18

    CPC classification number: H01L21/02024 ,  C30B25/186 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0075

    Abstract: A nitride semiconductor substrate includes two principal surfaces including an upper surface that is a growth face and a lower surface on its opposite side. An FWHM in a surface layer region at depths of from 0 to 250 nm from the upper surface is narrower than an FWHM in an inner region at depths exceeding 5 μm from the upper surface, where the FWHMs are obtained by X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface.

    Abstract translation: 氮化物半导体衬底包括两个主表面，其包括作为生长面的上表面和其相对侧的下表面。 在距离上表面0〜250nm深度的表面层区域的FWHM比从上表面超过5μm的内侧区域的FWHM窄，其中通过X射线摇摆曲线测量获得FWHM 使用相对于上表面倾斜的特定不对称平面的衍射。

    Temperature compensated spectroscope and optical apparatus
    218.
    发明申请
    Temperature compensated spectroscope and optical apparatus 有权
    温度补偿光谱仪和光学仪器

    公开(公告)号：US20100208262A1

    公开(公告)日：2010-08-19

    申请号：US12592743

    申请日：2009-12-01

    Applicant: Takehiro Yoshida ,  Takeshi Yamazaki ,  Koji Matsumoto ,  Satoshi Watanabe ,  Shohei Kobayashi

    Inventor： Takehiro Yoshida ,  Takeshi Yamazaki ,  Koji Matsumoto ,  Satoshi Watanabe ,  Shohei Kobayashi

    IPC: G01J3/02

    CPC classification number: G01J3/02 ,  G01J3/021 ,  G01J3/0262 ,  G01J3/0291 ,  G01J3/12 ,  G01J3/16 ,  G02B26/0833

    Abstract: A spectroscope includes an emitting portion from where light is output, a dispersive element which is disposed on a side of the light emitting portion, to which the light is output, an incidence portion on which, light dispersed by the dispersive element is incident, and a temperature-compensating element which is disposed between the emitting portion and the incidence portion, and which is such that, an angle of incidence of the light dispersed on the incidence portion becomes almost constant with respect to a change in temperature in an operating temperature range. Moreover, the optical apparatus has such spectroscope in which temperature is compensated.

    Abstract translation: 分光器包括从其输出光的发射部分，布置在光发射部分的一侧的色散元件，光输出到该散射元件，由分散元件分散的光入射到该入射部分;以及 布置在发射部分和入射部分之间的温度补偿元件，并且使得散射在入射部分上的光的入射角相对于工作温度范围内的温度变化几乎恒定 。 此外，光学装置具有补偿温度的分光镜。

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