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公开(公告)号：US11378747B2
公开(公告)日：2022-07-05
申请号：US16919867
申请日：2020-07-02
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor： Yusheng Bian , Won Suk Lee , Abdelsalam A. Aboketaf
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide attenuators and methods of manufacture. The structure includes: a main bus waveguide structure; a first hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a first geometry of material; and a second hybrid waveguide structure evanescently coupled to the main bus waveguide structure and comprising a second geometry of the material.
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公开(公告)号：US11374143B2
公开(公告)日：2022-06-28
申请号：US16740664
申请日：2020-01-13
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Ajey Poovannummoottil Jacob , Yusheng Bian , Steven Shank
IPC: H01L31/103 , G02B6/13 , H01L31/0392 , G02B6/12
Abstract: One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.
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公开(公告)号：US11374092B2
公开(公告)日：2022-06-28
申请号：US16784813
申请日：2020-02-07
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor： John J. Pekarik , Vibhor Jain , Herbert Ho , Claude Ortolland , Qizhi Liu
IPC: H01L29/08 , H01L29/165 , H01L29/737 , H01L29/66
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to virtual bulk in semiconductor on insulator technology and methods of manufacture. The structure includes a heterojunction bipolar transistor formed on a semiconductor on insulator (SOI) wafer with a doped sub-collector material in a buried insulator region under a semiconductor substrate of the SOI wafer.
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公开(公告)号：US11367790B2
公开(公告)日：2022-06-21
申请号：US16551794
申请日：2019-08-27
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Anupam Dutta , Balaji Swaminathan
IPC: G01R31/00 , G01R31/26 , G01R31/28 , H01L21/84 , H01L29/786 , H01L27/12 , H01L29/10 , G06F30/367
Abstract: Test structures for a body-contacted field effect transistor (BCFET) include: a single-pad structure with body contact and probe pad regions connected to a channel region at first and second connection points with a known separation distance between the connection points; and a multi-pad structure with a body contact region connected to a channel region at a first connection point and multiple probe pad regions connected to the channel region at second connection points that are separated from the first connection point by different separation distances. A method includes: determining separation distance-dependent internal body potentials at the second connection points in response to different bias conditions by using either multiple single-pad structures, each having a different separation distance between the connection points, or by using a multi-pad structure; and based on the separation distance-dependent internal body potentials, generating a model representing the BCFET with body-contacted and floating body devices.
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公开(公告)号：US11366269B2
公开(公告)日：2022-06-21
申请号：US16985645
申请日：2020-08-05
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yusheng Bian
Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The edge coupler includes a waveguide core having an end surface and a tapered section that terminates at the end surface. The tapered section of the waveguide core includes a slab layer and a ridge layer on the slab layer. The slab layer and the ridge layer each terminate at the end surface. The slab layer has a first width dimension with a first width at a given location along a longitudinal axis of the waveguide core, the ridge layer has a second width dimension with a second width at the given location along the longitudinal axis of the waveguide core, and the first width is greater than the second width.
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Patent Agency Ranking
公开(公告)号：US20220187676A1
公开(公告)日：2022-06-16
申请号：US17119042
申请日：2020-12-11
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor： Michal Rakowski , Yusheng Bian , Won Suk Lee , Roderick A. Augur
IPC: G02F1/225
Abstract: Embodiments of the disclosure provide an optical ring modulator. The optical ring modulator includes waveguide with a first semiconductor material of a first doping type, and a second semiconductor material having a second doping type adjacent the first semiconductor material. A P-N junction is between the first semiconductor material and the second semiconductor material. A plurality of photonic crystal layers, each embedded within the first semiconductor material or the second semiconductor material, has an upper surface that is substantially coplanar with an upper surface of the waveguide structure.
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公开(公告)号：US20220182058A1
公开(公告)日：2022-06-09
申请号：US17112456
申请日：2020-12-04
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Dzung T. Tran , Shibly S. Ahmed
IPC: H03K19/0185 , H03K19/20
Abstract: Embodiments of the disclosure provide an input output (IO) structure in which complimentary nodes of a level shifter are utilized to logically block the output of the IO structure from switching until both power supplies to the IO structure are powered up. An illustrative level shifter includes: a cross-coupled pair of PFETs configured to output complimentary voltage values at a first node and a second node; a control circuit configured to select which of the complementary voltage values are output to the first node and second node; a logic inverter having an input coupled to the first node and an output coupled to a third node; and a NAND gate having inputs coupled to the second node and third node and that generates a level shifted output.
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公开(公告)号：US11353654B2
公开(公告)日：2022-06-07
申请号：US17031032
申请日：2020-09-24
Applicant: GLOBALFOUNDRIES U.S. INC.
Inventor： Yusheng Bian
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to spiral waveguide absorbers and methods of manufacture. The structure includes: a photonics component; and a waveguide absorber with a grating pattern coupled to a node of the photonics component.
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公开(公告)号：US20220171126A1
公开(公告)日：2022-06-02
申请号：US17109559
申请日：2020-12-02
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Yangyang Liu , Tymon Barwicz
Abstract: Structures for polarization filtering and methods of forming a structure for polarization filtering. A waveguiding structure has a first waveguide core region including a first plurality of bends, a second waveguide core region including a second plurality of bends laterally spaced from the first plurality of bends by a gap, and a third waveguide core region including a third plurality of bends positioned beneath the gap. The first waveguide core region and the second waveguide core region contain a first material. The third waveguide core region contains a second material that differs in composition from the first material.
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公开(公告)号：US20220171123A1
公开(公告)日：2022-06-02
申请号：US17108732
申请日：2020-12-01
Applicant: GLOBALFOUNDRIES U.S. Inc.
Inventor： Mark D. LEVY , Siva P. ADUSUMILLI , Yusheng BIAN
Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a waveguide structure with attenuator and methods of manufacture. The structure includes: a waveguide structure including semiconductor material; an attenuator underneath the waveguide structure; an airgap structure vertically aligned with and underneath the waveguide structure and the attenuator; and shallow trench isolation structures on sides of the waveguide structure and merging with the airgap structure.
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