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    Fluid supply valve
    222.
    发明授权
    Fluid supply valve 有权

    公开(公告)号：US11897270B2

    公开(公告)日：2024-02-13

    申请号：US17257032

    申请日：2018-11-20

    Applicant: Hewlett-Packard Development Company, L.P.

    Inventor： William Scott Osborne

    IPC: B41J2/175 ,  F16K1/12

    CPC classification number: B41J2/17596 ,  B41J2/17509 ,  B41J2/17523 ,  F16K1/123 ,  Y10T137/87949

    Abstract: Some examples include a valve for a printing fluid supply system, the valve including a static portion and a dynamic portion. The static portion includes a stem extending along a longitudinal axis. The stem includes a head, a tail, and a shaft extending between the head and the tail. The dynamic portion is disposed around the stem. The dynamic portion is longitudinally movable along the stem between a closed position and an opened position. The dynamic portion includes a neck and a body extending longitudinally from the neck, the neck to seal around the head in the closed position and fluidly open in the opened position, the body to slidably fluidly seal against a housing between opened and closed positions. A liquid ink pathway and an air pathway are formed between the static portion and the dynamic portion.

    Thin-film transistors
    229.
    发明授权
    Thin-film transistors 有权

    公开(公告)号：US11887993B2

    公开(公告)日：2024-01-30

    申请号：US17424911

    申请日：2019-05-13

    Applicant: Hewlett-Packard Development Company, L.P.

    Inventor： Hsing-Hung Hsieh ,  Kuan-Ting Wu ,  Super Liao

    IPC: H01L27/12 ,  H01L29/786 ,  H10K59/12 ,  H01L29/66

    CPC classification number: H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H10K59/12

    Abstract: The present disclosure is drawn to thin-film transistors, electronic displays that include thin-film transistors, and methods of making thin-film transistors. In one example, a thin-film transistor can include a nonconductive substrate, a semiconductor layer on the nonconductive substrate, a source electrode adjacent a first side of the semiconductor layer and partially overlapping a first peripheral portion of the semiconductor layer, a drain electrode adjacent a second side of the semiconductor layer and partially overlapping a second peripheral portion of the semiconductor layer, an etch stop layer on the semiconductor layer, a gat insulator layer on the etch stop layer, and a gate electrode on the gate insulator layer. The source electrode and the drain electrode do not overlap the etch stop layer.

    Power source devices for power delivery contract selections
    230.
    发明授权
    Power source devices for power delivery contract selections 有权

    公开(公告)号：US11886273B2

    公开(公告)日：2024-01-30

    申请号：US17419774

    申请日：2019-07-31

    Applicant: Hewlett-Packard Development Company, L.P.

    Inventor： Christopher Woodbury ,  Robert C. Brooks

    IPC: G06F1/26 ,  G06F1/32 ,  G06F1/3296

    CPC classification number: G06F1/3296

    Abstract: An example power source device includes a universal serial bus interface to couple to a power sink device, a power supply interface to couple to a power supply, a power measurement controller to measure a total power consumption of the power sink device and the power source device, a power contract manager to select a power delivery contract for the power sink device based on the total power consumption, a power supply rating of the power supply and a previous power delivery contract, and a power delivery controller to deliver power to the power sink device according to the selected power delivery contract.

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