Tumor necrosis factor receptor homologs and nucleic acids encoding the same
    222.
    发明授权
    Tumor necrosis factor receptor homologs and nucleic acids encoding the same 有权
    肿瘤坏死因子受体同源物和编码相同的核酸

    公开(公告)号:US06534061B1

    公开(公告)日:2003-03-18

    申请号:US09548130

    申请日:2000-04-12

    Abstract: The present invention is directed to novel polypeptides having homology to members of the tumor necrosis factor receptor family and to nucleic acid molecules encoding those polypeptides. Also provided herein are vectors and host cells comprising those nucleic acid sequences, chimeric polypeptide molecules comprising the polypeptides of the present invention fused to heterologous polypeptide sequences, antibodies which bind to the polypeptides of the present invention and to methods for producing the polypeptides of the present invention.

    Abstract translation: 本发明涉及与肿瘤坏死因子受体家族的成员具有同源性的新型多肽和编码那些多肽的核酸分子。 本文还提供了包含那些核酸序列的载体和宿主细胞,包含与异源多肽序列融合的本发明的多肽的嵌合多肽分子,与本发明的多肽结合的抗体以及本发明的多肽的制备方法 发明。

    Selective deposition of undoped silicon film seeded in chlorine and hydride gas for a stacked capacitor
    223.
    发明授权
    Selective deposition of undoped silicon film seeded in chlorine and hydride gas for a stacked capacitor 失效
    选择性沉积接种在氯和氢化物气体中的未掺杂的硅膜用于堆叠电容器

    公开(公告)号:US06521507B1

    公开(公告)日:2003-02-18

    申请号:US09653086

    申请日:2000-08-31

    Abstract: A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an anneal to create hemishperical grain (HSG) polysilicon. Multilayer capacitor containers are formed in a non-oxidizing ambient so that no oxide is formed between the layers. The structure formed is planarized to form separate containers made from doped and undoped amorphous silicon layers. Selected ones of undoped layers are seeded in a chlorine containing environment and annealed to form HSG. A dielectric layer and second electrode are formed to complete the cell capacitor.

    Abstract translation: 通过在膜的形成期间流动氯,形成具有增强的选择性的多晶硅膜。 氯作为蚀刻剂,其邻近多晶硅结构的绝缘区域需要形成薄膜。 使用该方法形成用于电容器的底部电极,随后进行退火以产生半透明晶粒(HSG)多晶硅。 多层电容器容器形成在非氧化环境中,使得在层之间不形成氧化物。 所形成的结构被平坦化以形成由掺杂和未掺杂的非晶硅层制成的分离的容器。 将选定的未掺杂层接种在含氯环境中并退火以形成HSG。 形成电介质层和第二电极以完成电池电容器。

    Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
    224.
    发明授权
    Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces 失效
    基于表面之间的温度差处理在半导体处理室中选择的表面的方法

    公开(公告)号:US06395099B1

    公开(公告)日:2002-05-28

    申请号:US09246611

    申请日:1999-02-08

    Applicant: James Pan

    Inventor: James Pan

    CPC classification number: C23C16/4405 Y10S438/905

    Abstract: The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF3) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization (“RTCVD”) systems.

    Abstract translation: 本发明涉及一种通过在所选择的表面之间产生温度差并使表面与相对于另一个所选择的表面的温度差的一端优先与表面反应的反应物接触来处理半导体处理室中的选定表面的方法 表面。 更具体地说,本发明涉及三氟化氮(NF 3)气体用于诸如快速热化学气化(“RTCVD”)系统的冷壁处理室的原位清洗。

    Spelling speech recognition apparatus and method for communications
    225.
    发明授权
    Spelling speech recognition apparatus and method for communications 失效
    拼写语音识别装置和通信方法

    公开(公告)号:US06304844B1

    公开(公告)日:2001-10-16

    申请号:US09538657

    申请日:2000-03-30

    CPC classification number: G10L15/187 G10L15/02 G10L2015/086

    Abstract: An accurate speech recognition system capable of rapidly processing greater varieties of words and operable in many different devices, but without the computational power and memory requirements, high power consumption, complex operating system, high costs, and weight of traditional systems. The utilization of individual letter utterances to transmit words allows voice information transfer for both person-to-person and person-to-machine communication for mobile phones, PDAs, and other communication devices. This invention is an apparatus and method for a speech recognition system comprising a microphone, front-end signal processor for generating parametric representations of speech input signals, a pronunciation database, a letter similarity comparator for comparing the parametric representation of the input signals with the parametric representations of letter pronunciations, and generating a sequence of associations between the input speech and the letters in the pronunciation database, a vocabulary database, a word similarity comparator for comparing an aggregated plurality of the letters with the words in the vocabulary database and generating a sequence of associations between them, and a display for displaying the selected letters and words for confirmation.

    Abstract translation: 一种精确的语音识别系统,能够快速处理更多种类的词语,并可在许多不同的设备中运行,但无需计算能力和内存要求,高功耗,复杂的操作系统,高成本和传统系统的重量。 使用单个字母的话语来传输话语,可以为移动电话,PDA和其他通信设备的个人对个人和个人到机器的通信进行语音信息传输。 本发明是一种用于语音识别系统的装置和方法,其包括麦克风,用于产生语音输入信号的参数表示的前端信号处理器,发音数据库,字母相似性比较器,用于将输入信号的参数表示与参数 字母发音的表示,以及在发音数据库中产生输入语音和字母之间的关联序列,词汇数据库,词汇相似性比较器,用于将汇总的多个字母与词汇数据库中的单词进行比较,并产生序列 它们之间的关联,以及用于显示所选择的字母和单词以进行确认的显示。

    High selectivity etching process for oxides

    公开(公告)号:US06217784B1

    公开(公告)日:2001-04-17

    申请号:US09652426

    申请日:2000-08-31

    CPC classification number: H01L28/40 H01L21/30604 H01L21/31111 H01L21/31116

    Abstract: A process for etching oxides having differing densities which is not only highly selective, but which also produces uniform etches is provided and includes the steps of providing an oxide layer on a surface of a substrate, exposing the oxide layer to a liquid comprising a halide-containing species, and exposing the oxide layer to a gas phase comprising a halide-containing species. The process desirably is used to selectively etch a substrate surface in which the surface of the substrate includes on a first portion thereof a first silicon oxide and on a second portion thereof a second silicon oxide, with the first silicon oxide being relatively more dense than the second silicon oxide, such as, for example, a process which forms a capacitor storage cell on a semiconductor substrate.

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