公开(公告)号：US20220189788A1

公开(公告)日：2022-06-16

申请号：US17513122

申请日：2021-10-28

Applicant: STMicroelectronics Pte Ltd

Inventor： Jing-En LUAN

IPC: H01L21/48 ,  H01L23/498 ,  H01L25/18 ,  H01L25/065 ,  H01L25/00 ,  H01S5/02315 ,  H01S5/02345 ,  H01S5/02218

Abstract: A molded carrier is formed by a unitary body made of a laser direct structuring (LDS) material and includes a blind opening with a bottom surface. The unitary body includes: a floor body portion defining a back side and the bottom surface of the blind opening and an outer peripheral wall body portion defining a sidewall surface of the blind opening. LDS activation followed by electro-plating is used to produce: a die attach pad and bonding pad at the bottom surface; land grid array (LGA) pads at the back side; and vias extending through the floor body portion to make electrical connections between the die attach pad and one LGA pad and between the bonding pad and another LGA pad. An integrated circuit chip is mounted to the die attach pad and wire bonded to the bonding pad. A wafer-scale manufacturing process is used to form the molded carrier.

公开(公告)号：US11231386B2

公开(公告)日：2022-01-25

申请号：US15812731

申请日：2017-11-14

Applicant: STMicroelectronics Pte Ltd

Inventor： Jerome Teysseyre ,  Yonggang Jin ,  Suman Cherian

IPC: G01N27/406 ,  G01N27/407 ,  H05K1/18

Abstract: A compact microelectronic gas sensor module includes electrical contacts formed in such a way that they do not consume real estate on an integrated circuit chip. Using such a design, the package can be miniaturized further. The gas sensor is packaged together with a custom-designed Application Specific Integrated Circuit (ASIC) that provides circuitry for processing sensor signals to identify gas species within a sample under test. In one example, the output signal strength of the sensor is enhanced by providing an additional metal surface area in the form of pillars exposed to an electrolytic gas sensing compound, while reducing the overall package size. In some examples, bottom side contacts are formed on the underside of the substrate on which the gas sensor is formed. Sensor electrodes may be electrically coupled to the ASIC directly, or indirectly by vias.

公开(公告)号：US20210395077A1

公开(公告)日：2021-12-23

申请号：US17344576

申请日：2021-06-10

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En LUAN

IPC: B81B7/00 ,  B81C1/00

Abstract: The present disclosure is directed to a package (e.g., a chip scale package, a wafer level chip scale package (WLCSP), or a package containing a sensor die) with a sensor die on a substrate (e.g., an application-specific integrated circuit die (ASIC), an integrated circuit, or some other type of die having active circuitry) and encased in a molding compound. The sensor die includes a sensing component that is aligned with a centrally located opening that extends through the substrate. The centrally located opening extends through the substrate at an inactive portion of the substrate. The centrally located opening exposes the sensing component of the sensor die to an external environment outside the package.

公开(公告)号：US20210384241A1

公开(公告)日：2021-12-09

申请号：US17326537

申请日：2021-05-21

Applicant: STMicroelectronics Pte Ltd

Inventor： Laurent HERARD ,  David GANI

IPC: H01L27/146

Abstract: A digital image sensor package includes an image sensor substrate and a glass covering. The image sensor substrate carries photodiodes. The glass covering has a bottom surface, a top surface opposite the bottom surface, and a sidewall delimiting a perimeter edge of the glass covering. The glass covering overlies the photodiodes. A surface area of the top surface of the glass covering is greater than a surface area of the bottom surface of the glass covering such that the sidewall is anti-perpendicular to the top and bottom surfaces of the glass.

公开(公告)号：US20210336047A1

公开(公告)日：2021-10-28

申请号：US17217689

申请日：2021-03-30

Applicant: STMicroelectronics Pte Ltd

Inventor： Shin Phay LEE ,  Voon Cheng NGWAN ,  Maurizio Gabriele CASTORINA

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L21/765 ,  H01L29/66

Abstract: An integrated circuit includes a MOSFET device and a monolithic diode device, wherein the monolithic diode device is electrically connected in parallel with a body diode of the MOSFET device. The monolithic diode device is configured so that a forward voltage drop VfD2 of the monolithic diode device is less than a forward voltage drop VfD1 of the body diode of the MOSFET device. The forward voltage drop VfD2 is process tunable by controlling a gate oxide thickness, a channel length and body doping concentration level. The tunability of the forward voltage drop VfD2 advantageously permits design of the integrated circuit to suit a wide range of applications according to requirements of switching speed and efficiency.

公开(公告)号：US20210202419A1

公开(公告)日：2021-07-01

申请号：US17104968

申请日：2020-11-25

Applicant: STMICROELECTRONICS PTE LTD

Inventor： David GANI

IPC: H01L23/00 ,  H01L23/498

Abstract: The present disclosure is directed to a wafer level chip scale package (WLCSP) with various combinations of contacts and Under Bump Metallizations (UBMs) having different structures and different amounts solder coupled to the contacts and UBMs. Although the contacts have different structures and the volume of solder differs, the total standoff height along the WLCSP remains substantially the same. Each portion of solder coupled to each respective contact and UBM includes a point furthest away from an active surface of a die of the WLCSP. Each point of each respective portion of solder is co-planar with each other respective point of the other respective portions of solder. Additionally, the contacts with various and different structures are positioned accordingly on the active surface of the die of the WLCSP to reduce failures that may result from the WLCSP being exposed to thermal cycling or the WLCSP being dropped.

公开(公告)号：US20210159136A1

公开(公告)日：2021-05-27

申请号：US17145028

申请日：2021-01-08

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Yun LIU ,  David GANI

IPC: H01L23/31 ,  H01L23/00 ,  H01L21/78 ,  H01L21/56 ,  H01L21/304 ,  H01L23/28

Abstract: A semiconductor package having a die with a sidewall protected by molding compound, and methods of forming the same are disclosed. The package includes a die with a first surface opposite a second surface and sidewalls extending between the first and second surfaces. A redistribution layer is formed on the first surface of each die. An area of the first surface of the die is greater than an area of the redistribution layer, such that a portion of the first surface of the die is exposed. When molding compound is formed over the die and the redistribution layer to form a semiconductor package, the molding compound is on the first surface of the die between an outer edge of the redistribution layer and an outer edge of the first surface. The molding compound is also on the sidewalls of the die, which provides protection against chipping or cracking during transport.

公开(公告)号：US20210156836A1

公开(公告)日：2021-05-27

申请号：US17166580

申请日：2021-02-03

Applicant: STMICROELECTRONICS S.r.l. ,  STMICROELECTRONICS PTE LTD

Inventor： Malek BRAHEM ,  Hatem MAJERI ,  Olivier LE NEEL ,  Ravi SHANKAR ,  Enrico Rosario ALESSI ,  Pasquale BIANCOLILLO

IPC: G01N33/00 ,  G01N27/12 ,  G01N27/02

Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.

公开(公告)号：US20210080547A1

公开(公告)日：2021-03-18

申请号：US17015521

申请日：2020-09-09

Applicant: STMicroelectronics PTE LTD

Inventor： Jing-En LUAN

IPC: G01S7/481

Abstract: The present disclosure is directed to an optical sensor package with a first assembly and a second assembly with an encapsulant extending between and coupling the first assembly and the second assembly. The first assembly includes a first substrate, a first die on the first substrate, a transparent material on the first die, and an infrared filter on the transparent material. The second assembly includes a second substrate, a second die on the second substrate, a transparent material on the second die, and an infrared filter on the transparent material. Apertures are formed through the encapsulant aligned with the first die and the second die. The first die is configured to transmit light through one aperture, wherein the light reflects off an object to be detected and is received at the second die through another one of the apertures.

公开(公告)号：US20210035952A1

公开(公告)日：2021-02-04

申请号：US16935081

申请日：2020-07-21

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Yong CHEN ,  David GANI

IPC: H01L25/065 ,  H01L21/56 ,  H01L25/16 ,  H01L23/13 ,  H01L23/498 ,  H01L23/00

Abstract: A multi-chip package including a first integrated circuit and a second integrated circuit. The first integrated circuit includes a first side having a first conductive layer, a second side having a second conductive layer, and an edge, the first conductive layer coupled to the second conductive layer at a location adjacent to the edge. The second integrated circuit is coupled to the second conductive layer of the first integrated circuit.