公开(公告)号：US07952265B2

公开(公告)日：2011-05-31

申请号：US12184612

申请日：2008-08-01

Applicant: Takashi Iwaki ,  Tsuyoshi Ibe ,  Masahiro Terada

Inventor： Takashi Iwaki ,  Tsuyoshi Ibe ,  Masahiro Terada

IPC: H01J1/62

CPC classification number: H01J1/316 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: An electron-emitting device, comprising:a pair of device electrodes formed on an insulating substrate; and a conductive film formed to connect the device electrodes and having an electron-emitting portion, wherein the conductive film has a thickness of 3 nm to 50 nm and is made of precious metal and oxide of base metal, a percentage of the base metal among metals contained in the conductive film is 30 mol % or more, and the conductive film has a concentration gradient of the oxide of the base metal in a thickness direction.

Abstract translation: 一种电子发射器件，包括：形成在绝缘衬底上的一对器件电极; 以及形成为连接器件电极并具有电子发射部分的导电膜，其中导电膜的厚度为3nm至50nm，并且由贵金属和贱金属的氧化物制成，贱金属的百分比在 包含在导电膜中的金属为30摩尔％以上，导电膜的厚度方向上的贱金属的氧化物的浓度梯度。

公开(公告)号：US07944137B2

公开(公告)日：2011-05-17

申请号：US12552840

申请日：2009-09-02

Applicant: Shingo Eguchi ,  Yasushi Shimizu ,  Noriaki Oguri

Inventor： Shingo Eguchi ,  Yasushi Shimizu ,  Noriaki Oguri

IPC: H01J1/62

CPC classification number: H01J1/316 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: There is provided an electron source according to the present invention, having a plurality of electron-emitting devices wherein each of the electron-emitting devices has a pair of electrodes, and a plurality of conductive films having respective electron emitting portions, provided between the pair of electrodes so as to be electrically connected to the pair of electrodes, the electron source including: a short-circuit suppressing film which is positioned between the plurality of conductive films and is provided on the electron-emitting device so as to be electrically connected to the pair of electrodes, and mainly contains tungsten (W) and germanium (Ge) nitride, wherein a ratio of the number of tungsten atoms to the number of tungsten and germanium atoms is 0.24 or more in the short-circuit suppressing film, surface resistivity of the short-circuit suppressing film is not less than 1×1010 Ω/square and not more than 1×1013 Ω/square.

Abstract translation: 提供了根据本发明的电子源，其具有多个电子发射器件，其中每个电子发射器件具有一对电极，以及设置在该对之间的具有各自的电子发射部分的多个导电膜 的电极，以与所述一对电极电连接，所述电子源包括：短路抑制膜，其位于所述多个导电膜之间，并且设置在所述电子发射器件上以电连接到 一对电极，主要包含钨（W）和锗（Ge）氮化物，其中钨原子数与钨和锗原子数之比在短路抑制膜中为0.24以上，表面电阻率 的短路抑制膜不小于1×10 10Ω·OHgr·/平方并且不大于1×10 13Ω·平方。

公开(公告)号：US07722424B2

公开(公告)日：2010-05-25

申请号：US11301755

申请日：2005-12-13

Applicant: Junichiro Shinozaki

Inventor： Junichiro Shinozaki

IPC: H01J9/04

CPC classification number: H01J9/027 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/3165

Abstract: There are provided an electron emitter of which deviation in electron emission characteristic is small, a method of manufacturing the electron emitter, and an electro-optical device and an electronic apparatus having the electron emitter. The method of manufacturing an electron emitter, in which electrons are emitted from an electron emission portion formed in a conductive film, comprises forming the conductive film in a pattern on a substrate by the use of a droplet jetting method; selectively removing a part of the conductive film; and forming the electron emission portion in the conductive film.

Abstract translation: 提供了电子发射特性偏差小的电子发射体，制造电子发射体的方法，以及具有电子发射体的电光装置和电子装置。 制造电子发射体的方法，其中电子从形成在导电膜中的电子发射部分发射，包括通过使用液滴喷射方法在衬底上以图案形成导电膜; 选择性地去除导电膜的一部分; 并在导电膜中形成电子发射部分。

公开(公告)号：US20090322206A1

公开(公告)日：2009-12-31

申请号：US12481099

申请日：2009-06-09

Applicant: Akira Shimazu

Inventor： Akira Shimazu

IPC: H01J1/62 ,  H01J19/06 ,  H01J9/02

CPC classification number: H01J9/027 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: Provided is an electron-emitting device which is excellent in electron-emitting efficiency, and may obtain a large electron-emitting amount and stable electron-emitting characteristics. The electron-emitting device includes: a first conductive film and a second conductive film which are provided through a first gap; first carbon films connected to the first conductive film; and second carbon films which are connected to the second conductive film, and are opposed to the first carbon films through second and third gaps. Continuous concave portions are provided in the second and third gaps.

Abstract translation: 提供了电子发射效率优异的电子发射器件，并且可以获得大的电子发射量和稳定的电子发射特性。 电子发射器件包括：通过第一间隙提供的第一导电膜和第二导电膜; 连接到第一导电膜的第一碳膜; 以及与第二导电膜连接并且通过第二和第三间隙与第一碳膜相对的第二碳膜。 连续凹部设置在第二和第三间隙中。

公开(公告)号：US07632536B2

公开(公告)日：2009-12-15

申请号：US11214830

申请日：2005-08-31

Applicant: Tsuyoshi Furuse ,  Shosei Mori ,  Masahiro Terada ,  Tsuyoshi Ibe ,  Makoto Kojima

Inventor： Tsuyoshi Furuse ,  Shosei Mori ,  Masahiro Terada ,  Tsuyoshi Ibe ,  Makoto Kojima

IPC: B05D5/12

CPC classification number: H01J9/027 ,  H01J31/127 ,  H01J2201/3165 ,  H05K3/105 ,  H05K3/386 ,  H05K2203/121

Abstract: A method for producing a pattern of an electroconductive member, comprises: a step of forming on a substrate surface a resin film containing acid group; a step of incorporating into the resin film a liquid containing a metal complex salt and having a pH value of 5 to 7; and a step of baking the resin film to form the electroconductive member from a metal component incorporated into the resin film, thereby improving uniformity and speed of an adsorbing of the metal component into the resin, and providing uniform characteristics of the electroconductive pattern.

Abstract translation: 一种用于制造导电构件的图案的方法，包括：在基板表面上形成含有酸基的树脂膜的步骤; 将含有金属络盐的pH值为5〜7的液体加入树脂膜的工序; 以及从引入到树脂膜中的金属成分烘烤树脂膜以形成导电构件的步骤，从而提高金属成分吸附到树脂中的均匀性和速度，并提供均匀的导电图案特性。

公开(公告)号：US07626324B2

公开(公告)日：2009-12-01

申请号：US11951766

申请日：2007-12-06

Applicant: Takeshi Yamatoda ,  Akihiko Yamano

Inventor： Takeshi Yamatoda ,  Akihiko Yamano

IPC: H01J1/62

CPC classification number: H01J29/028 ,  H01J1/316 ,  H01J17/04 ,  H01J29/864 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/863 ,  H01J2329/8635 ,  H01J2329/864 ,  H01J2329/8645 ,  H01J2329/8655 ,  H01J2329/866

Abstract: An image display apparatus of smaller beam deviation is provided by making smaller the absolute value of an angle formed by an initial velocity vector of an electron emitted from the first electron-emitting devices closest to a spacer 100 and a line parallel to the longitudinal direction of a spacer 100, rather than the absolute value of an angle formed by an initial velocity vector of an electron emitted from the second electron-emitting devices secondary closer to the spacer 100 and the line parallel to the longitudinal direction of the spacer 100.

Abstract translation: 通过使从最靠近间隔物100的第一电子发射器件发射的电子的初始速度矢量和平行于间隔物100的纵向方向的线形成的角度的绝对值更小，从而提供较小的光束偏离的图像显示装置 而不是由靠近隔板100的第二电子发射器件发射的电子的初始速度矢量和平行于间隔物100的纵向方向的线形成的角度的绝对值。

公开(公告)号：US07583016B2

公开(公告)日：2009-09-01

申请号：US11296462

申请日：2005-12-08

Applicant: Michiyo Nishimura ,  Yoji Teramoto ,  Ryoji Fujiwara

Inventor： Michiyo Nishimura ,  Yoji Teramoto ,  Ryoji Fujiwara

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J9/027 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/3165

Abstract: The invention is to provide a producing method for an electron emitting device of field emission type, having sufficient on/off characteristics and capable of efficient electron emission at a low voltage. There is provided a producing method for an electron emitting device including steps of preparing a plurality of electroconductive particles each covered with an insulation material having a thickness of 10 nm or less at least on a part of a surface of the particle, and forming a dipole layer on a surface of the insulation material covering each of the plurality of electroconductive particles.

Abstract translation: 本发明提供一种场发射型电子发射器件的制造方法，其具有足够的导通/截止特性并能够在低电压下有效地发射电子。 提供了一种用于电子发射器件的制造方法，包括以下步骤：至少在所述粒子的一部分表面上制备多个导电粒子，所述多个导电粒子被覆盖有厚度为10nm以下的绝缘材料，并形成偶极子 在绝缘材料的表面上覆盖多个导电颗粒中的每一个。

公开(公告)号：US07547620B2

公开(公告)日：2009-06-16

申请号：US11214944

申请日：2005-08-31

Applicant: Shosei Mori ,  Tsuyoshi Furuse ,  Masahiro Terada ,  Takeru Mizue ,  Kazuhiro Kagami

Inventor： Shosei Mori ,  Tsuyoshi Furuse ,  Masahiro Terada ,  Takeru Mizue ,  Kazuhiro Kagami

IPC: H01L21/20

CPC classification number: H01J9/027 ,  G03F7/0047 ,  G03F7/405 ,  H01J2201/3165 ,  H05K3/105 ,  H05K2203/1105 ,  H05K2203/121

Abstract: A method for producing a film pattern comprises a step of forming a resin film on a substrate surface; a step of incorporating into the resin film a constituent of a conductive film or a semiconductor film; a step of irradiating the resin film with an ultraviolet light; and a step of heating the resin film at a temperature not lower than a decomposition temperature of the resin to form a conductive film or a semiconductor film on the substrate, whereby the resin does not easily generate decomposition residues to improve precision and quality of the produced film pattern.

Abstract translation: 膜图案的制造方法包括在基板表面上形成树脂膜的工序; 在树脂膜中引入导电膜或半导体膜的成分的步骤; 用紫外线照射树脂膜的步骤; 以及在树脂的分解温度以上的温度下加热树脂膜的步骤，在基板上形成导电膜或半导体膜，由此树脂不容易产生分解残留物，从而提高所制造的 电影模式。

公开(公告)号：US07442404B2

公开(公告)日：2008-10-28

申请号：US11406414

申请日：2006-04-19

Applicant: Kazuo Kuroda ,  Noriaki Ohguri ,  Toshifumi Yoshioka ,  Takeo Tsukamoto ,  Yoshio Suzuki

Inventor： Kazuo Kuroda ,  Noriaki Ohguri ,  Toshifumi Yoshioka ,  Takeo Tsukamoto ,  Yoshio Suzuki

IPC: B05D5/12 ,  B05D3/02

CPC classification number: H01J1/316 ,  H01J9/027 ,  H01J2201/3165

Abstract: To provide an antistatic film that requires low power consumption and provides satisfactory electric contact, as a measure for preventing an insulating substrate surface having an electronic device formed thereon from being charged. The electronic device includes: an insulating substrate; a conductor; and a resistance film connected with the conductor, the conductor and the resistance film being formed on the insulating substrate, characterized in that the resistance film has a larger thickness in a connection region with the conductor than a thickness in portions other than the connection region.

Abstract translation: 为了提供需要低功耗并提供令人满意的电接触的抗静电膜，作为防止其上形成有电子器件的绝缘衬底表面带电的措施。 电子装置包括：绝缘基板; 指挥 以及与所述导体连接的电阻膜，所述导体和所述电阻膜形成在所述绝缘基板上，其特征在于，所述电阻膜在与所述导体的连接区域中的厚度大于所述连接区域以外的部分的厚度。

公开(公告)号：US07429821B2

公开(公告)日：2008-09-30

申请号：US11139488

申请日：2005-05-31

Applicant: Yoichi Ando

Inventor： Yoichi Ando

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J29/04 ,  H01J1/316 ,  H01J29/028 ,  H01J29/864 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/8625 ,  H01J2329/864 ,  H01J2329/8645 ,  H01J2329/8665

Abstract: An irregular shift of the electron beam caused by a spacer is compensated without making a design change of the spacer. A rear plate 1 in which an electron source substrate 9 disposed with plural electron-emitting devices 8 emitting the electron is fixed and a face plate 2 in which a metal back 11 for accelerating the electron is formed are disposed in opposition to each other, and these plates are supported by the spacers 3 with constant intervals, and the initial velocity vector of the electron emitted from the electron-emitting device 8 is different according to the distance from the spacer 3.

Abstract translation: 由间隔物引起的电子束的不规则偏移被补偿，而不会使间隔物的设计变化。 设置有发射电子的多个电子发射器件8的电子源衬底9被固定的后板1和形成用于加速电子的金属背11的面板2彼此相对设置，并且 这些板由间隔件3以恒定的间隔支撑，并且从电子发射器件8发射的电子的初始速度矢量根据与间隔件3的距离而不同。