Electron source structure covered with resistance film
    3.
    发明授权
    Electron source structure covered with resistance film 失效
    电阻源结构覆盖电阻膜

    公开(公告)号:US07064475B2

    公开(公告)日:2006-06-20

    申请号:US10740415

    申请日:2003-12-22

    IPC分类号: H01J1/05

    摘要: To provide an antistatic film that requires low power consumption and provides satisfactory electric contact, as a measure for preventing an insulating substrate surface having an electronic device formed thereon from being charged. The electronic device includes: an insulating substrate; a conductor; and a resistance film connected with the conductor, the conductor and the resistance film being formed on the insulating substrate, characterized in that the resistance film has a larger thickness in a connection region with the conductor than a thickness in portions other than the connection region.

    摘要翻译: 为了提供需要低功耗并提供令人满意的电接触的抗静电膜,作为防止其上形成有电子器件的绝缘衬底表面带电的措施。 电子装置包括:绝缘基板; 指挥 以及与所述导体连接的电阻膜,所述导体和所述电阻膜形成在所述绝缘基板上,其特征在于,所述电阻膜在与所述导体的连接区域中的厚度大于所述连接区域以外的部分的厚度。

    Electronic device, electron source and manufacturing method for electronic device
    4.
    发明授权
    Electronic device, electron source and manufacturing method for electronic device 失效
    电子设备,电子源和电子设备的制造方法

    公开(公告)号:US07442404B2

    公开(公告)日:2008-10-28

    申请号:US11406414

    申请日:2006-04-19

    IPC分类号: B05D5/12 B05D3/02

    摘要: To provide an antistatic film that requires low power consumption and provides satisfactory electric contact, as a measure for preventing an insulating substrate surface having an electronic device formed thereon from being charged. The electronic device includes: an insulating substrate; a conductor; and a resistance film connected with the conductor, the conductor and the resistance film being formed on the insulating substrate, characterized in that the resistance film has a larger thickness in a connection region with the conductor than a thickness in portions other than the connection region.

    摘要翻译: 为了提供需要低功耗并提供令人满意的电接触的抗静电膜,作为防止其上形成有电子器件的绝缘衬底表面带电的措施。 电子装置包括:绝缘基板; 指挥 以及与所述导体连接的电阻膜,所述导体和所述电阻膜形成在所述绝缘基板上,其特征在于,所述电阻膜在与所述导体的连接区域中的厚度大于所述连接区域以外的部分的厚度。

    Method for producing a diffraction grating
    5.
    发明授权
    Method for producing a diffraction grating 失效
    用于生产衍射光栅的方法

    公开(公告)号:US5225039A

    公开(公告)日:1993-07-06

    申请号:US882614

    申请日:1992-05-13

    申请人: Noriaki Ohguri

    发明人: Noriaki Ohguri

    IPC分类号: G02B5/18

    CPC分类号: G02B5/1857

    摘要: A phase-shifted diffraction grating for devices such as semiconductor lasers is produced by forming a first diffraction grating pattern of a first material having a reference pitch on a substrate. The substrate is then coated with a second material on both the first material and an exposed portion of the substrate in a region where a second diffraction grating having a pitch which is the reverse of the reference pitch of the first diffraction grating pattern is to be formed. The first material is removed by lift off to obtain the second diffraction grating pattern on the second diffraction grating region. The substrate is etched using the first diffraction grating as an etching mask to form the first diffraction grating and then the substrate is etched with the second diffraction grating pattern as an etching mask to obtain a second diffraction grating continuous with the first diffraction grating. The first diffraction grating pattern may have a rectangular or square shape to stably and accurately remove the first material by lift-off and the boundary between the first and second diffraction gratings can be stably and accurately defined by self-alignment.

    Compound semiconductor device and fabrication method of producing the
compound semiconductor device
    8.
    发明授权

    公开(公告)号:US5701325A

    公开(公告)日:1997-12-23

    申请号:US731682

    申请日:1996-10-16

    摘要: An improved compound semiconductor device, such as a distributed Bragg reflection type or distributed feedback type laser device, having regions with and regions without a diffraction grating. The device is fabricated without exhibiting surface irregularities by growing a first epitaxial layer on a semiconductor substrate, forming a fine uneven structure on the surface of the first epitaxial layer and growing a second epitaxial layer on the fine uneven structure. The fine uneven structure has a surface shape which exposes crystal orientations that facilitate subsequent epitaxial growth. In one embodiment, portions of the fine uneven structure are formed as a diffraction grating while other portions are formed insufficiently uneven to have a diffraction effect for any usable light wavelength. The fine uneven structure may suitably be shallow, have a short pitch or be provided at a slant to the light propagation direction, in order to preclude a diffraction effect.

    摘要翻译: 改进的化合物半导体器件,例如分布式布拉格反射型或分布式反射型激光器件,其具有区域和不具有衍射光栅的区域。 通过在半导体衬底上生长第一外延层,在第一外延层的表面上形成微小的不均匀结构,并在第一外延层上生长第二外延层,制造器件而不会出现表面凹凸。 精细的不均匀结构具有暴露促进随后的外延生长的晶体取向的表面形状。 在一个实施例中,微细凹凸结构的一部分形成为衍射光栅,而其它部分形成得不充分地不均匀以具有任何可用光波长的衍射效应。 为了防止衍射效应,微细凹凸结构可以适当地浅,具有短的间距或者以光传播方向倾斜地设置。

    Displacement detection apparatus
    9.
    发明授权
    Displacement detection apparatus 失效
    位移检测装置

    公开(公告)号:US5523844A

    公开(公告)日:1996-06-04

    申请号:US90315

    申请日:1993-07-13

    IPC分类号: G01B11/00 G01B11/02 G01B11/14

    CPC分类号: G01B11/026

    摘要: An apparatus for detecting a displacement of an object comprises a light source element for emitting a detection light beam, a reflection member for reflecting the detection light beam from the light source element, the detection light beam being irradiated to the object by the reflection by the reflection member, a photo-sensing element for sensing the detection light beam reflected from the object by a photo-sensing plane thereof to detect an incident position of the detection light beam on the photo-sensing plane, displacement information of the object being determined in accordance with the detection by the photo-sensing element, and a substrate having the light source element, the reflection member and the photo-sensing element arranged thereon.

    摘要翻译: 用于检测物体的位移的装置包括用于发射检测光束的光源元件,用于反射来自光源元件的检测光束的反射部件,检测光束通过反射被照射到物体上 反射构件,用于通过其感光面感测从物体反射的检测光束的光敏元件,以检测检测光束在感光平面上的入射位置,该物体的位移信息被确定在 根据光敏元件的检测,以及具有设置在其上的光源元件,反射构件和感光元件的基板。

    Electronic device, electron source and manufacturing method for electronic device
    10.
    发明申请
    Electronic device, electron source and manufacturing method for electronic device 失效
    电子器件,电子源及电子器件的制造方法

    公开(公告)号:US20060186781A1

    公开(公告)日:2006-08-24

    申请号:US11406414

    申请日:2006-04-19

    IPC分类号: B05D5/12 H01J63/04 H01J1/02

    摘要: To provide an antistatic film that requires low power consumption and provides satisfactory electric contact, as a measure for preventing an insulating substrate surface having an electronic device formed thereon from being charged. The electronic device includes: an insulating substrate; a conductor; and a resistance film connected with the conductor, the conductor and the resistance film being formed on the insulating substrate, characterized in that the resistance film has a larger thickness in a connection region with the conductor than a thickness in portions other than the connection region.

    摘要翻译: 为了提供需要低功耗并提供令人满意的电接触的抗静电膜,作为防止其上形成有电子器件的绝缘衬底表面带电的措施。 电子装置包括:绝缘基板; 指挥 以及与所述导体连接的电阻膜,所述导体和所述电阻膜形成在所述绝缘基板上,其特征在于,所述电阻膜在与所述导体的连接区域中的厚度大于所述连接区域以外的部分的厚度。