公开(公告)号：US20090166627A1

公开(公告)日：2009-07-02

申请号：US12344438

申请日：2008-12-26

Applicant: Chang-Hun Han

Inventor： Chang-Hun Han

IPC: H01L31/02 ,  H01L31/0376 ,  H01L21/04

CPC classification number: H01L27/14634 ,  H01L27/14643 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An image sensor may include a first substrate having circuitry including wires and a silicon layer formed on and/or over the first substrate to selectively contact the wires. The image sensor may include photodiodes bonded to the first substrate while contacting the silicon layer and electrically connected to the wires. Each unit pixel may be implemented having complicated circuitry without a reduction in photosensitivity. Additional on-chip circuitry may also be implanted in the design.

Abstract translation: 图像传感器可以包括具有包括导线的电路的第一基板和形成在第一基板上和/或上方的硅层，以选择性地接触导线。 图像传感器可以包括在与硅层接触并且电连接到电线时结合到第一衬底的光电二极管。 可以实现每个单位像素具有复杂的电路而不降低光敏性。 还可以在设计中植入附加的片上电路。

公开(公告)号：US07537999B2

公开(公告)日：2009-05-26

申请号：US10746702

申请日：2003-12-24

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/336

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14643 ,  H01L31/035272

Abstract: A method for manufacturing structures of a CMOS image sensor. The method comprises the steps of depositing a gate insulating layer and a conductive layer on a semiconductor substrate; depositing an ion implantation barrier layer on the conductive layer; patterning the deposited gate insulating layer, conductive layer and ion implantation barrier layer to form a patterned, composite gate insulating layer, gate electrode and ion implantation barrier structure; forming a second photosensitive layer pattern to define a photodiode region; and implanting low-concentration dopant ions into the substrate using the second photosensitive layer pattern as an ion implantation mask to form a low-concentration dopant region within the photodiode region.

Abstract translation: 一种用于制造CMOS图像传感器的结构的方法。 该方法包括以下步骤：在半导体衬底上沉积栅绝缘层和导电层; 在导电层上沉积离子注入阻挡层; 图案化沉积的栅极绝缘层，导电层和离子注入阻挡层，以形成图案化的复合栅极绝缘层，栅电极和离子注入阻挡结构; 形成第二感光层图案以限定光电二极管区域; 以及使用所述第二感光层图案作为离子注入掩模将低浓度掺杂剂离子注入到所述衬底中，以在所述光电二极管区域内形成低浓度掺杂剂区域。

公开(公告)号：US07507635B2

公开(公告)日：2009-03-24

申请号：US11318434

申请日：2005-12-28

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/76

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/1463

Abstract: A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.

Abstract translation: 一种CMOS图像传感器及其制造方法，其中CMOS图像传感器在光电二极管和隔离层之间的边界区域具有最小化的暗电流。 本发明包括在衬底的器件隔离区域中形成的第一导电型掺杂区域，围绕隔离区域的第一导电型掺杂区域和形成在隔离层和第一导电型之间的介电层 掺杂区域，其中所述第一导电型掺杂区域和所述介电层位于所述隔离层和第二导电型扩散区域之间。

公开(公告)号：US07491292B2

公开(公告)日：2009-02-17

申请号：US11327408

申请日：2006-01-09

Applicant: Jung-Hun Han ,  Jin-Jun Park ,  Do-In Bae

Inventor： Jung-Hun Han ,  Jin-Jun Park ,  Do-In Bae

IPC: C23F1/00 ,  H01L21/306

CPC classification number: C23C16/4412

Abstract: An apparatus for catching byproducts in semiconductor device processing equipment is disposed in an exhaust line between a process chamber and a vacuum pump. The apparatus includes a cylindrical trap housing member, an upper cover and a lower cover covering the upper part and lower part of the trap housing, respectively, a heater disposed under the upper cover, first and second cooling plates disposed in the trap housing, a post spacing the cooling plates, apart and a cooling system for cooling respective portions of the apparatus. The cooling system includes a delivery pipe for supplying refrigerant, a discharge pipe for discharging the refrigerant from the apparatus, first cooling piping extending through each cooling plate and connected to the delivery and discharge pipes, and second cooling piping extending helically along the outer circumferential surface of the trap housing.

Abstract translation: 在处理室和真空泵之间的排气管路中设置用于在半导体器件加工设备中捕获副产物的装置。 该装置包括圆柱形捕集器壳体构件，上盖和下盖，分别覆盖捕集器壳体的上部和下部，设置在上盖下方的加热器，设置在捕集器壳体中的第一和第二冷却板， 将间隔开的冷却板间隔开，并且冷却系统用于冷却设备的各个部分。 冷却系统包括用于供应制冷剂的输送管，用于从设备排出制冷剂的排出管，延伸穿过每个冷却板并连接到排出管的第一冷却管道，以及沿着外周表面螺旋地延伸的第二冷却管道 的陷阱外壳。

公开(公告)号：US20080317496A1

公开(公告)日：2008-12-25

申请号：US11945487

申请日：2007-11-27

Applicant: Sin-ae KIM ,  Yong-duk LEE ,  Ho-gun YOU ,  Dong-hun HAN

Inventor： Sin-ae KIM ,  Yong-duk LEE ,  Ho-gun YOU ,  Dong-hun HAN

IPC: G03G15/00

CPC classification number: G03G15/00 ,  G03G21/1609 ,  G03G2215/00016 ,  G03G2215/00455 ,  G03G2221/1681

Abstract: A mobile image forming apparatus is provided that comprises a casing, a support frame to surround a printing medium roll from which a printing medium is supplied and to guide the printing medium, an image forming unit to form an image on the printing medium guided by the support frame and a printing medium receiving portion disposed between the casing and the support frame to receive therein the printing medium on which the image is formed by the image forming unit. The mobile image forming apparatus may further comprise a roll support core disposed in the support frame to rotatably support the printing medium roll.

Abstract translation: 提供一种移动图像形成装置，其包括壳体，用于围绕供应打印介质的打印介质卷的支撑框架并且引导打印介质;图像形成单元，用于在由打印介质引导的打印介质上形成图像 支撑框架和设置在壳体和支撑框架之间的打印介质接收部分，以在其中接收由图像形成单元形成图像的打印介质。 移动图像形成装置还可以包括设置在支撑框架中的辊支撑芯，以可旋转地支撑打印介质辊。

公开(公告)号：US07431520B2

公开(公告)日：2008-10-07

申请号：US11174468

申请日：2005-07-06

Applicant: Myung-Bo Son ,  Yong-duk Lee ,  Dong-hun Han

Inventor： Myung-Bo Son ,  Yong-duk Lee ,  Dong-hun Han

IPC: B41J2/325 ,  B41J3/60 ,  B41J25/304 ,  B41J25/308

CPC classification number: B41J2/325 ,  B41J3/60 ,  B41J13/009 ,  B41J13/14

Abstract: An image forming apparatus is provided and includes a platen roller and a thermal printing head. The thermal printing head is elastically biased toward the platen roller and rotates about a pivot of the platen roller for moving between first and second positions to faces first and second surfaces of a medium. A transfer portion has driving and driven rollers which are rotatably engageable with each other to transfer the media. A guiding unit reduces a difference of media transfer force of the transfer portion when the thermal printing head is respectively located in the first and second positions.

Abstract translation: 提供了一种图像形成装置，包括压印辊和热敏打印头。 热敏打印头朝向压纸辊弹性偏置，并围绕压纸辊的枢轴旋转，以便在第一和第二位置之间移动以面对介质的第一和第二表面。 转印部分具有彼此可旋转地接合以传送介质的驱动辊和从动辊。 当热敏打印头分别位于第一和第二位置时，引导单元减小传送部分的介质传送力的差异。

公开(公告)号：US07411234B2

公开(公告)日：2008-08-12

申请号：US10747307

申请日：2003-12-30

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687

Abstract: A CMOS image sensor and a manufacturing method are disclosed. The gates of the transistors are formed in the active region of the unit pixel, and a diffusion region for the photo diode is defined by an ion implantation of impurities to the semiconductor substrate. The patterns of the photoresist that are the masking layer against ion implantation are formed on the semiconductor substrate in such a manner that they have the boundary portion of the isolation layer so as not to make the boundary of the defined photo diode contact with the boundary of the isolation layer. Damages by an ion implantation of impurities at the boundary portion between the diffusion region for the photo diode and the isolation layer are prevented, which reduces dark current of the COMS image sensor.

Abstract translation: 公开了CMOS图像传感器和制造方法。 晶体管的栅极形成在单位像素的有源区中，并且通过将杂质离子注入半导体衬底来限定用于光电二极管的扩散区。 作为抵抗离子注入的掩模层的光致抗蚀剂的图案以这样的方式形成在半导体衬底上，使得它们具有隔离层的边界部分，以便不使所定义的光电二极管的边界与 隔离层。 通过在光电二极管的扩散区域与隔离层之间的边界部分处的杂质的离子注入的损害被防止，这降低了COMS图像传感器的暗电流。

公开(公告)号：US20080103007A1

公开(公告)日：2008-05-01

申请号：US11718683

申请日：2005-11-07

Applicant: Gi Hyok Han ,  Gi Hun Han ,  Sung Chol Lim

Inventor： Gi Hyok Han ,  Gi Hun Han ,  Sung Chol Lim

IPC: F16H57/08

CPC classification number: F16H33/10 ,  Y10T74/1218

Abstract: An automatic transmission consisting of a planetary gear unit comprising in combination an input shaft (1), an input gear (2), a key planet gear (3), an output gear (4), an output shaft (5), a bearing planet gear (6), a rotating frame (7), a rotor (8), wherein the planet shaft is the rotor (8) having a certain inertia moment, so its revolving is equivalent to the precession of a gyroscope due to an external force wherein the precession-production external force is the load acting on the output shaft (5). Hence the revolutionary speed of the rotor (8) varies depending upon changes in the output load and the same holds true for the rotational speed of the output shaft (5), which makes the speed ratio spontaneously vary with changes in the outpot load. Accordingly, the transmission of the present invention operates at speed ratios spontaneously varying with changes in load, without any controlling operation.

Abstract translation: 一种由行星齿轮单元组成的自动变速器，其包括输入轴（1），输入齿轮（2），关键行星齿轮（3），输出齿轮（4），输出轴（5），轴承 行星齿轮（6），旋转框架（7），转子（8），其中行星轴是具有一定惯性矩的转子（8），因此其旋转等于由于外部的陀螺仪的旋进 力，其中进动产生外力是作用在输出轴（5）上的载荷。 因此，转子（8）的革命性速度根据输出负载的变化而变化，并且对于输出轴（5）的转速也是如此，这使得速度比随着排气负荷的变化而自发变化。 因此，本发明的变速器以不受任何控制操作而随负载变化而自发变化的速度比工作。

公开(公告)号：US07354789B2

公开(公告)日：2008-04-08

申请号：US10982643

申请日：2004-11-04

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14603 ,  H01L27/1463 ,  H01L27/14689

Abstract: CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein, a device isolating film in the semiconductor substrate of the device isolation region, a first conductive type impurity region in the semiconductor substrate of the photodiode region, the first conductive type impurity region being spaced a distance from the device isolation film, and a second conductive type first impurity region in the semiconductor substrate between the first conductive type impurity region and the device isolation film, thereby reducing generation of a darkcurrent at an interface between the photodiode region and a field region.

Abstract translation: CMOS图像传感器及其制造方法，CMOS图像传感器包括具有限定在其中的有源区和器件隔离区的第二导电型半导体衬底，其中有源区具有限定在其中的光电二极管区和晶体管区， 在器件隔离区域的半导体衬底中的隔离膜，在光电二极管区域的半导体衬底中的第一导电类型杂质区域，与器件隔离膜间隔一定距离的第一导电类型杂质区域和第二导电类型第一杂质 在第一导电型杂质区域和器件隔离膜之间的半导体衬底中的区域，从而减少在光电二极管区域和场区域之间的界面处的产生暗电流。

公开(公告)号：US07241671B2

公开(公告)日：2007-07-10

申请号：US11319067

申请日：2005-12-28

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/38 ,  H01L21/76

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14687 ,  H01L27/14689

Abstract: A CMOS image sensor includes a first conductive type semiconductor substrate having an active region and a device isolation region, a device isolation film formed in the device isolation region of the semiconductor substrate, a second conductive type diffusion region formed in the active region of the semiconductor substrate, and an ion implantation prevention layer formed in the vicinity of the device isolation film, including a boundary portion between the device isolation film and the second conductive type diffusion region.

Abstract translation: CMOS图像传感器包括具有有源区和器件隔离区的第一导电类型半导体衬底，形成在半导体衬底的器件隔离区中的器件隔离膜，形成在半导体的有源区中的第二导电型扩散区 衬底和形成在器件隔离膜附近的离子注入防止层，包括器件隔离膜和第二导电类型扩散区之间的边界部分。