Abstract:
A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack. The TFT stack includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes removing the first photoresist layer, and depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area. The method further includes doping the second portion of the doped semiconductor layer with a third doping dose, the first dose being higher than the second dose and the third dose.
Abstract:
A touch screen display may include gate line driver circuitry coupled to a display pixel array. The display may be provided with intra-frame pausing (IFP) capabilities, where touch or other operations may be performed during one or more intra-frame blanking intervals. In one suitable arrangement, a gate driver circuit may include multiple gate line driver segments each of which is activated by a separate gate start pulse. Each gate start pulse may only be released at the end of an IFP interval. In another suitable arrangement, dummy gate driver units may be interposed among active gate driver units. Gate output signals may propagate through the dummy gate driver units during the IFP internal. In another suitable arrangement, each active gate driver unit may be provided with a buffer portion that protects at least some transistor in the gate driver unit from undesired stress.
Abstract:
An organic light-emitting diode display may have an array of pixels. Each pixel may have an organic light-emitting diode with an anode and cathode. The anodes may be formed from a patterned layer of metal. Thin-film transistor circuitry in the pixels may include transistors such as drive transistors and switching transistors. Data lines may supply data signals to the pixels and horizontal control lines may supply control signals to the gates of the transistors. A switching transistor may be coupled between a voltage initialization line and each anode. The voltage initialization lines and capacitor structures in the thin-film transistor circuitry may be formed using a layer of metal that is different than the layer of metal that forms the anodes.
Abstract:
An organic light-emitting diode display may have an array of pixel circuits. Each pixel circuit may contain an organic light-emitting diode that emits light, a drive transistor that controls current flow through the diode, and additional transistors such as switching transistors for loading data into the pixel circuit and emission transistors for enabling and disabling current flow through the drive transistor and diode. Gate driver circuitry may produce emission control signals that control the emission transistors. Display driver circuitry may generate a start signal with a digitally controlled pulse width. The start signal may be applied to shift register circuitry in the gate driver circuitry. The pulse width of the start signal may be adjusted to adjust the luminance of the display.
Abstract:
A display may have an array of pixels arranged in rows and columns. Each pixel may have a transistor for controlling the amount of output light associated with that pixel. The transistors may be thin-film transistors having active areas, first and second source-drain terminals, and gates. Gate lines may be used to distribute gate control signals to the gates of the transistors in each row. Data lines that run perpendicular to the gate lines may be used to distribute image data along columns of pixels. The gate lines may be connected to gate line extensions that run parallel to the data lines. The data lines may each overlap a respective one of the gate line extensions. Vias may be used to connect the gate line extensions to the gate lines. The gate line extensions may all have the same length.
Abstract:
Devices and methods for increasing the aperture ratio and providing more precise gray level control to pixels in an active matrix organic light emitting diode (AMOLED) display are provided. By way of example, one embodiment includes disposing a gate insulator between a gate of a driving thin-film transistor and a gate of a circuit thin-film transistor. The improved structure of the display facilitates a higher voltage range for controlling the gray level of the pixels, and may increase the aperture ratio of the pixels.
Abstract:
A display may have an array of pixels. Each pixel may have a light-emitting diode that emits light under control of a drive transistor. The organic light-emitting diodes may have a common cathode layer, a common electron layer, individual red, green, and blue emissive layers, a common hole layer, and individual anodes. The hole layer may have a hole injection layer stacked with a hole transport layer. Pixel circuits for controlling the diodes may be formed from a layer of thin-film transistor circuitry on a substrate. A planarization layer may cover the thin-film transistor layer. Lateral leakage current between adjacent diodes can be blocked by shorting the common hole layer to a metal line such as a bias electrode that is separate from the anodes. The metal line may be laterally interposed between adjacent pixels and may be formed on the planarization layer or embedded within the planarization layer.
Abstract:
An electronic device may have a flexible display with portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area. Contact pads may be formed in an inactive area of the display. Signal lines may couple the display pixels to the contact pads. The signal lines may overlap the bend axis in the inactive area of the display. During fabrication, an etch stop may be formed on the display that overlaps the bend axis. The etch stop may prevent over etching of dielectric such as a buffer layer on a polymer flexible display substrate. A layer of polymer that serves as a neutral stress plane adjustment layer may be formed over the signal lines in the inactive area of the display. Upon bending, the neutral stress plane adjustment layer helps prevent stress in the signal lines.
Abstract:
A touch screen including display pixels with capacitive elements is provided. The touch screen includes first common voltage lines connecting capacitive elements in adjacent display pixels, and a second common voltage line connecting first common voltage lines. Groups of pixels can be formed as electrically separated regions by including breaks in the common voltage lines. The regions can include a drive region that is stimulated by stimulation signals, a sense region that receives sense signals corresponding to the stimulation signals. A grounded region can also be included, for example, between a sense region and a drive region. A shield layer can be formed of a substantially high resistance material and disposed to shield a sense region. A black mask line and conductive line under the black mask line can be included, for example, to provide low-resistance paths between a region of pixels and touch circuitry outside the touch screen borders.
Abstract:
A display may have a thin-film transistor (TFT) layer and a color filter layer. The TFT layer may have a first substrate, a first black masking layer, a planarization layer, and a layer of TFT circuitry on the planarization layer. The color filter layer may have a second substrate and a second black masking layer on the second substrate. A portion of the inactive area may serve as a logo area for displaying desired information to the user. A reflective structure may be formed on the bottom surface of the planarization layer, on the bottom surface of the first substrate, on the bottom surface of the second substrate, or on the upper surface of the first substrate in the logo area. In another embodiment, the logo area may be backlit by transmitting light through one or more openings in the first and second black masking layers in the logo area.