Abstract:
A low inductance multi-layer capacitor. The capacitor comprises interleaved parallel internal electrode plates with dielectric there between. Each internal electrode plate comprises two lead-out tabs and is generally T shaped. A first external electrode terminal is electrically connected to the lead-out tabs of the even internal electrode plates, and a second external electrode terminal is electrically connected to the lead-out tabs of the odd internal electrode plates. The external electrode terminals are on a common first exterior surface and a common opposing second exterior surface of the capacitor.
Abstract:
A dielectric ceramic composition in a multilayer ceramic capacitor having a composition of formula: ((CaO)t(SrO)1-t(ZrO2)v(TiO2)1-s-x-y-zAsExGyHz wherein: A is a transition metal oxide; E is an oxide of a group III or IV element; G is an oxide of a group II element; H is an oxide of a lanthanide; t is 0.50 to 0.90; v is 0.8 to 1.0; s is 0.0001 to 0.08; x is 0 to 0.08; y is 0 to 0.20; and z is 0 to 0.20.
Abstract:
A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0≦x≦0.08, 0.0001≦s≦0.043 and x≧1.86s; and b) 0≦x≦0.0533, 0.0001≦s≦0.08 and x≦0.667s.
Abstract:
A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0≦x≦0.08, 0.0001≦s≦0.043 and x≧1.86s; and b) 0≦x≦0.0533, 0.0001≦s≦0.08 and x≦0.667s.
Abstract:
A dielectric ceramic composition in a multilayer ceramic capacitor with a composition of formula: {[(CaO)t(SrO)1-t]m[(ZrO2)v(TiO2)1-v]}1-s-xAsEx wherein: A is a transition metal oxide; E is an oxide of an element selected from the group consisting of Ge, Si, Ga and combinations thereof; m is 0.98 to 1.02; t is 0.50 to 0.90; v is 0.8 to 1.0; s and x are selected from the group consisting of: a) 0≦x≦0.08, 0.0001≦s≦0.043 and x≧1.86s; and b) 0≦x≦0.0533, 0.0001≦s≦0.08 and x≦0.667s.
Abstract translation:一种具有下列组成的多层陶瓷电容器中的介电陶瓷组合物:<?in-line-formula description =“In-line Formulas”end =“lead”?> {[(CaO)t(SrO)1-t] m [(ZrO 2)v(TiO 2)1-v]} 1-s-x AsEx <?in-line-formula description =“In-line Formulas”end =“tail”?>其中:A是过渡金属氧化物; E是选自Ge,Si,Ga及其组合的元素的氧化物; m为0.98〜1.02; t为0.50〜0.90; v为0.8〜1.0; s和x选自:a)0 <= x <= 0.08,0 0.0001 <= s <= 0.043和x> = 1.86s; 和b)0 <= x <= 0.0533,0.0001 <= s <= 0.08和x <= 0.667s。
Abstract:
A process for forming a multilayer ceramic device. The device includes forming a ceramic precursor layer followed by ink jet printing in alternating order an electrode precursor in a predetermined pattern on the ceramic precursor layer to form an electrode and a ceramic ink on the electrode. The ceramic precursor is then sintered.
Abstract:
A dielectric ceramic composition in a multilayer ceramic capacitor having a composition of formula: ((CaO)t(SrO)1-t(ZrO2)v(TiO2)1-v)1-s-x-y-zAsExGyHzwherein: A is a transition metal oxide; E is an oxide of a group III or IV element; G is an oxide of a group II element; H is an oxide of a lanthanide; t is 0.50 to 0.90; v is 0.8 to 1.0; s is 0.0001 to 0.08; x is 0 to 0.08; y is 0 to 0.20; and z is 0 to 0.20.
Abstract:
A method for forming a capacitor and capacitor formed thereby. The method comprises a) forming a capacitor precursor with green ceramic layers separated by conductive precursor layers wherein the conductive precursor layers have 30-80 wt % nickel precursor; up to 20 wt % grain growth inhibitor and 20-70 wt % organic vehicle; and b) heating the capacitor precursor to convert the green ceramic layers to ceramic dielectric layers and the conductive precursor layers to conductive layers.
Abstract:
A method for forming a capacitor and capacitor formed thereby. The method comprises a) forming a capacitor precursor with green ceramic layers separated by conductive precursor layers wherein the conductive precursor layers have 30-80 wt % nickel precursor; up to 20 wt % grain growth inhibitor and 20-70 wt % organic vehicle; and b) heating the capacitor precursor to convert the green ceramic layers to ceramic dielectric layers and the conductive precursor layers to conductive layers.