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公开(公告)号：US10029914B2
公开(公告)日：2018-07-24
申请号：US14916884
申请日：2015-04-23
Applicant: CAVENDISH KINETICS, INC.
Inventor： James Douglas Huffman , Cong Quoc Khieu , Robertus Petrus Van Kampen , Karl F. Smayling , Vikram Joshi
IPC: H01L29/93 , B81C99/00 , H01G5/16 , H01L23/522 , G01R27/26
Abstract: The present invention generally relates to a mechanism for testing a MEMS hysteresis. A power management circuit may be coupled to the electrodes that cause the movable plate that is disposed between the electrodes in a MEMS device to move. The power management circuit may utilize a charge pump, a comparator and a resistor ladder.
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公开(公告)号：US09948212B2
公开(公告)日：2018-04-17
申请号：US14889118
申请日：2014-05-16
Applicant: CAVENDISH KINETICS, INC.
Inventor： Cong Quoc Khieu , James Douglas Huffman , Richard L. Knipe , Vikram Joshi , Robertus Petrus Van Kampen
CPC classification number: H02N1/006 , B81B7/008 , B81B7/02 , B81B2201/0221 , H01G5/011 , H01G5/18 , H01H59/0009 , H03J2200/39
Abstract: The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.
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公开(公告)号：US09908774B2
公开(公告)日：2018-03-06
申请号：US15024942
申请日：2014-09-15
Applicant: CAVENDISH KINETICS, INC.
Inventor： Mickael Renault
IPC: B81C1/00
CPC classification number: B81C1/0038 , B81C1/00801 , B81C2201/0108 , B81C2201/0176 , B81C2201/053
Abstract: The present invention generally relates to a method for forming a MEMS device and a MEMS device formed by the method. When forming the MEMS device, sacrificial material is deposited around the switching element within the cavity body. The sacrificial material is eventually removed to free the switching element in the cavity. The switching element has a thin dielectric layer thereover to prevent etchant interaction with the conductive material of the switching element. During fabrication, the dielectric layer is deposited over the sacrificial material. To ensure good adhesion between the dielectric layer and the sacrificial material, a silicon rich silicon oxide layer is deposited onto the sacrificial material before depositing the dielectric layer thereon.
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公开(公告)号：US20180033553A1
公开(公告)日：2018-02-01
申请号：US15548992
申请日：2016-01-28
Applicant: CAVENDISH KINETICS, INC.
Inventor： Robertus Petrus VAN KAMPEN , Roberto GADDI , Richard L. KNIPE
CPC classification number: H01G4/005 , B81B2201/016 , H01H1/0036 , H01H59/0009 , H01H2001/0057 , H01H2001/0084
Abstract: The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.
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公开(公告)号：US20170287646A1
公开(公告)日：2017-10-05
申请号：US15629161
申请日：2017-06-21
Applicant: CAVENDISH KINETICS, INC.
Inventor： Robertus Petrus VAN KAMPEN , Ramadan A. ALHALABI
CPC classification number: H01G5/011 , H01G5/013 , H01G5/16 , H01G5/18 , H01H59/0009
Abstract: The present invention generally relates to a MEMS DVC having a shielding electrode structure between the RF electrode and one or more other electrodes that cause a plate to move. The shielding electrode structure may be grounded and, in essence, block or shield the RF electrode from the one or more electrodes that cause the plate to move. By shielding the RF electrode, coupling of the RF electrode to the one or more electrodes that cause the plate to move is reduced and capacitance modulation is reduced or even eliminated.
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Patent Agency Ranking
公开(公告)号：US09711289B2
公开(公告)日：2017-07-18
申请号：US14779564
申请日：2014-04-02
Applicant: CAVENDISH KINETICS, INC.
Inventor： Robertus Petrus Van Kampen , Ramadan A. Alhalabi
CPC classification number: H01G5/011 , H01G5/013 , H01G5/16 , H01G5/18 , H01H59/0009
Abstract: The present invention generally relates to a MEMS DVC having a shielding electrode structure between the RF electrode and one or more other electrodes that cause a plate to move. The shielding electrode structure may be grounded and, in essence, block or shield the RF electrode from the one or more electrodes that cause the plate to move. By shielding the RF electrode, coupling of the RF electrode to the one or more electrodes that cause the plate to move is reduced and capacitance modulation is reduced or even eliminated.
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公开(公告)号：US09385594B2
公开(公告)日：2016-07-05
申请号：US14783281
申请日：2014-04-02
Applicant: CAVENDISH KINETICS, INC.
CPC classification number: H02M3/07 , B81B7/00 , B81B7/008 , B81B2201/014 , B81B2203/0109
Abstract: The present invention generally relates to a DVC having a charge-pump coupled to a MEMS device. The charge-pump is designed to control the output voltage delivered to the electrodes, such as the pull-in electrode or the pull-off electrode, that move the switching element within the MEMS device between locations spaced far from and disposed closely to the RF electrode.
Abstract translation: 本发明一般涉及具有耦合到MEMS器件的电荷泵的DVC。 电荷泵被设计成控制传递到电极的输出电压，例如拉入电极或拉出电极，其将MEMS器件内的开关元件移动到与RF紧密相邻的位置处 电极。
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28.发明申请公开(公告)号：US20160134016A1
公开(公告)日：2016-05-12
申请号：US14899040
申请日：2014-06-26
Applicant: CAVENDISH KINETICS, INC.
Inventor： Chih-Hao Hsu , Paul Anthony Tornatta , Roberto Gaddi
Abstract: The present invention generally relates to cellular phones having multiple antennas. The invention relates to how two antennas in a diversity or MIMO antenna system interact through mutual coupling. The mutual coupling is due to proximity of the two antennas, their antenna pattern and efficiency. The performance of the system can be optimized by adjusting the mutual coupling between the antennas. The primary and secondary antennas can be “tuned” and “de-tuned” respectively to enhance system performance. In this invention, the primary and secondary antennas are tuned independently using MEMS capacitor configured in the antenna aperture for frequency tuning.
Abstract translation: 本发明一般涉及具有多个天线的蜂窝电话。 本发明涉及分集或MIMO天线系统中的两个天线如何通过互耦合相互作用。 相互耦合是由于两个天线的接近，它们的天线方向图和效率。 可以通过调整天线之间的相互耦合来优化系统的性能。 主和辅助天线可以分别“调谐”和“解调”，以增强系统性能。 在本发明中，主天线和次天线被独立地使用配置在天线孔径中的MEMS电容器进行频率调谐。
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29.发明申请STRESS CONTROL DURING PROCESSING OF A MEMS DIGITAL VARIABLE CAPACITOR (DVC) 有权MEMS数字可变电容器（DVC）处理过程中的应力控制公开(公告)号：US20160126017A1
公开(公告)日：2016-05-05
申请号：US14898678
申请日：2014-06-04
Applicant: CAVENDISH KINETICS, INC.
Inventor： Robertus Petrus VAN KAMPEN , Richard L. KNIPE
Abstract: The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.
Abstract translation: 本发明一般涉及一种MEMS数字可变电容器（DVC）（900）及其制造方法。 MEMS DVC内的可移动板（938）应具有相同的应力水平，以确保MEMS DVC的正常工作。 为了获得相同的应力水平，在制造过程中可移动板与CMOS接地分离。 在板已经完全形成之后，可移动板仅电连接到CMOS接地。 通过使用形成上拉电极的相同层（948）作为将可移动板电耦合到CMOS地的层而发生耦合。 由于相同的层将可移动板耦合到CMOS地，并且还为MEMS DVC提供上拉电极，所以沉积在相同的处理步骤中发生。 通过在形成后将可动板电耦合到CMOS地，可移动板的每个层中的应力可以是基本相同的。
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30.发明申请METHOD AND TECHNIQUE TO CONTROL MEMS DVC CONTROL WAVEFORM FOR LIFETIME ENHANCEMENT 有权控制MEMS DVC控制波形的方法和技术，用于生命增强公开(公告)号：US20160072408A1
公开(公告)日：2016-03-10
申请号：US14889118
申请日：2014-05-16
Applicant: CAVENDISH KINETICS, INC
Inventor： Cong Quoc KHIEU , James Douglas HUFFMAN , Richard L. KNIPE , Vikram JOSHI , Robertus Petrus VAN KAMPEN
CPC classification number: H02N1/006 , B81B7/008 , B81B7/02 , B81B2201/0221 , H01G5/011 , H01G5/18 , H01H59/0009 , H03J2200/39
Abstract: The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.
Abstract translation: 本发明一般涉及一种操作MEMS DVC的方法，同时最小化MEMS器件对接触表面的影响。 通过在MEMS器件的拉入运动时降低驱动电压，MEMS器件朝向接触表面的加速度减小，因此冲击速度降低，并且MEMS DVC器件的损坏较小。
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