公开(公告)号：US08501610B2

公开(公告)日：2013-08-06

申请号：US12714194

申请日：2010-02-26

Applicant: Chih-Wei Lin ,  Yi-Fang Lee ,  Cheng-Ta Wu ,  Cheng-Yuan Tsai

Inventor： Chih-Wei Lin ,  Yi-Fang Lee ,  Cheng-Ta Wu ,  Cheng-Yuan Tsai

IPC: H01L21/3205

CPC classification number: H01L29/788 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881

Abstract: Non-volatile memories and methods of fabrication thereof are described. In one embodiment, a method of fabricating a semiconductor device includes forming an oxide layer over a semiconductor substrate, and exposing the oxide layer to a first nitridation step to form a first nitrogen rich region. The first nitrogen rich region is disposed adjacent an interface between the oxide layer and the semiconductor substrate. After the first nitridation step, the oxide layer is exposed to a second nitridation step to form a second nitrogen rich region. A first gate electrode is formed on the oxide layer, wherein the second nitrogen rich region is disposed adjacent an interface between the oxide layer and the first gate electrode.

Abstract translation: 描述了非易失性存储器及其制造方法。 在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成氧化物层，并将氧化物层暴露于第一氮化步骤以形成第一富氮区域。 第一富氮区域设置在氧化物层和半导体衬底之间的界面附近。 在第一次氮化步骤之后，将氧化物层暴露于第二氮化步骤以形成第二富氮区域。 第一栅电极形成在氧化物层上，其中第二富氮区邻近氧化物层和第一栅电极之间的界面设置。

公开(公告)号：US20130040446A1

公开(公告)日：2013-02-14

申请号：US13205179

申请日：2011-08-08

Applicant: Chih-Yu Lai ,  Cheng-Ta Wu ,  Kai-Chun Hsu ,  Yeur-Luen Tu ,  Ching-Chun Wang ,  Chia-Shiung Tsai

Inventor： Chih-Yu Lai ,  Cheng-Ta Wu ,  Kai-Chun Hsu ,  Yeur-Luen Tu ,  Ching-Chun Wang ,  Chia-Shiung Tsai

IPC: H01L21/265

CPC classification number: H01L27/14687 ,  H01L27/1464

Abstract: A method includes performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface. A treatment is then performed on the back surface using a method selected from the group consisting essentially of a dry treatment and a plasma treatment. Process gases that are used in the treatment include oxygen (O2). The plasma treatment is performed without vertical bias in a direction perpendicular to the back surface.

Abstract translation: 一种方法包括对半导体衬底的背面进行研磨，其中半导体衬底的剩余部分具有背面。 然后使用基本上由干法处理和等离子体处理组成的组中的方法在背面进行处理。 用于处理的工艺气体包括氧（O 2）。 在垂直于后表面的方向上进行等离子体处理而没有垂直偏压。

公开(公告)号：US20120028473A1

公开(公告)日：2012-02-02

申请号：US13253694

申请日：2011-10-05

Applicant: Chih-Yu Lai ,  Cheng-Ta Wu ,  Neng-Kuo Chen ,  Cheng-Yuan Tsai

Inventor： Chih-Yu Lai ,  Cheng-Ta Wu ,  Neng-Kuo Chen ,  Cheng-Yuan Tsai

IPC: H01L21/302

CPC classification number: H01L21/0337

Abstract: A method of forming an integrated circuit structure includes providing a substrate; forming a first hard mask layer over the substrate; forming a second hard mask layer over the first hard mask layer; patterning the second hard mask layer to form a hard mask; and, after the step of patterning the second hard mask layer, baking the substrate, the first hard mask layer, and the hard mask. After the step of baking, a spacer layer is formed, which includes a first portion on a top of the hard mask, and a second portion and a third portion on opposite sidewalls of the hard mask. The method further includes removing the first portion of the spacer layer; removing the hard mask; and using the second portion and the third portion of the spacer layer as masks to pattern the first hard mask layer.

Abstract translation: 形成集成电路结构的方法包括提供基板; 在衬底上形成第一硬掩模层; 在所述第一硬掩模层上形成第二硬掩模层; 图案化第二硬掩模层以形成硬掩模; 并且在图案化第二硬掩模层的步骤之后，烘烤基板，第一硬掩模层和硬掩模。 在烘烤步骤之后，形成间隔层，其包括在硬掩模的顶部上的第一部分和硬掩模的相对侧壁上的第二部分和第三部分。 该方法还包括去除间隔层的第一部分; 去除硬面膜; 并且使用间隔层的第二部分和第三部分作为掩模来对第一硬掩模层进行图案化。

公开(公告)号：US20100270604A1

公开(公告)日：2010-10-28

申请号：US12714194

申请日：2010-02-26

Applicant: Chih-Wei Lin ,  Yi-Fang Lee ,  Cheng-Ta Wu ,  Cheng-Yuan Tsai

Inventor： Chih-Wei Lin ,  Yi-Fang Lee ,  Cheng-Ta Wu ,  Cheng-Yuan Tsai

IPC: H01L29/788 ,  H01L21/336

CPC classification number: H01L29/788 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/513 ,  H01L29/7881

Abstract: Non-volatile memories and methods of fabrication thereof are described. In one embodiment, a method of fabricating a semiconductor device includes forming an oxide layer over a semiconductor substrate, and exposing the oxide layer to a first nitridation step to form a first nitrogen rich region. The first nitrogen rich region is disposed adjacent an interface between the oxide layer and the semiconductor substrate. After the first nitridation step, the oxide layer is exposed to a second nitridation step to form a second nitrogen rich region. A first gate electrode is formed on the oxide layer, wherein the second nitrogen rich region is disposed adjacent an interface between the oxide layer and the first gate electrode.

Abstract translation: 描述了非易失性存储器及其制造方法。 在一个实施例中，制造半导体器件的方法包括在半导体衬底上形成氧化物层，并将氧化物层暴露于第一氮化步骤以形成第一富氮区域。 第一富氮区域设置在氧化物层和半导体衬底之间的界面附近。 在第一次氮化步骤之后，将氧化物层暴露于第二氮化步骤以形成第二富氮区域。 第一栅电极形成在氧化物层上，其中第二富氮区邻近氧化物层和第一栅电极之间的界面设置。