公开(公告)号：USD564857S1

公开(公告)日：2008-03-25

申请号：US29286156

申请日：2007-04-25

Applicant: Chia Ying Lee

Designer： Chia Ying Lee

公开(公告)号：US08850369B2

公开(公告)日：2014-09-30

申请号：US13451605

申请日：2012-04-20

Applicant: Yuan-Hsiang Lung ,  Kuei-Shun Chen ,  Meng-Wei Chen ,  Chia-Ying Lee

Inventor： Yuan-Hsiang Lung ,  Kuei-Shun Chen ,  Meng-Wei Chen ,  Chia-Ying Lee

IPC: G06F17/50

CPC classification number: H01L21/31144 ,  G03F1/70 ,  H01L21/76816

Abstract: A method for optimizing masks used for forming conductive features and a method for creating the mask features on an IC device are disclosed. An exemplary embodiment includes receiving a design database including a plurality of conductive features. First and second features suitable for joining are identified from the plurality of conductive features. A joined feature corresponding to the first and the second features is characterized. A cut shape configured to separate the first and second features from the joined feature is also characterized. The joined feature is categorized into a first conductive mask, the cut shape is categorized into a cut mask, and a third feature is categorized into a second conductive mask. The categorized shapes and features of the first conductive mask, the second conductive mask, and the cut mask are provided for manufacturing a mask set corresponding to the categorized shapes and features.

Abstract translation: 公开了一种用于优化用于形成导电特征的掩模的方法和用于在IC器件上产生掩模特征的方法。 示例性实施例包括接收包括多个导电特征的设计数据库。 从多个导电特征中识别适合于接合的第一和第二特征。 表征与第一和第二特征对应的连接特征。 被配置为将第一和第二特征与接合的特征分离的切割形状也被表征。 连接的特征被分类为第一导电掩模，切割形状被分为切割掩模，第三特征被分类为第二导电掩模。 提供第一导电掩模，第二导电掩模和切割掩模的分类形状和特征，用于制造对应于分类形状和特征的掩模组。

公开(公告)号：US08697537B2

公开(公告)日：2014-04-15

申请号：US13364119

申请日：2012-02-01

Applicant: Chia Ying Lee ,  Chih-Yuan Ting ,  Jyu-Horng Shieh

Inventor： Chia Ying Lee ,  Chih-Yuan Ting ,  Jyu-Horng Shieh

IPC: H01L21/76

CPC classification number: H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76224 ,  H01L21/76816

Abstract: A method that includes forming a masking element on a semiconductor substrate and overlying a defined space. A first feature and a second feature are each formed on the semiconductor substrate. The space interposes the first and second features and extends from a first end of the first feature to a first end of the second feature. A third feature is then formed adjacent and substantially parallel the first and second features. The third feature extends at least from the first end of the first feature to the first end of the second feature.

Abstract translation: 一种方法，其包括在半导体衬底上形成掩模元件并覆盖在限定的空间上。 第一特征和第二特征各自形成在半导体衬底上。 该空间插入第一和第二特征并且从第一特征的第一端延伸到第二特征的第一端。 然后，第三特征与第一和第二特征相邻并基本上平行。 第三特征至少从第一特征的第一端延伸到第二特征的第一端。

公开(公告)号：US20130157462A1

公开(公告)日：2013-06-20

申请号：US13328680

申请日：2011-12-16

Applicant: Chia Ying Lee ,  Chih-Yuan Ting ,  Jyu-Horng Shieh ,  Minghsing Tsai ,  Syun-Ming Jang

Inventor： Chia Ying Lee ,  Chih-Yuan Ting ,  Jyu-Horng Shieh ,  Minghsing Tsai ,  Syun-Ming Jang

IPC: H01L21/28 ,  H01L21/302

CPC classification number: H01L21/3086 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32

Abstract: The present disclosure provides a method including providing a semiconductor substrate and forming a first layer and a second layer on the semiconductor substrate. The first layer is patterned to provide a first element, a second element, and a space interposing the first and second elements. Spacer elements are then formed on the sidewalls on the first and second elements of the first layer. Subsequently, the second layer is etched using the spacer elements and the first and second elements as a masking element.

公开(公告)号：US08461347B2

公开(公告)日：2013-06-11

申请号：US13204118

申请日：2011-08-05

Applicant: Ai-Hua Kao ,  Chia-Ying Lee

Inventor： Ai-Hua Kao ,  Chia-Ying Lee

IPC: C07D213/06

CPC classification number: C07D213/42

Abstract: A process of making Form A of atazanavir sulfate comprises: a) mixing atazanavir free base with a solvent selected from the group consisting of methanol (MeOH), ethanol (EtOH), isopropanol (IPA), N-methylprrolidone (NMP) and combinations thereof; b) reacting sulfuric acid with the atazanavir free base in the mixture formed in step a) to form a reaction solution comprising atazanavir sulfate; c) mixing an antisolvent with the reaction solution; d) seeding the mixture formed in step c) with an effective amount of Form A of atazanavir sulfate to form a seeded mixture comprising Form A of atazanavir sulfate; and e) isolating Form A of atazanavir sulfate in solid form from the seeded mixture; wherein the antisolvent is selected from the group consisting of methyl tert-butyl ether (MTBE), ethyl acetate (EtOAc), acetonitrile (MeCN), isopropyl acetate (IPAc), cyclohexane, and combinations thereof. In one alternative, step c) may be performed before step b). In another alternative, step d) may be carried out concurrent with or prior to step c).

Abstract translation: 制备硫酸阿扎那韦形式A的方法包括：a）将阿扎那韦游离碱与选自甲醇（MeOH），乙醇（EtOH），异丙醇（IPA），N-甲基吡咯烷酮（NMP）及其组合的溶剂混合） ; b）在步骤a）中形成的混合物中使硫酸与阿扎那韦游离碱反应形成包含阿扎那韦硫酸盐的反应溶液; c）将反溶剂与反应溶液混合; d）将步骤c）中形成的混合物与有效量的A型阿扎那韦硫酸盐接种以形成包含阿扎那韦硫酸盐形式A的接种混合物; 和e）从接种的混合物中分离出固体形式的硫酸阿扎那韦的形式A; 其中所述反溶剂选自甲基叔丁基醚（MTBE），乙酸乙酯（EtOAc），乙腈（MeCN），乙酸异丙酯（IPAc），环己烷及其组合。 在一个替代方案中，步骤c）可以在步骤b）之前执行。 在另一替代方案中，步骤d）可以与步骤c）同时或之前进行。

公开(公告)号：US20130035493A1

公开(公告)日：2013-02-07

申请号：US13204118

申请日：2011-08-05

Applicant: Ai-Hua KAO ,  Chia-Ying Lee

Inventor： Ai-Hua KAO ,  Chia-Ying Lee

IPC: C07D213/42

CPC classification number: C07D213/42

Abstract: A process of making Form A of atazanavir sulfate comprises: a) mixing atazanavir free base with a solvent selected from the group consisting of methanol (MeOH), ethanol (EtOH), isopropanol (IPA), N-methylprrolidone (NMP) and combinations thereof; b) reacting sulfuric acid with the atazanavir free base in the mixture formed in step a) to form a reaction solution comprising atazanavir sulfate; c) mixing an antisolvent with the reaction solution; d) seeding the mixture formed in step c) with an effective amount of Form A of atazanavir sulfate to form a seeded mixture comprising Form A of atazanavir sulfate; and e) isolating Form A of atazanavir sulfate in solid form from the seeded mixture; wherein the antisolvent is selected from the group consisting of methyl tert-butyl ether (MTBE), ethyl acetate (EtOAc), acetonitrile (MeCN), isopropyl acetate (IPAc), cyclohexane, and combinations thereof. In one alternative, step c) may be performed before step b). In another alternative, step d) may be carried out concurrent with or prior to step c).

Abstract translation: 制备硫酸阿扎那韦形式A的方法包括：a）将阿扎那韦游离碱与选自甲醇（MeOH），乙醇（EtOH），异丙醇（IPA），N-甲基吡咯烷酮（NMP）及其组合的溶剂混合） ; b）在步骤a）中形成的混合物中使硫酸与阿扎那韦游离碱反应形成包含阿扎那韦硫酸盐的反应溶液; c）将反溶剂与反应溶液混合; d）将步骤c）中形成的混合物与有效量的A型阿扎那韦硫酸盐接种以形成包含阿扎那韦硫酸盐形式A的接种混合物; 和e）从接种的混合物中分离出固体形式的硫酸阿扎那韦的形式A; 其中所述反溶剂选自甲基叔丁基醚（MTBE），乙酸乙酯（EtOAc），乙腈（MeCN），乙酸异丙酯（IPAc），环己烷及其组合。 在一个替代方案中，步骤c）可以在步骤b）之前执行。 在另一替代方案中，步骤d）可以与步骤c）同时或之前进行。

公开(公告)号：USD614746S1

公开(公告)日：2010-04-27

申请号：US29341795

申请日：2009-08-12

Applicant: Victor Hoernig ,  Chia Ying Lee

Designer： Victor Hoernig ,  Chia Ying Lee

公开(公告)号：US20100046151A1

公开(公告)日：2010-02-25

申请号：US12545419

申请日：2009-08-21

Applicant: Martijn BALLER ,  Meng-Hsuan SHIH ,  Chi-Chen LIN ,  Chien-Hsu HOU ,  Yen-Liang CHEN ,  Chia-Ying LEE ,  Wei-Chun CHIEN ,  Yung-Chie HUANG ,  Jia-Rong LIN ,  Ching-Hao YU

Inventor： Martijn BALLER ,  Meng-Hsuan SHIH ,  Chi-Chen LIN ,  Chien-Hsu HOU ,  Yen-Liang CHEN ,  Chia-Ying LEE ,  Wei-Chun CHIEN ,  Yung-Chie HUANG ,  Jia-Rong LIN ,  Ching-Hao YU

IPC: H05K5/00

CPC classification number: G06F1/1688 ,  G06F1/1616

Abstract: A portable electronic device includes a casing, a key, a loudspeaker, a soft insulating material, and an actuating unit. The key is disposed at the casing. The loudspeaker is embedded into the casing flatly. The soft insulating material covers the casing and the loudspeaker. The actuating unit is coupled to the key and the loudspeaker, and it actuates the loudspeaker to protrude from the casing in response to an actuation of the key.

Abstract translation: 便携式电子设备包括壳体，键，扬声器，软绝缘材料和致动单元。 钥匙设在外壳上。 扬声器平坦地嵌入到外壳中。 软绝缘材料覆盖外壳和扬声器。 致动单元耦合到钥匙和扬声器，并且响应于钥匙的致动而致动扬声器从壳体突出。

公开(公告)号：US20100029341A1

公开(公告)日：2010-02-04

申请号：US12510846

申请日：2009-07-28

Applicant: Chia-Ying LEE

Inventor： Chia-Ying LEE

IPC: H04B1/38 ,  G06F3/02

CPC classification number: G06F3/0233

Abstract: An electronic device has a function of inputting Roman letters. The electronic device includes a display unit, an input unit, and a control unit. The input unit has a plurality of operation directions associated a plurality of direction input signals. The input unit is operated towards one of the operation directions, the input unit generates one of the direction input signals corresponding to a shape character. Each group of the shape characters corresponds to at least one Roman letter. The control unit is coupled to the display unit and the input unit, respectively, and the control unit is used for receiving a group of the direction input signals generated by the input unit to obtain a group of the shape characters corresponding to the group of the direction input signals and to provide at least one Roman letter corresponding to the group of the shape characters for the display unit.

Abstract translation: 电子设备具有输入罗马字母的功能。 电子设备包括显示单元，输入单元和控制单元。 输入单元具有与多个方向输入信号相关联的多个操作方向。 输入单元朝向操作方向之一操作，输入单元产生对应于形状字符的方向输入信号之一。 每组形状字符对应至少一个罗马字母。 控制单元分别耦合到显示单元和输入单元，并且控制单元用于接收由输入单元生成的一组方向输入信号，以获得与该组的对应的一组形状字符 方向输入信号，并提供对应于显示单元的形状字符组的至少一个罗马字母。

公开(公告)号：US20080269533A1

公开(公告)日：2008-10-30

申请号：US11898725

申请日：2007-09-14

Applicant: Jen-Chun Chang ,  Jann-Chen Lin ,  Chia-Ying Lee ,  Guor-Tzo Wei ,  Jung-Chung Wu

Inventor： Jen-Chun Chang ,  Jann-Chen Lin ,  Chia-Ying Lee ,  Guor-Tzo Wei ,  Jung-Chung Wu

IPC: C07C5/03

CPC classification number: C10G45/40

Abstract: A method of selectively hydrogenating a conjugated diene by using a supported ionic liquid nano-palladium catalyst. The supported ionic liquid nano-palladium catalyst, hydrogen and a reactant having the conjugated diene react at a temperature ranging from 40 to 120° C. and a pressure ranging from 100 to 400 psig. A ratio of the catalyst to the reactant ranges from 1/20 to 1/250 (g/ml).

Abstract translation: 通过使用负载离子液体纳米钯催化剂选择性氢化共轭二烯的方法。 支持的离子液体纳米钯催化剂，氢气和具有共轭二烯的反应物在40至120℃的温度和100至400psig的压力下反应。 催化剂与反应物的比例为1/20至1/250（g / ml）。