Abstract:
The present invention provides a method of fabricating a flash memory cell without silicide formation on the source regions. A liquid deposition oxide layer is formed selectively only on a common source region by using a mask layer. The liquid deposition oxide layer is formed on the common source region in order to cover the common source region. Therefore, once a salicide step is performed, a silicide layer will not form on the common source region.
Abstract:
A structure of and a method for fabricating a highly sensitive photo sensor. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avoid the shortcoming of conventional PIN photo diode, and enhance the sensitivity of photo sensing.
Abstract:
A method and apparatus for an improved multiple channel sensor interface circuit is described which comprises a plurality of input integrator circuits (35) coupled in parallel; a switched capacitor multiplexer (37) coupled to the input integrator circuits (35); and an output integrator stage (39) coupled to the switched capacitor multiplexer (37). An additional embodiment is described wherein a multiple channel voltage sensor interface circuit comprising a plurality of switched capacitor storage elements (S26 . . . S28) is coupled to a plurality of inputs; a plurality of integrator amplifiers (51, 53) is coupled to the switched capacitor storage elements (C22 . . . C30); and timing circuitry is coupled to the switched capacitor storage elements (C221 . . . C30) and to integrator amplifiers (51, 53) operable to selectively enable sampling of the inputs.
Abstract:
A foldable cushion bag includes a main body and a handling unit. The main body includes a bottom wall and a sleeve wall jointed to the bottom wall. The bottom wall and the sleeve wall form a first heat sealed joint therebetween and cooperatively define a space for receiving a bottle. Each of the bottom and sleeve walls includes a multilayered structure having an outermost protecting layer, a first adhesive layer, a heat sealing layer, a second adhesive layer and an innermost cushion layer in that order. The handling unit is connected to the sleeve wall and opposite to the bottom wall. The handling unit is formed with a gripping hole.
Abstract:
A cleaning apparatus is provided. The cleaning apparatus includes a rod body, a cleaning portion and a positioning device. Mainly, the cleaning portion is positioned for the cleaning portion being non-rotatable relative to the rod body by the positioning device. Therefore, when a user operates the cleaning apparatus, the cleaning portion would be positioned at a rotation degree between the cleaning portion and the rod body for increasing a stability of said operating.
Abstract:
A voice control system is adapted for controlling an electrical appliance, and includes a host and a portable voice control device. The portable voice control device is capable of wireless communication with the host, and includes an audio pick-up unit for receiving a voice input. One of the host and the portable voice control device includes a voice recognition control module that is configured to recognize a control command from the voice input. The host controls operation of the electrical appliance according to the control command, and transmits an appliance status message to the portable voice control device. The portable voice control device further includes an output unit for outputting the appliance status message.
Abstract:
A pixel structure includes a first electrode on a substrate, a first insulation layer covering the first electrode, a gate located on the first insulation layer, a second electrode located on the first insulation layer above the first electrode, a second insulation layer covering the gate and the second electrode, a semiconductor layer located on the second insulation layer above the gate, a source and a drain that are located on the semiconductor layer, a third electrode, a third insulation layer, and a pixel electrode. The third electrode is located on the second insulation layer above the second electrode and electrically connected to the first electrode. The third insulation layer covers the source, the drain, and the third electrode. The pixel electrode is located on the third insulation layer and electrically connected to the drain.